CN1328369A - Quantum trap laser and Schottky-barrier contact method for limiting current - Google Patents
Quantum trap laser and Schottky-barrier contact method for limiting current Download PDFInfo
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- CN1328369A CN1328369A CN 00109166 CN00109166A CN1328369A CN 1328369 A CN1328369 A CN 1328369A CN 00109166 CN00109166 CN 00109166 CN 00109166 A CN00109166 A CN 00109166A CN 1328369 A CN1328369 A CN 1328369A
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Abstract
A quantum well laser and its Schottky barrier contact method for limiting current is disclosed. Said schottky contact barrier is prepared through magnetically controlled sputtering to sputter Ti/Pt/Au contact electrode and schottky contact gold, optical and chemical etching to form laser waveguide metal strips at intervals, chemical corrosion to remove GaAs layer between metal strips and expose InGaP layer, cleaning and sputtering gold.
Description
The present invention relates to not have aluminium quantum-well laser and Schottky Barrier Contact current limiting technique, particularly 920-940nm does not have aluminium InGaAsP/InGaP/GaAs quantum-well laser and Schottky Barrier Contact current limiting technique, belongs to field of semiconductor photoelectron technique.
The high power laser of 808nm wave band in the past adopts the AlGaAs of high aluminium content to make the optics covering more, near owing to aluminium these laser cavity surfaces oxidation has strengthened the non-radiative recombination rate that injects charge carrier, cause laser cavity surface overheated, reduced the chamber face optical damage threshold of laser, the formation of concealed wire defective and expansion have also seriously reduced the life-span and the reliability of laser.Because aluminium has high oxidation rate, also make regrowth process difficulty more, this is unfavorable to making buried type hetero junction laser, distributed feedback laser and integrated optical circuit.Studies show that in recent years, make the optics covering with InGaP, have at the GaAs/InGaP interface low-down recombination rate ((1.5cm/s), the laser chamber surface temperature obviously reduces, the optical damage threshold of high power laser chamber face is significantly increased, help the raising of power; And replace GaAs to make the threshold current density that limiting layer can reduce device with InGaAsP, reduce internal loss, improve the internal quantum efficiency of device, thereby reliability, stability and the life-span of further having improved high power laser.Show that by domestic and international big quantity research and product development for many years no aluminum has the aluminum superpower laser that following outstanding feature is arranged than InGaAsP/GaAs:
(1) Output optical power density is big, can reach 9.1 megawatt square centimeters, for the twice that contains aluminum laser many; (2) reliability height; (3) life-span is long; (4) characteristic temperature big (176K); (5) series resistance is little, thermal conductivity is big.Therefore, the research and development of not having the aluminum semiconductor laser in recent years becomes focus.
In the prior art, no aluminium high power semiconductor lasers adopts oxide strip structure restriction electric current more, its preparation technology is: at first substrate slice is cleaned and sputter last layer oxide-film such as silicon dioxide with sputter and ultrasonic cleaning machine, then on oxide-film with mask aligner photoetching bar shaped and in the drying box drying, the chemical corrosion oxide-film forms the oxide strip structure, the cleaning of removing photoresist is done upper and lower electrode by coating machine at last.This structure and preparation method's shortcoming is that complicated process of preparation, heat dispersion are poor, causes device stability poor, has limited the raising in laser power and life-span, and the life-span of therefore improving high power semiconductor lasers is a problem that presses for solution.
The object of the present invention is to provide a kind of heat-sinking capability height, stable, 920-940nm does not have the aluminum semiconductor laser efficiently.
Another object of the present invention is to adopt Schottky barrier structure and current limiting technique, prepares the method that 920-940nm does not have the aluminum semiconductor laser, and this method is simple, stable than the manufacturing process of prior art, device yield is high.
