CN88100549A - Cathode arc source ion implantation technique and equipment - Google Patents
Cathode arc source ion implantation technique and equipment Download PDFInfo
- Publication number
- CN88100549A CN88100549A CN88100549.5A CN88100549A CN88100549A CN 88100549 A CN88100549 A CN 88100549A CN 88100549 A CN88100549 A CN 88100549A CN 88100549 A CN88100549 A CN 88100549A
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- China
- Prior art keywords
- workpiece
- arc
- ion
- source
- ion implantation
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 title claims description 9
- 238000005516 engineering process Methods 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 8
- 230000008595 infiltration Effects 0.000 claims abstract description 6
- 238000001764 infiltration Methods 0.000 claims abstract description 6
- 230000008020 evaporation Effects 0.000 claims abstract description 3
- 238000001704 evaporation Methods 0.000 claims abstract description 3
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000010891 electric arc Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 5
- 239000010936 titanium Substances 0.000 abstract description 5
- 229910052719 titanium Inorganic materials 0.000 abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 229910052804 chromium Inorganic materials 0.000 abstract description 2
- 239000011651 chromium Substances 0.000 abstract description 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 2
- 239000011733 molybdenum Substances 0.000 abstract description 2
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- 229910052758 niobium Inorganic materials 0.000 abstract description 2
- 239000010955 niobium Substances 0.000 abstract description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 229910052715 tantalum Inorganic materials 0.000 abstract description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052721 tungsten Inorganic materials 0.000 abstract description 2
- 239000010937 tungsten Substances 0.000 abstract description 2
- 229910052726 zirconium Inorganic materials 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
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Abstract
The present invention is that a kind of subatmospheric arc plasma that utilizes infiltrates element-specific to metal works, to optimize the technology and equipment of workpiece surface performance.Evaporation source, ionization source and heating source when it adopts cathode arc evaporator as ion implantation, produce the high-density metal ionic current, simultaneously workpiece is applied high negative bias, quicken to arrive workpiece to attract metal ion stream, workpiece is heated to high temperature, and ion infiltrates its surface.As obtaining the compound cementation coating of metal infiltration layer such as tungsten, molybdenum, nickel, chromium, titanium, aluminium, zirconium, tantalum, niobium and they and carbon, nitrogen, oxygen, improve metallic cementation efficient and quality.
Description
The present invention utilizes subatmospheric arc light plasma that workpiece is infiltrated element-specific, forms the metallic cementation layer, and to optimize the technology of workpiece surface performance, equipment of the present invention promptly is the tooling of realizing this technology.
At present, in implantation technique, it is diversified that the mode of metal ion stream is provided both at home and abroad, and the patented technology " plasma surface metallurgic method and apparatus " of the Xu Chong of TaiYuan Industry University application is exactly a kind of relatively otherwise effective technique wherein.
The application number of this patent: 85 1 02057
This is a kind of bilayer or multilayer metallic glow ion cementation technology of utilizing the hot sputter source electrode of glow discharge that metal ion stream is provided, but because the current density during glow discharge is little, and sputter rate is low, the metal ionization probability is little, so its metallic cementation speed is lower.For example,, oozed three hours in the time of 1100 ℃ oozing titanium elements in the soft steel with this technology, its depth of penetration is 155 μ m.
Task of the present invention is: a kind of technology and equipment that can produce the high-density ionic current in the metallic cementation process is provided, and the energy density when arriving processed workpiece in order to increase metal ion improves metallic cementation speed, and increases the bonding force of high temperature deposition layer.So that in suitability for industrialized production, improve metallic cementation efficient and quality.
Main points of the present invention are that it is to adopt evaporation source, ionization source and the heating source of cathode arc evaporator (14) when making ion implantation, utilize the subatmospheric arc discharge to produce the high desnity metal ionic current, simultaneously workpiece (10) is improved negative bias, improve the energy that metal ion arrives workpiece (10), processed workpiece (10) surface is formed the technology of infiltration layer with this.
