CN86106620A - Microwave enhanced chemical vapor deposition system and method using magnetic field - Google Patents
Microwave enhanced chemical vapor deposition system and method using magnetic field Download PDFInfo
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- CN86106620A CN86106620A CN86106620.0A CN86106620A CN86106620A CN 86106620 A CN86106620 A CN 86106620A CN 86106620 A CN86106620 A CN 86106620A CN 86106620 A CN86106620 A CN 86106620A
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- 238000000034 method Methods 0.000 title claims abstract description 78
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 70
- 230000008569 process Effects 0.000 claims abstract description 52
- 238000000151 deposition Methods 0.000 claims abstract description 43
- 230000008021 deposition Effects 0.000 claims abstract description 42
- 230000003287 optical effect Effects 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 206
- 238000006243 chemical reaction Methods 0.000 claims description 106
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 68
- 229910052786 argon Inorganic materials 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 23
- 230000002708 enhancing effect Effects 0.000 claims description 13
- 238000005137 deposition process Methods 0.000 claims description 8
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- XPBBUZJBQWWFFJ-UHFFFAOYSA-N fluorosilane Chemical compound [SiH3]F XPBBUZJBQWWFFJ-UHFFFAOYSA-N 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
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- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
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Images
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-
- H01L21/203—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention shows an improved chemical vapor deposition process; in this method, cyclotron resonance is combined with an optical or plasma chemical vapor deposition method to deposit a thin film having high performance at a high deposition rate. The high deposition rate is attributed to cyclotron resonance, while the high quality performance is attributed to both chemical vapor deposition methods (CVD)s) Combinations of (a) and (b).
Description
The present invention relates to utilize the microwave in magnetic field to strengthen chemical vapor deposition (CVD) system, more precisely, it relates to electron cyclotron resonace (ECR) chemical vapor deposition (CVD) system.
In film generation technique field, known light reinforcing chemical gas inter-deposition method is arranged, it is than general CVD, and (for example heating power CVD and plasma enhanced CVD) is superior, because it can realize the deposit of film under not damaging the lesser temps of the semiconductor surface of film former thereon.Light strengthens CVD and also has the advantage of a kind of what is called " surface transport ".That is, the atom of illuvium or molecule are preserved their intensity of activation after being deposited on substrate surface, just because this intensity of activation, make these atoms or molecular motion and also can not carry out forming film on that part of substrate surface of deposit; Thereby found a kind of method of formation that on rough substrate surface, produces the topped coating of improved substep with CVD.
Yet light strengthens the film formation speed of CVD and considers that from commercial benefits required high speed is also poor far.(now having proposed needs deposition speed is improved tens times).
On the other hand, known a kind of utilization makes process gas become the plasma CVD of the glow discharge of plasma body by means of high frequency or direct supply.The advantage of this technology is can deposit under lower temperature.Especially, when the deposition of amorphous silicon thin layer, in and deathnium on the thin layer and drop into hydrogen or fontanel element simultaneously so that easily obtain to have the lead end or the p-n junction of improved characteristics.This plasma CVD also is enough to adapt to the requirement of high rate deposition.
In addition, known a kind of CVD that utilizes electron cyclotron resonace (ECR),, can become to have the thick film of 5000 dust to 10 micron thickness with the speed deposit of 10 dust/seconds to 100 dust/seconds according to this technology.Yet the surface flow that reactant gases is parallel to substrate makes that this technology can not be at recess, (for example in groove) film former.Remove this part, make the frequency resonance of ar atmo with 2.47 mega hertzs, the high-intensity magnetic field that this needs 857 Gausses makes air core coil very huge.As a result, owing to can be used for discharging the limited space system of gas, even may sacrifice the standard that 10% thickness on 3 inches disks rises and falls.
Therefore, the purpose of this invention is to provide and a kind ofly have high deposition speed and do not damage the improved chemical gas-phase precipitation system and the method for the characteristic performance of illuvium.
Fig. 1 is the side-view of the local section of the expression first embodiment of the present invention.
Fig. 2 is the side-view of the local section of the expression second embodiment of the present invention.
Fig. 3 is the side-view of the local section of the expression third embodiment of the present invention.
According to the present invention, mainly come activated reactions gas by cyclotron resonance. Be excited gas dispense in reaction compartment, and in reaction compartment, process gas generation chemical reaction is to carry out the deposit of film. The present invention gets ECR CVD and light strengthens or the advantage of glow discharge CVD; ECR CVD is preponderating aspect the high deposition speed, and glow discharge and light enhancing CVD are preponderating aspect the uniformity of deposition film. For example, when strengthening the CVD deposited amorphous silicon thin film with glow discharge and light, its deposition speed is respectively 1 A/min and 0.1 A/min.
Glow discharge CVD and light are strengthened CVD and electron cyclotron resonace (ECR) the CVD use that combines.This combination makes and might reach very high deposition speed under the situation of not damaging uniformity of film.Under the situation of deposited amorphous silicon thin film, when when light strengthens CVD and matches, its deposition speed be 5 dusts/minute to 20 dusts/minute; When cooperating with glow discharge CVD, its deposition speed be 20 dusts/minute to 100 dusts/minute.
In most preferred embodiment, with in addition in reaction or the rare gas element or the nonproductive gas that all can not produce solid matter after decomposing realize cyclotron resonance.Usually use argon gas as rare gas element.But, also can use helium, neon or krypton gas.Oxide gas, for example oxygen, nitrogen oxide (N
2O, NO, NO
2), carbonoxide (CO, CO
2), water (H
2O) or nitride gas for example nitrogen, ammonia, hydrazine (N
2H
4), Nitrogen trifluoride (NF
3, N
2F
6) or their mixtures after pilot-gas or diluted in hydrogen, can be used as nonproductive gas.
Silicide gas, for example Si
nH
2n+1(n 〉=1), SiF
n(n 〉=2), SiH
nF
4-n(4 〉=n 〉=1); Germanium compound, for example GeH
4, GeF
4, GeH
nF
4-n(n=1,2,3), aluminum compound, for example Al(CH
3)
3, Al(C
2H
5)
3, Al Cl
3Or gallium compound, for example Ga(CH
3)
3And Ga(C
2H
5)
3Above gas is used as process gas and introduces reaction compartment, and they produce the solid matter that is deposited by means of chemical reaction or decomposition.In addition, the impurity gas of interpolation, for example B
2H
6, BF
3, PH
3, or AsH
3Can be blended in the nonproductive gas.
