CN100357495C - Method for producing electroplating coat - Google Patents
Method for producing electroplating coat Download PDFInfo
- Publication number
- CN100357495C CN100357495C CNB2004100396950A CN200410039695A CN100357495C CN 100357495 C CN100357495 C CN 100357495C CN B2004100396950 A CNB2004100396950 A CN B2004100396950A CN 200410039695 A CN200410039695 A CN 200410039695A CN 100357495 C CN100357495 C CN 100357495C
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- layer
- metal
- plating
- electroplating
- titanium metal
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Abstract
The present invention relates to a method for producing an electroplating coat. The present invention is characterized in that the method comprises the following steps: (1) producing a first metallic titanium layer on a semiconductor substrate; (2) producing a metallic gold layer on the first metallic titanium layer; (3) producing a second metallic titanium layer on the metallic gold layer to complete the production of the electroplating coat.
Description
Technical field
The present invention relates to the electroplating technology of field of semiconductor manufacture, is a kind of making method of the novel plating furling plating that is used for electroplating technology.
Background technology
Electroplating technology is a kind of technical process commonly used in the semiconductor fabrication, and especially in the solid state microwave unicircuit was made, electroplating technology was through being usually used in metal thickening, aspects such as back face metalization.According to the requirement of electroplating technology, the surface of electroplating device need apply layer of metal as negative electrode, and this layer metal is called furling plating.
Furling plating metal major part is a gold, but gold is bad in the adhesivity on semiconductor substrate materials surface, easily comes off, and present furling plating uses the structure of Ti/Au (titanium/gold) more, and the good Ti of first sputter adhesivity re-uses Au.And this method has some defectives, because under most of situation, meeting resist coating on the plating furling plating of microelectronic technique, photoresist material is bad in adhering to of gold surface, is easy to the glue phenomenon occur falling, influences galvanized quality.
Summary of the invention
Content of the present invention is to propose a kind of making method of electroplating furling plating, and it is simple that it has technology, good reliability, and adhesivity is good, the advantage of being convenient to operate.
A kind of making method of electroplating furling plating of the present invention is characterized in that, comprises the steps:
A) make the first layer titanium metal on semiconducter substrate, the thickness of this first layer titanium metal is 300 ;
B) make the layer of metal gold on the first layer titanium metal, the thickness of this metallic gold is 500-1500 ;
C) make second layer titanium metal on metallic gold, the thickness of this second layer titanium metal is 200 , finishes the making of furling plating.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 is a structural representation of the present invention.
Embodiment
For realizing above purpose, the structure that furling plating structure of the present invention is used Ti/Au/Ti as shown in Figure 1, its making processes is for using the method sputter of magnetron sputtering, certain thickness Ti of sputter or Au successively.
See also shown in Figure 1, the present invention, a kind of making method of electroplating furling plating is characterized in that, comprises the steps:
A) make the first layer titanium metal 2 on semiconducter substrate 1, the thickness of this first layer titanium metal 2 is 300 ;
B) make layer of metal gold 3 on the first layer titanium metal 2, the thickness of this metallic gold 3 is 500-1500 ;
C) make second layer titanium metal 4 on metallic gold 3, the thickness of this second layer titanium metal 4 is 200 , finishes the making of furling plating.
Plating area top layer second layer titanium metal 4 uses caustic solution to remove when wherein electroplating.
The first layer Ti metal 2 is an intermediate layer among the present invention, the about 300 Ti of sputter, because metal Ti has good wetting property and adhesivity can well be attached to semiconductor material surface, simultaneously because Au has good bonding properties, serve as adhesive linkage, make the substrate that is bonded in that furling plating can be firm.Metal A u layer 3 sputters at the first layer Ti metal 2 surfaces, this layer is for electroplating crucial one deck of Au, the electroplating deposition of Au starts from this layer, according to different plating requirements, the thickness of this layer is chosen as 500-1500 , this one deck also is crucial low resistivity zone, and in plating, the low-resistance furling plating can reach better electroplating quality and homogeneity.Be the Ti of second layer Ti metal 4 about 200 at last, this layer Ti metal serves as Au and photoresist material bonded transition layer, the characteristics of utilizing Ti to combine closely with photoresist material and Au, and the use of this layer Ti has guaranteed that gummed is firm on the furling plating, and is reliable.As required can also be on second layer Ti metal 4 resist coating 5.According to the requirement of electroplating technology, plating is to expose as the Au of negative electrode, and the use of furling plating utilizes corrosive fluid that plating area metal Ti corroding method is exposed the Au in the electroplating region furling plating among the present invention.
