CN87100973A - The manufacture method of semiconductor device - Google Patents
The manufacture method of semiconductor device Download PDFInfo
- Publication number
- CN87100973A CN87100973A CN87100973.0A CN87100973A CN87100973A CN 87100973 A CN87100973 A CN 87100973A CN 87100973 A CN87100973 A CN 87100973A CN 87100973 A CN87100973 A CN 87100973A
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- China
- Prior art keywords
- electrode
- aluminum
- bonding pad
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- etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Weting (AREA)
Abstract
The present invention is the manufacture method that is provided with on semiconductor chip by the semiconductor device of formed electrode of aluminum or aluminum alloy or bonding pad, after forming aluminium film or aluminium alloy film on the above-mentioned semiconductor chip, before heat treatment step, with above-mentioned by formed electrode of aluminum or aluminum alloy or bonding pad surface, give etching with etching solution, make its surface roughening equably, it is characterized by if before heat treatment, carry out above-mentioned surface treatment, then can not only prevent the variable color of aluminium electrode surface, and the even etching in surface can be made its roughening, so when carrying out bonding, can increase substantially the identity of electrode part to pattern with the automatic lead coupling device.And can determine the electrode part branch center, to determine the tram of bonding pad.
Description
The present invention relates to the manufacture method of semiconductor device, about when the enterprising line lead bonding of semiconductor wafer, is the identity that improves electrode or bonding pad especially, and the method that electrode or bonding pad surface are handled.
The present invention is for improving the pattern identity of (when carrying out wire bond by the automatic lead coupling device) semiconductor die plate electrode, on semiconductor chip, be provided with in the operation by electrode that aluminum or aluminum alloy constituted or bonding, after finishing the deposit of aluminum or aluminum alloy on the above-mentioned semiconductor chip, and before heat treatment step, with the aqueous solution of hydrofluoric acid or ammonium fluoride or both etching solutions that mixed liquor made, become matsurface by the electrode that aluminum or aluminum alloy constituted or the Surface Machining of bonding pad with above-mentioned.
In the past, the automatic lead coupling device of semiconductor wafer, generally be that television camera with high multiple mirrors semiconductor wafer, and with this image double quantification, carry out image processing, be identified in the position of semiconductor wafer top electrode or bonding that bonding pad goes between, then wire bond carried out in its this position.In recent years, the method of this automatic lead combination, not only be applied to integrated circuit (IC) and large scale integrated circuit (LSI), and be applicable to compound semiconductor wafer, and the productivity ratio that improves semiconductor device is made a significant contribution as light-emitting diode (LED) class.
Be the explanation that the recognition principle of the electrode of automatic lead coupling device or bonding pad is done below.This explanation is to carry out the narration that the example of wire bond is done with LED wafer.
Shown in Fig. 3 (a), LED wafer (11) is with its electrode part (12) exposing surface, and is combined on the deckle board (14) with Ag glue (paste) (13) small pieces.The wire bond device is shown in Fig. 3 (b), illuminating lamp (16) is installed with tilted direction, workbench (15) facing to the deckle board (14) that LED wafer (11) are installed, and with powerful television camera (17) be installed on wafer (11) directly over, or near directly over the position, with entire wafer (11) as the image taking object.When the above-mentioned LED wafer (11) that is installed in the deckle board (14) is placed in the position that sets as above-mentioned mounting means, because the electrode of LED wafer (11) part (12) surface in addition all is level and smooth, so will see shown in Fig. 3 (b), the light of illuminating lamp (A) almost all reflects towards the direction opposite with incident direction (B), and can not inject the direction (C) of television camera (17).Yet,,, thereby can produce fine jog so its surface is made of many crystallizations because electrode part (12) normally uses aluminum or aluminum alloy made.Therefore at electrode surface, incident light will cause irregular reference, and the part of this random reflected light is with the direction (C) of directive television camera (17).With the image of the observed LED wafer (11) of television camera (17), shown in Fig. 3 (C), the surface of wafer (11) is dim, has only electrode part (12) to present very bright.As utilize above-mentioned difference that image is added double quantification, and just can only identify the electrode part (12) on the LED wafer (11) significantly, further carry out image processing then, obtain the center of electrode, to determine the position of lead-in wire bonding.