Activate nonproductive gas with cyclotron resonant method, and it is introduced reaction compartment; In reaction compartment, nonproductive gas mixes with process gas, and gives process gas with energy.In this process, process gas is fully activated, and obtains almost the energy of necessity of 100%.This energy of process gas is " potential ", and is diffused in and has glow discharge or ultraviolet entire reaction space.Under this atmosphere, in room temperature or be lower than the deposit of carrying out film under 500 ℃ the temperature.
According to of the present invention, be equipped with under the situation of light enhancing CVD system, even can produce deposit at the inwall of a deep trouth.The experimental result of thin-film deposition shows, has 1 micron diameter for one, the open slot of 4 micrometer depth, and when the film thickness on the horizontal surface was 0.5 micron, the film thickness on the groove inwall was 0.3 to 0.45 micron.
In addition, when deposition of semiconductor film on the transparent conductive film with reticulate structure when constituting solar cell, according to the present invention, can generate semiconductor film with rough two apparent surfaces.This film shaped shape that helps improving conversion efficiency of solar cell is owing to the characteristic of electron cyclotron resonace.
With reference now to Fig. 1,, as the first embodiment of the present invention, is equipped with the plasma CVD system of cyclotron resonance device with graphics explanation.
This system comprise one that make with stainless steel, have a cover 1 " reaction chamber 1 ', reaction compartment 1 is defined to wherein.Reaction chamber 1 ' upper section, constitute one be used for substrate 10 be fixed on the support 10 of reaction chamber 1 ' the inside '.Have the halogen lamp heater 7 of several halogen lamps 7 ' be installed in cover 1 " on.When open reaction chamber 1 ' cover 1 " time, an inlet that leads to substrate 10 is arranged.Halogen lamp heater 7 ' see through the window 19 that synthetic quartz is made from the upper end is shone substrate 10.In addition, a pair of mesh grid is set, one well heater 7 ' and substrate 10 between, another near reaction chamber 1 ' the bottom.From the frequency of power supply 6 be the high-frequency voltage of 13.56 megahertzes or volts DS be added to grid 20 and 20 '.Because the glow discharge of grid interpolar, reaction compartment begins to store plasma gas.Substrate 10 place by grid 20 and 20 ' between the influence of the caused glow discharge of electric field under.
On the other hand, from doped system 13, provide nonproductive gas to the resonance space that limits by the synthetic quartz cylinder by conduit 18.By means of the air core coil that is arranged on cylinder 29 outsides, magnetic field is added to resonance space 2.Simultaneously, from microwave oscillator 3,, the microwave of 2.45 mega hertzs is injected resonance space through shield retaining 4.Determining of the magneticflux-density that is provided is relevant with the molecular wt of nonproductive gas.Corresponding to added magnetic field, automatically determine the frequency of microwave.At nonproductive gas is under the situation of argon gas, and magnetic field is adjusted in 875 Gausses.
Exist under the condition in magnetic field by means of the effect of magnetic field and microwave, nonproductive gas is along with being energized with microwave resonance, and produces shrinking effect.Seeing that after activating fully nonproductive gas is sent to reaction compartment 1 as (for example) electronics that is energized and the ar atmo of being excited.Above grid 20, several annular nozzles 17 are installed; Process gas is introduced into the nonproductive gas stream from nozzle.
In with the interactional process of nonproductive gas, process gas is excited and is become activity.In addition, aperture plate 20 and 20 ' between apply electric field, this electric field causes glow discharge in reaction chamber.
According to experiment repeatedly as can be known, even reaction compartment is positioned at the place quite far away apart from resonance space, for example this distance is 5cm to 20cm, but that nonproductive gas remains after entering reaction compartment is active.Different with this configuration, have in the cyclotron resonant CVD device existing, resonance space and pending substrate are each other at a distance of 1cm to 4cm usually; This CVD device often causes producing rough coating.
In addition, reaction chamber and resonance spatial pressure are maintained at 1 torr to 10
-4Between the torr, better as if remaining on 0.03 torr to 0.001 torr, so that process gas is dispersed in the entire reaction space.Control valve 14 with exhaust system 11 is set up this pressure-controlling; Control valve 14 is regulated the pumping speed of the vacuum pump 9 that matches with turbomolecular pump as service pump.
Nonproductive gas also is sent to reaction compartment by homogenizer 20, so that be dispersed in entire reaction space 1 equably.Homogenizer 20 ' also play a part stops the anti-resonance space 2 that flows to of reactive gas.The nozzle 17 of process gas is positioned at the outlet side of homogenizer 20.In this structure, process gas and argon gas are mixed in the parallel quite broad zone of whole and substrate 10 fully.The equal uniform flow that contains the reactant gases of process gas and nonproductive gas, the deposit that produces film with uniform thickness.
The pressure of selective resonance space and reaction compartment is 1 torr to 10
-4Torr is if 0.03 torr to 0.001 torr is better, so that realize resonance and promote that reactive gas spreads in container.
Even nonproductive gas after 1 the path, also will keep its intensity of activation pass by (being generally 20-80 centimetre) from the resonance space to the reaction compartment.Under the situation of electron cyclotron resonace CVD, this path has only 1 to 4 centimetre, and this may be the even reason of uneven film thickness.In any case the interference between homogenizer and the nonproductive gas stream is inevitable; This interference loss the energy of nonproductive gas.Therefore, will inevitably reduce film growth rates.Because this reason, homogenizer 20 can be with separately preparation of electrode.That is, can make homogenizer 20 with the cellular quartz plate, and having the thin gate configuration of 5 centimetres of grids of 5 cm x under the cellular quartz plate.But, do not require under the inhomogeneity situation of deposit in the demanding speed of growth, homogenizer can be removed.Discharge unwanted or unnecessary gas by exhaust system 11.At the exhaust side of reaction chamber, a cushioning pocket is set, also help the even of air-flow.
Experiment 1:
This experiment is for according to the first embodiment of the present invention, deposited amorphous silicon thin film on substrate.
