CN1807681A - Evaporating device and method utilizing same - Google Patents
Evaporating device and method utilizing same Download PDFInfo
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- CN1807681A CN1807681A CNA2006100063966A CN200610006396A CN1807681A CN 1807681 A CN1807681 A CN 1807681A CN A2006100063966 A CNA2006100063966 A CN A2006100063966A CN 200610006396 A CN200610006396 A CN 200610006396A CN 1807681 A CN1807681 A CN 1807681A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
- F04D17/08—Centrifugal pumps
- F04D17/16—Centrifugal pumps for displacing without appreciable compression
- F04D17/168—Pumps specially adapted to produce a vacuum
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Abstract
The invention discloses an evaporation equipment and the method thereof. The evaporation equipment decomposes the gas which requires high energy through plasma decomposition and heating, and decomposes the gas which requires less energy through heating; in this way, an evaporation body is developed on the substrate. When molding an insulating film with a current ICP-CVD device or a PEVCD plasma device, the source gas is difficult to be totally decomposed, which impairs the property of the evaporation body and leads to low service efficiency of the source gas. In the purpose of avoiding the above defects, the invention provides an evaporation equipment with plasma and/ or heating working modes and an evaporation method thereof.
Description
Technical field
The present invention relates to evaporation coating method, in further detail, relate to use utilize plasma body mode or/and utilize the mixed chemical vapor coating device of the mode of heating member, on substrate, form the evaporation coating device of evaporation thing and the evaporation coating method that utilizes this evaporation coating device.
Background technology
Plasma environment is used in the field relevant with film such as chemical vapor coating and etching, surface treatment variedly.This is owing to have following advantage: plasmoid has and can improve reaction efficiency in these operations, can carry out operation under advantageous conditions.
According to the difference of the purpose of utilizing plasma body, isoionic formation method is also varied, so plasma body formation device is also just being developed variedly.Recently, in semi-conductor manufacturing process etc., utilize the situation of using the plasma processing apparatus that the high density plasma that can further improve process efficiency is arranged to increase.In the high density plasma treatment unit, have the microwave that utilizes resonant frequency ECR (Electron Cyclotron Resonance: electron cyclotron resonace) plasma processing apparatus, utilize the spiral plasma processing apparatus of spiral (helicon) ripple or whistler wave (whistler wave) and utilize high-temperature low-pressure plasma body induce coupled mode (inductively coupled) plasma processing apparatus etc.
In chemical vapor coating (the Chemical Vapor Deposition) device, being suitable for the described sectional view of the ICP-CVD (Induced Couple Plasma Chemical VaporDeposition) of coupled mode plasma processing apparatus of inducing represents with reference to Fig. 1, it is made of isolator, has the chamber (Chamber) 101 that can keep vacuum, arranges and produce the antenna 102 of inducing lotus root mould assembly plasma body in the upper end of above-mentioned chamber 101 regularly.At this moment, on described antenna 102, be connected with first power supply 103 of supply power.
Be provided with gas inlet 105 to chamber 101 inner injecting gas 104 in the bottom of described antenna 102.At this moment, described gas inlet 105 is formed by shower nozzle usually, and this is for can be to the plasma body that is formed by described antenna 102 supply gas 104 equably.
Be provided with in the bottom of described chamber 101 to the object being treated of handling by described ICP-CVD device be that substrate 106 heats, cooling or fixed anchor clamps 107, and link the second source 108 of oriented described anchor clamps 107 supply powers.At this moment, described second source 108 can be used as and is used to heat the power supply of described anchor clamps 107 or is used to give the power supply of described anchor clamps 107 with electrode function.
The sidewall of described chamber 101 is set up to be useful on described substrate 106 is moved to described chamber 101 inside or outside door 109, and sets up the venting port 111 that contains the vacuum pump 110 that the air or the gas of described chamber 101 are discharged.
But, described chemical gas phase device is owing to only utilize plasma mode evaporation insulating film, so can not carry out the decomposition of source gas in good condition, not only the service efficiency of source gas is low, and on the insulating film that forms, contain a large amount of hydrogen, be difficult to obtain high-quality insulating film.
Summary of the invention
Therefore, the present invention researches and develops in order to solve above-mentioned of the prior art many shortcomings and problem points, the evaporation coating method that its purpose is to provide a kind of evaporation coating device and utilizes this evaporation coating device, in this evaporation coating device, decomposing the high relatively gas of needed ability utilizes plasma decomposes mode and heating member mode to decompose, decompose the low relatively gas of needed ability and utilize the heating member mode to decompose, on substrate, form the evaporation thing thus.
Above-mentioned purpose of the present invention realizes that by following evaporation coating device promptly this evaporation coating device comprises: the substrate that carries out the growth of vapor-deposited film; The strainer that on film forming opposing face of described substrate, constitutes; And, the energy supply source that constitutes to described vapor-deposited film energize via described strainer.