Yet, method according to above-mentioned automatic lead combination, carry out the identification of electrode or bonding pad, then the irregular reference rate on electrode or bonding pad (12) surface wants high, and the irregular reference rate is all wanting even between wafer (11) and in wafer (11), that is to say that coarse processing all will be carried out as its precondition in the surface of electrode or bonding pad (12).But as electrode or the bonding pad (12) of using the formed aluminum or aluminum alloy of sputtering method to constitute, then owing to the reasons such as condition of sputter, even and heat-treat, therefore the generation of its crystal grain does not seldom form concaveconvex shape substantially yet on above-mentioned electrode or bonding pad (12) surface.Thereby utilize above-mentioned automatic lead coupling device to discern electrode or bonding pad (12), the insufficient situation of irregular reference amount is then arranged.Therefore, the electrode or the bonding pad (12) that use the formed aluminum or aluminum alloy of sputtering method to constitute, to can not produce the identification pattern, or can not carry out wire bond well, and many overlap joint mistakes can take place at the core of electrode or bonding pad (12).Therefore,, be coarse shape, increasing the irregular reference amount, and consider to adopt its surperficial method of chemicals etching in order to make the electrode that constitutes by aluminum or aluminum alloy or the surface of bonding pad (12) at above-mentioned shortcoming.For example when chemicals such as use hydrochloric acid, nitric acid, phosphoric acid, caustic soda, then rate of etch is very big, and is difficult to control, simultaneously, can't obtain the uniformity in wafer, it is then very difficult only a small amount of etching uniformly to be carried out on the surface of electrode or bonding pad (12) as employing.
The present invention is the achievement of researching and developing in view of above-mentioned shortcoming, its purpose is to provide a kind of automatic lead coupling device with pattern recognition device to come when the electrode of semiconductor wafer is partly carried out wire bond, can carry out uniform etching, with the manufacture method of the semiconductor device of the pattern identity that improves electrode or bonding pad.
The etching solution that the present invention is used by the surface roughening of formed electrode of aluminum or aluminum alloy or bonding pad by the conducts such as the aqueous solution of discovering use hydrofluoric acid or ammonium fluoride, and before being heat-treated, electrode or bonding pad carry out etching, make the surface nondiscolouring of electrode or bonding pad, and present the surface of even roughness.
The invention provides a kind of manufacture method of semiconductor device, it is characterized by on semiconductor chip in the manufacture method that is provided with by the semiconductor device of formed electrode of aluminum or aluminum alloy or bonding pad, on above-mentioned semiconductor chip, carry out after the aluminum or aluminum alloy deposit, before heat treatment step, give etching by formed electrode of aluminum or aluminum alloy or bonding pad surface with etching solution with above-mentioned, make it become uniform matsurface.Etching solution described in the said method is the aqueous solution that is fit to adopt hydrofluoric acid easy water-soluble salt with it, uses the aqueous solution or their mixed liquor of hydrofluoric acid, ammonium fluoride then more suitable.When separately using hydrofluoric acid, best hydrofluoric content is 0.5～25%(weight ratio) and when using ammonium fluoride aqueous solution separately, then its content is 0.5～40%(weight ratio) for well.In order to make etching speed and good uniformity, then adopt the mixed liquor of hydrofluoric acid and ammonium fluoride aqueous solution even more ideal, hydrofluoric acid and the ammonium fluoride weight ratio of this moment are preferably 1: 1 to 1: 20.
In addition, in these etching solutions, except that etching solution, also can add the additives such as surfactant that are used for improving wetability arbitrarily.
As mentioned above, feature of the present invention is to form on semiconductor chip after aluminium film or the aluminium alloy film, before methods such as adopting photoetching is made pattern and heat-treated, carries out surface treatment with etching solution.The surface treatment of before heat treatment, as above stating like this, then can prevent the variable color of aluminium electrode surface, treatment state is also good, and can uniform etching make its surface roughening, so the electrode part that can increase substantially when carrying out wire bond with the automatic lead coupling device is divided the pattern identity.
In addition, also can adopt any mode to carry out wire bond, for example, can use modes such as nail head type hot binding or ultrasonic wave combination.
Below, the embodiment that present invention will be described in detail with reference to the accompanying.By present embodiment, the inventive method (being applicable to the electrode forming process that uses gallium phosphide (GaP) light-emitting diode) is described.
Fig. 1 a represents sectional view according to each manufacturing process of semiconductor device of the inventive method to 1f.
Fig. 2 a and 2b are illustrated respectively in prior art and the embodiments of the invention, electrode surface state after heat treatment.
Fig. 3 a, b, c are the principles in order to the automatic lead coupling device identification pattern of explanation prior art.