As the argon gas of nonproductive gas,, be sent to resonance space 2 with the flow of 50 ml/min by conduit 18.Adjustment has the microwave oscillator 3 of 200 watts of power supplys, to produce the microwave of 2.45 mega hertzs; It is general as long as the power supply between selecting 30 to 500 watts is all applicable.Magnetic induction density is 875 Gausses.On the other hand, the flow with 20 ml/min feeds reaction compartment 1 with single silane gas; In reaction compartment, total pressure remains on 0.003 torr.
On the glass plate substrate of the transparent film that coated conducts electricity, deposit is as the crystal silicon coated semiconductor of non-single crystal semiconductor.Discharge unwanted gas by exhaust system 11.As a result, with deposition speed film formers on substrate 10 of 45 dust/seconds; The temperature of substrate 10 remains on 250 ℃.This speed is independent 30 times of adopting the resulting speed of known plasma CVD (1.5 dust/second).The homogeneity aspect of climax film thickness, have that area is wide 30 centimetres for long 30 cm x, thickness is on 1 micron the film, only observe 10% thickness and rise and fall.
Then, measured the electrical property of this amorphous silicon membrane.The dark conduction rate is 2 * 10
-10Siemens (centimetre)
-1Under the irradiation with 100 milliwatt/square centimeter (AM1) standard light, the light electric conductivity is 7 * 10
-4Siemens (centimetre)
-1These numerical value are resulting poor unlike using known plasma CVD so far.When this amorphous silicon membrane is when having the solar cell of lead end, to have obtained high efficiency of conversion.
Further semiconductor film is deposited to 1 micron thickness.On film, observe several diameters and be 0.1 to 0.001 micron pore.Compare with prior art, the number of pore has reduced to 1/10.The gained result according to the present invention sees under details in a play not acted out on stage, but told through dialogues with adjusting to the electron microscope that amplifies 100 times, only finds 1 to 3 pore.
When the mixture of b silane gas or silicon single crystal gas and fluorinated silane being imported reaction compartment when replacing independent single silane, further improved deposition speed.
Experiment 2:
This tests the system with first embodiment, proves the deposit of silicon oxide film.
Argon gas and oxygen are transported to resonance space 2 as nonproductive gas by conduit 18; For each gas, flow all is 50 ml/min.Adjustment has the microwave oscillator 3 of 200 watts of power supplys, to produce the microwave of 2.45 mega hertzs; 30 watts to 500 watts the power supply that generally is used to produce microwave share.Magnetic induction density is 875 Gausses.On the other hand, the flow feeding reaction space 1 of single silane gas with 20 ml/min; Pressure in the reaction compartment remains on 0.003 torr.
Deposit silicon-dioxide or boron glass or phosphorus glass on silicon substrate, the latter is the silicon-dioxide of phosphorus or boron of having mixed.Discharge unwanted gas by exhaust system 11.As a result, with the deposition speed of 45 dust/seconds, on the substrate 10 that keeps 250 ℃ of temperature, generate thin film.This speed is only to use 30 times of the resultant speed of known plasma CVD (1.5 dust/second).Even adopt electron cyclotron CVD separately, can not reach high like this speed.
Before the present invention, people have observed a large amount of Siliciumatom groups, and it is to fail to form crystalline Siliciumatom group, have 0.01 to 0.001 micron width.But, according to the present invention, promptly use transmission type microscope, do not observe atomic group fully yet.Under 1000 angstroms thick layer insulating situations, its anti-strength of electric field is 6 * 10
6Volt/centimetre, these ordinary skills exceed 30%.
When the mixture with b silane gas or single silane gas and fluorinated silane replaces independent single silane to import reaction compartment, further increased deposition speed.
Experiment 3
This experiment is to do for generating silicon nitride film; In this experiment, except argon gas, also with ammonia as nonproductive gas input resonance space, and other steps of this experiment identical with experiment 1 basically.Import than silane gas by conduit 16 or 18 and to Duo 4 times ammonia.
Importing under the situation of ammonia by conduit 18, ammonia can replace argon gas as resonator gas.Use another kind of method, ammonia mixes simply with independent argon gas as resonator gas.But argon gas is more suitable in making resonator gas in resonance space 12 than ammonia, is resonator gas although have only argon gas, and amino molecule also can become enough active with the ar atmo collision of being excited.
Activated fully so contain the mixture of b silane gas and ammonia, and be imported into reaction compartment 1.The mixture of silicon fluoride, nitrogen and hydrogen can be used to replace described mixture.In addition, import in the reaction compartment as process gas with single silane, silicon fluoride or b silane gas respectively and carry out deposit.Pressure in the quantity of every kind of gas and the reaction compartment 1 is identical with experiment 1.As a result, to three kinds of process gas, respectively with 12 dust/seconds, the deposition speed of 18 dust/seconds and 18 dust/seconds obtains silicon nitride film.This deposition speed approximately is ten times with the resulting deposition speed of known plasma CVD; In known plasma CVD system, common speed deposition silicon nitride film with 1.5 dust/seconds.
These are deposited on has 4 * 10
15Atom/(centimetre)
3Silicon nitride films on the n type substrate of impurity concentration, 30 centimetres wide and 30 cm long have 8 * 10 respectively
11(centimetre)
-2, 9 * 10
11(centimetre)
-2With 8 * 10
11(centimetre)
-2Horizontal surface density; These values are than the value (1.5 * 10 of common prior art
11(centimetre)
-2) little by 1/3, and roughly with the independent value (8 * 10 that obtains with the ECR deposition process
11(centimetre)
-2) identical.Also obtain improved uniformity of film, wherein the fluctuating of thickness is less than 10%, and the difference of physical property is suitable on the film.
For further reducing horizontal surface density, two step sedimentations may be fit to.That is, at first use up the silicon nitride film that strengthens CVD deposition thickness 50 dust to 200 dusts, then, then, be superimposed upon on the preceding thin film with another layer of electron cyclotron resonace (ECR) CVD deposit silicon nitride film of resonance space with input microwave.
