CS197384B1 - Filler for making the superconductors with the betawolframe phase - Google Patents
Filler for making the superconductors with the betawolframe phase Download PDFInfo
- Publication number
- CS197384B1 CS197384B1 CS11673A CS11673A CS197384B1 CS 197384 B1 CS197384 B1 CS 197384B1 CS 11673 A CS11673 A CS 11673A CS 11673 A CS11673 A CS 11673A CS 197384 B1 CS197384 B1 CS 197384B1
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- phase
- vanadium
- superconductors
- niobium
- gallium
- Prior art date
Links
- 239000002887 superconductor Substances 0.000 title claims description 9
- 239000000945 filler Substances 0.000 title 1
- 229910052758 niobium Inorganic materials 0.000 claims description 8
- 239000010955 niobium Substances 0.000 claims description 8
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 8
- 229910052720 vanadium Inorganic materials 0.000 claims description 8
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 239000010953 base metal Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000012071 phase Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 5
- 239000011888 foil Substances 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- BPAABJIBIBFRST-UHFFFAOYSA-N [V].[V].[V].[Ga] Chemical compound [V].[V].[V].[Ga] BPAABJIBIBFRST-UHFFFAOYSA-N 0.000 description 3
- KJSMVPYGGLPWOE-UHFFFAOYSA-N niobium tin Chemical compound [Nb].[Sn] KJSMVPYGGLPWOE-UHFFFAOYSA-N 0.000 description 3
- 229910000657 niobium-tin Inorganic materials 0.000 description 3
- 229910000999 vanadium-gallium Inorganic materials 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100440173 Mus musculus Clu gene Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Landscapes
- Superconductors And Manufacturing Methods Therefor (AREA)
Description
(54) Podložka pre tvorbu aupravodičov β beta-volfrámovou fázou . Vynález ea týká podložky pre tvorbu supravodičov β /5-volfrámovou fázou.(54) Substrate for β beta-tungsten phase formation and conductors. The present invention relates to a substrate for the formation of superconductors by the β / 5-tungsten phase.
Doteraz sa supravodiče a β-volfrámovou Struktárou vyrábajú difúziou z tekutej fázy pomocou folie základných kovov tvoriacich supravodič (niobu alebo vanádia), na ktorých ea difúziou z tekutej fázy cínu vytvoří na nióbovej podložke supravodivá niób-cínová fáza a difúziou z tekutej gáliovej fázy ne vanádiovej podložke supravodivá vanád-gáliová fáza. Nevýhodou tohto spčsobu přípravy aupravodičov s β-volfrámóVou fázou oproti vynálezu je, že podložky v tvare fólie nedávajú možnost výroby vodičov iného geometrického usporiadenie, napr. kruhového alebo Stvorhranného. Pokrývanie fólií cínom alebo gáliom vyžaduje vysoké teploty okolo 900 až 1200 °C, vysoké vákuum alebo ochrannú atmosféru vysokej čistoty a nakoniec na podložkách uvedeného typu je možné doeiahnuť nízké kritické prúdové hustoty ic·Up to now, superconductors and the β-tungsten structure have been produced by liquid phase diffusion using a superconductor foil (niobium or vanadium) base metal foil on which the superconducting niobium tin phase and the vanadium liquid diffusion from the tin liquid phase and superconducting vanadium gallium phase. A disadvantage of this method of preparing and β-tungsten phase conductors compared to the invention is that the foil-shaped pads do not give the possibility to produce conductors of other geometrical arrangement, e.g. circular or square. Coating of tin or gallium films require high temperature of 900 to 1200 ° C, high vacuum or a protective atmosphere of high purity, and the end supports of said type may doeiahnuť a low critical current density I C ·
Uvedené nevýhody v podstatnej miere odstřenuje vynález.These disadvantages are substantially eliminated by the invention.
Podstata vynálezu spočívá v tom, že podložka je vytvořená z najmenej jednej vrstvy drčtov základných kovov tvoriacich supravodič, a to niobu alebo vanádia. Drót je pokrytý me3ou alebo zliatinou médi eo základnými kovmi supravodič tvoriacimi, a to nióbom, cínom, germániom alebo vanádiom, gáliom a kremíkom, pričom obsah každého z nich, alebo v zliatine, je 1 až 20 hmotnostných percent.SUMMARY OF THE INVENTION The present invention is characterized in that the substrate is formed from at least one layer of base metal wires forming a superconductor, namely niobium or vanadium. The wire is coated with copper or an alloy of the superconductor base metal media, namely niobium, tin, germanium or vanadium, gallium, and silicon, each of which, or in the alloy, is 1 to 20 weight percent.
