CS209199B1 - Apparatus for manufacture of semiconductor structures - Google Patents

Apparatus for manufacture of semiconductor structures Download PDF

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CS209199B1
CS209199B1 CS77725A CS72577A CS209199B1 CS 209199 B1 CS209199 B1 CS 209199B1 CS 77725 A CS77725 A CS 77725A CS 72577 A CS72577 A CS 72577A CS 209199 B1 CS209199 B1 CS 209199B1
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semiconductor substrate
ion
mask
ion beam
semiconductor
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Rudolph Sacher
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Rudolph Sacher
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • H01L21/31116Etching inorganic layers by chemical means by dry-etching
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31144Etching the insulating layers by chemical or physical means using masks
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/3115Doping the insulating layers
    • H01L21/31155Doping the insulating layers by ion implantation
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32131Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3215Doping the layers

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Description

(54) Zařízení k výrobě polovodičových struktur(54) Equipment for the production of semiconductor structures

Vynález se týká zařízení k výrobě polovodičových struktur, zejména k vytváření struktur izolačních a elektricky vodivých vrstev na polovodičových substrátech iontovým bombardováním, kde mezi iontovým zdrojem a polovodičovým substrátem je vlažena maska s vytvářenou strukturou a při kterém se vyvolávají lokálně omezené změny v polovodičovém substrátu případně ve vrstvách na tomto substrátu.The invention relates to a device for the production of semiconductor structures, in particular for forming insulating and electrically conductive layer structures on semiconductor substrates by ion bombardment, wherein a mask is formed between the ion source and the semiconductor substrate and induces locally limited changes in the semiconductor substrate layers on this substrate.

Je známé, že při výrobě polovodičových stavebních prvků se k vytváření struktur používá f otooptických zařízení. Přitom se vrstvy, na kterých se mají vytvořit struktury, potáhnou fotolakem citlivým na světlo a potom se pomocí fotooptického zařízení zobrazí na lakové vrstvě fotošablona se žádanými strukturami. Při následujícím vyvolávaní se vrstva fotolaku lokálně omezeně odstraní. Na těchto místech se pak vrstva, která leží pod ním, úplně nebo částečně odstraní kapalným leptacím médiem. Vrstvy, kde se vytvářejí struktury, mohou být polovodičové vrstvy, izolační vrstvy nebo vodivé vrstvy.It is known that in the manufacture of semiconductor components, rotoptic devices are used to form structures. In this case, the layers on which the structures are to be formed are coated with a light-sensitive photo-paint and then a photo-template with the desired structures is displayed on the lacquer layer using a photo-optical device. Upon subsequent development, the photo cloud layer is removed locally to a limited extent. At these points, the underlying layer is then completely or partially removed by the liquid etching medium. The layers where the structures are formed may be semiconductor layers, insulating layers or conductive layers.

Světelně-optická zařízení k fotolitografickému vytváření struktur mají tu podstatnou nevýhodu, že jejich rozlišovací schopnost je teoreticky omezená vlnovou délkou použitého elektromagnetického záření. Fotošablony potřebné pro tato zařízení mají v důsledku nebezpečí znečištění poměrně malou životnost.Light-optical devices for photolithographic structure formation have the significant disadvantage that their resolution is theoretically limited by the wavelength of the electromagnetic radiation used. The photo templates required for these devices have a relatively low lifetime due to the risk of contamination.

Rovněž známá jsou elektronově-optická zařízení, ve kterých elektronový paprsek ze zdroje se zaostřuje na vrstvu fotolaku, ulpívající na povrchu materiálu, a vytváří se rastrový obraz vyráběné struktury. Elektronově-optická zařízení mají tu nevýhodu, že k vytváření struktur jsou nezbytné ulpívající vrstvy citlivé na elektrony.Electron-optical devices are also known in which an electron beam from a source is focused on a layer of photo-paint adhering to the surface of the material, and a raster image of the fabric is produced. Electron-optical devices have the disadvantage that electron-sensitive adhesive layers are necessary to form structures.

Existují iontově-optická zařízení k dotování struktur, kde iontový páprsek ze zdroje iontů se zaostřuje na povrchu materiálu a vytváří se rastrový obraz dotované struktury. Při vhodné volbě druhu a energie iontů mohou tato zařízení sloužit i k nanášení nebo odstraňování vrstev z materiálů. Podstatnou nevýhodou je časová náročnost při výrobě struktur, poněvadž k vytváření struktury materiálu je třeba vysokých dávek iontů. Rovněž je známé, že kysličník křemičitý ozářený ionty má oproti neozářenému kysličníku v závislosti na dávce záření a na jakosti kysličníku různou rychlost leptání.There are ion-optical devices for doping structures, wherein the ion beam from the ion source focuses on the surface of the material and forms a raster image of the doped structure. With appropriate choice of ion type and energy, these devices can also serve to deposit or remove layers from materials. A significant disadvantage is the time required to manufacture the structures, since high doses of ions are required to form the material structure. It is also known that ion irradiated silica has different etch rates relative to the irradiated oxide depending on the dose of radiation and the quality of the oxide.