Experiment 4:
Another deposition process of this description of test silicon oxide film.Except hereinafter particularly pointing out, this method method with former experiment basically is identical.Nonproductive gas is the nitrous oxide (dinitrogen monooxide) with nitrogen dilution, rather than ammonia.Pressure in the reaction compartment 1 is 1 * 10
-3Holder is avoided the over-drastic oxidation by this condition.Process gas is silicomethane (SiH
4) gas or chlorosilane (SiH
2Cl
2).Deposition speed was 40 dust/seconds.The same with former experiment, also observe the film of deposit at recess.
Experiment 5:
This experiment is used for deposit titanium nitride film.In this experiment, its method is similar to the method for experiment 3, therefore, will only narrate and improve and differential section, and not repeat rest part.
Titanium tetrachloride gases replaces silane gas to be imported into reaction chamber.Pressure in the reaction chamber is 1 * 10
-3Torr.With the speed deposits of 40 dust/seconds titanium nitride film as product; 3 the same with experiment, at recess also deposit film.When being used as the passivation film of the physical strength that strengthens metal tools, titanium nitride is favourable.
Experiment 6:
This experiment is used for the deposit aluminium nitride film.The method of this experiment is similar to the method for experiment 3, therefore, will only narrate and improve and differential section, and rest part no longer repeats.
By conduit 16 and nozzle 17 with aluminium trimethide (Al(CH
3)
3) import as process gas.By the argon gas of conduit 18 transmission as nonproductive gas.As a result, after having carried out deposit in 30 minutes, obtain the aluminium nitride film of 4000 dust thickness.
When being used as passivation film, aluminium nitride is owing to its high heat conductivity is on a good wicket.The general characteristic of the aluminium nitride of Sheng Chenging (AlN) and silicon nitride film is similar like this.
With reference to figure 2, it represents the second embodiment of the present invention.Among the figure, the reaction chamber made from stainless steel 1 ' have a LOADED CAVITY and a non-LOADED CAVITY at its front and back, these two chambeies are all expressions in the drawings.Reaction chamber 1 ' in and the adjacent part of load cavity and unsupported chamber, constitute a reaction compartment, owing to seal into airtight construction, so process gas can not leak from reaction compartment with stainless steel wall or isolated material.Or rather, reaction compartment be limited at make the uniform a pair of homogenizer 20 of process gas and 20 ' between.Many substrates 10 be fixed on support 10 ' facing surfaces; Support 10 ' vertically be arranged in the reaction compartment 1.
In the present embodiment, ten of substrate 10 samples be attached to 5 supports 10 ' on.Reaction chamber 1 ' both sides well heater is installed, each well heater is made of several halogen lamps; Launch ultraviolet ray from these halogen lamps, pass synthetic quartz window 19, irradiation substrate 10 and reaction chamber 1 ' inside.In addition, homogenizer 20 and 20 ' play a part pair of electrodes; High-frequency voltage or volts DS from 13.56 megahertzes of power supply 6 are added on this counter electrode, and set up electric field between this counter electrode in reaction compartment.Just as shown in FIG., substrate 10 is arranged in parallel with added electric field and embarks on journey.As another selectable scheme, also can on the direction of vertical view, relatively settle these two electrodes.
From doped system 13 with nonproductive gas delivery to make of synthetic quartz, resonance space is limited to wherein cylinder 29.By means of being arranged on cylinder 29 air core coil on every side, magnetic field is added to resonance space 2.Simultaneously, from the microwave of 2.45 mega hertzs of microwave oscillator 3, inject in the resonance space 2 by shield retaining 4.With the same mode of first embodiment, argon gas is activated, and is introduced into reaction compartment 1 by homogenizer 20.
This method is substantially the same with first embodiment's, therefore saves the explanation about deposition process.
Experiment 7:
This experimental basis second embodiment of the present invention, deposited amorphous silicon thin film on substrate.
Reaction chamber 1 ' have is high 25 centimetres, wide 40 centimetres, long 40 centimetres reaction compartment.Each batch comprises 10 substrates, and every substrate is wide 20 centimetres, long 30 centimetres.The pressure of reaction compartment is 0.003 torr.Argon gas is with the flow of 200 ml/min, and silicomethane is sent to resonance space 2 with the flow of 80 ml/min as nonproductive gas.Microwave oscillator is launched the microwave of 2.45 mega hertzs, 200 watts to 800 watts (for example 400 watts).40 watts of high-frequency electric powers of power supply output.Magnetic induction density is adjusted in 875 ± 100 Gausses.
Scribbling on the glass plate substrate of nesa coating, deposit is as the amorphous silicon semiconductor film of non-single crystal semiconductor.Discharge unwanted gas by exhaust system 11.Generate film as product with the deposition speeds of 45 dust/seconds on substrate 10, the temperature of substrate 10 remains on 250 ℃.This speed is to use 30 times of the resulting speed of plasma CVD (1.5 dust/second) separately.
Then, measure the electrical characteristic of amorphous silicon membrane.The dark conduction rate is 4 * 10
-10Siemens (centimetre)
-1100 milliwatts/(centimetre)
-2(AMI) under the irradiation, the light electric conductivity is 6 * 10
-5Siemens (centimetre)
-1These data are unlike the data difference that obtains with known plasma CVD so far.When using, observe high efficiency of conversion when amorphous silicon membrane and the solar cell with lead end are integrated.
The following describes amorphous silicon is how to be used to solar cell.At first, on substrate, generate the P-type semiconductor film with known electric glow discharge method.Then, with electron cyclotron resonace CVD of the present invention one deck pure semiconductor that on P type film, superposes.At last, according to deposit one deck n N-type semiconductorN of the present invention.
Use another kind of method, can make solar cell with multi-chamber system.In this case, one or more reaction chambers of Ecr plasma CVD have been made.After the support of settling many substrates was put into the loading chamber, substrate and bracing frame were transported first reaction chamber together; In first reaction chamber, carry out the P-type semiconductor (Si of thickness 100 to 200 dusts
XC
1-X) deposit of film.Then, transported as shown in Figure 2 second reaction chamber with the support of substrate; In second reaction chamber, with electron cyclotron CVD method deposit one deck pure semiconductor film of the present invention.Then, support is transported the 3rd reaction chamber; In the 3rd reaction chamber, according to deposit one deck n type crystalline state semiconductor film of the present invention.That is, the present invention is used to pure semi-conductor of deposit and crystalline semi-conductor.