Furling plating of the present invention is in experimental observation, and the adhesion of furling plating and substrate is very firm, and for obscission takes place, simultaneously, because the introducing of top layer Ti has solved the recurrent photoresist material obscission of gluing on the furling plating.
Claims (1)
1, a kind of making method of electroplating furling plating is characterized in that, comprises the steps:
A) make the first layer titanium metal on semiconducter substrate, the thickness of this first layer titanium metal is 300 ;
B) make the layer of metal gold on the first layer titanium metal, the thickness of this metallic gold is 500-1500 ;
C) make second layer titanium metal on metallic gold, the thickness of this second layer titanium metal is 200 , finishes the making of furling plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100396950A CN100357495C (en) | 2004-03-16 | 2004-03-16 | Method for producing electroplating coat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100396950A CN100357495C (en) | 2004-03-16 | 2004-03-16 | Method for producing electroplating coat |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1670262A CN1670262A (en) | 2005-09-21 |
| CN100357495C true CN100357495C (en) | 2007-12-26 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100396950A Expired - Fee Related CN100357495C (en) | 2004-03-16 | 2004-03-16 | Method for producing electroplating coat |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100357495C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112080710B (en) * | 2020-09-16 | 2021-06-25 | 西南交通大学 | Surface coating method of carbon fiber and prepared coated carbon fiber |
| CN113337860B (en) * | 2021-08-02 | 2021-11-09 | 华芯半导体研究院(北京)有限公司 | Method for electroplating on surface of chip wafer and application thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN86108717A (en) * | 1985-12-23 | 1987-07-22 | 夏普公司 | The method for forming electrode of III-V compound semiconductor element |
| JPH04307737A (en) * | 1991-04-04 | 1992-10-29 | Nec Corp | Manufacture of semiconductor device |
| JPH06291191A (en) * | 1993-04-01 | 1994-10-18 | Nec Corp | Manufacturing for semiconductor device |
| CN1328369A (en) * | 2000-06-13 | 2001-12-26 | 深圳市众量激光器高技术有限公司 | Quantum trap laser and Schottky-barrier contact method for limiting current |
| CN1358327A (en) * | 1999-06-30 | 2002-07-10 | 拉姆研究公司 | Method and apparatus for etching gold metal layer using titanium hardmask |
-
2004
- 2004-03-16 CN CNB2004100396950A patent/CN100357495C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN86108717A (en) * | 1985-12-23 | 1987-07-22 | 夏普公司 | The method for forming electrode of III-V compound semiconductor element |
| JPH04307737A (en) * | 1991-04-04 | 1992-10-29 | Nec Corp | Manufacture of semiconductor device |
| JPH06291191A (en) * | 1993-04-01 | 1994-10-18 | Nec Corp | Manufacturing for semiconductor device |
| CN1358327A (en) * | 1999-06-30 | 2002-07-10 | 拉姆研究公司 | Method and apparatus for etching gold metal layer using titanium hardmask |
| CN1328369A (en) * | 2000-06-13 | 2001-12-26 | 深圳市众量激光器高技术有限公司 | Quantum trap laser and Schottky-barrier contact method for limiting current |
Non-Patent Citations (2)
| Title |
|---|
| 半导体金刚石薄膜功率器件 田敬民.电力电子技术，第2期 1994 * |
| 金属－半导体金刚石薄膜的接触性质研究 刘兴钊等.电子学报，第25卷第6期 1997 * |
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| Publication number | Publication date |
|---|---|
| CN1670262A (en) | 2005-09-21 |
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Granted publication date: 20071226 |