Účelem vynálezu je odstranit uvedené nevýhody a umožnit bez použití fotolitografie výrobu strukturních metariálů, aby byla rychlá a přesná.The purpose of the invention is to overcome these disadvantages and to enable the production of structural materials without the use of photolithography to be fast and accurate.

Úkolem vynálezu tedy je vypracovat zařízení k výrobě polovodičových struktur iontovým bom209199SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide an apparatus for producing semiconductor structures by ionic bom209199

r bardováním, které by zajišťovalo při dobré reprodukovatelnosti parametrů vyšší rozlišovací schopnost a tedy vyšší stupeň integrace než fotooptická zařízení a znemožňovalo vytváření nečistot.barding, which, with good reproducibility of the parameters, would provide a higher resolution and thus a higher degree of integration than photo-optical devices and prevent the formation of impurities.

Podle vynálezu je tento úkol vyřešen tím, že maska je mezi iontovým zdrojem a polovodičovým substrátem umístěna tak, že na polovodičovém substrátu nebo na vrstvách ležících na. tomto substrátu se vytvoří paprskem iontů zmenšený obraz masky, a v závislosti na druhu iontů, teplotě substrátu, dávce a energii iontů se vyvolá rozdílná rychlost leptání; na jejím základě lze po následujícím suchém a mokrém leptání vytvořit žádnou polovodičovou strukturu.According to the invention, this object is achieved by placing the mask between the ion source and the semiconductor substrate so that it is located on the semiconductor substrate or on the layers lying on it. a reduced image of the mask is produced by the ion beam, and a different etching rate is induced depending on the type of ion, substrate temperature, dose and ion energy; based on this, no semiconductor structure can be formed after the subsequent dry and wet etching.

Zařízení podle vynálezu, znázorněné na výkrese, sestává z vakuové komory 10 s iontovým zdrojem 11. Iontový zdroj 11 vysílá iontový paprsek 12, například paprsek protonů nebo směsí iontů lehkých prvků s velkým rozptylem.The device according to the invention shown in the drawing consists of a vacuum chamber 10 with an ion source 11. The ion source 11 emits an ion beam 12, for example a proton beam or a mixture of light element ions with a large dispersion.

Iontový paprsek 12 prochází zobrazovanou maskou 13, která je uložena v přední části zařízení a v níž jsou vytvořeny požadované polovodičové struktury, a zaostřuje se iontově optickou soustavou, sestávající ze sběrné čočky 14a, a ze složené čočky 14b, na polovodičový substrát 15 uložený v zadní části zařízení.The ion beam 12 passes through the imaged mask 13, which is embedded in the front of the device and in which the desired semiconductor structures are formed, and is focused through the ion optical system consisting of the collecting lens 14a and the composite lens 14b to the semiconductor substrate 15 equipment parts.

Při průchodu iontového paprsku 12 prostorem mezi maskou 13 v přední části zařízení a polovodičovým substrátem 15 v zadní části zařízení se průměr paprsku 12 zmenší desetinásobně.As the ion beam 12 passes through the space between the mask 13 at the front of the device and the semiconductor substrate 15 at the rear of the device, the diameter of the beam 12 is reduced tenfold.

Polovodičový substrát 15 může být například křemíkový, pokrytý vrstvou 15' z kysličníku křemičitého nebo kovu, případně kysličníku křemičitého a kovu. Polovodičový substrát 15 je upevněn v držáku 16, který lze posouvat pomocí mechanického dopravního ústrojí 17 v zadní části zařízení v rovině rovnoběžné s rovinou masky 13.For example, the semiconductor substrate 15 may be silicon coated with a layer 15 'of silicon dioxide or metal, optionally silica and metal. The semiconductor substrate 15 is mounted in a holder 16 which can be moved by a mechanical conveying device 17 at the rear of the device in a plane parallel to the plane of the mask 13.