Apparatus characteristic of the present invention is that one or more cathode arc evaporators (14) are housed, and the equipment that is combined to form of support (1), mechanical pump (2), diffusion pump (3), chassis (4), vacuum chamber (5), viewing window (6), negative bias power supply (7), cathode fixture (8), insulating sealer (9) (13), diffuser (11), source electrode target (12), arc source current (15), arc electrode devices such as (16) of configuration proper amt.
Below, accompanying drawings technical characterictic of the present invention and structure.
Accompanying drawing is the structural representation of cathode arc source ion metallizing device.
Among the figure: 1, support, 2, mechanical pump, 3, diffusion pump, 4, chassis, 5, vacuum chamber, 6, viewing window, 7, negative bias power supply, 8, cathode fixture, 9, insulating sealer, 10, processed workpiece, 11, diffuser, 12, the source electrode target, 13, insulating sealer, 14, cathode arc evaporator, 15, the arc source current, 16, arc electrode.
Carry out metallic cementation when work, at first vacuum chamber (5) is evacuated to high vacuum by mechanical pump (2) and diffusion pump (3) after, diffuser (11) is imported argon gas again to vacuum chamber (5) in, make the interior operating air pressure of vacuum chamber (5) remain on 10
-5～10
-1The scope of torr.Processed workpiece (10) is placed on the cathode fixture (8), and cathode fixture (8) joins with the negative pole of negative bias power supply (7).During work, arc electrode (16) arc light that ignites, by field emission mechanism, launch the high-density electronics by cathode arc evaporator (14), arc discharge voltage value scope 16～30V, discharging current scope 50～200A is at this moment on cathode arc evaporator (14), be used to provide source electrode target (12) surface of desiring the metallic cementation element and produce the differential of the arc of pacing up and down rapidly, each differential of the arc current density reaches 10
5A/cm
2More than, the atoms metal that evaporates from target (12) is ionized rapidly simultaneously, and ionization probability reaches 60～90%, has promptly produced highdensity ionic current.Negative bias power supply this moment (7) adds 500～2000V negative bias to processed workpiece (10), makes metal ion quicken to arrive workpiece, and workpiece (10) is heated rapidly, and operating temperature range is 800～1400 ℃, and density is up to 3～15mA/cm
2Ionic current make workpiece (10) produce lattice defect, metal ion mixes workpiece (10) soon.Soft steel is oozed titanium is example, oozes 20 minutes when 1100 ℃ temperature, and workpiece (10) surface is oozed titanium layer and just can be reached more than the 70 μ m.
Cathode arc evaporator (14) produces field emission, it is in the water cooling state again simultaneously, like this, source electrode target (12) surface that the desire metallic cementation is made does not form the molten bath, remain solid-state, therefore, can a plurality of cathode arc evaporators (14) be installed on the different positions in the vacuum chamber (5), simultaneously a plurality of workpiece (10) be carried out metallic cementation.
Plasma body implantation technique of the present invention, metallic cementation speed height, its device structure is simple, technological operation is easy, is easy to control the metallic cementation composition of layer, again can be simultaneously to a plurality of workpiece (10) metallic cementation, so this technology implementation is when suitability for industrialized production, production efficiency is than higher.The technology of the present invention and equipment can obtain pure metal infiltration layer or alloyed layer or compound infiltration layer or cementation coating or high temperature deposition layer, as obtaining the pure metal infiltration layer or the alloyed layer of elements such as tungsten, molybdenum, nickel, chromium, titanium, aluminium, zirconium, tantalum, niobium, and the compound cementation coating of they and carbon or nitrogen or oxygen, easier acquisition multilayer cementation coating.In order to the solidity to corrosion that improves workpiece, thermotolerance, wear resistance etc., in the life-span of improving workpiece, after can handling through metallic cementation with the ordinary metallic material surface, replace expensive high alloy material.
