CN115679443B - Light-assisted metal organic compound chemical vapor deposition device and implementation method - Google Patents
Light-assisted metal organic compound chemical vapor deposition device and implementation method Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 24
- 150000002902 organometallic compounds Chemical class 0.000 title claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 91
- 230000005540 biological transmission Effects 0.000 claims abstract description 79
- 239000000376 reactant Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000012159 carrier gas Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 21
- 230000003287 optical effect Effects 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract 11
- 239000007789 gas Substances 0.000 claims description 27
- 238000001816 cooling Methods 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 238000012806 monitoring device Methods 0.000 claims description 17
- 238000009826 distribution Methods 0.000 claims description 15
- 230000008878 coupling Effects 0.000 abstract description 27
- 238000010168 coupling process Methods 0.000 abstract description 27
- 238000005859 coupling reaction Methods 0.000 abstract description 27
- 239000011261 inert gas Substances 0.000 abstract description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 230000008569 process Effects 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 239000011358 absorbing material Substances 0.000 description 9
- 150000004678 hydrides Chemical class 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 150000002431 hydrogen Chemical class 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
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- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 4
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
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- XXLJGBGJDROPKW-UHFFFAOYSA-N antimony;oxotin Chemical compound [Sb].[Sn]=O XXLJGBGJDROPKW-UHFFFAOYSA-N 0.000 description 1
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- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Abstract
The invention discloses a photo-assisted metal organic compound chemical vapor deposition device and an implementation method. The invention adopts a light beam transmission light path, focuses, splits, expands and collimates the light beam and adjusts the position, and adds an optical inlet window, an optical outlet window and an inert gas transmission pipeline to the MOCVD system, so that the light beam enters into a reaction cavity through the optical inlet window, the light beam generates a light field matched with the energy of one or more reactant molecules in a vibration mode, the reactant molecules are caused to absorb the resonance of the energy of the light field, and the generated active reaction source is transported to the surface of a substrate positioned on a heating disc, thereby realizing the epitaxial growth of materials; and the transmission direction of the inert gas is selected to be parallel or vertical to the surface of the substrate, so that the carrier gas carrying the reactant molecules flows to the surface of the substrate in parallel or vertical, the coupling area of fluency and temperature field is controlled, four different coupling modes are realized, and one coupling mode is selected from the four coupling modes to meet the requirement of epitaxial growth.
Description
Technical Field
The invention relates to a semiconductor material vapor phase epitaxy technology, in particular to a photo-assisted metal organic compound chemical vapor deposition device and an implementation method thereof.
Background
The Metal Organic Chemical Vapor Deposition (MOCVD) is suitable for epitaxial growth of compound semiconductor heterojunction and low-dimensional structure, is easy to realize large-scale production on large-size substrates, is an important method for preparing semiconductor photoelectrons and microelectronic devices, and promotes rapid development of semiconductor material and device manufacturing technology.
In the MOCVD epitaxial growth process, carrier gases such as hydrogen and nitrogen carry metal organic compounds (trimethylgallium TMGa, trimethylaluminum TMAL, trimethylindium TMIn, and magnesium Cp) 2 Mg, etc.) and hydrides (ammonia NH 3 Silane SiH 4 Etc.) and transported into the reaction chamber, the reactants forming partially adducts in the gas phase. As the gas flows to the heated substrate surface, the reactants and adducts gradually undergo thermal decomposition, and the reaction products containing the active reaction sources after thermal decomposition are adsorbed on the substrate surface and migrate at the surface, and finally are incorporated into the crystal lattice through the surface reaction process to form an epitaxial layer. The gradual thermal decomposition of the adduct via its intermediate process increases the incorporation of lattice defects and impurities during epitaxy and the adduct nucleates even further in the gas phase to form polymers, reducing the efficiency of reactant utilization.
Improving the decomposition efficiency of the reactants is an important way to realize efficient MOCVD epitaxy process. Taking MOCVD epitaxial growth process of InGaN (InGaN) material as an example, in the growth temperature range of InGaN material, common hydride source NH 3 The thermal decomposition efficiency of InGaN materials is extremely low, and the epitaxial growth of InGaN materials is limited by the effective nitrogen source partial pressure, resulting In insufficient incorporation efficiency of In components and deterioration of material epitaxial quality. By utilizing the mutual coupling of photon energy and a molecular vibration mode, the energy-matched optical field acts on the reactant molecules to cause the reactant molecules to absorb the resonance of the optical field energy, so that the cracking rate of the reactant molecules is accelerated, and a sufficient active reaction source is provided for MOCVD epitaxial growth of semiconductor materials. The light-assisted MOCVD technology not only can improve the utilization efficiency of reactants, but also can change the epitaxial growth mode of the traditional MOCVD.