Toto mechanické dopravní ústrojí 17 umožňuje vysunutí držáku 16 z vakuové komory 20, aby se substrát 15 mohl nahradit novým, a dá se použít také k definovanému místnímu posunutí polovodičového substrátu 15 v rovinně kolmé k ose iontového paprsku 12. Takové posouvání umožňuje například provádět postupp^,st|jké jžobrázení v různých oblastech polovodičového substrátu 15 a tím vytvářet několik identických obrazů. Při nehybném držáku 16 lze k vytvoření stejných zobrazení na různých místech polovodičového substrátu 15 posouvat iontový paprsek 12 pomocí deflektoru 18 ve tvaru magnetu, který je napájen rozdílovým proudem z regulačního obvodu 19. Tento způsob posouvám místa zobrazení na polovodičovém substrátu 15 však vyžaduje poměrně dlouhou cestu dopadajícího záření, aby byly chyby zobrazení dostatečně malé.This mechanical conveying device 17 allows the holder 16 to be pulled out of the vacuum chamber 20 to replace the substrate 15 with a new one, and can also be used to define a local displacement of the semiconductor substrate 15 in a plane perpendicular to the axis of the ion beam 12. The same image in different regions of the semiconductor substrate 15 and thereby produce several identical images. With the stationary holder 16, the ion beam 12 can be moved by means of a magnet deflector 18, which is supplied by a differential current from the control circuit 19, to produce the same images at different locations on the semiconductor substrate 15. However, this method requires a relatively long path of the incident radiation so that the imaging errors are sufficiently small.

Maska 13 je upevněna v jednoduchém nosiči 20, který se dá vyjímat z vakuové komory 10, aby se z něj daly masky 13 snímat a nahrazovat jinými.The mask 13 is mounted in a simple carrier 20 which can be removed from the vacuum chamber 10 to remove and replace the masks 13 with others.

Ve speciálních případech může iontový paprsek 12 sestávat především z protonů (H+) s energií 60 až 100 ke V, přičemž se dosáhne rozlišovací schopnosti asi 10“4 nm.In special cases, the ion beam 12 may consist primarily of protons (H +) with the energy of 60 to 100 V, thereby achieving the resolution of about 10 "4 nm.

Dávka potřebná k vytváření struktury v lokálně omezených oblastech termických vrstev kysličníku křemičitého, případně napařených hliníkových vrstev suchým nebo mokrým leptáním, je 10~16 až 1018 protonů/cm2.The dose needed to form the structure in locally limited regions of thermal silica layers or possibly vaporized aluminum layers by dry or wet etching is 10-16 to 10 18 protons / cm 2 .

Aby bylo možno polovodičový substrát zpracovávat různým způsobem, používá se dílčích masek uložených lineárně nebo do kruhu; tyto dílčí masky se ukládají v předběžně nastavené poloze do dráhy iontového paprsku 12 v přední části vakuové komory 10 a umožňují vyrobit konečnou polovodičovou strukturu jednotlivými po sobě následujícími pochody ozáření.In order to be able to process the semiconductor substrate in various ways, sub-masks are used which are arranged linearly or in a circle; these sub-masks are deposited in a preset position in the ion beam path 12 in front of the vacuum chamber 10 and allow the final semiconductor structure to be produced by successive irradiation processes.

V zařízení podle vynálezu lze použít masky s nepřesnými detaily. Tyto masky se neznečišťují a neopotřebují a mají delší životnost než fotoligrafické masky (fotošablony).Masks with inaccurate details can be used in the device of the invention. These masks do not become dirty or wear out and have a longer lifetime than photoligraphic masks (photo templates).

Claims (6)