On the film that generates with the glow discharge sedimentation, have been found that the pore of 0.1 to 0.01 micron of several diameter.With prior art relatively, the number of pore is reduced to about 1/10.According to the present invention, in showing, details in a play not acted out on stage, but told through dialogues only finds 1 to 3 pore with the electron microscope that is adjusted in 100 times of amplification quantity.
When the mixture with b silane gas or silicomethane gas and fluorinated silane replaces independent silicomethane importing institute to answer the space, further improved deposition speed.
Experiment 8:
This experiment is used to generate silicon nitride film; In this experiment, except testing the configuration of 7 process, also provide ammonia as nonproductive gas.By conduit 16 or 18, import ammonia with 5 times of flows to silane.
Importing under the situation of ammonia by conduit 18, ammonia can replace argon gas as resonator gas.Use another kind of method, ammonia mixes simply with independent argon gas as resonator gas.But, argon gas is more suitable in as resonator gas than ammonia.Although argon gas is a resonator gas and ammonia is not, in resonance space 2, amino molecule is also together with the collision of activated ar atmo and activated fully.
Therefore, the mixed gas of being made up of b silane gas and ammonia is activated and is imported into reaction compartment 1 fully.Can use the mixture of silicon fluoride, nitrogen and hydrogen to replace above-mentioned mixed gas.Then,, import reaction compartment and carry out deposit as process gas with silyl fluoride, silicon fluoride or silicoethane.The flow of every kind of gas and the pressure in the reaction compartment are identical with experiment 1.As a result, for three kinds of process gas, respectively with 12 dust/seconds, the deposition speed of 18 dust/seconds and 18 dust/seconds obtains silicon nitride film.These deposition speeds approximate ten times with the resultant speed of known plasma CVD method; In known plasma CVD, common speed deposition silicon nitride film with 1.5 dust/seconds.
Two step sedimentations are applicable to further reducing horizontal surface density.Promptly at first use up and strengthen the silicon nitride film that the CVD deposit has 50 to 200 dust thickness; Then, then, be superimposed upon on the film of deposit in the past with another layer of electron cyclotron resonace (ECR) CVD deposit silicon nitride film with microwave enhancing resonance space.
Experiment 9:
The another kind of silica membrane deposition process of this description of test.Except hereinafter particularly pointing out, this process experimentation with former basically is identical.Nonproductive gas is with nitrous oxide gas behind the nitrogen dilution rather than ammonia.Pressure in the reaction compartment 1 is 1 * 10
-3Torr stops over oxidation whereby.Process gas is silicomethane (SiH
4) gas or chlorinated silane (SiH
2Cl
2).Deposition speed was 40 dust/seconds.Identical as in the former experiment also observes the film of institute's deposit at recess.
Experiment 10:
This experiment relates to the deposit of titanium nitride.Therefore its process, only will disclose and test 8 different steps, and not repeat rest part to carry out with the 8 identical modes of experiment.
In this experiment, the titanium chloride of using nitrogen dilution is imported into reaction compartment 1 by conduit 16 from nozzle 17.The mixed gas of nitrogen and hydrogen also is imported into resonance space 2 with argon gas together.As a result, by 10 minutes deposition process, deposit have a titanium nitride membrane of 4000 dust thickness.
Titanium nitride membrane is favourable aspect resistance to abrasion.The gloss of the film that obtains according to the present invention is equivalent to the result that obtains with first system technology.
Referring now to Fig. 3, illustrate that the cyclotron resonance type light as the 3rd embodiment strengthens the CVD system.
In the drawings, the reaction chamber of making by stainless steel 1 ' in constitute reaction compartment 1.Reaction chamber 1 ' the top install the well heater 7 that gets up by several halogen lamps 7 equipments '.By support 10 ' constitute two relative sidewalls of reaction chamber; With support 10 ' with substrate 10 be supported on well heater 7 ' under.Infrared rays by halogen lamp 7 ' emission passes the window made from synthetic quartz 19, heated substrate 10.In the bottom of reaction chamber 1, with several Cooper-Hewitt lamps 6 equipment light source chambers 6 '.By light source 6 ' in the ultraviolet ray of mercuryvapour lamp 6 emission pass the light window made by the synthetic quartz bottom surface of irradiation substrate 10 again; The light window has high transmissivity in short wavelength range.Cooper-Hewitt lamp be used for greater than 5 milliwatts/(centimetre)
2Irradiance (preferably with 185 millimicrons of wavelength 10-100 milliwatts/(centimetre)
2Irradiance) irradiation substrate 10.
On the other hand, nonproductive gas is imported the resonator cavity made from synthetic quartz 2 from doped system by conduit 18.Resonator cavity 2 be equipped with air core coil 5 and 5 '; In resonator cavity, produce magnetic field by air core coil.In addition, by shield retaining 4 microwave of 2.45 mega hertzs is transported to resonator cavity from vibrator 3.All the time determine magneticstrength and microwave frequency according to the molecular weight of nonproductive gas.If use argon gas as nonproductive gas, magneticstrength can be 875 Gausses.Microwave frequency during with hydrogen is automatically calculated.
By means of magnetic field, nonproductive gas and microwave resonance, and therefore increase energy, be pinched in the resonator cavity.Then, the nonproductive gas that is activated is by as the dividing plate 20 of homogenizer ' be admitted to reaction compartment 1.Process gas also passes through annular nozzle 17 from doped system, the reaction compartment 1 of being released.As a result, activate process gas with the nonproductive gas that is activated.In addition, also give process gas energy by ultraviolet irradiation.
According to experimental result, quite far away even reaction compartment leaves resonance space, for example distance is 5 to 20 centimetres, and it is active that nonproductive gas remains in reaction compartment.Different with this structure, according to widely used existing CVD device with cyclotron resonance, general resonance space and apart 1 to 4 centimetre of pending substrate, this often causes producing rough coating.
In addition, with reaction chamber and resonance spatial pressure-controlling 1 to 10
-4Torr preferably is controlled at 0.03 to 0.001 torr, so that process gas can easily be dispersed in the entire reaction space.The control valve 14 of exhaust system 11 is regulated and deflation rate as the vacuum pump 9 of turbomolecular pump (the not expressing in the drawings) coupling of service pump, to realize pressure-controlling.
