DE10196646T1 - Riesenmagnetowiderstand- bzw. GMR-Sensor mit selbstkonsistenten Entmagnetisierungsfeldern - Google Patents
Riesenmagnetowiderstand- bzw. GMR-Sensor mit selbstkonsistenten EntmagnetisierungsfeldernInfo
- Publication number
- DE10196646T1 DE10196646T1 DE10196646T DE10196646T DE10196646T1 DE 10196646 T1 DE10196646 T1 DE 10196646T1 DE 10196646 T DE10196646 T DE 10196646T DE 10196646 T DE10196646 T DE 10196646T DE 10196646 T1 DE10196646 T1 DE 10196646T1
- Authority
- DE
- Germany
- Prior art keywords
- consistent
- self
- giant magnetoresistance
- gmr sensor
- demagnetization fields
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B2005/0002—Special dispositions or recording techniques
- G11B2005/0005—Arrangements, methods or circuits
- G11B2005/0008—Magnetic conditionning of heads, e.g. biasing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23381500P | 2000-09-19 | 2000-09-19 | |
PCT/US2001/013417 WO2002025642A1 (en) | 2000-09-19 | 2001-04-26 | Giant magnetoresistive sensor having self-consistent demagnetization fields |
Publications (1)
Publication Number | Publication Date |
---|---|
DE10196646T1 true DE10196646T1 (de) | 2003-08-21 |
Family
ID=22878799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10196646T Withdrawn DE10196646T1 (de) | 2000-09-19 | 2001-04-26 | Riesenmagnetowiderstand- bzw. GMR-Sensor mit selbstkonsistenten Entmagnetisierungsfeldern |
Country Status (7)
Country | Link |
---|---|
US (1) | US6914759B2 (de) |
JP (1) | JP4074192B2 (de) |
CN (1) | CN1459094A (de) |
AU (1) | AU2001255695A1 (de) |
DE (1) | DE10196646T1 (de) |
GB (1) | GB2382452A (de) |
WO (1) | WO2002025642A1 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7035062B1 (en) | 2001-11-29 | 2006-04-25 | Seagate Technology Llc | Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments |
US7271986B2 (en) | 2002-05-15 | 2007-09-18 | Seagate Technology Llc | V-shape magnetic field sensor with anisotropy induced orthogonal magnetic alignment |
US7183893B2 (en) * | 2004-02-04 | 2007-02-27 | Seagate Technology Llc | TMR sensor with oxidized alloy barrier layer and method for forming the same |
US7477490B2 (en) * | 2004-06-30 | 2009-01-13 | Seagate Technology Llc | Single sensor element that is naturally differentiated |
US7345854B2 (en) * | 2004-07-13 | 2008-03-18 | Headway Technologies, Inc. | GMR sensor having a reference layer with movable magnetization |
US7369374B2 (en) * | 2005-04-18 | 2008-05-06 | Hitachi Global Storage Technologies Netherlands B.V. | Current in plane magnetoresistive sensor having a contiguous hard bias layer located at back edge of stripe height |
EP1731916A1 (de) * | 2005-06-07 | 2006-12-13 | IEE INTERNATIONAL ELECTRONICS & ENGINEERING S.A. | Magnetfeldsensor |
JP4466487B2 (ja) * | 2005-06-27 | 2010-05-26 | Tdk株式会社 | 磁気センサおよび電流センサ |
JP2007323725A (ja) * | 2006-05-31 | 2007-12-13 | Toshiba Corp | 垂直通電型磁気ヘッドおよびそれを用いた磁気ディスク装置 |
US7869165B2 (en) * | 2007-07-30 | 2011-01-11 | Tdk Corporation | Magnetic field detecting element having stack with a plurality of free layers and side shield layers |
US8085512B2 (en) * | 2007-08-30 | 2011-12-27 | Tdk Corporation | CPP-type magnetoresistance effect element having a pair of free layers |
US20090061258A1 (en) * | 2007-08-30 | 2009-03-05 | Tomohito Mizuno | Cpp-type magnetoresistance effect element having characteristic free layers |
US7826179B2 (en) * | 2007-09-17 | 2010-11-02 | Tdk Corporation | Magneto-resistive effect device of the CPP structure and magnetic disk system |
US7843668B2 (en) * | 2007-12-27 | 2010-11-30 | Tdk Corporation | Magnetoresistive element including two ferromagnetic layers |
US20090213502A1 (en) * | 2008-02-25 | 2009-08-27 | Daisuke Miyauchi | Magneto-resistance effect element having stack with dual free layer and a plurality of bias magnetic layers |
