CN1015003B - Technology and apparatus for permeating metals with ions by using a cathod arc source - Google Patents
Technology and apparatus for permeating metals with ions by using a cathod arc sourceInfo
- Publication number
- CN1015003B CN1015003B CN 88100549 CN88100549A CN1015003B CN 1015003 B CN1015003 B CN 1015003B CN 88100549 CN88100549 CN 88100549 CN 88100549 A CN88100549 A CN 88100549A CN 1015003 B CN1015003 B CN 1015003B
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Abstract
The present invention relates to a technique and an appliance for permeating a particular element into a metal work piece by a low pressure arc light plasma body so as to optimize the performance of the surface of the work piece. The present invention adopts a cathode arc evaporator as an evaporator source, an ionizing source and a heating source in the ion permeation of metal, and a high density metal ion stream is generated. Simultaneously, high negative bias is applied on the work piece so as to attract the metal ion stream to arrive at the work piece in an accelerating mode, the work piece is heated to high temperature, and ions permeate into the surface of the work piece. For example, the permeating layers of the metal, such as wolfram, molybdenum, nickel, chromium, titanium, aluminum, zirconium, tantalum, niobium, etc., and the permeation plating layers of the compounds of the metal, carbon, nitrogen and oxygen can be obtained, and the efficiency and the quality of the permeation of the metal are enhanced.
Description
The present invention utilizes subatmospheric arc light plasma that workpiece is infiltrated element-specific, forms the metallic cementation layer, and to optimize the technology of workpiece surface performance, equipment of the present invention promptly is the tooling of realizing this technology.
At present, in implantation technique, it is diversified that the mode of metal ion stream is provided both at home and abroad, and the patented technology " plasma surface metallurgic method and apparatus " of the Xu Chong of TaiYuan Industry University application is exactly a kind of relatively otherwise effective technique wherein.
The application number of this patent: 85102057
This is a kind of bilayer or multilayer metallic glow ion cementation technology of utilizing the hot sputter source electrode of glow discharge that metal ion stream is provided, but because the current density during glow discharge is little, and sputter rate is low, the metal ionization probability is little, so its metallic cementation speed is lower.For example,, oozed three hours in the time of 1100 ℃ oozing titanium elements in the soft steel with this technology, its depth of penetration is 155 μ m.
Task of the present invention is: a kind of technology and equipment that can produce the high-density ionic current in the metallic cementation process is provided, and the energy density when arriving processed workpiece in order to increase metal ion improves metallic cementation speed, and increases the bonding force of high temperature deposition layer.So that in suitability for industrialized production, improve metallic cementation efficient and quality.
Main points of the present invention are that it is to adopt evaporation source, ionization source and the heating source of cathode arc evaporator (14) when making ion implantation, utilize the subatmospheric arc discharge to produce the high desnity metal ionic current, simultaneously workpiece (10) is improved negative bias, improve the energy that metal ion arrives workpiece (10), processed workpiece (10) surface is formed the technology of infiltration layer with this.
Apparatus characteristic of the present invention is that one or more cathode arc evaporators (14) are housed, and the equipment that is combined to form of support (1), mechanical pump (2), diffusion pump (3), chassis (4), vacuum chamber (5), viewing window (6), negative bias power supply (7), cathode fixture (8), insulating sealer (9) (13), diffuser (11), source electrode target (12), arc source current (15), arc electrode devices such as (16) of configuration proper amt.
Below, accompanying drawings technical characterictic of the present invention and structure.
Accompanying drawing is the structural representation of cathode arc source ion metallizing device.
Among the figure: 1, support, 2, mechanical pump, 3, diffusion pump, 4, chassis, 5, vacuum chamber, 6, viewing window, 7, negative bias power supply, 8, cathode fixture, 9, insulating sealer, 10, processed workpiece, 11, diffuser, 12, the source electrode target, 13, insulating sealer, 14, cathode arc evaporator, 15, the arc source current, 16, arc electrode.
When carrying out the metallic cementation workpiece, after at first vacuum chamber (5) being evacuated to high vacuum by mechanical pump (2) and diffusion pump (3), diffuser (11) is input argon gas in vacuum chamber (5) again, makes the interior operating air pressure of vacuum chamber (5) remain on 0.00133322-13.3322 pascal's scope.Processed workpiece (10) is placed on the cathode fixture (8), and cathode fixture (8) joins with the negative pole of negative bias power supply (7).During work, arc electrode (16) arc light that ignites, by field emission mechanism, launch the high-density electronics by cathode arc evaporator (14), arc discharge voltage value scope 16～30V, discharging current scope 50～200A is at this moment on cathode arc evaporator (14), be used to provide source electrode target (12) surface of desiring the metallic cementation element and produce the differential of the arc of pacing up and down rapidly, each differential of the arc current density reaches 10
5A/cm
2More than, the atoms metal that evaporates from target (12) is ionized rapidly simultaneously, and ionization probability reaches 60～90%, has promptly produced highdensity ionic current.Negative bias power supply this moment (7) adds 500～2000V negative bias to processed workpiece (10), makes metal ion quicken to arrive workpiece, and workpiece (10) is heated rapidly, and operating temperature range is 800～1400 ℃, and density is up to 3～15mA/cm
2Ionic current make workpiece (10) produce lattice defect, metal ion mixes workpiece (10) soon.Soft steel is oozed titanium is example, oozes 20 minutes when 1100 ℃ temperature, and workpiece (10) surface is oozed titanium layer and just can be reached more than the 70 μ m.