Metal mainly contacts in two ways with semiconductor: one is an ohmic contact, and promptly forward and reverse voltage and current is linear; It two is a Schottky contacts, and make a comment or criticism reverse current and voltage are not linear, and the relation of its voltage and current is seen Fig. 2.Because Schottky contacts has rectified action, Schottky contacts current limiting technique and relevant product are mainly used in computer, field effect transistor, large scale integrated circuit and electronic device.In order to realize purpose of the present invention, among the present invention, utilize this characteristic of Schottky contacts rectified action, and contact the characteristics of bigger Schottky barrier between joining gold and the InGaP, play the reverse current restriction, replace adopting the practice of oxide stripe shape restriction electric current in the past.
The concrete technical scheme that the present invention adopts is: 920-940nm does not have aluminium InGaAsP/InGaP/GaAs Schottky Barrier Contact current limiting technique, adopts magnetically controlled sputter method at chip of laser P face sputtered with Ti/Pt/Au contact electrode and Schottky contacts gold; Alloy forms P face ohmic contact under the nitrogen protection, goes out the laser waveguide bonding jumper of the wide and spacing of certain bar by photoetching and chemical etching; Evaporate AuGe/Ni/Au successively after sample attenuate and the cleaning, alloy under the protection of nitrogen hydrogen, sample is placed on NH
4OH: H
2O
2: H
2The GaAs layer on erosion removal bonding jumper spacing surface exposes the InGaP laminar surface in the O liquid; Sample taking-up back uses deionized water rinsing, nitrogen to dry up back sputter gold, promptly forms the Au/InGaP Schottky contact barrier on the spacing surface, when electric current passes through, plays the electric current restriction; Can obtain 920-940nm laser by the content that changes SQW-InGaAsP.
Quantum-well laser of the present invention, it is characterized in that structure is: the surface is the Schottky contacts gold, the wide Schottky contacts gold of 100 μ m bars lower floor is the Ti/Pt/Au layer, be close under it for the GaAs layer, the GaAs layer that 100 μ m bars are wide and the Schottky contacts gold of 200 μ m spacings are InGaP-InGaAsP--SQW-InGaAsP--InGaAsP-InGaP-substrate--AuGe/Ni/Au layer down, the thickness of above-mentioned InGaP-InGaAsP--SQW-InGaAsP--InGaAsP-InGaP layer is 2-5 μ m, and the thickness of substrate layer is 100 μ m; Substrate can be GaAs or InP.
The present invention has simplified the manufacturing process of no aluminum semiconductor laser, need not form oxide-film in the manufacture process; Compare with oxide strip structure laser with the laser of Schottky barrier structure, because the effect that the laser of Schottky barrier structure has rectification and current limliting, electric current on the spacing surface is restricted, and easier heat radiation can increase substantially life-span of high power semiconductor lasers; Adopt the inventive method, the preparation technology of laser is simplified, performance improves.
Describe the present invention in detail below in conjunction with the drawings and specific embodiments.
Description of drawings:
Fig. 1 is the structural representation of semiconductor laser of the present invention;
Fig. 2 is Schottky current limliting figure.
Embodiment 1
(1) adopts sputtering method Ti/Pt/Au (35nm/50nm/200nm) in the laser extension P face sputter after the cleaning.
(2) alloy formed P face ohmic contact in 3 minutes under 440 ℃ of nitrogen hydrogen protections.
(3) go out the laser waveguide bonding jumper of the wide 200 μ m spacings of 100 μ m bars by photoetching and chemical etching;
(4) sample is thinned to and evaporates AuGe/Ni/Au (50nm/50nm/300nm) after 100 μ m clean successively under the protection of nitrogen hydrogen, 380 ℃ of alloys 3 minutes,
(5) sample is placed on NH
4OH: H
2O
2: H
2The GaAs layer on bonding jumper spacing surface was removed in corrosion in 30 minutes in the O liquid, exposed the InGaP laminar surface;
(6) use deionized water rinsing, nitrogen to dry up back sputter 200nm gold after sample takes out, promptly form the Au/InGaP Schottky contact barrier and play the electric current restriction on the wide spacing surface of 200 μ m.
(1) adopts sputtering method Ti/Pt/Au (30nm/60nm/200nm) in the laser extension P face sputter after the cleaning.
(2) alloy forms P face ohmic contact under 440 ℃ of nitrogen hydrogen protections.