In addition, above-mentioned purpose of the present invention realizes by following structure that also promptly, a kind of evaporation coating device comprises: chamber; Be positioned at the shower nozzle in the regulation zone of described chamber interior; The anchor clamps of substrate are equipped with in corresponding setting with described shower nozzle from the teeth outwards; And, the heating member between described shower nozzle and anchor clamps, described shower nozzle comprises: the first gas inlet and the second gas inlet; Cavity with the described shower nozzle of described first gas inlet banded inside; Link with described cavity, be positioned at a plurality of first nozzles on the surface of the shower nozzle corresponding with described anchor clamps; And, link with the described second gas inlet, be positioned at a plurality of second nozzles on the surface of the shower nozzle corresponding with described anchor clamps.
Above-mentioned purpose of the present invention realizes that by following evaporation coating device promptly this evaporation coating device comprises: chamber; Be positioned at the shower nozzle in the regulation zone of described chamber interior; Corresponding setting with described shower nozzle, the strainer that substrate is housed from the teeth outwards and is positioned at this substrate bottom constitutes the anchor clamps to the energy supply source of described substrate energize; And, the heating member between described shower nozzle and anchor clamps, described shower nozzle comprises: the first gas inlet and the second gas inlet; Cavity with the described shower nozzle of described first gas inlet banded inside; Link with described cavity, be positioned at a plurality of first nozzles on the surface of the shower nozzle corresponding with described anchor clamps; And, link with the described second gas inlet, be positioned at a plurality of second nozzles on the surface of the shower nozzle corresponding with described anchor clamps.
In addition, above-mentioned purpose of the present invention also can realize by following evaporation coating method, it has the energy of supplying with described vapor-deposited film at the selective wavelength energy of described vapor-deposited film is supplied with the stage in the vacuum evaporation operation that is made of stage that the chamber interior exhaust is become vacuum and the stage of vapor-deposited film being carried out evaporation after described chamber interior exhaust is become vacuum.
In addition, above-mentioned purpose of the present invention also can realize that it comprises by following evaporation coating method: in the stage of the chamber interior mounting substrate with plasma generation area and heating member; Supply with the stage of first gas and second gas to described chamber; Described first gas forms first group by described plasma generation area and heating member, and described second gas forms the stage of second group by described heating member; Described first group and second radical reaction and on described substrate, form stage of vapor-deposited film.
In addition, above-mentioned purpose of the present invention also can realize that it comprises by following evaporation coating method: in the stage of the chamber interior mounting substrate with plasma generation area and heating member; Supply with the stage of first gas and second gas to described chamber; Described first gas forms first group by described plasma generation area and heating member, and described second gas forms the stage of second group by described heating member; Described first group and second radical reaction and on described substrate, form vapor-deposited film, and supply with stage at the selective wavelength energy of described vapor-deposited film to described vapor-deposited film.
The invention effect
Therefore, evaporation coating device of the present invention and utilize the evaporation coating method of this evaporation coating device to have following effect: by carry out the decomposition of source gas almost ideally, the characteristic good of evaporation thing but also the maximization of the service efficiency of source gas can be able to be accessed high-quality vapor-deposited film by only utilizing plasma mode or heating member mode not only.
In addition, by the energy supply source is set, also has the vapor-deposited film energize that can on substrate, form on anchor clamps, make crystallization or the annealing operation effect easily that becomes.
Description of drawings
Fig. 1 is the sectional view of the chemical vapor coating device of prior art;
Fig. 2 is the sectional view of the evaporation coating device of an embodiment of the present invention;
Fig. 3 A, Fig. 3 B are the amplification profiles of anchor clamps of the evaporation coating device of an embodiment of the present invention;
Fig. 4 A, Fig. 4 B utilize the evaporation coating device of embodiment of the present invention to form the sectional view of the embodiment of vapor-deposited film.
Nomenclature
211: shower nozzle
212: the cavity
213: the first gas inlets
214: the second gas inlets
215: the first nozzles
216: the second nozzles
218: negative electrode
231: anchor clamps
232: substrate
301: the first insulating films
302: the second insulating films
Embodiment
About above-mentioned purpose of the present invention and technical pattern and based on the detailed item of its action effect, by with reference to ideal embodiment of the present invention is carried out the following detailed explanation of illustrated accompanying drawing and can understand clearly.In addition, in the accompanying drawings, for convenience of explanation and with the performance large such as length, thickness in layer and zone.In whole specification sheets, the textural element that identical symbolic representation is identical.
Fig. 2 is the sectional view of the evaporation coating device of an embodiment of the present invention.
At this moment, described evaporation coating device is the device that can carry out plasma mode and heating member mode simultaneously.
With reference to Fig. 2, evaporation coating device of the present invention is provided with chamber 201, is positioned at the shower nozzle 211 in the regulation zone of these chamber 201 inside, heating member 221 and anchor clamps 231.At this moment, described chamber 201 is with the relative outside atmosphere sealing in internal space.The venting port 203 that contains the vacuum pump 202 of the vacuum tightness of keeping described chamber 201 inside links setting with described chamber 201.
In addition, described shower nozzle 211 has cavity 212, the first gas inlet 213 and the second gas inlet 214 as plasma generation area.Side surface at described shower nozzle 211 is provided with the described first gas inlet 213, be provided with on the opposite side surface with described empty 212 banded, first nozzle 215 and with the described second gas inlet, 214 banded, second nozzle 216.At this moment, be provided with and outside first power supply, 217 banded electrodes 218 at a side surface of described empty 212.In addition, described empty 212 are formed on described shower nozzle 211 inside, are isolated by described shower nozzle 211 at the described empty 212 inner plasma bodys that produce, and therefore described plasma body can not impact other zones.
