CS209199B1 - Apparatus for manufacture of semiconductor structures - Google Patents
Apparatus for manufacture of semiconductor structures Download PDFInfo
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- CS209199B1 CS209199B1 CS77725A CS72577A CS209199B1 CS 209199 B1 CS209199 B1 CS 209199B1 CS 77725 A CS77725 A CS 77725A CS 72577 A CS72577 A CS 72577A CS 209199 B1 CS209199 B1 CS 209199B1
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- semiconductor substrate
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- ion beam
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- 239000004065 semiconductor Substances 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims description 26
- 238000010884 ion-beam technique Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 238000010849 ion bombardment Methods 0.000 claims description 2
- 230000000712 assembly Effects 0.000 claims 1
- 238000000429 assembly Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 16
- 150000002500 ions Chemical class 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/3115—Doping the insulating layers
- H01L21/31155—Doping the insulating layers by ion implantation
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
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- Electron Beam Exposure (AREA)
Description
(54) Zařízení k výrobě polovodičových struktur(54) Equipment for the production of semiconductor structures
Vynález se týká zařízení k výrobě polovodičových struktur, zejména k vytváření struktur izolačních a elektricky vodivých vrstev na polovodičových substrátech iontovým bombardováním, kde mezi iontovým zdrojem a polovodičovým substrátem je vlažena maska s vytvářenou strukturou a při kterém se vyvolávají lokálně omezené změny v polovodičovém substrátu případně ve vrstvách na tomto substrátu.The invention relates to a device for the production of semiconductor structures, in particular for forming insulating and electrically conductive layer structures on semiconductor substrates by ion bombardment, wherein a mask is formed between the ion source and the semiconductor substrate and induces locally limited changes in the semiconductor substrate layers on this substrate.
Je známé, že při výrobě polovodičových stavebních prvků se k vytváření struktur používá f otooptických zařízení. Přitom se vrstvy, na kterých se mají vytvořit struktury, potáhnou fotolakem citlivým na světlo a potom se pomocí fotooptického zařízení zobrazí na lakové vrstvě fotošablona se žádanými strukturami. Při následujícím vyvolávaní se vrstva fotolaku lokálně omezeně odstraní. Na těchto místech se pak vrstva, která leží pod ním, úplně nebo částečně odstraní kapalným leptacím médiem. Vrstvy, kde se vytvářejí struktury, mohou být polovodičové vrstvy, izolační vrstvy nebo vodivé vrstvy.It is known that in the manufacture of semiconductor components, rotoptic devices are used to form structures. In this case, the layers on which the structures are to be formed are coated with a light-sensitive photo-paint and then a photo-template with the desired structures is displayed on the lacquer layer using a photo-optical device. Upon subsequent development, the photo cloud layer is removed locally to a limited extent. At these points, the underlying layer is then completely or partially removed by the liquid etching medium. The layers where the structures are formed may be semiconductor layers, insulating layers or conductive layers.
Světelně-optická zařízení k fotolitografickému vytváření struktur mají tu podstatnou nevýhodu, že jejich rozlišovací schopnost je teoreticky omezená vlnovou délkou použitého elektromagnetického záření. Fotošablony potřebné pro tato zařízení mají v důsledku nebezpečí znečištění poměrně malou životnost.Light-optical devices for photolithographic structure formation have the significant disadvantage that their resolution is theoretically limited by the wavelength of the electromagnetic radiation used. The photo templates required for these devices have a relatively low lifetime due to the risk of contamination.
Rovněž známá jsou elektronově-optická zařízení, ve kterých elektronový paprsek ze zdroje se zaostřuje na vrstvu fotolaku, ulpívající na povrchu materiálu, a vytváří se rastrový obraz vyráběné struktury. Elektronově-optická zařízení mají tu nevýhodu, že k vytváření struktur jsou nezbytné ulpívající vrstvy citlivé na elektrony.Electron-optical devices are also known in which an electron beam from a source is focused on a layer of photo-paint adhering to the surface of the material, and a raster image of the fabric is produced. Electron-optical devices have the disadvantage that electron-sensitive adhesive layers are necessary to form structures.