Nonproductive gas is also by homogenizer 20 ' be sent to reaction compartment 1, so that make it be dispersed in entire reaction space 1.For the used nozzle 17 of process gas is positioned at the downstream of the process gas of being supplied with, as seeing from homogenizer.In this structure, on the whole broad plane that is parallel to substrate, process gas and argon gas mix each other fully.Comprise that the equal uniform flow of the reactant gases of process gas and nonproductive gas has the deposit of the film of uniform thickness subsequently.
Much less, the interference between homogenizer 20 ' nonproductive gas stream is inevitably, thus loss the energy of nonproductive gas.Therefore, formation speed certainly will will reduce.For this reason, at the high formation speed of needs rather than require the inhomogeneity occasion of deposit, can remove homogenizer.Discharge unwanted or unnecessary gas by exhaust system 11.
Experiment 11:
This experiment is according to third embodiment of the present invention deposited amorphous silicon thin film.
In this experiment, with argon gas as nonproductive gas, with the flow volume delivery of 50 ml/min to reaction compartment; And silicomethane is imported reaction compartment simultaneously with the flow of 20 ml/min, mix with argon gas.Pressure in the reaction chamber is maintained at 0.002 torr.Produce the ultraviolet irradiation of 185 millimicrons of wavelength with Cooper-Hewitt lamp.Shaking with 30 to 500 watts power adjustment microwaves, to make its frequency be 2.45 mega hertzs to device, and the most handy 30 to 200 watts power supply is regulated.With the corresponding magnetic induction density of the microwave of this frequency, be chosen as 875 Gausses.
Amorphous silicon membrane is deposited on the glass substrate of coated transparent conductive film.During the non-crystalline silicon of deposit, discharge unwanted gas by exhaust system as non-monocrystalline silicon.As a result, under 250 ℃ of temperature, deposition speed was 13 dust/seconds.This speed is to use up 40 times that strengthen the resulting speed of CVD.The surface of transparent film has reticulate structure, is rough surface.And on this rough surface, carried out deposit equally.
The dark-conductivity of the amorphous silicon membrane of Sheng Chenging is 3 * 10 like this
-10Siemens (centimetre)
-1With respect to the AM1(100 milliwatt/(centimetre)
2) standard light, the photoconductivity of amorphous silicon membrane is 6 * 10
-5Siemens (centimetre)
-1These numerical value are equivalent to the numerical value that existing amorphous solar cell reaches basically.Use solar cell, have and be not less than the efficiency of conversion that obtains with prior art according to noncrystal membrane of the present invention equipment.
In addition, on the semiconductor film that is deposited to 1 micron thickness, observe the pore of 0.1 to 0.001 micron of several diameter.Compare the reduced number to 1/10 of pore with prior art.See under details in a play not acted out on stage, but told through dialogues with the electron microscope that amplifies 100 times and only to find 1 to 3 pore.
When the mixed gas with b silane gas or silicomethane gas and fluorinated silane replaces independent silicomethane gas to import reaction compartment, further improved deposition speed.
Experiment 12:
This experiment is used to generate silicon nitride film; In this experiment, except argon gas, ammonia also is used as nonproductive gas and sends in the resonance space; Other processes of this experiment basically with the experiment 11 identical.By conduit 16 or 18, the ammonia amount of importing is 5 times of silane import volume.
When importing ammonia by conduit 18, ammonia can replace argon gas as resonator gas.Another kind method is mixed ammonia simply with independent argon gas as resonator gas.But argon gas is more suitable in as resonator gas than ammonia.Although having only argon gas is resonator gas, and amino molecule collides with the hydrogen atom of being excited in resonance space 2, thereby is also activated fully.
Therefore, the mixed gas that comprises b silane gas and ammonia is activated fully and is imported in the reaction compartment 1.The mixed gas of silicon fluoride, nitrogen and hydrogen can be used to replace above-mentioned mixed gas.In addition, use silicomethane respectively, silicon fluoride or silicoethane import reaction compartment as process gas and carry out deposit.Identical in pressure in every kind of gas volume and the reaction compartment 1 and the experiment 1.As a result, for three kinds of process gas, respectively with 12 dust/seconds, the deposition speed of 18 dust/seconds and 18 dust/seconds obtains silicon nitride film.These deposition speeds approximately are ten times with the resulting speed of known plasma CVD; In known plasma CVD, common speed deposit silicon nitride with 1.5 dust/seconds.
Have 4 * 10
15Atom/centimetre
3The n type substrate of impurity concentration on these 30 centimetres wide and the silicon nitride film of 30 cm long, have 8 * 10 respectively
11(centimetre)
-2, 9 * 10
11(centimetre)
-2With 8 * 10
11(centimetre)
-2Horizontal surface density, this is less than common prior art value (1.5 * 10
12) 1/3, and roughly with independent use electron cyclotron resonace sedimentation income value (8 * 10
12) identical.And uniformity of film also is improved, and its thickness rises and falls less than 10%, and the difference of physical property is suitable on the film.
Can adopt two step sedimentations for further reducing horizontal surface density.That is, at first use up the silicon nitride film that enhancing CVD deposit has 50 to 200 dust thickness, then, then strengthen another layer of ECR CVD deposit silicon nitride film, be superimposed upon on the film of deposit in the past with microwave with resonance space.
Experiment 13:
This experiment is used to generate silicon nitride film; In this experiment, except testing 10 configuration, also ammonia is supplied as nonproductive gas, it is by conduit 16 or 18, with 5 times of flows importing ammonias to silane.
When importing ammonia by conduit 18, ammonia can replace argon gas as resonator gas.Another kind method is mixed ammonia simply with independent argon gas as resonator gas.But argon gas is more suitable in as resonator gas than ammonia.Although having only argon gas is resonator gas, and amino molecule also collides with the ar atmo of being excited in resonance space 2, and is activated fully.
Therefore, the mixed gas that comprises silicoethane and ammonia is activated fully and is imported in the reaction compartment 1.The mixed gas of also available silicon fluoride, nitrogen and hydrogen replaces above-mentioned mixed gas.In addition, silicomethane, silicon fluoride or b silane gas are imported reaction compartment as process gas.Pressure in the content of every kind of gas and the reaction compartment 1 is identical with experiment 10.As a result, for three kinds of process gas, respectively with 12 dust/seconds, the deposition speed of 18 dust/seconds and 18 dust/seconds obtains silicon nitride film.These deposition speeds are to use up to strengthen more than 20 times of CVD gained speed; Strengthen among the CVD common speed deposition silicon nitride film with 0.3 dust/second at light.