In addition, described heating member 221 and outside power supply 222 bindings.
Described anchor clamps 231 can be at surface mounting substrate 232.
At this moment, described shower nozzle 211 possesses the first gas inlet 213 and the second gas inlet 214 that is used for from outside injecting gas, the described first gas inlet 213 is used to inject the required first higher relatively gas of energy of decomposition, and described gas inlet 214 is used to inject the required second relatively low gas of energy of decomposition.
Described " decomposing required energy " is meant that the gas that is injected in the evaporation coating device supplies with a large amount of atom bonded molecularities, and the gas of such molecularity decomposes with atomic condition or required energy during ionization.For example, silane (SiH
4) situation of gas, a Siliciumatom and four hydrogen atom bonded forms, will can be described as " decomposing required energy " from the energy that described silane gas decomposes hydrogen.
At this moment, at the gas ammonia (NH of described injection
3) and the situation of silane gas under, described first gas is to decompose the required relative higher gas of energy owing to comparing with described second gas, so adopt ammonia, be to decompose the required relatively low gas of energy because described second gas is compared with described first gas, so adopt silane gas.Promptly, the kind of described first gas and second gas is which kind of gas determines according to described first gas and second gas, but described first gas is compared the required relative higher gas of energy of decomposition with second gas be first gas, and decomposing the required relatively low gas of energy is second gas.
At this moment, it is described empty 212 that first gas that is injected into the described first gas inlet 213 is injected into plasma generation area, owing to described empty 212 being to be installed on the inner lip-deep electrode in cavity 218 to utilize from first power supply 217 of outside and supply with the plasma body zone that the power supply that is subjected to produces, so first gas of described injection partly is decomposed by described plasma body.
Described first gas by the shower nozzle 211 corresponding with described anchor clamps 231 a plurality of first nozzles 215 that the surface possessed and to chamber 201 internal spray.
By the heating member 221 of first gas process between described shower nozzle 211 and anchor clamps 231 of described first nozzle 215 injections, and, almost do not decomposed fully by described heating member 221 by first gas of described plasma decomposes, form first group.At this moment, described heating member 221 is the filaments that are made of tungsten, utilizes the power supply that applies from the second source 222 of outside and produces heat more than or equal to 1000 ℃ of gases (being preferably 1500 ℃), makes described first decomposing gas by this heat.
In addition, second gas that is injected into described second inlet is not injected into described empty 212, but second nozzle 216 that is possessed from shower nozzle 211 surfaces corresponding with described anchor clamps 231 is to anchor clamps 201 inner directs, the described second injected gas is through described heating member 221, and is decomposed and becomes second group.
Therefore, first gas that injects the described first gas inlet 213 is cavity 212 through plasma generation area and decomposes specified amount, spray in anchor clamps 201 by first nozzle ejection, then, through heating member 221 and decomposition again, form first group, second gas that injects the described second gas inlet 214 directly sprays in chamber 210 via second nozzle 216, the second injected gas utilizes described heating member 221 and decomposes, form second group, described first group and second radical reaction form the film of stipulating on described substrate 232.(at this moment, described film can adopt big quantity of material, but suitably selects described first gas and second gas, not only can form insulating film and can also form conductive membranes).At this moment, be respectively under the situation of ammonia and silane gas at described first gas and second gas, can be on described substrate 232 the evaporation silicon nitride film.At this moment, described first gas and second gas are respectively under the situation of ammonia and silane gas, described ammonia and silane contain hydrogen, are difficult to decompose fully (particularly decomposing the high ammonia of required energy) by general evaporation coating device, contain hydrogen in formed silicon nitride film inside.The described silicon nitride film that contains hydrogen generates water owing to described hydrogen combines with oxygen, causes detrimentally affect to desiring by other elements of described silicon nitride film protection, and the amount of pretending hydrogen in the silicon nitride film must minimize.At this moment, in the present invention, carry out twice decomposition, nitrogen and hydrogen are almost completely decomposed, have the minimized advantage of hydrogen amount that makes in the silicon nitride film by decomposing the high ammonia of required energy.
At this moment, described first nozzle 215 can uniformly-spaced dispose on the surface of described shower nozzle 211, when needing, then for the uniformity coefficient of the insulating film of formation on the described substrate 232, can regulate the interval of described first nozzle 215.Described second nozzle 216 also similarly evenly disposes with described first nozzle 215, can form as required and unevenly.Described first nozzle 215 and second nozzle 216 be configuration equably mutually preferably, and first nozzle is mixed equably with second nozzle.
It below is evaporation coating device that the utilization of the present application possesses plasma mode and heating member mode simultaneously forms the evaporation coating method of evaporation thing on substrate embodiment.
(embodiment 1)
Describe mounting substrate 232 on the anchor clamps of the evaporation coating device of the present application that possesses shower nozzle and heating member with reference to Fig. 2.