US8238062B2 (en) * | 2009-06-25 | 2012-08-07 | Seagate Technology Llc | Magnetoresistive reader with demagnetization flux guide |
KR101616046B1 (ko) * | 2009-10-05 | 2016-04-27 | 삼성전자주식회사 | 발진기 및 그 동작방법 |
US20120064563A1 (en) * | 2010-08-12 | 2012-03-15 | Mahdavi Alborz | Cell-based sensing systems and methods |
US8531802B2 (en) * | 2010-12-17 | 2013-09-10 | Seagate Technology Llc | Magnetic structure free layer stabilization |
US8390963B2 (en) | 2011-04-25 | 2013-03-05 | Seagate Technology Llc | Trilayer reader with current constraint at the ABS |
US8755154B2 (en) * | 2011-09-13 | 2014-06-17 | Seagate Technology Llc | Tuned angled uniaxial anisotropy in trilayer magnetic sensors |
US8749924B2 (en) | 2011-09-13 | 2014-06-10 | Seagate Technology Llc | Tuned shunt ratio for magnetic sensors |
US8907666B2 (en) | 2011-09-30 | 2014-12-09 | HGST Netherlands B.V. | Magnetic bias structure for magnetoresistive sensor having a scissor structure |
US8837092B2 (en) | 2012-06-29 | 2014-09-16 | Seagate Technology Llc | Magnetic element with biasing structure distal the air bearing surface |
US8780508B2 (en) | 2012-06-29 | 2014-07-15 | Seagate Technology Llc | Magnetic element with biased side shield lamination |
US9142232B2 (en) * | 2012-08-22 | 2015-09-22 | Seagate Technology Llc | Magnetic stack with separated contacts |
US8854773B2 (en) * | 2012-11-28 | 2014-10-07 | Seagate Technology Llc | Side shield biasing layer separated from an air bearing surface |
US9007725B1 (en) | 2014-10-07 | 2015-04-14 | Western Digital (Fremont), Llc | Sensor with positive coupling between dual ferromagnetic free layer laminates |
US9449621B1 (en) | 2015-03-26 | 2016-09-20 | Western Digital (Fremont), Llc | Dual free layer magnetic reader having a rear bias structure having a high aspect ratio |
JP2021036199A (ja) * | 2017-10-06 | 2021-03-04 | 株式会社村田製作所 | 磁気センサ及び電流センサ |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3820475C1 (de) | 1988-06-16 | 1989-12-21 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
JP3483895B2 (ja) | 1990-11-01 | 2004-01-06 | 株式会社東芝 | 磁気抵抗効果膜 |
US5206590A (en) | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5549978A (en) | 1992-10-30 | 1996-08-27 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
US5301079A (en) * | 1992-11-17 | 1994-04-05 | International Business Machines Corporation | Current biased magnetoresistive spin valve sensor |
KR100225179B1 (ko) | 1992-11-30 | 1999-10-15 | 니시무로 타이죠 | 박막 자기 헤드 및 자기 저항 효과형 헤드 |
DE4243358A1 (de) | 1992-12-21 | 1994-06-23 | Siemens Ag | Magnetowiderstands-Sensor mit künstlichem Antiferromagneten und Verfahren zu seiner Herstellung |
US5475304A (en) | 1993-10-01 | 1995-12-12 | The United States Of America As Represented By The Secretary Of The Navy | Magnetoresistive linear displacement sensor, angular displacement sensor, and variable resistor using a moving domain wall |
US5452163A (en) | 1993-12-23 | 1995-09-19 | International Business Machines Corporation | Multilayer magnetoresistive sensor |
US5712751A (en) * | 1994-03-17 | 1998-01-27 | Kabushiki Kaisha Toshiba | Magnetic sensor and magnetic recording-reproducing head and magnetic recording-reproducing apparatus using same |
JPH07272221A (ja) * | 1994-03-31 | 1995-10-20 | Yamaha Corp | 磁気抵抗効果型薄膜ヘッド |
US5583725A (en) | 1994-06-15 | 1996-12-10 | International Business Machines Corporation | Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor |
US5898546A (en) * | 1994-09-08 | 1999-04-27 | Fujitsu Limited | Magnetoresistive head and magnetic recording apparatus |
US5756191A (en) | 1994-09-13 | 1998-05-26 | Kabushiki Kaisha Toshiba | Exchange coupling film and magnetoresistance effect element |
EP0702357B1 (de) | 1994-09-16 | 2003-06-18 | Kabushiki Kaisha Toshiba | Magnetowiderstandeffektkopf und Magnetaufzeichnungs-/Wiedergabekopf daraus |