Have 4 * 10
15Atom/centimetre
3These silicon nitride films on the n type substrate of impurity concentration have 2 * 10 respectively
11(centimetre)
-2, 2.5 * 10
11(centimetre)
-2With 2.5 * 10
11(centimetre)
-2Horizontal surface density, though this is greater than strengthening the resulting numerical value of CVD with the light that has earlier, less than with common prior art plasma CVD income value 1/7 and have 1/4 of cyclotron resonant CVD income value less than usefulness.
Can adopt two step sedimentations for further reducing horizontal surface density.That is, at first use up the silicon nitride film that enhancing CVD deposit has 50 to 200 dust thickness, then, then strengthen another layer of ECR CVD method deposit silicon nitride film, be superimposed upon on the film of deposit in the past with microwave with resonance space.
Equally has the deposit that has realized silicon nitride film on 1.5 microns wide and the 4 micrometers deep trench substrates.Give the fixed film that generates 0.3 micron thickness by deposit.In groove, obtain having the silicon nitride film of 0.3 micron thickness.
Experiment 14:
The another kind of deposition process of this description of test silicon oxide film.Except hereinafter particularly pointing out, present method method with last experiment basically is identical.Oxidation b silane gas with nitrogen dilution replaces ammonia as nonproductive gas.Pressure in the reaction compartment 1 is 1 * 10
-3Torr prevents over oxidation whereby.Process gas is silicomethane (SiH
4) gas or chlorinated silane gas (SiH
2Cl
2).Deposition speed was 20 dust/seconds.The same with in the last experiment also observed the film of deposit at recess.
Experiment 15:
This experiment is used for the deposit aluminium nitride film.The method of this experiment is similar with experiment 14, therefore will only narrate improved and different piece, and rest part does not repeat.
Import trimethyl aluminium (Al(CH by conduit 16 and nozzle 17
3)
3) as process gas.By the argon gas of conduit 18 conveyings as nonproductive gas.As a result, after deposit in 10 minutes, obtain the aluminium film of 700 dust thickness.
In the present embodiment, even generate aluminium nitride film at window 20, it also will not hinder the ultraviolet optical transmission, because the energy gap of aluminium nitride is 6 electron-volts.This makes might make separately to use up and strengthens a kind of luminous reflectance protective film with adequate thickness of CVD generation.
Aluminium nitride is because its high heat conductivity, thereby is favourable when quilt is used as passive film.The general property of the aluminium nitride of Sheng Chenging (AlN) is similar to silicon nitride film like this.
When we illustrate particularly and narrate most preferred embodiment of the present invention, the professional in present technique field will understand, under the situation of the spirit and scope of the present invention, can be exemplified below making various changes on its form and the details:
Before actual deposition film, can import Nitrogen trifluoride (NF by the nozzle shown in Fig. 3 17
2) gas, hydrogen (H
2) or nitrogen (N
2), clean with the optics that carries out substrate surface, making to produce becomes repeatably.This optics cleans can use active hydrogen atom, also can carry out with active fluorine atom or chlorine atom.Optics by means of fluorine or chlorine cleans, can be from surface removal oxide compound or other dust.In addition, optics cleans the oxide-free film that forms the antioxygen G﹠W from the teeth outwards.This optics cleans the high quality that has guaranteed deposition film, because tend to damage deposition process from the oil vapour pollution of exhaust system.
Excimer laser (100 to 400 millimicrons of wavelength), argon laser, nitrogen laser or the like can be used as light source of the present invention.
Substrate can be a sheet glass, stainless steel plate or deposit III thereon-V family semiconductor compound such as gallium arsenide (Ga As), aluminum gallium arsenide (Ga Al As), the silicon semiconductor substrate of indium phosphide (In P) or gan (Ga N) or the like.
Strengthen CVD and carry out Al when using up, PSG, BSG, Ga N during the deposit of Ga P or AlP, can use Al(CH respectively
3)
3, Si
2H
6And O
2And PH
3(or P
2H
6) synthetics Ga(CH
3)
3And NH
3Synthetics, Ga(CH
3)
3And PH
3Synthetics or Al(CH
3)
3And PH
3Synthetics as process gas.
Amorphous semiconductor SiGe
1-X(0＜X＜1), SiO
2-X(0＜X＜2), SiC
1-X(0＜X＜1), Si
3N
4-X(0＜X＜4) can replace amorphous silicon semiconductor.
When applying the present invention to metal insulator silicon (MIS) type light emitting devices, field-effect transistor (FETs), super brilliant gate device (super lattice devices), the HEMT device, semiconductor laser during optic integrated circuit or the like, also is extremely favourable.
Though more than narrated the desirable cyclotron resonance deposition system that utilizes magnetic field with suitable adjustment and corresponding tuning microwave,, can only utilize microwave fully to encourage nonproductive gas, thereby obtain fast deposition speed.
Claims (16)
1, microwave enhanced CVD (chemical vapour deposition) system is characterised in that to comprise:
-one CVD device, its by a reaction chamber, be used for process gas introduce described reaction chamber device, be used to provide the device (this energy is necessary by realize the deposit reaction in reaction chamber) of energy and the device of the described reaction chamber that is used to find time is formed; With
-one process gas intensifier, it comprises a device that strengthens the chamber, is used for the inside of described enhancing chamber is provided magnetic field, is used for that microwave sent to the indoor device of described enhancing and is used for process gas is introduced the device of described enhancing chamber,
During described reaction chamber and described enhancing chamber are in and keep in touch each other.
2, according to the microwave enhanced CVD system of claim 1, be characterised in that wherein said reaction chamber and described enhancing chamber are directly connected to each other, so that can enter the inside of described reaction chamber in large quantities by resonance activated process gas.
3, according to the microwave enhanced CVD system of claim 1, be characterised in that wherein said enhancing chamber is to stretch out from described reaction chamber.
