CN87102044A - A kind of chip holder of semiconductor silicon element - Google Patents
A kind of chip holder of semiconductor silicon element Download PDFInfo
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- CN87102044A CN87102044A CN87102044.0A CN87102044A CN87102044A CN 87102044 A CN87102044 A CN 87102044A CN 87102044 A CN87102044 A CN 87102044A CN 87102044 A CN87102044 A CN 87102044A
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- China
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- silicon
- chip holder
- chip
- polysilicon
- semiconductor silicon
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Abstract
A kind of chip holder of semiconductor silicon element.It is to mix 0.20～0.50% element boron in polysilicon or specific monocrystalline silicon, the P type polysilicon chip of 0.08～0.30% Titanium preparation.Have forr a short time than molybdenum thermal expansion, good with aluminum viscosity, surface treatment is easy, the characteristics that physicochemical property is stable.The silicon cell pressure drop of doing the chip holder making with it is low, rate of finished products and grade qualification rate height, and can simplify the element production technology.The chip holder that can be used as other silicon cells such as high power semi-conductor silicon force device and fast diode.
Description
The present invention relates to semiconductor device.
At present, the semiconductor silicon force device adopts molybdenum sheet as chip holder more.But the thermal coefficient of expansion of molybdenum and silicon differs bigger, and molybdenum is about 5 * 10
-6℃
-1, silicon only is 3～4 * 10
-6℃
-1, when the sintering of tube core or welding,, easily cause tube core to be out of shape because silicon is different with the shrinkage of supporting mass molybdenum sheet, even chip rupture; When sintering process was made tube core, the aluminium foil that adds between silicon and molybdenum sheet can form MoSi with molybdenum
2, its resistance is 4 times of molybdenum, and thermal coefficient of expansion is 1.5 times of molybdenum, and this causes the tube core pressure drop to increase, and junction temperature raises, and the sticking lubricant nature between silicon and the supporting mass molybdenum sheet is worsened.The measured data of dissecting the silicon force device shows that the sticking profit area great majority between the molybdenum silicon are about 80%; Molybdenum sheet at high temperature can produce oxidation, causes the tube core pressure drop to increase, and the element rate of finished products reduces; Because powder metallurgy molybdenum base is after rolling, there are certain crackle tissue and anisotropy, when being processed into molybdenum sheet, easily crackle occurring, even layering occurs at fracture towards circle, become ellipse after may making the disk sintering, for reducing distortion, have to increase molybdenum sheet thickness, this is waste material not only, increase cost, also increased the pressure drop of tube core; During the tube core sintering, at high temperature there is phenomenon of deflation in molybdenum sheet, can influence sintering effect.In addition, during molybdenum sheet nickel plating, temperature required higher, coating easily comes off; Because the character such as hardness of molybdenum and silicon differ greatly, the moulding processing of tube core is had difficulties, metal filings also may stain table top, in the time of seriously even cause the tube core short circuit.
The tube core that above-mentioned all factors all may cause making is scrapped.Given this, at present making supporting mass with molybdenum sheet, to make the rate of finished products of semiconductor silicon force device not high.In recent years, the someone studies with the tungsten sheet and replaces molybdenum sheet.But the tungsten sheet also exists thermal coefficient of expansion and the inconsistent problem of silicon, and exists hardness bigger, and processing and moulding are more difficult, easy to crack, problems such as cost height.
The objective of the invention is to overcome above-mentioned weak point in the prior art, provide a kind of close with the silicon thermal coefficient of expansion, conduct electricity, indeformable, do not exit, be easy to processing and manufacturing, to be stained with lubricant nature good with aluminium foil, pressure drop is lower, the chip holder of the semiconductor silicon element that the subsequent treatment processing characteristics after the moulding is consistent with chip.
Silicon supporting mass of the present invention is a kind of P type polysilicon chip that mixes additive preparation such as boron, titanium in polysilicon or specific monocrystalline silicon.
The present invention adopts three grades of product polysilicons, or the material end to end of p type single crystal silicon, or resistivity is raw material greater than the material end to end of the n type single crystal silicon of 10 ohmcms, raw material is done the surface to be cleaned, after processing is given in chemical corrosions etc., by the weight that feeds intake, the additive element boron of adding 0.20～0.50%, element boron purity is 99.50～99.99%, the auxiliary additive Titanium of adding 0.08～0.30%, Titanium purity is 99.50～99.90%, auxiliary additive can also be metal zirconium or metallic cobalt, in single crystal growing furnace, prepare P type polysilicon with Czochralski method or directional crystallization method.
