DE1014670B - Geraet zur Erfassung von Neutronen mit einem Halbleiter - Google Patents
Geraet zur Erfassung von Neutronen mit einem HalbleiterInfo
- Publication number
- DE1014670B DE1014670B DES43086A DES0043086A DE1014670B DE 1014670 B DE1014670 B DE 1014670B DE S43086 A DES43086 A DE S43086A DE S0043086 A DES0043086 A DE S0043086A DE 1014670 B DE1014670 B DE 1014670B
- Authority
- DE
- Germany
- Prior art keywords
- neutrons
- semiconductor body
- detection
- caused
- electrical properties
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000001514 detection method Methods 0.000 title claims description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- 239000002245 particle Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 20
- 230000004907 flux Effects 0.000 claims description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 18
- 229910052796 boron Inorganic materials 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 15
- 230000008859 change Effects 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 8
- 230000001960 triggered effect Effects 0.000 claims description 7
- 230000002427 irreversible effect Effects 0.000 claims description 5
- 230000002269 spontaneous effect Effects 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 230000002441 reversible effect Effects 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 230000033228 biological regulation Effects 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 230000005355 Hall effect Effects 0.000 claims 1
- 230000005518 electrochemistry Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 43
- 239000013078 crystal Substances 0.000 description 20
- 230000008901 benefit Effects 0.000 description 9
- 150000001639 boron compounds Chemical class 0.000 description 8
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 230000004992 fission Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910017464 nitrogen compound Inorganic materials 0.000 description 3
- 150000002830 nitrogen compounds Chemical class 0.000 description 3
- 239000012188 paraffin wax Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- LBDSXVIYZYSRII-IGMARMGPSA-N alpha-particle Chemical compound [4He+2] LBDSXVIYZYSRII-IGMARMGPSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000002285 radioactive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 210000002700 urine Anatomy 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- WZECUPJJEIXUKY-UHFFFAOYSA-N [O-2].[O-2].[O-2].[U+6] Chemical compound [O-2].[O-2].[O-2].[U+6] WZECUPJJEIXUKY-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011005 laboratory method Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 1
- 229910000439 uranium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Measurement Of Radiation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES43086A DE1014670B (de) | 1955-03-18 | 1955-03-18 | Geraet zur Erfassung von Neutronen mit einem Halbleiter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES43086A DE1014670B (de) | 1955-03-18 | 1955-03-18 | Geraet zur Erfassung von Neutronen mit einem Halbleiter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1014670B true DE1014670B (de) | 1957-08-29 |
| DE1014670C2 DE1014670C2 (enrdf_load_stackoverflow) | 1958-02-06 |
Family
ID=7484591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES43086A Granted DE1014670B (de) | 1955-03-18 | 1955-03-18 | Geraet zur Erfassung von Neutronen mit einem Halbleiter |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1014670B (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1202909B (de) | 1956-04-05 | 1965-10-14 | Licentia Gmbh | Zum quantitativen und qualitativen Nachweis von Neutronenstrahlen dienender Halbleiterkoerper und Verfahren zu seiner Herstellung |
| DE1232275B (de) * | 1962-02-02 | 1967-01-12 | Ass Elect Ind | Halbleiter-Strahlungsdetektor aus einer A -B-Verbindung fuer die Gamma-Spektroskopie |
| DE1289585B (de) * | 1964-02-27 | 1969-02-20 | Boeing Co | Vorrichtung zum integrierenden Messen von Neutronenfluessen mit einem Halbleiter-Detektorelement |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2608661A (en) * | 1945-10-16 | 1952-08-26 | Walter H Zinn | Means for measuring radiation |
-
1955
- 1955-03-18 DE DES43086A patent/DE1014670B/de active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2608661A (en) * | 1945-10-16 | 1952-08-26 | Walter H Zinn | Means for measuring radiation |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1202909B (de) | 1956-04-05 | 1965-10-14 | Licentia Gmbh | Zum quantitativen und qualitativen Nachweis von Neutronenstrahlen dienender Halbleiterkoerper und Verfahren zu seiner Herstellung |
| DE1232275B (de) * | 1962-02-02 | 1967-01-12 | Ass Elect Ind | Halbleiter-Strahlungsdetektor aus einer A -B-Verbindung fuer die Gamma-Spektroskopie |
| DE1289585B (de) * | 1964-02-27 | 1969-02-20 | Boeing Co | Vorrichtung zum integrierenden Messen von Neutronenfluessen mit einem Halbleiter-Detektorelement |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1014670C2 (enrdf_load_stackoverflow) | 1958-02-06 |
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