CN86108717A - The method for forming electrode of III-V compound semiconductor element - Google Patents
The method for forming electrode of III-V compound semiconductor element Download PDFInfo
- Publication number
- CN86108717A CN86108717A CN86108717.8A CN86108717A CN86108717A CN 86108717 A CN86108717 A CN 86108717A CN 86108717 A CN86108717 A CN 86108717A CN 86108717 A CN86108717 A CN 86108717A
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- Prior art keywords
- electrode
- layer
- base plate
- gold
- compound semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
Abstract
The invention relates on compound semiconductor base plates such as GaAs or GaAlAs, formed based on containing of gold of golden film, can be under the situation that does not undermine this base plate, borrow photoetching process be easy to be processed into the electrode formation method of desired figure.If method according to the present invention, then after being pre-formed titanium film on the electrode forming surface of III-V compound semiconductor base plate, form the alloy-layer of one deck again based on gold, then, this alloy-layer is corroded into predetermined figure, and set the electrode that can do the resistance contact, then the titanium film except that this electrode part on the base plate is removed.
Description
The invention relates to the electrode formation method of group element.In more detail, be the alloy film that is formed about on compound semiconductor base plates such as GaAs or GaAlAs based on gold, can be under the situation that does not undermine this base plate, the mat photoetching process is easy to be processed into the electrode formation method of required figure.
In the past, groups such as GaAs were gazed at as the extremely wide device material of scope in the light emitting diode field-effect transistor (be called for short FET) of visible light and infrared ray or the integrated circuit devices such as (being called for short IC).And the used electrode materials of compound semiconductor such as this kind GaAs or GaAlAs especially as can form resistance electrodes in contact material on this semiconductor base plate, then mostly adopt the alloy based on gold.Usually on the backplate surface of GaAs or GaAlAs etc.,, be to take electrode formation method as described below for these electrode materials being formed required shape.
Promptly as Fig. 8～shown in Figure 11, at first on the surface of surface with the clean semiconductor base plate (9) of chemicals, mat vacuum vapor deposition method or sputtering method form electrode material membrane (10) (see figure 8) of one deck based on gold, secondly, with this surperficial mat photoetching process and use photoresist (8), to form the figure (see figure 9) of required electrode, thereafter with this photoresist (8) as etching mask, and the mat chemicals will be removed (see figure 10) based on film film (10) corrosion of gold, continue it, mat is removed photoresist (8), can form the method for required electrode pattern (seeing the 11st figure).
Yet, in said method, for removing alloy film based on gold, to form required chemicals that is the corrosive liquid of electrode pattern, the general solution that adopts iodine, ammonium iodide and water to mix, not only corrodible this alloy film of this corrosive liquid of thought, and also have the characteristic that can corrode GaAs or GaAlAs, especially have more 10 microns/minute corrosion rates that the left and right sides is big for GaAlAs.Therefore, at the GaAs base plate, especially state alloy film on the GaAlAs base plate, if mat said method when corrosion, backplate surface also can be corroded in corrosive liquid, and it is coarse to cause backplate surface to have, or fails to form with sufficient accuracy the shortcoming of electrode etc.
The present invention is in view of the foregoing and the innovator of institute, and its purpose forms the method for resistance contact electrode for providing under a kind of situation that backplate surface is had no adverse effects.
So, as according to the present invention, the electrode formation method of the group element with following feature then can be provided, promptly on the electrode forming surface of group base plate, be pre-formed titanium film after, form the alloy-layer of one deck again based on gold, continue it, this alloy-layer is corroded into predetermined figure, and set the electrode that to do the resistance contact, titanium film base plate on this electrode part beyond removed thereafter.
Titanium film used herein, used corrosive liquid has corrosion resistance for based on the alloy-layer photoetching of gold the time, and can mat hydrofluoric acid etc. remove it easily, simultaneously, even between above-mentioned semiconductor base plate and above-mentioned electrode, also can not change their electrical characteristics and can form the electrode of resistance contact.
The formation of this film can be adopted method known in this field, and for example sputtering method, vacuum vapor deposition method etc. are carried out it.As for the thickness of this film, will be adjusted to not hinder and between above-mentioned base plate and above-mentioned electrode, form the size that resistance contact, only with below 600 dusts for being fit to, and, preferably be to be 100 dusts～300 dusts to serve as better below 500 dusts.If below 100 dusts, then when carrying out photoetching, this film is not enough to the protection of backplate surface down owing to worry the corrosive liquid existence, so bad.