Existují iontově-optická zařízení k dotování struktur, kde iontový páprsek ze zdroje iontů se zaostřuje na povrchu materiálu a vytváří se rastrový obraz dotované struktury. Při vhodné volbě druhu a energie iontů mohou tato zařízení sloužit i k nanášení nebo odstraňování vrstev z materiálů. Podstatnou nevýhodou je časová náročnost při výrobě struktur, poněvadž k vytváření struktury materiálu je třeba vysokých dávek iontů. Rovněž je známé, že kysličník křemičitý ozářený ionty má oproti neozářenému kysličníku v závislosti na dávce záření a na jakosti kysličníku různou rychlost leptání.There are ion-optical devices for doping structures, wherein the ion beam from the ion source focuses on the surface of the material and forms a raster image of the doped structure. With appropriate choice of ion type and energy, these devices can also serve to deposit or remove layers from materials. A significant disadvantage is the time required to manufacture the structures, since high doses of ions are required to form the material structure. It is also known that ion irradiated silica has different etch rates relative to the irradiated oxide depending on the dose of radiation and the quality of the oxide.
Účelem vynálezu je odstranit uvedené nevýhody a umožnit bez použití fotolitografie výrobu strukturních metariálů, aby byla rychlá a přesná.The purpose of the invention is to overcome these disadvantages and to enable the production of structural materials without the use of photolithography to be fast and accurate.
Úkolem vynálezu tedy je vypracovat zařízení k výrobě polovodičových struktur iontovým bom209199SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide an apparatus for producing semiconductor structures by ionic bom209199
r bardováním, které by zajišťovalo při dobré reprodukovatelnosti parametrů vyšší rozlišovací schopnost a tedy vyšší stupeň integrace než fotooptická zařízení a znemožňovalo vytváření nečistot.barding, which, with good reproducibility of the parameters, would provide a higher resolution and thus a higher degree of integration than photo-optical devices and prevent the formation of impurities.
Podle vynálezu je tento úkol vyřešen tím, že maska je mezi iontovým zdrojem a polovodičovým substrátem umístěna tak, že na polovodičovém substrátu nebo na vrstvách ležících na. tomto substrátu se vytvoří paprskem iontů zmenšený obraz masky, a v závislosti na druhu iontů, teplotě substrátu, dávce a energii iontů se vyvolá rozdílná rychlost leptání; na jejím základě lze po následujícím suchém a mokrém leptání vytvořit žádnou polovodičovou strukturu.According to the invention, this object is achieved by placing the mask between the ion source and the semiconductor substrate so that it is located on the semiconductor substrate or on the layers lying on it. a reduced image of the mask is produced by the ion beam, and a different etching rate is induced depending on the type of ion, substrate temperature, dose and ion energy; based on this, no semiconductor structure can be formed after the subsequent dry and wet etching.
Zařízení podle vynálezu, znázorněné na výkrese, sestává z vakuové komory 10 s iontovým zdrojem 11. Iontový zdroj 11 vysílá iontový paprsek 12, například paprsek protonů nebo směsí iontů lehkých prvků s velkým rozptylem.The device according to the invention shown in the drawing consists of a vacuum chamber 10 with an ion source 11. The ion source 11 emits an ion beam 12, for example a proton beam or a mixture of light element ions with a large dispersion.
Iontový paprsek 12 prochází zobrazovanou maskou 13, která je uložena v přední části zařízení a v níž jsou vytvořeny požadované polovodičové struktury, a zaostřuje se iontově optickou soustavou, sestávající ze sběrné čočky 14a, a ze složené čočky 14b, na polovodičový substrát 15 uložený v zadní části zařízení.The ion beam 12 passes through the imaged mask 13, which is embedded in the front of the device and in which the desired semiconductor structures are formed, and is focused through the ion optical system consisting of the collecting lens 14a and the composite lens 14b to the semiconductor substrate 15 equipment parts.
Při průchodu iontového paprsku 12 prostorem mezi maskou 13 v přední části zařízení a polovodičovým substrátem 15 v zadní části zařízení se průměr paprsku 12 zmenší desetinásobně.As the ion beam 12 passes through the space between the mask 13 at the front of the device and the semiconductor substrate 15 at the rear of the device, the diameter of the beam 12 is reduced tenfold.