In the MOCVD epitaxy process, particularly the mass transport process and the chemical reaction process in MOCVD devices for mass production, the presence of the optical field will further increase the complexity of the chemical reaction kinetics in MOCVD. The life of reactant molecules in an excited state or active reaction products after cracking is short, the reactant molecules or the active reaction products after cracking must be rapidly transported to the surface of a substrate to play a role of laser-assisted epitaxial growth, and meanwhile, the parasitic reaction in a gas phase of an active reaction source can be accelerated in the transportation process. At present, the problem of uniformity of an optical field and a flow field is needed to be solved, and the quality of an epitaxial layer is improved to meet the development requirement of an optoelectronic device.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a photo-assisted metal organic compound chemical vapor deposition device and an implementation method thereof.
An object of the present invention is to provide a photo-assisted metal organic chemical vapor deposition apparatus.
The MOCVD system is a hollow and airtight reaction cavity, a heating plate is arranged at the bottom in the reaction cavity, and a substrate for growing materials is positioned on the heating plate; a plurality of independent reactant containers are arranged outside the reaction cavity, and corresponding reactants are respectively contained in each reactant container aiming at different growth materials; each reactant container is respectively and correspondingly corresponding to an independent gas conveying pipeline, each reactant container is respectively connected into the reaction cavity through a plurality of independent gas conveying pipelines, and valves and flow meters are respectively arranged on each gas conveying pipeline to control gas conveying.
The photo-assisted metal organic chemical vapor deposition device of the present invention comprises: a light source, a light beam transmission system, an MOCVD system and a light absorption material; wherein,,
the beam transmission system comprises a shell, a beam transmission light path, a mechanical fixing and position adjusting device, a cooling device and a beam characteristic measuring and monitoring device; wherein the shell is a shell with hollow inside and light-proof; a beam transmission light path, a mechanical fixing and position adjusting device, a cooling device and a beam characteristic measuring and monitoring device are arranged in the shell; the side wall of the shell is respectively provided with a light inlet and a light outlet, the light source is opposite to the light inlet, and the light outlet is opposite to a light inlet window of the MOCVD system; the beam transmission light path is arranged on the mechanical fixing and position adjusting device; the acquisition end of the beam characteristic measuring and monitoring device is positioned in front of the light outlet;
the beam transmission light path sequentially comprises a focusing device, a beam splitting device, a beam expanding device and a light path position adjusting device;
the MOCVD system also comprises a light inlet window, a light outlet window and an inert gas transmission pipeline; a light inlet window is arranged on the side wall or the top wall of the reaction cavity of the MOCVD system, and a light outlet window is positioned on the opposite side of the light inlet window; for the light inlet window positioned on the side wall of the reaction cavity, the light beam irradiates the surface of the substrate in the reaction cavity in parallel, and for the light inlet window positioned on the top wall of the reaction cavity, the light beam vertically irradiates the surface of the substrate in the reaction cavity; one end of the inert gas transmission pipeline is positioned outside the reaction cavity and connected to an inert gas source, and the other end of the inert gas transmission pipeline passes through the top wall or the side wall of the reaction cavity and is positioned in the reaction cavity; for the inlet of the inert gas transmission pipeline is positioned on the top wall of the reaction cavity, the transmission direction of the inert gas entering the reaction cavity is vertical and downward, so that the carrier gas carrying the reactant molecules vertically flows to the surface of the substrate, and for the inlet of the inert gas transmission pipeline is positioned on the side wall of the reaction cavity, the transmission direction of the inert gas entering the reaction cavity is horizontal, so that the carrier gas carrying the reactant molecules parallelly flows to the surface of the substrate; placing a light absorbing material at the light exit window;
the light source emits a light beam, and photon energy in the light beam is matched with vibration mode energy of one or more reactant molecules; the light beam passes through the light inlet of the shell and enters a light beam transmission light path of the light beam transmission system, is focused by the focusing device, is split by the beam splitting device and then is adjusted to be parallel light by the beam expanding device, or is split by the beam splitting device after being adjusted to be parallel, and the spatial position of the light beam is adjusted by the light path position adjusting device but the transmission direction of the light beam is unchanged, so that the light beam is controlled to enter a light inlet window of the MOCVD system or enter the position of the gas transmission pipeline through the light outlet of the shell; the position of a beam transmission light path is integrally adjusted through a mechanical fixing and position adjusting device, so that the beam completely or partially enters the MOCVD system according to the requirement; cooling the beam transmission light path through a cooling device; the beam characteristic measuring and monitoring device detects the shape and the light intensity distribution of the beam, and adjusts and controls the shape and the light intensity distribution of the beam entering the MOCVD system by adjusting the power of the light source and the light path transmission system according to the shape and the light intensity distribution of the beam; the light beam enters the reaction cavity through the light inlet window, or the light beam enters the gas conveying pipeline and enters the reaction cavity through the gas conveying pipeline; after the carrier gas is mixed with the reactant through the reactant container, carrying reactant molecules into the reaction cavity through the gas conveying pipeline; the light beam entering the reaction cavity generates a light field matched with the vibration mode energy of one or more reactant molecules, so that the reactant molecules can absorb the resonance of the light field energy, thereby generating an active reaction source, and the active reaction source is transported to the surface of the substrate positioned on the heating disc to realize the light-assisted material epitaxial growth; a light absorbing material located at the light exit window to absorb light not participating in the light assist process; the light beam is selected to irradiate the surface of the substrate in parallel or vertically, the carrier gas carrying the reactant molecules is selected to flow to the surface of the substrate in parallel or vertically, the coupling area of fluency and temperature field is controlled, four different coupling modes are realized, and one coupling mode is selected from the four coupling modes to meet the requirement of epitaxial growth.