In when it is removed, the above-mentioned aqueous solution substantially has no adverse effects to the semiconductor base plate.
Corrosive liquid during the used photoetching of the inventive method, and adopt the known aqueous solution of forming by iodine and ammonium iodide in this field.
The electrode material that the inventive method is used, photoresist, their forming method, photoetching and protective layer are peeled off etc., all adopt material known in this field and method.
Behind the film that forms on the electrode forming surface of group base plate with the titanium formation, and then form the electrode film of one deck resistance contact in the above, when make this electrode film form figure with photoetching process when, aforementioned titanium film can prevent that above-mentioned corrosive liquid from directly contacting the aforesaid semiconductor backplate surface, this backplate surface thereby can be not coarse.Promptly as according to the present invention, then titanium film can not be subjected to photoetching in fact, and has a kind of effect of masking material.
Thereafter, if aforementioned semiconductor base plate is immersed in the hydrofluoric acid of dilution, then the titanium film that is exposed will directly contact with hydrofluoric acid, and can remove it very simply.
Below, illustrate in detail holding the mat embodiment within the present invention.Only the present invention's scope is not subjected to the qualification of this embodiment.
(embodiment 1)
Fig. 1～Fig. 6 is expression mat the inventive method forms the resistance contact on the surface of n type GaAlAs wafer a electrode, to make the description of the process figure of visible light emitting diode.
As shown in Figure 1, at first on p type GaAs base plate (1), mat liquid-phase growth method and make p type GaAlAs layer (2) and n type GaAlAs layer (3) grow successively is to obtain to be formed with the wafer (4) of p-n junction.Secondly, this wafer (4) is used by sulfuric acid and corrosive liquid that hydrogen peroxide made, for example use sulfuric acid: hydrogen peroxide: the mixed liquor of water=8: 1: 1, corrode the dirty dirt of removal backplate surface.
Thereafter, on the n of this corrosion type GaAlAs layer (3) surface, as shown in Figure 2, form the thick titanium layer (5) that is about 100～300 dusts with sputtering method, then form the alloy-layer (6) and the gold layer (7) of gold and silicon, thickness closes 3 altogether, 000～5,000 dust is with as electrode layer.
Secondly, as shown in Figure 3, coat photoresist (8) in this electrode layer surface, after oven dry in advance, the figure mat exposure device that institute is fixed is exposed, and by the video picture oven dry, to form the figure of photoresist.
Continue it, as shown in Figure 4, alloy-layer (6) and gold layer (7) with gold and silicon use the corrosive liquid of gold that is the aqueous solution of iodine and ammonium iodide to be corroded, to remove unnecessary portions.At this moment, titanium layer is corroded by the corrosive liquid of gold hardly, so wafer (4) surface is to become the state that titanium layer (5) exposes.
Secondly, as shown in Figure 5,, in diluted 20 times hydrofluoric acid, soak about about 10 seconds, to remove this layer with the titanium layer (5) that exposes on this wafer (4).And, thereafter as shown in Figure 6, at the formed photoresist of electrode surface, use stripper that it is removed, and in inert gas, impose 400～500 ℃ heat treatment, to form the resistance contact electrode.At this moment, once the contact resistance of electrode was weighed via resistance between electrode, but compared, do not had any difference, known thus that titanium layer did not have any impact for the contact resistance of electrode with the situation that above-mentioned titanium layer is not set as yet.
(embodiment 2)
This embodiment system is applicable to and forms the method for resistance contact electrode on the p type GaAlAs layer of the visible light emitting diode that uses the GaAlAs wafer.
Similarly to Example 1, p type GaAlAs laminar surface with the formation of mat liquid-phase growth method, after the corrosive liquid cleaning, and then the mat sputtering method to form thickness on this face be the titanium layer of 100～300 dusts, then, same mat sputtering method forms 3,000～5, the gold of 000 dust thickness and the alloy-layer of zinc are with as electrode layer.Thereafter, use photoetching process with embodiment 1 same process, and gold and the alloy-layer mat iodine of zinc and the aqueous solution of ammonium iodide, the titanium layer hydrofluoric acid of mat then then through diluting, corroded respectively, to form electrode pattern, then, in inertia gas, impose 400～500 ℃ heat treatment, to form the electrode of resistance contact.
The as above electrode that is formed, wafer surface can be not coarse, and can obtain fully low contact resistance, obtains the effect identical with embodiment 1.
