CS201113B1 - Semiconductor device particularly the semiconductor diode with ammeliorated permeability characteristics - Google Patents
Semiconductor device particularly the semiconductor diode with ammeliorated permeability characteristics Download PDFInfo
- Publication number
- CS201113B1 CS201113B1 CS762262A CS226276A CS201113B1 CS 201113 B1 CS201113 B1 CS 201113B1 CS 762262 A CS762262 A CS 762262A CS 226276 A CS226276 A CS 226276A CS 201113 B1 CS201113 B1 CS 201113B1
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- semiconductor
- voltage
- diode
- semiconductor device
- current
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 230000035699 permeability Effects 0.000 title description 2
- IOYNQIMAUDJVEI-BMVIKAAMSA-N Tepraloxydim Chemical group C1C(=O)C(C(=N/OC\C=C\Cl)/CC)=C(O)CC1C1CCOCC1 IOYNQIMAUDJVEI-BMVIKAAMSA-N 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 9
- 238000005468 ion implantation Methods 0.000 abstract 1
- 210000000707 wrist Anatomy 0.000 abstract 1
- 230000007704 transition Effects 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- JIGWWGDIEUWCOR-UHFFFAOYSA-N 3-(1,4-diazabicyclo[3.2.2]nonan-4-yl)-6-fluorodibenzothiophene 5,5-dioxide Chemical compound C1=C2S(=O)(=O)C=3C(F)=CC=CC=3C2=CC=C1N1CCN2CCC1CC2 JIGWWGDIEUWCOR-UHFFFAOYSA-N 0.000 description 1
- 101100285518 Drosophila melanogaster how gene Proteins 0.000 description 1
- 230000001149 cognitive effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 210000002307 prostate Anatomy 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/70—Tunnel-effect diodes
- H10D8/75—Tunnel-effect PN diodes, e.g. Esaki diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD185436A DD118336A1 (de) | 1975-04-15 | 1975-04-15 | Halbleiteranordnung,insbesondere halbleiterdiode mit verbesserter durchlasskennlinie |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CS201113B1 true CS201113B1 (en) | 1980-10-31 |
Family
ID=5499938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS762262A CS201113B1 (en) | 1975-04-15 | 1976-04-06 | Semiconductor device particularly the semiconductor diode with ammeliorated permeability characteristics |
Country Status (5)
| Country | Link |
|---|---|
| CS (1) | CS201113B1 (en:Method) |
| DD (1) | DD118336A1 (en:Method) |
| DE (1) | DE2603935A1 (en:Method) |
| FR (1) | FR2308207A1 (en:Method) |
| IT (1) | IT1058060B (en:Method) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2719457A1 (de) * | 1977-04-30 | 1978-11-02 | California Linear Circuits Inc | Halbleiter-uebergang |
-
1975
- 1975-04-15 DD DD185436A patent/DD118336A1/xx unknown
-
1976
- 1976-02-03 DE DE2603935*[A patent/DE2603935A1/de not_active Ceased
- 1976-04-01 IT IT48835/76A patent/IT1058060B/it active
- 1976-04-06 CS CS762262A patent/CS201113B1/cs unknown
- 1976-04-13 FR FR7610880A patent/FR2308207A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2603935A1 (de) | 1976-10-28 |
| DD118336A1 (de) | 1976-02-20 |
| FR2308207B3 (en:Method) | 1979-01-05 |
| FR2308207A1 (fr) | 1976-11-12 |
| IT1058060B (it) | 1982-04-10 |
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