Výhodou vynálezu je, že umožňuje zvýSiť reakčný povrch, ktorému úměrně sa zvýSi ajAn advantage of the invention is that it allows to increase the reaction surface, which is proportionally increased
197 384197 384
197 394 kritický prúd. fialšia výhoda vytvárania podložiek pomocou drótov je v tom, Se umožňuje zhotovenie podložiek róznych tvarov. Podložky z drdtov a povrchovou-vrstvou médi legovanéj kovom podložky nie je potřebné už 3alej stabilizoval?, pretože zliatina, například me3 niob po difúznom odčerpaní niobu je lepšie vodivá ako hliník, ktorý sa pre stabilizáciu používá. Prednosťou vynálezu je tiež, Se umožňuje zhotovenie podložiek rdzneho tvaru, plných, dutých s geometrickým uapariadaním, potřebným pře výrobu vodičov pře striedavé prúdy.197 394 critical current. the more violent advantage of forming the pads by means of wires is that it is possible to produce pads of different shapes. Drum pads and surface-coated media alloyed with metal pads are no longer necessary to stabilize, since an alloy such as niobium after diffusion niobium depletion is better conductive than the aluminum used for stabilization. It is also an advantage of the invention to provide pads of different shape, solid, hollow, with the geometric arrangement required to produce alternating current conductors.
Na pripojenom výkrese ,sú schematicky znázorněné tvary podložiek. vytvořených z dlrdtov, a to na obr. la vo formě jednoduchej fólie, na obr. lb vo formě kruhového tvaru, na obr. lc vo formě štvorhranného tvaru a na obr. ld vo formě zdvojenej fólie.In the attached drawing, the shapes of the washers are shown schematically. FIG. 1a in the form of a single foil, FIG. 1b in the form of a circular shape, FIG. 1c in the form of a square shape and in FIG. 1d in the form of a double foil.
Příklad 1Example 1
Prevedenie niób-cínového supravodiče v tvare fólie. Niobové meSou pokryté drdty priemeru 20 pni v usporíadaní do tvaru fólie podl*a obr. la sa počinu jú prechodom cez cínový kúpel’ při teplote do 300 °C. Pocínováním ea drdty apoja do tvaru fólie, ktorá sa 3alej postupné žíhá pri teplotách od 500 do 900 °C po dobu 15 minút až 1 hodiny pre vytvorenie supravodivej niób-cínovej fázy v difúznej vrstvě.Foil-shaped niobium tin superconductor. The niobium meshes coated with a 20 psi diameter in a foil-shaped configuration according to FIG. la is started by passing through a tin bath at a temperature of up to 300 ° C. By tinning and drilling the apoj into a foil which is subsequently annealed at temperatures from 500 to 900 ° C for 15 minutes to 1 hour to form the superconducting niobium tin phase in the diffusion layer.
Příklad 2Example 2
Pre vytvorenie vanád-gáliového supravodiče kruhového tvaru podlá obr. lb sa použijú vanádiové drdty priemeru 30 jmi pokryté zliatinou médi s 3 hmotnostnými percentami gália. Vanádiové drdty pokryté uvedenou zliatinou médi sa prechodom cez gáliový kúpel* s teplotou do 200 °C pokryje gáliom a spoja do kruhového tvaru. V kruhovom tvare se vodič postupné žíhá pre vytvorenie supravodivej vanád-gáliovej fázy pri teplotách od 500 do 900 °C po dobu 15 minút až 1 hodiny.To form a vanadium-gallium superconductor of circular shape according to FIG. 1b, 30 µm vanadium drd coated with alloy medium with 3 weight percent gallium are used. The vanadium debris coated with said media alloy is coated with gallium by passing through a gallium bath * at a temperature of up to 200 ° C and joined in a circular shape. In a circular shape, the conductor is annealed in succession to form a superconducting vanadium-gallium phase at temperatures from 500 to 900 ° C for 15 minutes to 1 hour.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS11673A CS197384B1 (en) | 1973-01-05 | 1973-01-05 | Filler for making the superconductors with the betawolframe phase |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS11673A CS197384B1 (en) | 1973-01-05 | 1973-01-05 | Filler for making the superconductors with the betawolframe phase |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CS197384B1 true CS197384B1 (en) | 1980-05-30 |
Family
ID=5332740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS11673A CS197384B1 (en) | 1973-01-05 | 1973-01-05 | Filler for making the superconductors with the betawolframe phase |
Country Status (1)
| Country | Link |
|---|---|
| CS (1) | CS197384B1 (en) |
-
1973
- 1973-01-05 CS CS11673A patent/CS197384B1/en unknown
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