Then, utilize described vacuum pump 202 that described chamber 201 gas inside are discharged, make vacuum tightness be less than or equal to 5 * 10
-6Torr.The temperature of described chamber wall preferably maintains the temperature more than or equal to 120 ℃, this be because under the low situation of the temperature of described chamber, have the evaporation thing be not evaporation on substrate but evaporation in the first-class problem points of chamber wall.
Then, after the described first gas inlet 213 injects inactive gas, apply electric power and produce plasma bodys in described empty 212 inside to described electrode 218.At this moment, because described inactive gas is the gas that is used to produce plasma body, so can utilize helium (He), neon (Ne) or argon (Ar) etc.At this moment, the flow of described inactive gas is 1～1000sccm.In addition, utilization is supplied with the RF power of the 100～3000W that receives and is produced described plasma body from described first power supply 211.
Afterwards, apply electric power and described heating member 221 reaches the temperature more than or equal to 1500 ℃ to described heating member 221.
Injecting the required first higher relatively gas of energy of decomposition by the described first gas inlet 213 is ammonia or nitrogen (N
2).At this moment, the flow of described ammonia is preferably 1～500sccm, and the flow of nitrogen is preferably 1～1000sccm.At this moment, first gas that injects the described first gas inlet 213 is injected into the cavity 212 of the described shower nozzle 211 that is formed with plasma body and once decomposes.First gas that utilizes described plasma body once to decompose also passes through described heating member 221 by described first nozzle 215 to chamber 201 internal spray, carries out secondary decomposition formation first group by the heating member 221 that is heated to more than or equal to 1500 ℃.
Then, injecting the required second relatively low gas of energy of decomposition by the described second gas inlet 214 is silane gas.At this moment, the flow of described silane gas is preferably 1～100sccm.First gas that injects the described second gas inlet 214 does not directly spray to described heating member 221 by described cavity, is decomposed fully by the heating member 221 of heating, forms second group.
Afterwards, described first group and second radical reaction form vapor-deposited film, and evaporation are on described substrates.
The method of utilizing explanation in described (embodiment 1) shown in Fig. 4 A, can form first insulating film 401 forming under the situation of vapor-deposited film on the substrate on substrate 232.
At this moment, inject silane gas to the described first gas inlet 213, not to the second gas inlet, 214 injecting gas or also inject under the situation of silane gas to the second gas inlet 214, on described substrate 232, also can form silicon fiml, replace first insulating film 401 shown in Fig. 4 A.
(embodiment 2)
Describe mounting substrate 232 on the anchor clamps of the evaporation coating device of the present application that possesses shower nozzle and heating member with reference to Fig. 2.
Then, utilize described vacuum pump 202 that described chamber 201 gas inside are discharged, make vacuum tightness be less than or equal to 5 * 10
-6Torr.The temperature of described chamber wall preferably maintains the temperature more than or equal to 120 ℃, this be because under the low situation of the temperature of described chamber, exist the evaporation thing be not evaporation on substrate but evaporation in the first-class problem points of chamber wall.
Then, after the described first gas inlet 213 injects inactive gas, apply electric power and produce plasma bodys in described empty 212 inside to described electrode 218.At this moment, because described inactive gas is the gas that is used to produce plasma body, so can utilize helium (He), neon (Ne) or argon (Ar) etc.At this moment, the flow of described inactive gas is 1～1000sccm.
Inject first gas and second gas simultaneously to the described first gas inlet 213, utilization, makes it spray in chamber 201 by described first nozzle and makes the vapor-deposited film evaporation on described substrate after with described first gas and second decomposing gas at the described empty plasma body that produces.As previously mentioned, utilize plasma body with first gas and second decomposing gas after, under the situation that forms vapor-deposited film on the substrate 232, shown in Fig. 4 B, can form the second insulating film 402a.
At this moment, the additive method that can form the described second insulating film 402a is, applies electric power to described heating member 213 and makes described heating member 213 reach temperature more than or equal to 1500 ℃.Then, inject first gas and second gas simultaneously to the described second gas inlet 206, spray in chamber 201 by described second nozzle, make described first gas and second decomposing gas and reaction by described heating member 213, the vapor-deposited film evaporation on described substrate 232, is formed the second insulating film 402a.
Afterwards, utilize the method that is described in detail in described (embodiment 1) to form first insulating film 401.
Then, utilize the arbitrary method in the method for the described formation second insulating film 402a on described first insulating film 401, to form the second insulating film 402a.At this moment, described first insulating film 401 and the second insulating film 402a and 402b can carry out evaporation with multiple lamination as required in proper order.That is, among the present invention, carry out lamination with second insulating film/first insulating film/second insulating film, but can be so that whole modes of first insulating film and the combination of second insulating film are carried out lamination.
At this moment, the difference of described (embodiment 1) and (embodiment 2) is, under the situation of (embodiment 1), decomposing the decomposition of the first high relatively gas of required energy is decomposed fully by plasma decomposes mode and thermolysis mode dual mode, the decomposition of decomposing the second low relatively gas of required energy only only is decomposed to form hydrogenous hardly first insulating film 401 by the thermolysis mode, compare with it, under the situation of (embodiment 2), on first insulating film 401 that forms by described (embodiment 1), described first gas and second gas are all injected the first gas inlet or the second gas inlet simultaneously, then, utilize plasma mode or heating member mode to decompose, and then evaporation is at the second insulating film 402a, on the 402b.