PREDMETSUBJECT 1. Zařízení k výrobě polovodičových struktur, zejména k vytváření struktur na polovodičových substrátech nebo na nich uložených izolačních anebo vodivých vrstvách iontovým bombardováním, kde mezi iontovým zdrojem a polovodičovým substrátem je vložena maska s vytvářenou strukturou a při kterém se vyvolávají lokálně omezené změny v polovodičovém substrátu případně ve vrstvách · nacházejících se na tomto substrátu, vyznačující j;e tím, že ve vakuové komoře (10) je maska (l3), na níž jsou oblasti propouštějící a nepropouštějící ionty upraveny podle struktury vytvářené na polovodičovém substrátu a rozměry detailů mají pevné zvětšené měřítko než rozměry detailů vytvářené polovodičové struktury, umístěna v přední části zařízení mezi iontovým zdrojem (11), vytvářejícím silně rozbíhavý iontový svazek s vysokou hustotou, a iontově optickou soustavou,1. Apparatus for the production of semiconductor structures, in particular for forming structures on semiconductor substrates or insulating or conductive layers deposited thereon by ion bombardment, wherein a mask with the structure formed is inserted between the ion source and the semiconductor substrate and causing locally limited changes in the semiconductor substrate optionally in layers located on the substrate, characterized in that in the vacuum chamber (10) there is a mask (13) on which the ion-permeable and impermeable regions are adapted according to the structure formed on the semiconductor substrate and the dimensions of the details have a fixed enlarged a scale than the dimensions of the details of the semiconductor structure formed, located at the front of the device, between the ion source (11) forming a strongly diverging high density ion beam and the ion optical system, VYNALEZU která je vůči iontovému zdroji (11) jemně nastavena a zaostřuje iontový paprsek (12) mezi přední a zadní částí zařízení, přičemž v zadní části zařízení je posuvně uložen polovodičový substrát (15) a před ním iontově optická soustava tak, že povrch polovodičového substrátu (15) je vystaven působení tvarovaného iontového paprsku (12).OF THE INVENTION which is finely aligned with respect to the ion source (11) and focuses the ion beam (12) between the front and rear of the device, the semiconductor substrate (15) and the ionic optical assembly displaceably disposed in the rear of the device (15) is exposed to the shaped ion beam (12). 2. Zařízení podle bodu 1, vyznačující se tím, že obsahuje nastavovací soustavy ke znemožnění chybného nastavení polovodičového substrátu (15) a iontového paprsku (12) mezi jednotlivými operacemi iontového ozařování.Device according to claim 1, characterized in that it comprises adjustment systems to prevent misalignment of the semiconductor substrate (15) and the ion beam (12) between the individual ion irradiation operations. 3. Zařízení podle bodu 2, vyznačující se tím, že nastavovací soustavy zahrnují ústrojí (17) k posoujápí držáku (16) materiálu v rovině polovodičového substrátu (15) rovnoběžné s rovinou masky (13) a kolmé k oSe iontového paprsku (12).Device according to claim 2, characterized in that the adjusting assemblies comprise means (17) for advancing the material holder (16) in the plane of the semiconductor substrate (15) parallel to the plane of the mask (13) and perpendicular to the axis of the ion beam (12). '' 4. Zúřížení podle boud 2, vyznačující se tím, že nastaýóýafcí soustavy zahrnují deflektor (18) záření h^js^M Íniezi iontovým zdrojem (11) v přední části zatíženi a:polovodičovým substrátem (15) v zadní části zařízení. i4. The apparatus of claim 2, wherein the other systems include a radiation deflector (18), including a ion source (11) at the front of the load and a semiconductor substrate (15) at the rear of the apparatus. and 5. Zařízení podle bodu 1, vyznačující se tím, že průměr iontového paprsku (12) mezi maskou (13) v přední Části zařízení a polovodičovým substrátem (15) v zadní části zařízení odpovídá poměru 10:1.Device according to claim 1, characterized in that the diameter of the ion beam (12) between the mask (13) at the front of the device and the semiconductor substrate (15) at the rear of the device corresponds to a 10: 1 ratio. 6. Zařízení podle bodu 1, vyznačující se tím, že nejméně jedna maska (13) je uložena v nosiči (20), případně v polohově nastaveném měniči.Device according to claim 1, characterized in that the at least one mask (13) is mounted in a carrier (20) or in a position-adjustable transducer.
CS77725A 1976-02-04 1977-02-03 Apparatus for manufacture of semiconductor structures CS209199B1 (en)

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US4325182A (en) * 1980-08-25 1982-04-20 General Electric Company Fast isolation diffusion
GB2165692B (en) * 1984-08-25 1989-05-04 Ricoh Kk Manufacture of interconnection patterns
AT386297B (en) * 1985-09-11 1988-07-25 Ims Ionen Mikrofab Syst ION RADIATION DEVICE AND METHOD FOR CARRYING OUT CHANGES, IN PARTICULAR. REPAIRS ON SUBSTRATES USING AN ION RADIATOR
AT393925B (en) * 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst ARRANGEMENT FOR IMPLEMENTING A METHOD FOR POSITIONING THE IMAGE OF THE STRUCTURE ON A MASK TO A SUBSTRATE, AND METHOD FOR ALIGNING MARKERS ARRANGED ON A MASK ON MARKINGS ARRANGED ON A CARRIER
US5266409A (en) * 1989-04-28 1993-11-30 Digital Equipment Corporation Hydrogenated carbon compositions
US5281851A (en) * 1992-10-02 1994-01-25 Hewlett-Packard Company Integrated circuit packaging with reinforced leads

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US3682729A (en) * 1969-12-30 1972-08-08 Ibm Method of changing the physical properties of a metallic film by ion beam formation and devices produced thereby
US3666548A (en) * 1970-01-06 1972-05-30 Ibm Monocrystalline semiconductor body having dielectrically isolated regions and method of forming
DE2115823C3 (en) * 1971-04-01 1975-09-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Method for producing microstructures on a semiconductor wafer
US3804738A (en) * 1973-06-29 1974-04-16 Ibm Partial planarization of electrically insulative films by resputtering
NL7413977A (en) * 1974-10-25 1976-04-27 Philips Nv APPLICATION OF A CONDUCTOR LAYER PATTERN WITH PARTS LOCATED AT A MINIMUM DISTANCE, ESPECIALLY IN THE MANUFACTURE OF SEMI-CONDUCTOR DEVICES.
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