DE10132709A1 - Verfahren und Vorrichtung zur insbesondere kurzzeitigen thermischen Behandlung von insbesondere flachen Gegenständen - Google Patents
Verfahren und Vorrichtung zur insbesondere kurzzeitigen thermischen Behandlung von insbesondere flachen GegenständenInfo
- Publication number
- DE10132709A1 DE10132709A1 DE10132709A DE10132709A DE10132709A1 DE 10132709 A1 DE10132709 A1 DE 10132709A1 DE 10132709 A DE10132709 A DE 10132709A DE 10132709 A DE10132709 A DE 10132709A DE 10132709 A1 DE10132709 A1 DE 10132709A1
- Authority
- DE
- Germany
- Prior art keywords
- heat
- substrate
- gas
- heat exchange
- sides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 24
- 230000005855 radiation Effects 0.000 title claims abstract description 17
- 238000007669 thermal treatment Methods 0.000 title claims abstract description 7
- 238000012544 monitoring process Methods 0.000 title 1
- 239000007789 gas Substances 0.000 claims abstract description 52
- 239000000203 mixture Substances 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 230000017525 heat dissipation Effects 0.000 claims description 5
- 238000005496 tempering Methods 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 description 13
- 238000001816 cooling Methods 0.000 description 10
- 238000005259 measurement Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- IHQKEDIOMGYHEB-UHFFFAOYSA-M sodium dimethylarsinate Chemical class [Na+].C[As](C)([O-])=O IHQKEDIOMGYHEB-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/10—Mixing gases with gases
- B01F23/19—Mixing systems, i.e. flow charts or diagrams; Arrangements, e.g. comprising controlling means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/20—Measuring; Control or regulation
- B01F35/21—Measuring
- B01F35/211—Measuring of the operational parameters
- B01F35/2111—Flow rate
- B01F35/21111—Mass flow rate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/20—Measuring; Control or regulation
- B01F35/22—Control or regulation
- B01F35/221—Control or regulation of operational parameters, e.g. level of material in the mixer, temperature or pressure
- B01F35/2211—Amount of delivered fluid during a period
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F13/02—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by influencing fluid boundary
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/90—Heating or cooling systems
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Fluid Mechanics (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10132709A DE10132709A1 (de) | 2001-06-08 | 2001-07-05 | Verfahren und Vorrichtung zur insbesondere kurzzeitigen thermischen Behandlung von insbesondere flachen Gegenständen |
| PCT/EP2002/005767 WO2002101806A1 (de) | 2001-06-08 | 2002-05-25 | Verfahren und vorrichtung zur kurzzeitigen thermischen behandlung von flachen g egenständen |
| EP02730281A EP1393360A1 (de) | 2001-06-08 | 2002-05-25 | Verfahren und vorrichtung zur kurzzeitigen thermischen behandlung von flachen gegenständen |
| JP2003504452A JP2004536272A (ja) | 2001-06-08 | 2002-05-25 | 扁平物体の短時間熱処理方法と装置 |
| KR10-2003-7015410A KR20040007609A (ko) | 2001-06-08 | 2002-05-25 | 평판상 대상물의 단기열처리방법과 장치 |
| US10/725,914 US20040168639A1 (en) | 2001-06-08 | 2003-12-01 | Method and device for short-term thermal-treatment of flat objects |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10128190 | 2001-06-08 | ||
| DE10132709A DE10132709A1 (de) | 2001-06-08 | 2001-07-05 | Verfahren und Vorrichtung zur insbesondere kurzzeitigen thermischen Behandlung von insbesondere flachen Gegenständen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE10132709A1 true DE10132709A1 (de) | 2002-12-12 |
Family
ID=7687853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10132709A Withdrawn DE10132709A1 (de) | 2001-06-08 | 2001-07-05 | Verfahren und Vorrichtung zur insbesondere kurzzeitigen thermischen Behandlung von insbesondere flachen Gegenständen |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20040007609A (ko) |
| DE (1) | DE10132709A1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004044962A1 (en) * | 2002-11-05 | 2004-05-27 | Wafermasters, Inc. | Forced convection assisted rapid thermal furnace |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100909473B1 (ko) * | 2007-10-11 | 2009-07-28 | 세메스 주식회사 | 기판 처리 장치 |
-
2001
- 2001-07-05 DE DE10132709A patent/DE10132709A1/de not_active Withdrawn
-
2002
- 2002-05-25 KR KR10-2003-7015410A patent/KR20040007609A/ko not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004044962A1 (en) * | 2002-11-05 | 2004-05-27 | Wafermasters, Inc. | Forced convection assisted rapid thermal furnace |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040007609A (ko) | 2004-01-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: H01L 21/324 AFI20051017BHDE |
|
| 8127 | New person/name/address of the applicant |
Owner name: AIXTRON AG, 52134 HERZOGENRATH, DE |
|
| R082 | Change of representative |
Representative=s name: RIEDER & PARTNER PATENTANWAELTE - RECHTSANWALT, 42 Representative=s name: RIEDER & PARTNER PATENTANWAELTE - RECHTSANWALT, DE |
|
| R081 | Change of applicant/patentee |
Owner name: AIXTRON SE, DE Free format text: FORMER OWNER: AIXTRON AG, 52134 HERZOGENRATH, DE Effective date: 20111104 |
|
| R082 | Change of representative |
Representative=s name: RIEDER & PARTNER MBB PATENTANWAELTE - RECHTSAN, DE Effective date: 20111104 Representative=s name: RIEDER & PARTNER PATENTANWAELTE - RECHTSANWALT, DE Effective date: 20111104 |
|
| R016 | Response to examination communication | ||
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee | ||
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20150203 |