Fig. 3 A and Fig. 3 B are the amplification profiles of anchor clamps of the evaporation coating device of an embodiment of the present invention.
Describe with reference to Fig. 3 A, Fig. 3 A is the sectional view with anchor clamps 231 amplifications of described Fig. 2, can see following structure, that is strainer 234 that constitutes on the opposing face of the described face that carries out the vapor-deposited film growth that, has the substrate 234 that carries out vapor-deposited film growth and the energy supply source 233 that constitutes to described vapor-deposited film energize via this strainer 234.
Arbitrary of described substrate 232 with first spray nozzle part 215 and second spray nozzle part 216 etc. gas supply device is relative disposes, between described gas supply device and substrate 232, constitute the such heating member 221 of tungsten filament.
On anchor clamps 231, constitute energy supply source 233, be located in the described anchor clamps 231 in this energy supply source 233, or be integral type or be anchor clamps 231 self with anchor clamps 231.
On the opposing face of the face of the described film of evaporation of substrate 232, constitute by strainer 234.This strainer 234 is selective wavelength transmission filter devices, and the wavelength of this moment is an optical wavelength.
In addition, the selective light wavelength of the transmission in the present embodiment is the optical wavelength of infrared rays and/or near infrared range, the wavelength of the zone band that the selective light wavelength of this transmission is selected other according to the material and the purpose of the described vapor-deposited film of evaporation, this is the wavelength that is equivalent to usually the necessary energy obtained by the relational expression of known E=h υ.In addition, at this moment, preferably use and conform to the selective wavelength transmission filter device of purpose separately.
In other directions of described strainer 234, that is, constitute energy supply source 233 on other directions of substrate 232 directions of living in, its via this strainer 234 to described vapor-deposited film energize.The energy supply source of this moment is the wavelength energy supply source.
The content that is consistent with above-mentioned strainer 234 is meant: described wavelength is an optical wavelength, particularly contains the optical wavelength of the wavelength of infrared rays and/or near infrared range.
In addition, the substrate 232 that evaporation has a described vapor-deposited film is glass series and the such transparency carrier of transparent polymer material preferably, but according to necessary or inevitable, also can be the wavelength region may band opaque substrate of transmissive not of above-mentioned this purpose.
Describe with reference to Fig. 3 B, anchor clamps 231 comprise: at the substrate 232 that carries out the vapor-deposited film growth; The mask 235 that forms and constitute by open patterns 235a and closed pattern 235b at the opposing face of the face that carries out vapor-deposited film growth of described substrate 232; Be disposed at the strainer 234 of the bottom of described mask 235; The energy supply source 233 that constitutes to described vapor-deposited film energize via described strainer 234.
Described anchor clamps 231 form energy supply sources 233, are located in the described anchor clamps 231 in the described energy supply source 233, or are integral type or are anchor clamps 231 self with anchor clamps 231.
Described mask 235 is formed on by open patterns 235a and closed pattern 235b and selects on the zone of vapor-deposited film, and then accurately is formed on the selecteed zone of horizontal side (lateral) direction, only to this zone energize of described vapor-deposited film.
In addition, described mask 235 is made of open patterns 235a and closed pattern 235b, and it is respectively light-shielding pattern and printing opacity pattern.
The above-mentioned content that is consistent with strainer 234 is meant: described wavelength is an optical wavelength, particularly contains the wavelength of infrared rays and/or near infrared range.
At this moment, Fig. 3 B represents that mask 235 fits tightly the structure on substrate 232, but also can constitute mask 235 between strainer 234 and energy supply source 233.
In addition, strainer contains mask 235 and constitutes, but mask 235 and strainer 234 one can be constituted.In other words, can form the pattern that has with the function of the functional equivalent of the open patterns 235a of described mask 235 and closed pattern 235b on described strainer 234, the pattern of this moment is the printing opacity pattern.
Method to evaporation silicon layer after the evaporation coating device that the anchor clamps 231 shown in Fig. 3 A and Fig. 3 B is imported to Fig. 2 describes.
Utilize the evaporation coating method of the energy supply source 233 of anchor clamps 231 to be: in the vacuum evaporation operation that constitutes by stage that the chamber interior exhaust is become vacuum and the stage of after the chamber interior exhaust is become vacuum, vapor-deposited film being carried out evaporation, to comprise to described vapor-deposited film supply and supply with the stage at the energy of the selective wavelength energy of described vapor-deposited film.
By vacuum pump 202 the chamber interior exhaust is become after the vacuum, carry out vapor-deposited film evaporation operation.
At this moment, energy supply source 233 during carrying out vapor-deposited film evaporation operation to described vapor-deposited film energize.Under these circumstances, to evaporation have each layer (layer) of described vapor-deposited film go up to supply with described vapor-deposited film from amorphousness to the required enthalpy of crystallization generation phase transition, can under the state that the crystallization degree improves, carry out evaporation.At this moment, the intensity of the energy of supply is by about the physical properties of the evaporation rate of described film and described vapor-deposited film material institute.
