DE102004011858A8 - EEPROM-Speicherzelle für hohe Temperaturen - Google Patents

EEPROM-Speicherzelle für hohe Temperaturen Download PDF

Info

Publication number
DE102004011858A8
DE102004011858A8 DE102004011858A DE102004011858A DE102004011858A8 DE 102004011858 A8 DE102004011858 A8 DE 102004011858A8 DE 102004011858 A DE102004011858 A DE 102004011858A DE 102004011858 A DE102004011858 A DE 102004011858A DE 102004011858 A8 DE102004011858 A8 DE 102004011858A8
Authority
DE
Germany
Prior art keywords
memory cell
high temperatures
eeprom memory
eeprom
temperatures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE102004011858A
Other languages
English (en)
Other versions
DE102004011858A1 (de
DE102004011858B4 (de
Inventor
Steffen Richter
Dirk Dr. Nuernbergk
Sonja Richter
Dagmar Kirsten
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Imms Institut Fuer Mikroelektronik und Mechatronik
X Fab Semiconductor Foundries GmbH
Original Assignee
IMMS INST fur MIKROELEKTRONIK
Imms Institut fur Mikroelektronik- und Mechatronik-Systeme Ggmbh (immsggmbh)
X Fab Semiconductor Foundries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IMMS INST fur MIKROELEKTRONIK, Imms Institut fur Mikroelektronik- und Mechatronik-Systeme Ggmbh (immsggmbh), X Fab Semiconductor Foundries GmbH filed Critical IMMS INST fur MIKROELEKTRONIK
Priority to DE102004011858A priority Critical patent/DE102004011858B4/de
Priority to US10/592,246 priority patent/US20070194378A1/en
Priority to PCT/EP2005/051099 priority patent/WO2005088705A1/de
Priority to EP05716998A priority patent/EP1723669A1/de
Publication of DE102004011858A1 publication Critical patent/DE102004011858A1/de
Publication of DE102004011858A8 publication Critical patent/DE102004011858A8/de
Application granted granted Critical
Publication of DE102004011858B4 publication Critical patent/DE102004011858B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
DE102004011858A 2004-03-11 2004-03-11 EEPROM-Speicherzelle und ihr Auswahltransistor Expired - Lifetime DE102004011858B4 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE102004011858A DE102004011858B4 (de) 2004-03-11 2004-03-11 EEPROM-Speicherzelle und ihr Auswahltransistor
US10/592,246 US20070194378A1 (en) 2004-03-11 2005-03-10 Eeprom memory cell for high temperatures
PCT/EP2005/051099 WO2005088705A1 (de) 2004-03-11 2005-03-10 Eeprom-speicherzelle für hohe temperaturen
EP05716998A EP1723669A1 (de) 2004-03-11 2005-03-10 Eeprom-speicherzelle für hohe temperaturen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004011858A DE102004011858B4 (de) 2004-03-11 2004-03-11 EEPROM-Speicherzelle und ihr Auswahltransistor

Publications (3)

Publication Number Publication Date
DE102004011858A1 DE102004011858A1 (de) 2005-12-01
DE102004011858A8 true DE102004011858A8 (de) 2006-03-30
DE102004011858B4 DE102004011858B4 (de) 2009-11-05

Family

ID=34961235

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102004011858A Expired - Lifetime DE102004011858B4 (de) 2004-03-11 2004-03-11 EEPROM-Speicherzelle und ihr Auswahltransistor

Country Status (4)

Country Link
US (1) US20070194378A1 (de)
EP (1) EP1723669A1 (de)
DE (1) DE102004011858B4 (de)
WO (1) WO2005088705A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7919801B2 (en) * 2007-10-26 2011-04-05 Hvvi Semiconductors, Inc. RF power transistor structure and a method of forming the same
US8133783B2 (en) * 2007-10-26 2012-03-13 Hvvi Semiconductors, Inc. Semiconductor device having different structures formed simultaneously
US8125044B2 (en) * 2007-10-26 2012-02-28 Hvvi Semiconductors, Inc. Semiconductor structure having a unidirectional and a bidirectional device and method of manufacture
US8299519B2 (en) * 2010-01-11 2012-10-30 International Business Machines Corporation Read transistor for single poly non-volatile memory using body contacted SOI device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656845A (en) * 1995-03-08 1997-08-12 Atmel Corporation EEPROM on insulator
US20010001490A1 (en) * 1998-06-08 2001-05-24 Kuo-Tung Sung Device with differential field isolation thicknesses and related methods

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3447927B2 (ja) * 1997-09-19 2003-09-16 株式会社東芝 半導体装置およびその製造方法
US6164781A (en) * 1998-11-13 2000-12-26 Alliedsignal Inc. High temperature transistor with reduced risk of electromigration and differently shaped electrodes

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656845A (en) * 1995-03-08 1997-08-12 Atmel Corporation EEPROM on insulator
US20010001490A1 (en) * 1998-06-08 2001-05-24 Kuo-Tung Sung Device with differential field isolation thicknesses and related methods

Also Published As

Publication number Publication date
WO2005088705A1 (de) 2005-09-22
DE102004011858A1 (de) 2005-12-01
DE102004011858B4 (de) 2009-11-05
EP1723669A1 (de) 2006-11-22
US20070194378A1 (en) 2007-08-23

Similar Documents

Publication Publication Date Title
DE602006006093D1 (de) Perfluorelastomerzusammensetzungen für tieftemperaturanwendungen
DE602004006488D1 (de) Brennstoffkassette für brennstoffzellen
DE112006004268A5 (de) Elektrochemische Zelle
DE602006014389D1 (de) Verkapselungsmaterial für solarzellenelement
DK2471905T3 (da) Placentastamcellepopulationer
DE602006005080D1 (de) Verbesserter lesemodus für flash-speicher
DK1864132T3 (da) Fra amnion stammende cellesammensætninger, fremgangsmåder til fremstilling deraf og anvendelser deraf
DE60303664D1 (de) Layout für thermisch ausgewählte kreuzpunkt mram zelle
DE112006000958B8 (de) Brennstoffzelle
DE502006001179D1 (de) Halteelement für Gitter
DE60302641D1 (de) Widerstandheizelemente für Brennstoffzellen
DE602004027608D1 (de) Kühlsystem für eine brennstoffzelle
DE602005012922D1 (de) Bei sehr niedrigen Temperaturen arbeitende Lithium-Sekundärbatterie
ATE493485T1 (de) Hochtemperaturkorrosionsinhibitor
DE602006004396D1 (de) EEPROM-Speicherarchitektur
DE602006013524D1 (de) Brennstoffzelle
DE502006000375D1 (de) Entgasungsventil für Säurebatterien
DE602006006694D1 (de) Remanente flüchtige speicherzelle
DE602006019190D1 (de) Schiebemodul für tragbares Endgerät
DE602006020338D1 (de) Brennstoffzelle
DE602006001060D1 (de) Brennstoffzelle
AT501212A3 (de) Thermostataufsatz für ein heizungs- oder kälteventil
DE602006016532D1 (de) Brennstoffzelle
DE602007005912D1 (de) Lithium-Akkumulator für Niedrigtemperaturbetrieb
DE102004011858A8 (de) EEPROM-Speicherzelle für hohe Temperaturen

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: IMMS INSTITUT FUER MIKROELEKTRONIK- UND MECHATRONIK

Owner name: X-FAB SEMICONDUCTOR FOUNDRIES AG, 99097 ERFURT, DE

OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0027115000

Ipc: H10B0069000000

R082 Change of representative

Representative=s name: LEONHARD, REIMUND, DIPL.-ING., DE

R071 Expiry of right