As mentioned above, if according to the inventive method, then the contact resistance for formed electrode can not have any impact, and can prevent wafer surface because of corrosion cause coarse, and that this is in the past formation method institute is unavoidable. In addition, the accuracy of electrode pattern can be improved, therefore, the stabilisation of element characteristic can be sought.
Moreover, for the formed thickness by the diaphragm that titanium consisted of of wafer surface, and the pass of the resistance variations between electrode when passing to 10 milliamperes of electric currents between formed resistance contact electrode on this film System is measured, and has obtained result shown in Figure 7.
If the method according to the present invention; then because on the semiconductor base plate; be pre-formed the diaphragm that is consisted of by titanium; and thickness regulated; even still form electrode according to mode in the past thereafter; also can at backplate surface coarse phenomenon not take place, and can form and in the past equal resistance contact electrode when electrode corrosion. In addition, owing to above-mentioned corrosion can be easy to carry out, so the shape of electrode also can be finished it with pinpoint accuracy.
The simple declaration of accompanying drawing:
Fig. 1～Fig. 6 ... the description of the process figure that the inventive method is illustrated.
Fig. 7 ... expression is by the contact resistance of the inventive method gained electrode curve map for the dependence of titanium film thickness.
Fig. 8～Figure 11 ... to the description of the process figure that method in the past illustrates.
(1) ... p type GaAs base plate, (2) p type GaAlAs layer, (3) n type GaAlAs layer, (4) wafer, (5) ... titanium layer, (6) ... the alloy-layer of gold and silicon, (7) ... the gold layer, (8) ... photoresist.
Claims (3)
1, a kind of electrode formation method of III-V group compound semiconductor element, it is characterized in that, on the electrode forming surface of III-V group compound semiconductor base plate, after being pre-formed titanium film, form alloy-layer again based on gold, and this alloy-layer corroded into the figure of defined, setting can be made the electrode of resistance contact, thereafter the titanium film except that this electrode part on the base plate is removed.
According to the method for claim 1, it is characterized in that 2, the thickness of this titanium film ties up to below 600 dusts.
According to the method for claim 1, it is characterized in that 3, the removal system of this titanium film carries out with hydrofluoric acid aqueous solution.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP290040/85 | 1985-12-23 | ||
| JP60290040A JPS62162327A (en) | 1985-12-23 | 1985-12-23 | Electrode forming method for iii-v compound semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN86108717A true CN86108717A (en) | 1987-07-22 |
| CN1007677B CN1007677B (en) | 1990-04-18 |
Family
ID=17751001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN86108717A Expired CN1007677B (en) | 1985-12-23 | 1986-12-22 | Method for forming electrode of iii-v simi-conducting elements |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS62162327A (en) |
| KR (1) | KR900008408B1 (en) |
| CN (1) | CN1007677B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100357495C (en) * | 2004-03-16 | 2007-12-26 | 中国科学院微电子研究所 | Method for producing electroplating coat |
| CN109087852A (en) * | 2018-08-10 | 2018-12-25 | 深圳市华星光电技术有限公司 | The production method of transistor metal electrode structure |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1950326A1 (en) | 2007-01-29 | 2008-07-30 | Interuniversitair Microelektronica Centrum | Method for removal of bulk metal contamination from III-V semiconductor substrates |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5575276A (en) * | 1978-12-02 | 1980-06-06 | Sharp Corp | 3[5 group compound semiconductor device |
| JPS5830170A (en) * | 1981-08-15 | 1983-02-22 | Stanley Electric Co Ltd | Compound semiconductor element and forming method of its electrode |
-
1985
- 1985-12-23 JP JP60290040A patent/JPS62162327A/en active Pending
-
1986
- 1986-12-12 KR KR1019860010633A patent/KR900008408B1/en not_active IP Right Cessation
- 1986-12-22 CN CN86108717A patent/CN1007677B/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100357495C (en) * | 2004-03-16 | 2007-12-26 | 中国科学院微电子研究所 | Method for producing electroplating coat |
| CN109087852A (en) * | 2018-08-10 | 2018-12-25 | 深圳市华星光电技术有限公司 | The production method of transistor metal electrode structure |
| CN109087852B (en) * | 2018-08-10 | 2020-09-08 | 深圳市华星光电技术有限公司 | Method for manufacturing transistor metal electrode structure |
Also Published As
| Publication number | Publication date |
|---|---|
| KR900008408B1 (en) | 1990-11-20 |
| CN1007677B (en) | 1990-04-18 |
| JPS62162327A (en) | 1987-07-18 |
| KR870006644A (en) | 1987-07-13 |
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