4, according to the microwave enhanced CVD system of claim 3, be characterised in that wherein said enhancing chamber be one substantially perpendicular to the cylinder that stretches out the surface of described reaction chamber.
5, according to the microwave enhanced CVD system of claim 4, be characterised in that also to comprise a homogenizer that this homogenizer is contained between the reaction generating area of the resonance zone of described enhancing chamber and described reaction chamber.
6, according to the microwave enhanced CVD system of claim 5, be characterised in that the introducing device of wherein said process gas has a plurality of outlets, look that these outlets are placed in the bottom from described homogenizer.
7,, be characterised in that wherein said homogenizer is one and has porous flat board perhaps according to the microwave enhanced CVD system of claim 5.
8, according to the microwave enhanced CVD system of claim 1, be characterised in that the CVD system that wherein said CVD device is a glow discharge.
9, according to the microwave enhanced CVD system of claim 1, be characterised in that wherein said CVD device is an optical enhancement type CVD system.
10,, be characterised in that the wherein said process gas that will guide in the described resonator cavity comprises rare gas element according to the microwave enhanced CVD system of claim 1.
11, according to the microwave enhanced CVD system of claim 10, be characterised in that wherein said rare gas element is an argon gas.
12, according to the microwave enhanced CVD system of claim 1, be characterised in that the base material of wherein treating deposit is a kind of amorphous semiconductor.
13, according to the microwave enhanced CVD system of claim 12, be characterised in that wherein said amorphous semiconductor is a non-crystalline silicon.
14, according to the microwave enhanced CVD system of claim 1, be characterised in that the wherein said process gas that is introduced in described reaction chamber is a kind of hydride.
15, according to the microwave enhanced CVD system of claim 1, be characterised in that wherein said process gas is a kind of fluorine water thing.
16, use the deposition process of the microwave enhanced CVD system of claim 1, be characterised in that wherein and carry out optical surface and to handle for carrying out sedimentary matrix before deposition.
Applications Claiming Priority (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP228082/85 | 1985-10-14 | ||
| JP228077/85 | 1985-10-14 | ||
| JP228083/85 | 1985-10-14 | ||
| JP60228080A JPS6289874A (en) | 1985-10-14 | 1985-10-14 | Formation of thin film |
| JP60228078A JPS6286166A (en) | 1985-10-14 | 1985-10-14 | Formation of thin film |
| JP228078/85 | 1985-10-14 | ||
| JP228080/85 | 1985-10-14 | ||
| JP22807785A JPS6286165A (en) | 1985-10-14 | 1985-10-14 | Formation of thin film |
| JP22808285A JPS6289875A (en) | 1985-10-14 | 1985-10-14 | Thin film forming device |
| JP60228083A JPS6289876A (en) | 1985-10-14 | 1985-10-14 | Formation of thin film |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN94106740A Division CN1053229C (en) | 1985-10-14 | 1994-06-21 | Microwave enhanced CVD system under magnetic field |
| CN94106741A Division CN1053230C (en) | 1985-10-14 | 1994-06-21 | Microwave enhanced cvd system under magnetic field |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN86106620A true CN86106620A (en) | 1987-07-08 |
| CN1027549C CN1027549C (en) | 1995-02-01 |
Family
ID=27529825
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN86106620A Expired - Lifetime CN1027549C (en) | 1985-10-14 | 1986-10-14 | Microwave enhanced CVD system under magnetic field |
| CN94106741A Expired - Lifetime CN1053230C (en) | 1985-10-14 | 1994-06-21 | Microwave enhanced cvd system under magnetic field |
| CN94106740A Expired - Lifetime CN1053229C (en) | 1985-10-14 | 1994-06-21 | Microwave enhanced CVD system under magnetic field |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN94106741A Expired - Lifetime CN1053230C (en) | 1985-10-14 | 1994-06-21 | Microwave enhanced cvd system under magnetic field |
| CN94106740A Expired - Lifetime CN1053229C (en) | 1985-10-14 | 1994-06-21 | Microwave enhanced CVD system under magnetic field |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR920000591B1 (en) |
| CN (3) | CN1027549C (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6853141B2 (en) * | 2002-05-22 | 2005-02-08 | Daniel J. Hoffman | Capacitively coupled plasma reactor with magnetic plasma control |
| JP4770029B2 (en) * | 2001-01-22 | 2011-09-07 | 株式会社Ｉｈｉ | Plasma CVD apparatus and solar cell manufacturing method |
| DE10341239B4 (en) * | 2003-09-08 | 2006-05-24 | Roth & Rau Ag | ECR plasma source with linear plasma outlet |
| DE102006037144B4 (en) * | 2006-08-09 | 2010-05-20 | Roth & Rau Ag | ECR plasma source |
| CN102290313B (en) * | 2011-09-26 | 2013-06-05 | 中国科学院微电子研究所 | Non-metallic vacuum chamber structure |
| CN103602957A (en) * | 2013-11-07 | 2014-02-26 | 中山市创科科研技术服务有限公司 | Equipment for preparing alpha_SiH membrane |
| US20220199379A1 (en) * | 2019-04-26 | 2022-06-23 | Lam Research Corporation | High temperature heating of a substrate in a processing chamber |
| CN110396675B (en) * | 2019-07-10 | 2021-12-31 | 中国科学院电工研究所 | Preparation method of plasma enhanced chemical vapor deposition metal film |
| CN115679443B (en) * | 2021-12-02 | 2023-06-30 | 北京大学 | Light-assisted metal organic compound chemical vapor deposition device and implementation method |
-
1986
- 1986-10-14 CN CN86106620A patent/CN1027549C/en not_active Expired - Lifetime
- 1986-10-14 KR KR1019860008597A patent/KR920000591B1/en not_active IP Right Cessation
-
1994
- 1994-06-21 CN CN94106741A patent/CN1053230C/en not_active Expired - Lifetime
- 1994-06-21 CN CN94106740A patent/CN1053229C/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR920000591B1 (en) | 1992-01-16 |
| CN1102034A (en) | 1995-04-26 |
| CN1098243A (en) | 1995-02-01 |
| KR870004497A (en) | 1987-05-09 |
| CN1053229C (en) | 2000-06-07 |
| CN1027549C (en) | 1995-02-01 |
| CN1053230C (en) | 2000-06-07 |
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