In addition, energy supply source 233 was provided with before the described vapor-deposited film of evaporation, can give the effect of preheating on described substrate surface.
The energy supply stage of being undertaken by energy supply source 233 comprises: from the stage of energy supply source 233 emit wavelength energy; Is strainer 234 and filtering stage of selecteed wavelength energy with described wavelength energy of emitting via selective wavelength transmission filter device; The stage of described selecteed wavelength energy transmission substrate 232; Supply with the stage of the selecteed wavelength energy of transmission substrate 232 to vapor-deposited film.
The selecteed wavelength energy of transmission substrate 232 can be performed until arbitrary part in vegetative point, intermediate point or the described vapor-deposited film top of described vapor-deposited film to stage that described vapor-deposited film is supplied with according to the intensity of described selecteed wavelength energy.
The present invention exemplifies above-mentioned preferred forms and illustrates, but is not limited to described embodiment, and in the scope that does not break away from spirit of the present invention, the technician who has common practise in the technical field of the invention can carry out various changes and modification.
Claims (69)
1. an evaporation coating device is characterized in that, comprising:
Carry out the substrate of the growth of vapor-deposited film;
The strainer that on film forming opposing face of described substrate, constitutes; And
The energy supply source that constitutes to described vapor-deposited film energize via described strainer.
2. evaporation coating device as claimed in claim 1 is characterized in that, described energy supply source is the wavelength energy supply source.
3. evaporation coating device as claimed in claim 2 is characterized in that, described wavelength energy is the optical wavelength energy.
4. evaporation coating device as claimed in claim 3 is characterized in that, described optical wavelength energy is the optical wavelength that contains the wavelength of infrared rays and/or near infrared range.
5. evaporation coating device as claimed in claim 1 is characterized in that, described strainer is a selective wavelength transmission filter device.
6. evaporation coating device as claimed in claim 5 is characterized in that described selective wavelength is an optical wavelength.
7. evaporation coating device as claimed in claim 6 is characterized in that, the selective light wavelength by the transmission of described selective wavelength transmission filter device is infrared rays and/or near infrared range.
8. evaporation coating device as claimed in claim 1 is characterized in that, also comprises mask, and it is for can be to the selective area energize of described vapor-deposited film and be formed with pattern.
9. evaporation coating device as claimed in claim 8 is characterized in that described mask is a shadow mask, and the pattern that is formed on the described mask is the printing opacity pattern.
10. evaporation coating device as claimed in claim 9 is characterized in that, the mask that is formed with described pattern is between described substrate and the described strainer and/or between described strainer and the described energy supply source.
11. evaporation coating device as claimed in claim 1 is characterized in that, described strainer is to form figuratum strainer.
12. evaporation coating device as claimed in claim 11 is characterized in that, the pattern that is formed on the described strainer is the printing opacity pattern.
13. evaporation coating device as claimed in claim 1 is characterized in that, described vapor-deposited film is silicon or silicon compounds film.
14. evaporation coating device as claimed in claim 1 is characterized in that, described substrate is a transparency carrier.
15. evaporation coating device as claimed in claim 14 is characterized in that, described transparency carrier is a glass.
16. evaporation coating device as claimed in claim 14 is characterized in that, described transparency carrier is a transparent polymer material.
17. an evaporation coating device is characterized in that, comprising:
Chamber;
Be positioned at the shower nozzle in the regulation zone of described chamber interior;
The anchor clamps of substrate are equipped with in corresponding setting with described shower nozzle from the teeth outwards; And
Heating member between described shower nozzle and anchor clamps,
Described shower nozzle comprises:
The first gas inlet and the second gas inlet;
Cavity with the described shower nozzle of described first gas inlet banded inside;
Link with described cavity, be positioned at a plurality of first nozzles on the surface of the shower nozzle corresponding with described anchor clamps; And
Link with the described second gas inlet, be positioned at a plurality of second nozzles on the surface of the shower nozzle corresponding with described anchor clamps.
18. evaporation coating device as claimed in claim 17 is characterized in that, the side surface in described cavity also has and the first outside power supply banded electrode.
19. evaporation coating device as claimed in claim 18 is characterized in that, described electrode produces plasma body by the power supply that applies from described first power supply in inside, cavity.
20. evaporation coating device as claimed in claim 17 is characterized in that, the described first gas inlet is to decompose the gas inlet that required energy is higher than first gas injection of second gas.
21. evaporation coating device as claimed in claim 17 is characterized in that, the described second gas inlet is to decompose the gas inlet that required energy is lower than second gas injection of first gas.
22., it is characterized in that described first gas is ammonia or nitrogen as claim 20 or 21 described evaporation coating devices, described second gas is silane gas.
23. evaporation coating device as claimed in claim 17 is characterized in that, linking on described heating member has second source.
24. evaporation coating device as claimed in claim 17 is characterized in that, described heating member is made of tungsten.
25. evaporation coating device as claimed in claim 17 is characterized in that, described heating member is a filament.
26. evaporation coating device as claimed in claim 17 is characterized in that, described heating member is heated to more than or equal to 1000 degree.
27. evaporation coating device as claimed in claim 17 is characterized in that, described evaporation coating device is the device of evaporation silicon nitride film.