At first, as shown in Figure 1a, on the n-GaP substrate, make n-GaP(2 with liquid phase epitaxial method) then P-GaP(3) crystalline growth, form the P-n knot.Then, shown in Fig. 1 b, form gold silicon (Au-Si) alloy (4), and carry out heat-treating after pattern constitutes, form the resistance ohmic contact with photoetching process at n layer (back side).Secondly, shown in Fig. 1 c, form one deck for obtaining the needed golden beryllium of ohmic contact (Au-Be) alloy-layer (5) at P layer (superficial layer), and form barrier metal layer (6) in the above, then, form aluminium lamination (7) with sputtering method in the above.Secondly, this wafer being placed the hydrofluoric acid (concentration 5%) that keeps 20 ℃ of constant temperature get into bed with the etching solution that ammonium fluoride (concentration 40%) mixes with 1: 10 ratio soaked about 30 seconds.By above-mentioned processing, the surface of aluminium lamination (7) just shown in Fig. 1 d, evenly produce on its surface very trickle concavo-convex be rough surface.Then,, shown in Fig. 1 e, form pattern,, thereafter, in inert gas, heat-treat, form ohmic contact to make the electrode shape of defined with photoetching process with the wafer of aluminium lamination surface roughening.Through the electrode surface state after the above-mentioned heat treatment, as shown in Figure 2.Do not add the electrode of processing (Fig. 2 a) compares, and by the electrode (Fig. 2 b) that the inventive method is handled, finds out its grain boundary significantly, and this is that to make the grain boundary on aluminium lamination surface partly be subjected to optionally etching caused because of etching solution in the past.After this shown in Fig. 1 f, with slab method wafer is pressed certain specification and cut off, to manufacture LED wafer.Again above-mentioned made wafer is carried out small pieces and engage on deckle board, then carry out wire-bonded with the automatic lead coupling device again.At this moment original with not carrying out surface-treated LED wafer is compared, and the pattern identity of electrode greatly improves, and has reduced the mistake of wire-bonded, and the running of automatic lead coupling device is increased substantially.In addition, for electrical characteristics and other aspects without any harmful effect.In addition, shown in above-mentioned embodiment, feature of the present invention is after being to form aluminium film or aluminium alloy film on the semiconductor chip, and carries out carrying out surface treatment before photoetching formation pattern and the heat treatment.Therefore if after heat treatment, when handling, then on the aluminium electrode surface, will take place, and the state of handling is also inhomogeneous, and can't reaches purpose of the present invention owing to the caused variable color of etching inhomogeneities according to the present invention.
On the other hand, in the present invention, the etch amount used because of etching is very little, and its etching period is 30 seconds in the present embodiment, even flooding 5 minutes, also do not have very big variation for the etch amount, is approximately about 500A °.
In addition, in the present embodiment, be to be illustrated, but the present invention also can be suitable for other compound semiconductor device, also goes for the device of silicon substrate with the example that is applicable to the LED wafer of using gallium phosphide (GaP).
As mentioned above, if the manufacture method of semiconductor device according to the invention, has the automatic lead engagement device of sketch recognition device when the electrode of semiconductor wafer partly carries out wire-bonded in usefulness, the mistake of joint is reduced, and can greatly improve electric grade or the sketch recognition of bonding point that carries out wire bond.
Claims (2)
1, a kind of manufacture method of semiconductor device, be to adopt the manufacture method that on semiconductor chip, is provided with by the semiconductor device of formed electrode of aluminum or aluminum alloy or bonding pad, after it is characterized in that carrying out the deposit of aluminum or aluminum alloy on the described semiconductor chip, before heat treatment step, with above-mentioned by formed electrode of aluminum or aluminum alloy or bonding pad surface, carry out etching with etching solution, make it to become uniform rough surface.
2, the manufacture method of semiconductor device according to claim 1 is characterized in that used etching solution is the aqueous solution of hydrofluoric acid or ammonium fluoride, or is above-mentioned two kinds mixed liquor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61040946A JPS62196842A (en) | 1986-02-24 | 1986-02-24 | Manufacture of semiconductor device |
| JP40946/1986 | 1986-02-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN87100973A true CN87100973A (en) | 1987-09-02 |
| CN1007678B CN1007678B (en) | 1990-04-18 |
Family
ID=12594672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN87100973A Expired CN1007678B (en) | 1986-02-24 | 1987-02-24 | Process for preparing semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS62196842A (en) |
| KR (1) | KR910000242B1 (en) |
| CN (1) | CN1007678B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214625A (en) * | 2010-04-01 | 2011-10-12 | 华上光电股份有限公司 | Semiconductor wafer electrode structure and manufacturing method thereof |
| CN102774858A (en) * | 2012-08-21 | 2012-11-14 | 天津市风船化学试剂科技有限公司 | Method for preparing ultra-purity ammonium-fluoride aggressive agents |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62209835A (en) * | 1986-03-10 | 1987-09-16 | Nec Corp | Formation of surface electrode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59207637A (en) * | 1983-05-11 | 1984-11-24 | Nec Corp | Semiconductor device |
-
1986
- 1986-02-24 JP JP61040946A patent/JPS62196842A/en active Granted
-
1987
- 1987-02-20 KR KR1019870001447A patent/KR910000242B1/en not_active IP Right Cessation
- 1987-02-24 CN CN87100973A patent/CN1007678B/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214625A (en) * | 2010-04-01 | 2011-10-12 | 华上光电股份有限公司 | Semiconductor wafer electrode structure and manufacturing method thereof |
| CN102774858A (en) * | 2012-08-21 | 2012-11-14 | 天津市风船化学试剂科技有限公司 | Method for preparing ultra-purity ammonium-fluoride aggressive agents |
Also Published As
| Publication number | Publication date |
|---|---|
| KR870008387A (en) | 1987-09-26 |
| JPH0482053B2 (en) | 1992-12-25 |
| JPS62196842A (en) | 1987-08-31 |
| KR910000242B1 (en) | 1991-01-23 |
| CN1007678B (en) | 1990-04-18 |
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