DE10195267T1 - Photoelektrischer Wandler mit Hybrid-Dünnschichtstruktur und dafür verwendeter transparenter laminierter Körper - Google Patents

Photoelektrischer Wandler mit Hybrid-Dünnschichtstruktur und dafür verwendeter transparenter laminierter Körper

Info

Publication number
DE10195267T1
DE10195267T1 DE10195267T DE10195267T DE10195267T1 DE 10195267 T1 DE10195267 T1 DE 10195267T1 DE 10195267 T DE10195267 T DE 10195267T DE 10195267 T DE10195267 T DE 10195267T DE 10195267 T1 DE10195267 T1 DE 10195267T1
Authority
DE
Germany
Prior art keywords
laminated body
film structure
photoelectric converter
body used
transparent laminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10195267T
Other languages
English (en)
Inventor
Yuko Tawada
Kenji Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaneka Corp
Original Assignee
Kaneka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaneka Corp filed Critical Kaneka Corp
Publication of DE10195267T1 publication Critical patent/DE10195267T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
DE10195267T 2000-02-04 2001-01-29 Photoelektrischer Wandler mit Hybrid-Dünnschichtstruktur und dafür verwendeter transparenter laminierter Körper Withdrawn DE10195267T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000027840A JP2001217440A (ja) 2000-02-04 2000-02-04 ハイブリッド型薄膜光電変換装置とそれに用いられる透光性積層体
PCT/JP2001/000586 WO2001057933A1 (fr) 2000-02-04 2001-01-29 Transducteur photoelectrique a couche mince hybride, et lamine transparent destine audit transducteur

Publications (1)

Publication Number Publication Date
DE10195267T1 true DE10195267T1 (de) 2002-12-19

Family

ID=18553355

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10195267T Withdrawn DE10195267T1 (de) 2000-02-04 2001-01-29 Photoelektrischer Wandler mit Hybrid-Dünnschichtstruktur und dafür verwendeter transparenter laminierter Körper

Country Status (4)

Country Link
US (1) US6759645B2 (de)
JP (1) JP2001217440A (de)
DE (1) DE10195267T1 (de)
WO (1) WO2001057933A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002237610A (ja) * 2001-02-08 2002-08-23 Nippon Sheet Glass Co Ltd 光電変換装置およびその製造方法
US9314235B2 (en) * 2003-02-05 2016-04-19 Smith & Nephew, Inc. Tissue anchor and insertion tool
JP4811945B2 (ja) * 2004-11-29 2011-11-09 株式会社カネカ 薄膜光電変換装置
CA2656278C (en) * 2006-06-30 2016-02-09 Biomimetic Therapeutics, Inc. Compositions and methods for treating rotator cuff injuries
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
DE102007024986A1 (de) * 2007-05-28 2008-12-04 Forschungszentrum Jülich GmbH Temperaturstabile TCO-Schicht, Verfahren zur Herstellung und Anwendung
US20090130827A1 (en) * 2007-11-02 2009-05-21 Soo Young Choi Intrinsic amorphous silicon layer
KR20100095426A (ko) * 2007-11-02 2010-08-30 어플라이드 머티어리얼스, 인코포레이티드 증착 공정들 간의 플라즈마 처리
WO2010072862A1 (es) * 2008-12-22 2010-07-01 Universidad De Barcelona Células solares de película delgada con texturas combinadas
JP2012522403A (ja) * 2009-05-06 2012-09-20 シンシリコン・コーポレーション 光起電力電池、及び、半導体層スタックにおいて光補足を高める方法
JP5143289B2 (ja) * 2009-11-05 2013-02-13 三菱電機株式会社 光起電力装置およびその製造方法
DE102010006681A1 (de) * 2010-02-03 2011-08-04 Sunfilm AG, 01900 Photovoltaikzelle, Photovoltaikmodul, Verfahren zum Herstellen einer Photovoltaikzelle und eines Photovoltaikmoduls
EP2413373A1 (de) * 2010-07-29 2012-02-01 Ecole Polytechnique Fédérale de Lausanne (EPFL) Photoelektrische Vorrichtung mit mehreren Verbindungselementen und Herstellungsverfahren dafür
US20120152346A1 (en) * 2010-12-20 2012-06-21 Qualcomm Mems Technologies, Inc. Light absorption-enhancing substrate stacks
US9716207B2 (en) 2013-07-23 2017-07-25 Globalfoundries Inc. Low reflection electrode for photovoltaic devices

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0644638B2 (ja) * 1982-12-29 1994-06-08 圭弘 濱川 異質単位セル同士のスタック形光起電力素子
US4496788A (en) * 1982-12-29 1985-01-29 Osaka Transformer Co., Ltd. Photovoltaic device
JPS60101979A (ja) * 1983-11-07 1985-06-06 Daihen Corp 光起電力素子
JP2853125B2 (ja) * 1988-03-17 1999-02-03 日本板硝子株式会社 透明導電膜の製造方法
JPH0319374A (ja) * 1989-06-16 1991-01-28 Canon Inc 光起電力素子
JP3156795B2 (ja) * 1991-03-26 2001-04-16 ティーディーケイ株式会社 光電変換素子用透明導電膜の製造方法
JPH08204217A (ja) * 1995-01-26 1996-08-09 Mitsui Toatsu Chem Inc 太陽電池モジュールの製造法
JPH09129903A (ja) 1995-10-30 1997-05-16 Kanegafuchi Chem Ind Co Ltd 集積化薄膜タンデム太陽電池とその製造方法
JPH09139515A (ja) 1995-11-15 1997-05-27 Sharp Corp 透明導電膜電極
JP3679561B2 (ja) * 1996-09-19 2005-08-03 キヤノン株式会社 光電変換素子
US6177711B1 (en) * 1996-09-19 2001-01-23 Canon Kabushiki Kaisha Photoelectric conversion element
JP3436858B2 (ja) * 1997-02-27 2003-08-18 シャープ株式会社 薄膜太陽電池の製造方法
JPH10283847A (ja) 1997-04-01 1998-10-23 Sharp Corp 透明導電膜
EP1041646B1 (de) 1997-11-10 2012-12-12 Kaneka Corporation Herstellungsverfahren eines photoelektrischen silizium-dünnschicht-wandlers
JP2000252500A (ja) * 1999-02-26 2000-09-14 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置

Also Published As

Publication number Publication date
US6759645B2 (en) 2004-07-06
US20030010900A1 (en) 2003-01-16
JP2001217440A (ja) 2001-08-10
WO2001057933A1 (fr) 2001-08-09

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8139 Disposal/non-payment of the annual fee