CS248345B1 - Power semiconductor device - Google Patents

Abstract

The purpose of the solution is to eliminate expansions in a power semiconductor component resulting from different coefficients of linear thermal expansion of the semiconductor silicon structure and the tungsten or molybdenum expansion electrode. The stated purpose is achieved by replacing the tungsten or molybdenum expansion electrode with an expansion electrode made of a semiconductor material with a conductivity close to that of a metal, which is connected to the semiconductor silicon structure by a soft or hard connection. This assembly is provided with metal contacts and slidably inserted between the main electrodes of the semiconductor component housing.

Description

The present invention relates to a power semiconductor component for high current overloads.

The construction of power semiconductor devices has been solved by soft or hard connection of semiconductor silicon structure with molybdenum or tungsten diode electrode »

The disadvantage of this construction »resulting from the different coefficients of linear thermal expansion of silicon and molybdenum or tungsten» is the formation of dilatations. Dilatations lead to system deflection, silicon wafer contraction, and cause various types of failure and reduced yield.

The above disadvantages are overcome by a power semiconductor component according to the invention, consisting of a semiconductor silicon structure firmly connected by a conductive joint to the dilatation electrodes, wherein the semiconductor silicon structure is connected at least on one side by a hard or soft joint to the diode electrode. The assembly of the semiconductor silicon structure and the diode electrode of semiconductor material is provided on the outer surfaces with metal contacts and is slidably mounted between the main electrodes of the housing of the semiconductor component. Between the metal contacts and the main electrodes there may be a metal intermediate2 on at least one side

248 345 layer, eg * molybdenum or tungsten, possibly another soft metal interlayer, profiled on at least one surface *

The advantage of the power semiconductor component according to the invention is the elimination of dilatations caused by different coefficients of thermal expansion, the semiconductor system does not contract, does not bend and common lithography methods for contact formation can be applied after connecting the diode electrode of semiconductor material.

Manufacturing large-diameter silicon wafer power semiconductor devices is more cost-effective than existing components *

In the attached drawing, FIG. 1 shows a semiconductor silicon structure of a power semiconductor component according to the invention with inserted metal interlayers in cross-section and FIG. 2 shows a semiconductor silicon structure with another profiled soft metal interlayer.

Example

In Fig. 1, a thyristor structure 1 having a diameter of 25 mm is connected by a hard alloy joint 2 to a pad-shaped expansion electrode 6 made of high-boron doped silicon. This assembly is provided with aluminum contacts 4 and 6 and slidably interposed between the main electrodes 6 The housing of the semiconductor device. Between the main electrodes 6 and 6 of the semiconductor component housing and the aluminum contacts 4 and f there are interlayers 8 and 6 made of 0.2 mm thick molybdenum sheet.

Fig. 2 shows a 25 mm diameter semiconductor diode structure 12. connected by a rigid joint 2 on both sides with dilatation electrodes 10 and 11 * made of boron-doped silicon, provided with aluminum contacts 4 ^and 5 which are separated by 0.2 mm interlayers 8 and 6 of molybdenum sheet thickness from the main electrodes 6 and 8 of the housing a semiconductor device between which the entire assembly is inserted * Between the intermediate layer 2 ^{and the} main electrode χ of the semiconductor device housing there is an intermediate layer 13 * made of one profile profiled silver foil with a profile height of 200 µm *

By replacing the molybdenum or tungsten diode with the diode 2 ^{of the} highly doped silicon, the dilatation caused by the different coefficients of thermal expansion of silicon and tungsten or molybdenum is removed.

248 345 melts at large diameters of semiconductor structures. Another layer 13 of profiled silver foil serves to eliminate the unevenness of the main electrodes 6 and J of the semiconductor component.

Claims (3)

1. A power semiconductor component consisting of a semiconductor, silicon structure firmly connected by a conductive connection to dilatation electrodes, characterized in that the semiconductor silicon structure (1) is connected at least on one side by a hard or soft joint to the diode electrode (3) of semiconductor material with conductivity near the conductivity of the metals, wherein the diode electrode assembly (3) of semiconductor material and semiconductor silicon structure (1) is provided on the outer surfaces with metal contacts (4) and (5) and is slidably mounted between the main electrodes (6) and (7) of the housing semiconductor devices. Power semiconductor device according to claim 1, characterized in that a metal intermediate layer (8) is arranged between at least one side of the metal contacts (4) and (5) and the main electrodes (6) and (7) of the semiconductor device housing. (9), for example tungsten or molybdenum. Power semiconductor device according to Claims 1 and 2 _P, characterized in that it is loose between the metal contacts (4) and (5) and the main electrodes (6) and (1) of the semiconductor element housing or the metal interlayers (8) and (9). an intermediate layer (13) of soft metal, profiled on at least one surface.