Cathode arc evaporator (14) produces field emission, it is in the water cooling state again simultaneously, like this, source electrode target (12) surface that the desire metallic cementation is made does not form the molten bath, remain solid-state, therefore, can a plurality of cathode arc evaporators (14) be installed on the different positions in the vacuum chamber (5), simultaneously a plurality of workpiece (10) be carried out metallic cementation.
Plasma body implantation technique of the present invention, metallic cementation speed height, its device structure is simple, technological operation is easy, is easy to control the metallic cementation composition of layer, again can be simultaneously to a plurality of workpiece (10) metallic cementation, so this technology implementation is when suitability for industrialized production, production efficiency is than higher.The technology of the present invention and equipment can obtain pure metal infiltration layer or alloyed layer or compound infiltration layer or cementation coating or high temperature deposition layer, as obtaining the pure metal infiltration layer or the alloyed layer of elements such as tungsten, molybdenum, nickel, chromium, titanium, aluminium, zirconium, tantalum, niobium, and the compound cementation coating of they and carbon or nitrogen or oxygen, easier acquisition multilayer cementation coating.In order to the solidity to corrosion that improves workpiece, thermotolerance, wear resistance etc., in the life-span of improving workpiece, after can handling through metallic cementation with the ordinary metallic material surface, replace expensive high alloy material.
Claims (2)
1, under the vacuum high-temperature state, workpiece (10) is carried out the technology of plasma surface alloying, it is characterized in that: adopt the evaporation source of cathode arc evaporator (14) when making ion implantation, ionization source and heating source, utilize the subatmospheric arc discharge to produce the high desnity metal ionic current, cathode arc evaporator (14) is in the water cooling state when work, it produces the arc discharge of subatmospheric field emission type, voltage range is 16～30V, the discharging current scope is 50～200A, simultaneously workpiece (10) is improved negative bias, make its work negative bias scope in 500～2000V, 800～1400 ℃ of operating temperature ranges, improve the energy that metal ion arrives workpiece (10), the operating air pressure scope of vacuum chamber is 0.00133322-13.3322 pascal, with this processed workpiece (10) surface is formed infiltration layer.
2, under the vacuum high-temperature state, workpiece (10) is carried out the equipment of plasma surface alloying, it is characterized in that: one or more cathode arc evaporators (14) are housed, and dispose an amount of support (1), mechanical pump (2), diffusion pump (3), chassis (4), vacuum chamber (5), viewing window (6), negative bias potential source (7), cathode fixture (8), insulating sealer (9), (13), diffuser (11), source electrode target (12), arc source current (15), arc electrode devices such as (16) are combined to form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 88100549 CN1015003B (en) | 1988-02-11 | 1988-02-11 | Technology and apparatus for permeating metals with ions by using a cathod arc source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 88100549 CN1015003B (en) | 1988-02-11 | 1988-02-11 | Technology and apparatus for permeating metals with ions by using a cathod arc source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN88100549A CN88100549A (en) | 1988-08-03 |
| CN1015003B true CN1015003B (en) | 1991-12-04 |
Family
ID=4831396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 88100549 Expired CN1015003B (en) | 1988-02-11 | 1988-02-11 | Technology and apparatus for permeating metals with ions by using a cathod arc source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1015003B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1057347C (en) * | 1996-12-13 | 2000-10-11 | 沈阳工业高等专科学校 | Method for prepn. of multi-arc ion sputtering alloy coatings |
| CN105256272A (en) * | 2014-07-16 | 2016-01-20 | 中国科学院金属研究所 | Preparation method for microcrystal aluminide coating |
| CN106609351A (en) * | 2015-10-21 | 2017-05-03 | 南京理工大学 | Preparation method of nitrogen-doped titanium dioxide thin film |
| CN110230082B (en) * | 2019-07-18 | 2021-06-25 | 烟台大学 | Device and method for preparing cluster cathode micro-arc oxidation film |
-
1988
- 1988-02-11 CN CN 88100549 patent/CN1015003B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CN88100549A (en) | 1988-08-03 |
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