28. evaporation coating device as claimed in claim 17 is characterized in that, described empty inside is the plasma body zone.
29. evaporation coating device as claimed in claim 17 is characterized in that, described first nozzle is evenly distributed in the surface of the shower nozzle corresponding with described anchor clamps.
30. evaporation coating device as claimed in claim 17 is characterized in that, described second nozzle is evenly distributed in the surface of the shower nozzle corresponding with described anchor clamps.
31. evaporation coating device as claimed in claim 17 is characterized in that, described first nozzle and second nozzle distribute mutually equably on the surface of the shower nozzle corresponding with described anchor clamps.
32. evaporation coating device as claimed in claim 17 is characterized in that, the gas that is injected into the described first gas inlet decomposes by plasma body and heating member.
33. evaporation coating device as claimed in claim 17 is characterized in that, the gas that injects the described second gas inlet decomposes by heating member.
34. an evaporation coating device is characterized in that, comprising:
Chamber;
Be positioned at the shower nozzle in the regulation zone of described chamber interior;
Corresponding setting with described shower nozzle, the strainer that substrate is housed from the teeth outwards and is positioned at this substrate bottom constitutes the anchor clamps to the energy supply source of described substrate energize; And
Heating member between described shower nozzle and anchor clamps,
Described shower nozzle comprises:
The first gas inlet and the second gas inlet;
Cavity with the described shower nozzle of described first gas inlet banded inside;
Link with described cavity, be positioned at a plurality of first nozzles on the surface of the shower nozzle corresponding with described anchor clamps; And
Link with the described second gas inlet, be positioned at a plurality of second nozzles on the surface of the shower nozzle corresponding with described anchor clamps.
35. evaporation coating device as claimed in claim 34 is characterized in that, described optical wavelength energy is the optical wavelength energy that contains the wavelength of infrared rays and/or near infrared range.
36. evaporation coating device as claimed in claim 34 is characterized in that, described strainer is a selective wavelength transmission filter device.
37. evaporation coating device as claimed in claim 34 is characterized in that, also comprises for can be to the selective area energize of described vapor-deposited film and form figuratum mask.
38. evaporation coating device as claimed in claim 37 is characterized in that, described mask is a shadow mask, and the pattern that is formed on the described mask is the printing opacity pattern.
39. evaporation coating device as claimed in claim 37 is characterized in that, also has and the first outside power supply banded electrode on the inner side surface in described cavity.
40. evaporation coating device as claimed in claim 34 is characterized in that, described electrode is at the device of the inner generation in cavity plasma body by the power supply that applies from described first power supply.
41. evaporation coating device as claimed in claim 34 is characterized in that, the described first gas inlet is to decompose the gas inlet that required energy is higher than first gas injection of second gas.
42. evaporation coating device as claimed in claim 34 is characterized in that, the described second gas inlet is to decompose the gas inlet that required energy is lower than second gas injection of first gas.
43., it is characterized in that described first gas is ammonia or nitrogen as claim 41 or 42 described evaporation coating devices, described second gas is silane gas.
44. evaporation coating device as claimed in claim 34 is characterized in that, linking on described heating member has second source.
45. evaporation coating device as claimed in claim 34 is characterized in that, described heating member is made of tungsten.
46. evaporation coating device as claimed in claim 34 is characterized in that, described heating member is a filament.
47. evaporation coating device as claimed in claim 34 is characterized in that, described empty inside is the plasma body zone.
48. evaporation coating method, it is characterized in that, in the vacuum evaporation operation that constitutes in stage, have the energy that to supply with described vapor-deposited film at the selective wavelength energy of described vapor-deposited film and supply with the stage by stage that the chamber interior exhaust is become vacuum and evaporation vapor-deposited film after described chamber interior exhaust is become vacuum.
49. evaporation coating method as claimed in claim 48 is characterized in that, described energy is supplied with the stage and is carried out during the described vapor-deposited film of evaporation.
50. evaporation coating method as claimed in claim 48 is characterized in that, described energy is supplied with the stage and is carried out after the evaporation of described vapor-deposited film finishes.
51. evaporation coating method as claimed in claim 48 is characterized in that, described energy is supplied with the stage and was carried out before the described vapor-deposited film of evaporation, gives on the described substrate surface effect with preheating.
52. evaporation coating method as claimed in claim 48 is characterized in that, described energy is supplied with the stage by constituting with the next stage:
From the stage of energy supply source emit wavelength energy;
Described wavelength energy of emitting via selective wavelength transmission filter device with the filtering stage of wavelength energy beyond the selecteed wavelength;
The stage of described selecteed wavelength energy transmission substrate; And
The selecteed wavelength energy of described transmission substrate is supplied with the stage of described vapor-deposited film.
53. evaporation coating method as claimed in claim 52, it is characterized in that the stage of the selecteed wavelength energy of described transmission substrate being supplied with described vapor-deposited film is according to the intensity of described selecteed wavelength energy and supply to arbitrary part in vegetative point, intermediate point or the described vapor-deposited film top of described vapor-deposited film always.