The cooling device adopts air cooling or water cooling; the air cooling is to blow cold air into the shell of the light beam transmission system; the water cooling is that a water cooling device is arranged on the side wall of each optical element.
The light beam characteristic measuring and monitoring device adopts a photoelectric detector, and the acquisition end of the photoelectric detector is arranged in front of the light outlet of the light beam transmission system.
The focusing means employs a combination of a concave lens and a convex lens.
The beam splitting device comprises a diffraction beam splitting element and a concave lens.
The beam expander adopts a Gaussian beam expander consisting of a concave lens and a convex lens.
The optical path position adjusting device adopts a pair of parallel reflectors, the angles of the reflectors are adjusted in a linkage way, the distance between the reflectors is d, the angle is changed by delta alpha, the transmission direction of the light beam is unchanged, and the change amount of the spatial position of the light beam is dsin delta alpha.
And a light absorbing material is arranged in or outside the light emitting window to absorb light which does not participate in the light auxiliary process, wherein the light absorbing material is a material with the absorption capability for photons in the light beam, such as tungsten trioxide, tin antimony oxide or organic materials.
The mechanical fixing and position adjusting device adopts a guide rail with three-dimensional position adjustment, and fixes the position of the optical element through screws.
Another object of the present invention is to provide a method for implementing the photo-assisted metal organic chemical vapor deposition apparatus.
The realization method of the photo-assisted metal organic compound chemical vapor deposition device comprises the following steps:
1) The light source emits a light beam, and photon energy in the light beam is matched with one or more reactant molecule vibration mode energy;
2) The light beam passes through the light inlet of the shell and enters a light beam transmission light path of the light beam transmission system, is focused by the focusing device, is split by the beam splitting device and then is adjusted to be parallel light by the beam expanding device, or is split by the beam splitting device after being adjusted to be parallel, and the spatial position of the light beam is adjusted by the light path position adjusting device but the transmission direction of the light beam is unchanged, so that the light beam is controlled to enter the position of the light inlet window of the MOCVD system through the light outlet of the shell;
3) The position of a beam transmission light path is integrally adjusted through a mechanical fixing and position adjusting device, so that the beam completely or partially enters the MOCVD system according to the requirement; cooling the components of the beam transmission light path by a cooling device; the beam characteristic measuring and monitoring device detects the shape and the light intensity distribution of the beam, and adjusts and controls the shape and the light intensity distribution of the beam entering the MOCVD system by adjusting the power of the light source and the light path transmission system according to the shape and the light intensity distribution of the beam;
4) The light beam enters the reaction cavity through the light inlet window, or the light beam enters the gas conveying pipeline and enters the reaction cavity through the gas conveying pipeline; after the carrier gas is mixed with the reactant through the reactant container, carrying reactant molecules into the reaction cavity through the gas conveying pipeline; for the inert gas entering the top wall of the reaction cavity through the inlet of the inert gas transmission pipeline, the transmission direction of the inert gas entering the reaction cavity is vertical downward, so that the carrier gas carrying the reactant molecules vertically flows to the surface of the substrate, and for the inlet of the inert gas transmission pipeline positioned on the side wall of the reaction cavity, the transmission direction of the inert gas entering the reaction cavity is horizontal, so that the carrier gas carrying the reactant molecules parallelly flows to the surface of the substrate;
5) The light beam entering the reaction cavity generates a light field matched with the vibration mode energy of one or more reactant molecules, so that the reactant molecules can absorb the resonance of the light field energy, thereby generating an active reaction source, and the active reaction source is transported to the surface of the substrate positioned on the heating disc to realize the light-assisted material epitaxial growth; a light absorbing material located at the light exit window to absorb light not participating in the light assist process;
6) The light beam is selected to be irradiated to the surface of the substrate in parallel or vertically, and the carrier gas carrying the reactant molecules flows to the surface of the substrate in parallel or vertically by selecting the transmission direction of the inert gas to be the parallel direction or the vertical direction, so that the coupling area of fluency and temperature field is controlled, four different coupling modes are realized, and one coupling mode is selected from the four coupling modes to meet the epitaxial growth requirement.