Claims (7)
1, under the vacuum high-temperature state, workpiece (10) is carried out the technology and equipment of plasma body metallic cementation:
1. its technical characterictic is to adopt evaporation source, ionization source and the heating source of cathode arc evaporator (14) when making ion implantation, utilize the subatmospheric arc discharge to produce the high desnity metal ionic current, simultaneously workpiece (10) is improved negative bias, improve the energy that metal ion arrives workpiece (10), processed workpiece (10) surface is formed the technology of infiltration layer with this;
2. its apparatus characteristic is that one or more cathode arc evaporators (14) are housed, and disposes the equipment that is combined to form of an amount of support (1), mechanical pump (2), diffusion pump (3), chassis (4), vacuum chamber (5), viewing window (6), negative bias power supply (7), cathode fixture (8), insulating sealer (9) (13), diffuser (11), source electrode target (12), arc source current (15), arc electrode devices such as (16).
2, ion implantation technique according to claim 1 is characterized in that cathode arc evaporator (14) is in the water cooling state when work, and it produces the arc discharge of subatmospheric field emission type, and voltage range is 16～30V, discharging current scope 50～200A.
3, ion implantation technique according to claim 2 is characterized in that the work negative bias scope 500～2000V of workpiece (10), 800～1400 ℃ of operating temperature ranges.
4, ion implantation technique according to claim 3 is characterized in that the operating air pressure scope of vacuum chamber is 10
-5～10
-1Torr.
5, ion metallizing device according to claim 4 is characterized in that cathode arc evaporator (14) is magnet controlled or Pneumatic-control type.
6, ion metallizing device according to claim 5 is characterized in that the arc source current is a single flow, negative bias power supply (7) be single flow or pulsed.
7, ion metallizing device according to claim 6, the shape that it is characterized in that vacuum chamber (5) is box-shaped or tubular or spheric, its structure be the chamber, separate room or multi-chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 88100549 CN1015003B (en) | 1988-02-11 | 1988-02-11 | Technology and apparatus for permeating metals with ions by using a cathod arc source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 88100549 CN1015003B (en) | 1988-02-11 | 1988-02-11 | Technology and apparatus for permeating metals with ions by using a cathod arc source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN88100549A true CN88100549A (en) | 1988-08-03 |
| CN1015003B CN1015003B (en) | 1991-12-04 |
Family
ID=4831396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 88100549 Expired CN1015003B (en) | 1988-02-11 | 1988-02-11 | Technology and apparatus for permeating metals with ions by using a cathod arc source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1015003B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1057347C (en) * | 1996-12-13 | 2000-10-11 | 沈阳工业高等专科学校 | Method for prepn. of multi-arc ion sputtering alloy coatings |
| CN105256272A (en) * | 2014-07-16 | 2016-01-20 | 中国科学院金属研究所 | Preparation method for microcrystal aluminide coating |
| CN106609351A (en) * | 2015-10-21 | 2017-05-03 | 南京理工大学 | Preparation method of nitrogen-doped titanium dioxide thin film |
| CN110230082A (en) * | 2019-07-18 | 2019-09-13 | 烟台大学 | A kind of boundling cathode micro arc oxidation membrane preparation device and method |
-
1988
- 1988-02-11 CN CN 88100549 patent/CN1015003B/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1057347C (en) * | 1996-12-13 | 2000-10-11 | 沈阳工业高等专科学校 | Method for prepn. of multi-arc ion sputtering alloy coatings |
| CN105256272A (en) * | 2014-07-16 | 2016-01-20 | 中国科学院金属研究所 | Preparation method for microcrystal aluminide coating |
| CN106609351A (en) * | 2015-10-21 | 2017-05-03 | 南京理工大学 | Preparation method of nitrogen-doped titanium dioxide thin film |
| CN110230082A (en) * | 2019-07-18 | 2019-09-13 | 烟台大学 | A kind of boundling cathode micro arc oxidation membrane preparation device and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1015003B (en) | 1991-12-04 |
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