US5650887A (en) | 1996-02-26 | 1997-07-22 | International Business Machines Corporation | System for resetting sensor magnetization in a spin valve magnetoresistive sensor |
US6055135A (en) * | 1996-03-25 | 2000-04-25 | Alps Electric Co., Ltd. | Exchange coupling thin film and magnetoresistive element comprising the same |
US5764056A (en) | 1996-05-16 | 1998-06-09 | Seagate Technology, Inc. | Nickel-manganese as a pinning layer in spin valve/GMR magnetic sensors |
US5742162A (en) | 1996-07-17 | 1998-04-21 | Read-Rite Corporation | Magnetoresistive spin valve sensor with multilayered keeper |
US5696655A (en) | 1996-07-30 | 1997-12-09 | Nec Research Institute, Inc. | Self-biasing non-magnetic giant magnetoresistance |
US5705973A (en) | 1996-08-26 | 1998-01-06 | Read-Rite Corporation | Bias-free symmetric dual spin valve giant magnetoresistance transducer |
US5696656A (en) | 1996-09-06 | 1997-12-09 | International Business Machines Corporation | Highly sensitive orthogonal spin valve read head |
US5739988A (en) * | 1996-09-18 | 1998-04-14 | International Business Machines Corporation | Spin valve sensor with enhanced magnetoresistance |
US5748524A (en) | 1996-09-23 | 1998-05-05 | Motorola, Inc. | MRAM with pinned ends |
US5751521A (en) | 1996-09-23 | 1998-05-12 | International Business Machines Corporation | Differential spin valve sensor structure |
US5717550A (en) | 1996-11-01 | 1998-02-10 | Read-Rite Corporation | Antiferromagnetic exchange biasing using buffer layer |
US5739990A (en) * | 1996-11-13 | 1998-04-14 | Read-Rite Corporation | Spin-valve GMR sensor with inbound exchange stabilization |
JPH10162320A (ja) * | 1996-11-26 | 1998-06-19 | Nec Corp | 磁気抵抗効果型ヘッドおよびその使用方法 |
US5768069A (en) * | 1996-11-27 | 1998-06-16 | International Business Machines Corporation | Self-biased dual spin valve sensor |
JPH10320717A (ja) | 1997-05-15 | 1998-12-04 | Hitachi Ltd | 磁気センサ |
JPH1125430A (ja) | 1997-07-07 | 1999-01-29 | Yamaha Corp | スピンバルブ型磁気抵抗効果ヘッド |
US6169647B1 (en) * | 1998-06-11 | 2001-01-02 | Seagate Technology Llc | Giant magnetoresistive sensor having weakly pinned ferromagnetic layer |
US6449134B1 (en) * | 1999-08-05 | 2002-09-10 | International Business Machines Corporation | Read head with file resettable dual spin valve sensor |
JP5254514B2 (ja) * | 1999-09-10 | 2013-08-07 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 減少した電磁切換え磁場を持つ磁気抵抗検知器又は記憶素子 |
JP3623418B2 (ja) * | 1999-12-06 | 2005-02-23 | アルプス電気株式会社 | スピンバルブ型磁気抵抗効果素子及びそれを備えた薄膜磁気へッドとそれらの製造方法 |
-
2001
- 2001-04-26 JP JP2002529762A patent/JP4074192B2/ja not_active Expired - Fee Related
- 2001-04-26 DE DE10196646T patent/DE10196646T1/de not_active Withdrawn
- 2001-04-26 AU AU2001255695A patent/AU2001255695A1/en not_active Abandoned
- 2001-04-26 GB GB0305441A patent/GB2382452A/en not_active Withdrawn
- 2001-04-26 CN CN01815809A patent/CN1459094A/zh active Pending
- 2001-04-26 US US09/843,370 patent/US6914759B2/en not_active Expired - Fee Related
- 2001-04-26 WO PCT/US2001/013417 patent/WO2002025642A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN1459094A (zh) | 2003-11-26 |
GB0305441D0 (en) | 2003-04-16 |
AU2001255695A1 (en) | 2002-04-02 |
US20020034056A1 (en) | 2002-03-21 |
JP4074192B2 (ja) | 2008-04-09 |
US6914759B2 (en) | 2005-07-05 |
WO2002025642A1 (en) | 2002-03-28 |
GB2382452A (en) | 2003-05-28 |
JP2004510326A (ja) | 2004-04-02 |
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Legal Events
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OP8 | Request for examination as to paragraph 44 patent law |
Ref document number: 10196646 Country of ref document: DE Date of ref document: 20030821 Kind code of ref document: P |
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8139 | Disposal/non-payment of the annual fee |