DE10081173T1 - Verfahren und Vorrichtung zum Isolieren einer Hochleistungs-Radiofrequenzelektrode durch die Plasmaentladegase in eine Prozesskammer eingespritzt werden - Google Patents

Verfahren und Vorrichtung zum Isolieren einer Hochleistungs-Radiofrequenzelektrode durch die Plasmaentladegase in eine Prozesskammer eingespritzt werden

Info

Publication number
DE10081173T1
DE10081173T1 DE10081173T DE10081173T DE10081173T1 DE 10081173 T1 DE10081173 T1 DE 10081173T1 DE 10081173 T DE10081173 T DE 10081173T DE 10081173 T DE10081173 T DE 10081173T DE 10081173 T1 DE10081173 T1 DE 10081173T1
Authority
DE
Germany
Prior art keywords
isolating
injected
radio frequency
process chamber
plasma discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10081173T
Other languages
English (en)
Inventor
Stephen N Golovato
Paul Louis Consoli
Robert W Milgate
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of DE10081173T1 publication Critical patent/DE10081173T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
DE10081173T 1999-03-31 2000-03-16 Verfahren und Vorrichtung zum Isolieren einer Hochleistungs-Radiofrequenzelektrode durch die Plasmaentladegase in eine Prozesskammer eingespritzt werden Withdrawn DE10081173T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/282,534 US6173673B1 (en) 1999-03-31 1999-03-31 Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber
PCT/US2000/007031 WO2000059005A1 (en) 1999-03-31 2000-03-16 Method and apparatus for insulating a high power rf electrode through which plasma discharge gases are injected into a processing chamber

Publications (1)

Publication Number Publication Date
DE10081173T1 true DE10081173T1 (de) 2001-06-13

Family

ID=23081961

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10081173T Withdrawn DE10081173T1 (de) 1999-03-31 2000-03-16 Verfahren und Vorrichtung zum Isolieren einer Hochleistungs-Radiofrequenzelektrode durch die Plasmaentladegase in eine Prozesskammer eingespritzt werden

Country Status (7)

Country Link
US (1) US6173673B1 (de)
JP (1) JP3884620B2 (de)
KR (1) KR100440658B1 (de)
DE (1) DE10081173T1 (de)
GB (1) GB2356082B (de)
TW (1) TW466627B (de)
WO (1) WO2000059005A1 (de)

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Also Published As

Publication number Publication date
JP2002540622A (ja) 2002-11-26
GB0030075D0 (en) 2001-01-24
JP3884620B2 (ja) 2007-02-21
TW466627B (en) 2001-12-01
KR20010043913A (ko) 2001-05-25
WO2000059005A1 (en) 2000-10-05
US6173673B1 (en) 2001-01-16
GB2356082B (en) 2003-12-31
KR100440658B1 (ko) 2004-07-19
GB2356082A (en) 2001-05-09

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8110 Request for examination paragraph 44
8139 Disposal/non-payment of the annual fee