Polovodičový substrát 15 může být například křemíkový, pokrytý vrstvou 15' z kysličníku křemičitého nebo kovu, případně kysličníku křemičitého a kovu. Polovodičový substrát 15 je upevněn v držáku 16, který lze posouvat pomocí mechanického dopravního ústrojí 17 v zadní části zařízení v rovině rovnoběžné s rovinou masky 13.For example, the semiconductor substrate 15 may be silicon coated with a layer 15 'of silicon dioxide or metal, optionally silica and metal. The semiconductor substrate 15 is mounted in a holder 16 which can be moved by a mechanical conveying device 17 at the rear of the device in a plane parallel to the plane of the mask 13.
Toto mechanické dopravní ústrojí 17 umožňuje vysunutí držáku 16 z vakuové komory 20, aby se substrát 15 mohl nahradit novým, a dá se použít také k definovanému místnímu posunutí polovodičového substrátu 15 v rovinně kolmé k ose iontového paprsku 12. Takové posouvání umožňuje například provádět postupp^,st|jké jžobrázení v různých oblastech polovodičového substrátu 15 a tím vytvářet několik identických obrazů. Při nehybném držáku 16 lze k vytvoření stejných zobrazení na různých místech polovodičového substrátu 15 posouvat iontový paprsek 12 pomocí deflektoru 18 ve tvaru magnetu, který je napájen rozdílovým proudem z regulačního obvodu 19. Tento způsob posouvám místa zobrazení na polovodičovém substrátu 15 však vyžaduje poměrně dlouhou cestu dopadajícího záření, aby byly chyby zobrazení dostatečně malé.This mechanical conveying device 17 allows the holder 16 to be pulled out of the vacuum chamber 20 to replace the substrate 15 with a new one, and can also be used to define a local displacement of the semiconductor substrate 15 in a plane perpendicular to the axis of the ion beam 12. The same image in different regions of the semiconductor substrate 15 and thereby produce several identical images. With the stationary holder 16, the ion beam 12 can be moved by means of a magnet deflector 18, which is supplied by a differential current from the control circuit 19, to produce the same images at different locations on the semiconductor substrate 15. However, this method requires a relatively long path of the incident radiation so that the imaging errors are sufficiently small.
Maska 13 je upevněna v jednoduchém nosiči 20, který se dá vyjímat z vakuové komory 10, aby se z něj daly masky 13 snímat a nahrazovat jinými.The mask 13 is mounted in a simple carrier 20 which can be removed from the vacuum chamber 10 to remove and replace the masks 13 with others.
Ve speciálních případech může iontový paprsek 12 sestávat především z protonů (H+) s energií 60 až 100 ke V, přičemž se dosáhne rozlišovací schopnosti asi 10“4 nm.In special cases, the ion beam 12 may consist primarily of protons (H +) with the energy of 60 to 100 V, thereby achieving the resolution of about 10 "4 nm.
Dávka potřebná k vytváření struktury v lokálně omezených oblastech termických vrstev kysličníku křemičitého, případně napařených hliníkových vrstev suchým nebo mokrým leptáním, je 10~16 až 1018 protonů/cm2.The dose needed to form the structure in locally limited regions of thermal silica layers or possibly vaporized aluminum layers by dry or wet etching is 10-16 to 10 18 protons / cm 2 .
Aby bylo možno polovodičový substrát zpracovávat různým způsobem, používá se dílčích masek uložených lineárně nebo do kruhu; tyto dílčí masky se ukládají v předběžně nastavené poloze do dráhy iontového paprsku 12 v přední části vakuové komory 10 a umožňují vyrobit konečnou polovodičovou strukturu jednotlivými po sobě následujícími pochody ozáření.In order to be able to process the semiconductor substrate in various ways, sub-masks are used which are arranged linearly or in a circle; these sub-masks are deposited in a preset position in the ion beam path 12 in front of the vacuum chamber 10 and allow the final semiconductor structure to be produced by successive irradiation processes.
V zařízení podle vynálezu lze použít masky s nepřesnými detaily. Tyto masky se neznečišťují a neopotřebují a mají delší životnost než fotoligrafické masky (fotošablony).Masks with inaccurate details can be used in the device of the invention. These masks do not become dirty or wear out and have a longer lifetime than photoligraphic masks (photo templates).