(3) go out the laser waveguide bonding jumper of the wide 200 μ m spacings of 100 μ m bars by photoetching and chemical etching.
(4) sample is thinned to and evaporates AuGe/Ni/Au (50nm/50nm/200nm) after 100 μ m clean successively under the protection of nitrogen hydrogen, 380 ℃ of alloys 3 minutes,
(5) sample is placed on NH
4OH: H
2O
2: H
2The GaAs layer on bonding jumper spacing surface was removed in corrosion in 30 minutes in the O liquid, exposed the InGaP laminar surface;
(6) use deionized water rinsing, nitrogen to dry up back sputter 200nm gold after sample takes out, promptly form the Au/InGaP Schottky contact barrier and play the electric current restriction on the wide spacing surface of 200nm.
(1) adopts sputtering method Ti/Pt/Au (30nm/50nm/200nm) in the laser extension P face sputter after the cleaning.
(2) alloy formed P face ohmic contact in 10 minutes under 460 ℃ of nitrogen hydrogen protections.
(3) go out the laser waveguide strip metal of the wide 200 μ m spacings of 100 μ m bars by photoetching and chemical etching;
(4) sample is thinned to and evaporates AuGe/Ni/Au (60nm/50nm/300nm) after 100 μ m clean successively under the protection of nitrogen hydrogen, 380 ℃ of alloys 3 minutes,
(5) sample is placed on NH
4OH: H
2O
2: H
2The GaAs layer on erosion removal bonding jumper spacing surface exposes the InGaP laminar surface in the O liquid;
(6) use deionized water rinsing, nitrogen to dry up back sputter 200nm gold after sample takes out, promptly form the Au/InGaP Schottky contact barrier and play the electric current restriction on the wide spacing surface of 200nm.
See that accompanying drawing 1,1 is the Au layer, 2 is the Ti/Pt/Au layer, and 3 is the InGaP layer, and 4 is InGaAsP-SQW-InGaAsP-InGaAsP, and wherein SQW is a semiconductor quantum well, and 6 is the GaAs upper strata, and 5 is substrate, is the GaAs layer in the present embodiment; 7 is AuGe/Ni/Au, and the thickness of InGaP-InGaAsP--SQW-InGaAsP--InGaAsP-InGaP layer is 2 μ m, and the thickness of GaAs layer is 100 μ m.
Structure is with embodiment 4, and substrate is InP; The thickness of InGaP-InGaAsP--SQW-InGaAsP--InGaAsP-InGaP layer is 3 μ m, and the thickness of InP layer is 100 μ m.
Structure is with embodiment 4, and the thickness of InGaP-InGaAsP--SQW-InGaAsP--InGaAsP-InGaP layer is 5 μ m, and the thickness of GaAs layer is 100 μ m.
Claims (6)
1. quantum-well laser Schottky Barrier Contact current limiting technique is characterized in that: adopt magnetically controlled sputter method at chip of laser P face sputtered with Ti/Pt/Au contact electrode and Schottky contacts gold; Nitrogen hydrogen protection alloy down forms P face ohmic contact, goes out the laser waveguide bonding jumper of the wide 200 μ m spacings of 100 μ m bars by photoetching and chemical etching; Evaporate AuGe/Ni/Au successively after sample attenuate and the cleaning, alloy under the protection of nitrogen hydrogen, sample is placed on NH
4OH: H
2O
2: H
2The GaAs layer on erosion removal bonding jumper spacing surface exposes the InGaP laminar surface in the O liquid; Sample takes out the back and uses deionized water rinsing, nitrogen to dry up the back splash-proofing sputtering metal, promptly forms the Au/InGaP Schottky contact barrier on the wide spacing surface of 200nm and plays the electric current restriction.
2. quantum-well laser Schottky Barrier Contact current limiting technique according to claim 1 is characterized in that:
(1) adopts sputtering method Ti/Pt/Au (35nm/50nm/200nm) in the laser extension P face sputter after the cleaning.
(2) alloy formed P face ohmic contact in 3 minutes under 440 ℃ of nitrogen hydrogen protections.