The invention has the advantages that:
the invention adopts a light beam transmission light path, focuses, splits, expands and collimates the light beam and adjusts the position, and adds an optical inlet window, an optical outlet window and an inert gas transmission pipeline to the MOCVD system, so that the light beam enters into a reaction cavity through the optical inlet window, the light beam generates a light field matched with the energy of one or more reactant molecules in a vibration mode, the reactant molecules are caused to absorb the resonance of the energy of the light field, and the generated active reaction source is transported to the surface of a substrate positioned on a heating disc, thereby realizing the epitaxial growth of materials; the transmission direction of the inert gas is selected to be parallel or vertical to the surface of the substrate, so that carrier gas carrying reactant molecules flows to the surface of the substrate in parallel or vertical, the coupling area of fluency and temperature field is controlled, four different coupling modes are realized, and one coupling mode is selected from the four coupling modes to meet the requirement of epitaxial growth; the invention can realize the rapid transportation of the photo-living reaction source to the surface of the substrate, and reduce the gas phase parasitic reaction in the transportation process of the active reaction source, thereby realizing the efficient photo-assisted MOCVD epitaxial growth.
Drawings
FIG. 1 is a schematic diagram of a photo-assisted metal organic chemical vapor deposition apparatus and a method for implementing an embodiment of the invention;
FIG. 2 is a schematic view of an embodiment of a beam expander apparatus for a photo-assisted metal organic chemical vapor deposition apparatus according to the present invention;
FIG. 3 is a schematic view of an embodiment of a beam splitting apparatus for a photo-assisted metal organic chemical vapor deposition apparatus according to the present invention;
FIG. 4 is a schematic view of an embodiment of an optical path position adjustment device for a photo-assisted metal organic chemical vapor deposition apparatus according to the present invention;
FIG. 5 is a schematic diagram of a uniformly distributed optical field generation scheme of an embodiment of a light path position adjustment device for a photo-assisted metal organic chemical vapor deposition apparatus according to the present invention;
FIG. 6 is a schematic diagram of the coupling scheme of the optical field and the reactant gas flow field of the photo-assisted metal organic chemical vapor deposition apparatus according to the present invention, wherein (a) to (e) are different coupling schemes, respectively.
Detailed Description
The invention will be further elucidated by means of specific embodiments in conjunction with the accompanying drawings.
As shown in fig. 1, the light-assisted metal organic chemical vapor deposition apparatus of the present embodiment includes: a light source, a light beam transmission system, an MOCVD system and a light absorbing material;
the beam transmission system comprises a shell, a beam transmission light path, a mechanical fixing and position adjusting device, a cooling device and a beam characteristic measuring and monitoring device; wherein the shell is a shell with hollow inside and light-proof; a beam transmission light path, a mechanical fixing and position adjusting device, a cooling device and a beam characteristic measuring and monitoring device are arranged in the shell; the side wall of the shell is respectively provided with a light inlet and a light outlet, the light source is opposite to the light inlet, and the light outlet is opposite to a light inlet window of the MOCVD system; the beam transmission light path is arranged on the mechanical fixing and position adjusting device; the acquisition end of the beam characteristic measuring and monitoring device is positioned in front of the light outlet;
the beam transmission light path sequentially comprises a focusing device, a beam splitting device, a beam expanding device and a light path position adjusting device;
the MOCVD system also comprises a light inlet window, a light outlet window and an inert gas transmission pipeline; a light inlet window is arranged on the side wall or the top wall of a reaction cavity of the MOCVD system; for the light inlet window positioned on the side wall of the reaction cavity, the light beam irradiates the surface of the substrate in the reaction cavity in parallel, and for the light inlet window positioned on the top wall of the reaction cavity, the light beam vertically irradiates the surface of the substrate in the reaction cavity; one end of the inert gas transmission pipeline is positioned outside the reaction cavity and connected to a nitrogen source, and the other end of the inert gas transmission pipeline passes through the top wall or the side wall of the reaction cavity and is positioned in the reaction cavity; for the inlet of the inert gas transmission pipeline is positioned on the top wall of the reaction cavity, the transmission direction of the inert gas entering the reaction cavity is vertical and downward, so that the carrier gas carrying the reactant molecules vertically flows to the surface of the substrate, and for the inlet of the inert gas transmission pipeline is positioned on the side wall of the reaction cavity, the transmission direction of the inert gas entering the reaction cavity is horizontal, so that the carrier gas carrying the reactant molecules parallelly flows to the surface of the substrate; a light absorbing material is arranged outside the light emergent window;
in this embodiment, the cooling device is air-cooled; the beam characteristic measuring and monitoring device adopts a photoelectric detector, and the acquisition end of the photoelectric detector is arranged in front of the light outlet; the inert gas source adopts nitrogen; the light absorbing material is tungsten trioxide.