54. an evaporation coating method is characterized in that, comprising:
In the stage of chamber interior mounting substrate with plasma generation area and heating member;
Supply with the stage of first gas and second gas to described chamber;
Described first gas forms first group by described plasma generation area and heating member, and described second gas forms the stage of second group by described heating member;
Described first group and second radical reaction and on described substrate, form stage of vapor-deposited film.
55. evaporation coating method as claimed in claim 54, it is characterized in that, in stage of the described substrate of mounting with during supplying with the stage of described first gas and second gas, also comprise to described plasma generation area and inject inactive gas and apply electric power and form stage of plasma body.
56. evaporation coating method as claimed in claim 54 is characterized in that, in stage of the described substrate of mounting with during supplying with the stage of described first gas and second gas, also comprises to described heating member supply capability and stage of heating.
57. evaporation coating method as claimed in claim 54, it is characterized in that, with described substrate-placing in chamber interior, described first gas and second gas formed respectively before the stage of first group and second group, also were included in described plasma generation area or heating member zone and made first gas and second gas pass through and form the stage of other vapor-deposited film on described substrate.
58. evaporation coating method as claimed in claim 54, it is characterized in that, on described substrate, form after the stage of vapor-deposited film at described first group and second radical reaction, also be included in described plasma generation area or heating member zone make described first gas and second gas by and on described substrate, form stage of other vapor-deposited film.
59., it is characterized in that described other vapor-deposited film is the vapor-deposited film that contains hydrogen as claim 57 or 58 described evaporation coating methods.
60. an evaporation coating method is characterized in that, comprising:
In the stage of chamber interior mounting substrate with plasma generation area and heating member;
Supply with the stage of first gas and second gas to described chamber;
Described first gas forms first group by described plasma generation area and heating member, and described second gas forms the stage of second group by described heating member;
Described first group and second radical reaction and on described substrate, form vapor-deposited film, and supply with stage at the selective wavelength energy of described vapor-deposited film to described vapor-deposited film.
61. evaporation coating method as claimed in claim 60 is characterized in that, described energy is supplied with the stage and is carried out during the described vapor-deposited film of evaporation.
62. evaporation coating method as claimed in claim 60 is characterized in that, described energy is supplied with the stage and is carried out after the evaporation of described vapor-deposited film finishes.
63. evaporation coating method as claimed in claim 60 is characterized in that, described energy is supplied with the stage and was carried out before the described vapor-deposited film of evaporation, gives on the described substrate surface effect with preheating.
64. evaporation coating method as claimed in claim 60 is characterized in that, described energy is supplied with the stage by constituting with the next stage:
From the stage of energy supply source emit wavelength energy;
Will be via selective wavelength transmission filter device filtering stage of wavelength energy beyond the selecteed wavelength from described wavelength energy of emitting;
The stage of described selecteed wavelength energy transmission substrate; And
The selecteed wavelength energy of described transmission substrate is supplied with the stage of described vapor-deposited film.
65. as the described evaporation coating method of claim 64, it is characterized in that the stage of the selecteed wavelength energy of described transmission substrate being supplied with described vapor-deposited film is according to the intensity of described selecteed wavelength energy and supply to arbitrary part in vegetative point, intermediate point or the described vapor-deposited film top of described vapor-deposited film always.
66. evaporation coating method as claimed in claim 60, it is characterized in that, in stage of the described substrate of mounting with during supplying with the stage of described first gas and second gas, also comprise to described plasma generation area and inject inactive gas and apply electric power and form stage of plasma body.
67. evaporation coating method as claimed in claim 60 is characterized in that, in stage of the described substrate of mounting with during supplying with the stage of described first gas and second gas, also comprises to described heating member supply capability and stage of heating.
68. evaporation coating method as claimed in claim 60, it is characterized in that, with described substrate-placing in chamber interior, described first gas and second gas formed respectively before the stage of first group and second group, also were included in described plasma generation area or heating member zone and made first gas and second gas pass through and form the stage of other vapor-deposited film on described substrate.
69. evaporation coating method as claimed in claim 60, it is characterized in that, on described substrate, form after the stage of vapor-deposited film at described first group and second radical reaction, also be included in described plasma generation area or heating member zone make described first gas and second gas by and on described substrate, form stage of other vapor-deposited film.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
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| KR1020050005489A KR100685809B1 (en) | 2005-01-20 | 2005-01-20 | Chemical vapor deposition device |
| KR5489/05 | 2005-01-20 | ||
| KR1020050008796A KR100685823B1 (en) | 2005-01-31 | 2005-01-31 | Method for depositing |
| KR8796/05 | 2005-01-31 | ||
| KR14801/05 | 2005-02-23 | ||
| KR1020050014801A KR100622241B1 (en) | 2005-02-23 | 2005-02-23 | Vacuum deposition system with apparatus for supplying wave energy and the promoting method of thin-film crystallization using it |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009100020409A Division CN101476116B (en) | 2005-01-20 | 2006-01-20 | Device and method for deposition |
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| CN1807681A true CN1807681A (en) | 2006-07-26 |
| CN1807681B CN1807681B (en) | 2010-05-26 |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN1807681B (en) | 2010-05-26 |
| KR20060084701A (en) | 2006-07-25 |
| KR100685809B1 (en) | 2007-02-22 |
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