(3) go out the laser waveguide bonding jumper of the wide 200 μ m spacings of 100 μ m bars by photoetching and chemical etching;
(4) sample is thinned to and evaporates AuGe/Ni/Au (50nm/50nm/300nm) after 100 μ m clean successively under the protection of nitrogen hydrogen, 380 ℃ of alloys 3 minutes,
(5) sample is placed on NH
4OH: H
2O
2: H
2The GaAs layer on bonding jumper spacing surface was removed in corrosion in 30 minutes in the O liquid, exposed the InGaP laminar surface;
(6) use deionized water rinsing, nitrogen to dry up back sputter 200nm metal after sample takes out, promptly form the Au/InGaP Schottky contact barrier and play the electric current restriction on the wide spacing surface of 200nm.
3. Schottky Barrier Contact current limliting quantum-well laser is characterized in that: 1 layer is Au in the laser, and 2 layers is Ti/Pt/Au, and 3 layers is InGaP, and 4 layers is InGaAsP, and 5 layers is SQW-InGaP, and wherein SQW is a semiconductor quantum well, and 6 is the GaAs upper strata, and 7 is the GaAs layer; 8 layers is AuGe/Ni/Au.
4. Schottky Barrier Contact current limliting quantum-well laser according to claim 3, it is characterized in that: the preparation method the following is: adopt magnetically controlled sputter method at chip of laser P face sputtered with Ti/Pt/Au contact electrode and Schottky contacts gold; Nitrogen hydrogen protection alloy down forms P face ohmic contact, goes out the laser waveguide bonding jumper of the wide 200 μ m spacings of 100 μ m bars by photoetching and chemical etching; Evaporate AuGe/Ni/Au successively after sample attenuate and the cleaning, alloy under the protection of nitrogen hydrogen, sample is placed on NH
4OH: H
2O
2: H
2The GaAs layer on erosion removal bonding jumper spacing surface exposes the InGaP laminar surface in the O liquid; Sample takes out the back and uses deionized water rinsing, nitrogen to dry up the back splash-proofing sputtering metal, promptly forms Au/InGaP Schottky contact barrier structure on the wide spacing surface of 200nm, plays the electric current restriction.
5. Schottky Barrier Contact current limliting quantum-well laser according to claim 3 is characterized in that: the thickness of InGaP-InGaAsP--SQW-InGaAsP--InGaAsP-InGaP layer is 2-5 μ m, and the thickness of GaAs layer is 100 μ m.
6. Schottky Barrier Contact current limliting quantum-well laser according to claim 3 is characterized in that: described laser produces the laser of 920-940nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 00109166 CN1328369A (en) | 2000-06-13 | 2000-06-13 | Quantum trap laser and Schottky-barrier contact method for limiting current |
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|---|---|---|---|
| CN 00109166 CN1328369A (en) | 2000-06-13 | 2000-06-13 | Quantum trap laser and Schottky-barrier contact method for limiting current |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1309118C (en) * | 2004-05-28 | 2007-04-04 | 武汉大学 | High-efficient metal heterogenous light waveguiding device for nanometer focus |
| CN100357495C (en) * | 2004-03-16 | 2007-12-26 | 中国科学院微电子研究所 | Method for manufacturing electroplated layer |
| CN102403209A (en) * | 2011-11-10 | 2012-04-04 | 上海大学 | Preparation method for ohmic contact electrode based on diamond film field effect transistor |
-
2000
- 2000-06-13 CN CN 00109166 patent/CN1328369A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100357495C (en) * | 2004-03-16 | 2007-12-26 | 中国科学院微电子研究所 | Method for manufacturing electroplated layer |
| CN1309118C (en) * | 2004-05-28 | 2007-04-04 | 武汉大学 | High-efficient metal heterogenous light waveguiding device for nanometer focus |
| CN102403209A (en) * | 2011-11-10 | 2012-04-04 | 上海大学 | Preparation method for ohmic contact electrode based on diamond film field effect transistor |
| CN102403209B (en) * | 2011-11-10 | 2013-04-03 | 上海大学 | Preparation method for ohmic contact electrode based on diamond film field effect transistor |
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