When preparing polysilicon, be crystal seed greater than the basic boron of 50 ohmcms and the reducing polysilicon of basic phosphorus with resistivity with Czochralski method, the solid-state temperature gradient of control polycrystalline is 100～150 ℃/centimetre, the crystal rotary speed is 30～50 rev/mins, the melt rotary speed is 6～10 rev/mins, pull rate is from 1 millimeter/minute speed change to 0.6 millimeter/minute gradually, and adopt the way that directly expands shoulder, draw polycrystalline silicon rod by giving fixed diameter.The polysilicon bar blank that makes, the Roll circle is to required diameter again, and section is then ground, and polishing promptly becomes the chip holder of semiconductor silicon element of the present invention.
The physical property of the molybdenum sheet that uses in polysilicon chip that the method for the invention is made and the prior art has been carried out contrast test, and it the results are shown in table 1.
Table 1
| Test event | Polysilicon chip | Molybdenum sheet |
| Density (25 ℃ time) gram per centimeter 3 | 2.33 | 10.2 |
| Resistivity (25 ℃ time) ohmcm | 1～5×10 -4 | 5×10 -6 |
| Thermal coefficient of expansion (25～300 ℃ time) 10 －6℃ －1 | 3.60 | 5.35 |
| Thermal conductivity ＊ Watt/centimetre degree | 1.5 | 1.4 |
| Compression strength kilogram/millimeter 2 | 60～80 | / |
* this item number is repaiied first-class according to selecting from the meal field: " physics is used numerical table always ", Science Press published in 1979.
Make the silicon cell that the semiconductor silicon element chip holder makes with the present invention and have significant superiority.With screw bolt-type ZP-200 element is example, and it can continue to use the existing manufacture craft of making supporting mass with molybdenum sheet, after the nickel plating of polysilicon chip secondary and warding off tin, makes silicon cell with welding.The element of making is compared with the element made from molybdenum sheet, and peak voltage drop on average reduces by 0.1 volt; The element grade qualification rate rises to 100%(and improves more than 30%).And polysilicon chip nickel plating is lower than the alloying temperature of molybdenum sheet nickel plating, and the time is short, and coating is firm.Making plate ZP-1600 silicon cell with polysilicon chip again is example, and it and silicon sinter tube core into, after carrying out evaporation of aluminum or steaming gold, element is carried out dynamic test, its normal temperature characteristic is depressed in same electrical, average drain currents for molybdenum sheet do supporting mass element 22～67%; Its hot properties under close voltage, does not oppositely repeat average drain currents and is that molybdenum sheet makes the supporting mass element 50%～61%, oppositely repeats average drain currents and be that molybdenum sheet makes the supporting mass element 50～67%.And aluminium is better than the sticking lubricant nature of aluminium and molybdenum with the sticking lubricant nature of silicon, thereby makes when adopting molybdenum sheet, and the restive production technology problem of sintering process has obtained solution.
Polysilicon chip of the present invention is close with the silicon physicochemical property, thereby the production process of silicon cell can be simplified, element tube wicking surface moulding handling ease, almost there is not metallic pollution, in addition, because the density of polysilicon chip is little more many than the density of molybdenum sheet, so can alleviate the weight of silicon cell, and its monolithic price is more much lower than molybdenum sheet, can reduce the cost of silicon cell.
When the present invention is used as the chip holder of large-power semiconductor silicon force device, superiority will be more obvious.
The present invention can also be used as other semiconductor silicon element, as: the chip holder of fast diode etc.