Claims (6)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DD76191181A DD136670A1 (en) | 1976-02-04 | 1976-02-04 | METHOD AND DEVICE FOR PRODUCING SEMICONDUCTOR STRUCTURES |
Publications (1)
Publication Number | Publication Date |
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CS209199B1 true CS209199B1 (en) | 1981-11-30 |
Family
ID=5503510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CS77725A CS209199B1 (en) | 1976-02-04 | 1977-02-03 | Apparatus for manufacture of semiconductor structures |
Country Status (7)
Country | Link |
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JP (1) | JPS52155064A (en) |
CS (1) | CS209199B1 (en) |
DD (1) | DD136670A1 (en) |
DE (1) | DE2701356A1 (en) |
FR (1) | FR2340565A1 (en) |
GB (2) | GB1597595A (en) |
SE (1) | SE7700374L (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4325182A (en) * | 1980-08-25 | 1982-04-20 | General Electric Company | Fast isolation diffusion |
GB2165692B (en) * | 1984-08-25 | 1989-05-04 | Ricoh Kk | Manufacture of interconnection patterns |
AT386297B (en) * | 1985-09-11 | 1988-07-25 | Ims Ionen Mikrofab Syst | ION RADIATION DEVICE AND METHOD FOR CARRYING OUT CHANGES, IN PARTICULAR. REPAIRS ON SUBSTRATES USING AN ION RADIATOR |
AT393925B (en) * | 1987-06-02 | 1992-01-10 | Ims Ionen Mikrofab Syst | ARRANGEMENT FOR IMPLEMENTING A METHOD FOR POSITIONING THE IMAGE OF THE STRUCTURE ON A MASK TO A SUBSTRATE, AND METHOD FOR ALIGNING MARKERS ARRANGED ON A MASK ON MARKINGS ARRANGED ON A CARRIER |
US5266409A (en) * | 1989-04-28 | 1993-11-30 | Digital Equipment Corporation | Hydrogenated carbon compositions |
US5281851A (en) * | 1992-10-02 | 1994-01-25 | Hewlett-Packard Company | Integrated circuit packaging with reinforced leads |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3682729A (en) * | 1969-12-30 | 1972-08-08 | Ibm | Method of changing the physical properties of a metallic film by ion beam formation and devices produced thereby |
US3666548A (en) * | 1970-01-06 | 1972-05-30 | Ibm | Monocrystalline semiconductor body having dielectrically isolated regions and method of forming |
DE2115823C3 (en) * | 1971-04-01 | 1975-09-18 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Method for producing microstructures on a semiconductor wafer |
US3804738A (en) * | 1973-06-29 | 1974-04-16 | Ibm | Partial planarization of electrically insulative films by resputtering |
NL7413977A (en) * | 1974-10-25 | 1976-04-27 | Philips Nv | APPLICATION OF A CONDUCTOR LAYER PATTERN WITH PARTS LOCATED AT A MINIMUM DISTANCE, ESPECIALLY IN THE MANUFACTURE OF SEMI-CONDUCTOR DEVICES. |
DE2554638A1 (en) * | 1975-12-04 | 1977-06-16 | Siemens Ag | PROCESS FOR GENERATING DEFINED BOOT ANGLES FOR AN ETCHED EDGE |
-
1976
- 1976-02-04 DD DD76191181A patent/DD136670A1/en unknown
-
1977
- 1977-01-14 SE SE7700374A patent/SE7700374L/en unknown
- 1977-01-14 DE DE19772701356 patent/DE2701356A1/en active Pending
- 1977-01-24 GB GB25964/78A patent/GB1597595A/en not_active Expired
- 1977-01-24 GB GB2738/77A patent/GB1597594A/en not_active Expired
- 1977-01-27 JP JP820077A patent/JPS52155064A/en active Pending
- 1977-01-31 FR FR7702648A patent/FR2340565A1/en not_active Withdrawn
- 1977-02-03 CS CS77725A patent/CS209199B1/en unknown
Also Published As
Publication number | Publication date |
---|---|
GB1597595A (en) | 1981-09-09 |
JPS52155064A (en) | 1977-12-23 |
SE7700374L (en) | 1977-08-05 |
DE2701356A1 (en) | 1977-08-18 |
GB1597594A (en) | 1981-09-09 |
FR2340565A1 (en) | 1977-09-02 |
DD136670A1 (en) | 1979-07-18 |
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