Embodiment 1, for making the chip holder of ZP-200 screw bolt-type silicon rectifier cell.With resistivity is that the p type single crystal silicon of 50 ohmcms expects to be raw material end to end, feed intake 1 kilogram, add 2.5 gram element borons, 0.8 gram Titanium, in single crystal growing furnace, is crystal seed with resistivity greater than the reducing polysilicon of the basic boron of 50 ohmcms, basic phosphorus, the solid-state temperature gradient of control polysilicon is 100 ℃/centimetre, the crystal rotary speed is 30 rev/mins, the melt rotary speed is 6 rev/mins, pull rate is from 1.0 millimeters/minute speed changes to 0.6 millimeter/minute gradually, and adopts the polycrystalline rod blank of 30 millimeters of way drawing φ that directly expand shoulder.Then with this polycrystalline rod blank after Roll circle, section, grinding, make the last substrate of 20 * 1.2 millimeters specifications of φ and the subtegulum of 26 * 2 millimeters specifications of φ.By original technology of making supporting mass with molybdenum sheet, after secondary nickel plating and warding off tin, make ZP-200 screw bolt-type silicon rectifier cell with welding, its performance test data is as follows: the pressure drop of cold conditions temperature-sensitive is 200～220mV, hot temperature-sensitive pressure drop is 140mV, forward voltage drop is 0.54～0.58V, and the reverse characteristic in the time of+140 ℃ is 800～1000V/1.8～2.0mA.
Embodiment 2, for making the plate silicon rectifier cell chip holder of ZP-1600.With three level polysilicons is raw material, feed intake 2.5 kilograms, add 7 gram element borons, 3 gram Titaniums are except that pull rate is slow slightly, adopt the vertical pulling technology identical with embodiment 1, the polycrystalline silicon rod ， that is drawn into 80 millimeters of φ makes the polysilicon chip of 70 * 3.5 millimeters of φ after Roll circle, section, grinding, make tube core with sintering process, be assembled into the plate silicon rectifier cell of ZP-1600, its performance test data is exemplified below: (1) element one: normal temperature characteristic (U
R/ IR) 3800V/0.04mA; Hot properties 1(U
RSM/ I
RSM) 3810V/16mA; Hot properties 2(U
RRM/ I
RRM) 3353V/15mA; Peak current (I
TM) 5053A; Crest voltage (U
TM) 1.904V.(2) element two: normal temperature characteristic 3800V/0.06mA; Hot properties 1,3802V/21mA; Hot properties 2,3502V/20mA; Peak current 4980A; Crest voltage 2.111V.
Claims (4)
1, a kind of chip holder of semiconductor silicon element, it in the form of sheets, adopt sintering or welding procedure and chip to join together, constitute tube core, it is characterized in that described chip holder is to have added 0.20～0.50% additive element boron, the P type polysilicon chip of 0.08～0.30% auxiliary additive Titanium.
2, by the described chip holder of claim 1, it is characterized in that described auxiliary additive can also be a metal zirconium, or metallic cobalt.
3, by the described chip holder of claim 1, it is characterized in that it is with three grades of product polysilicons, or p type single crystal silicon expects end to end, or resistivity is raw material greater than the material end to end of the n type single crystal silicon of 10 ohmcms, behind the blast blending, with Czochralski method or directional crystallization method preparation and process from strand.
4, by claim 1 and 2 described polysilicon chips, mainly be to replace metal molybdenum sheet or tungsten sheet, as the chip holder of 200 peaces and above semiconductor silicon force device thereof, can also be as the chip holder of other semiconductor silicon element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN87102044.0A CN1004592B (en) | 1987-06-23 | 1987-06-23 | Chip holder for semiconductor silicon element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN87102044.0A CN1004592B (en) | 1987-06-23 | 1987-06-23 | Chip holder for semiconductor silicon element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN87102044A true CN87102044A (en) | 1988-05-25 |
| CN1004592B CN1004592B (en) | 1989-06-21 |
Family
ID=4813754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN87102044.0A Expired CN1004592B (en) | 1987-06-23 | 1987-06-23 | Chip holder for semiconductor silicon element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1004592B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101167163A (en) * | 2005-03-03 | 2008-04-23 | 统合材料股份有限公司 | Baffle wafers and randomly oriented polycrystallin silicon used therefor |
-
1987
- 1987-06-23 CN CN87102044.0A patent/CN1004592B/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101167163A (en) * | 2005-03-03 | 2008-04-23 | 统合材料股份有限公司 | Baffle wafers and randomly oriented polycrystallin silicon used therefor |
| CN101167163B (en) * | 2005-03-03 | 2013-07-10 | 磁性流体技术(美国)集团公司 | Baffle wafers and randomly oriented polycrystallin silicon used therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1004592B (en) | 1989-06-21 |
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