As shown in FIG. 2, the beam expander comprises a Gaussian beam expander composed of a concave lens 301 and a first convex lens 302, and the beam waist before entering the beam expander is ω 1 The beam waist after passing through the beam expander is omega 2 ，ω 2 ＞ω 1 . As shown in fig. 3, the beam splitting apparatus includes a diffraction beam splitting element 401 and a second convex lens 402. As shown in fig. 3, the focusing device employs a combination of a concave lens 301 and a first convex lens 302. As shown in fig. 4, the optical pathThe position adjusting device adopts a pair of parallel reflectors 201, the angles of the reflectors are adjusted in a linkage way, the distance between the reflectors is d, the angle is changed by delta alpha, the transmission direction of the light beam is unchanged, and the change amount of the spatial position of the light beam is dsin delta alpha. FIG. 5 is a schematic diagram of the generation of a uniformly distributed light field using multiple Gaussian beams.
The implementation method of the photo-assisted metal organic chemical vapor deposition device of the embodiment comprises the following steps:
1) The light source emits a light beam, and photon energy in the light beam is matched with one or more reactant molecule vibration mode energy;
2) The light beam passes through the light inlet of the shell and enters a light beam transmission light path of the light beam transmission system, is focused by the focusing device, is split by the beam splitting device and then is adjusted to be parallel light by the beam expanding device, or is split by the beam splitting device after being adjusted to be parallel, and the spatial position of the light beam is adjusted by the light path position adjusting device but the transmission direction of the light beam is unchanged, so that the light beam is controlled to enter the position of the light inlet window of the MOCVD system through the light outlet of the shell;
3) The position of a beam transmission light path is integrally adjusted through a mechanical fixing and position adjusting device, so that the beam completely or partially enters the MOCVD system according to the requirement; cooling the components of the beam transmission light path by a cooling device; the beam characteristic measuring and monitoring device detects the shape and the light intensity distribution of the beam, and adjusts and controls the shape and the light intensity distribution of the beam entering the MOCVD system by adjusting the power of the light source and the light path transmission system according to the shape and the light intensity distribution of the beam;
4) The light beam enters the reaction cavity through the light inlet window; after the carrier gas is mixed with the reactant through the reactant container, carrying reactant molecules into the reaction cavity through the gas conveying pipeline;
5) The light beam entering the reaction cavity generates a light field matched with the vibration mode energy of one or more reactant molecules, so that the reactant molecules can absorb the resonance of the light field energy, and the generated active reaction source is transported to the surface of the substrate positioned on the heating disc, so that the epitaxial growth of the material is realized; a light absorbing material located at the light exit window to absorb light not participating in the light assist process;
6) The light beam is selected to irradiate the surface of the substrate in parallel or vertically, the carrier gas carrying the reactant molecules is selected to flow to the surface of the substrate in parallel or vertically, the coupling area of fluency and temperature field is controlled, four different coupling modes are realized, and one coupling mode is selected from the four coupling modes to meet the requirement of epitaxial growth.
Four different coupling modes are shown in fig. 6, in fig. 6 (a), a carrier gas such as hydrogen, nitrogen, etc. carries a metal organic compound source 603 and a hydride source 604 which are independently transported into a reaction chamber perpendicular to the surface of a substrate 602, and the metal organic compound source 603 and the hydride source 604 are mixed in a coupling region 605 of the surface of the substrate 602 placed on a heated tray 601; the beam 606 enters the reaction chamber parallel to the surface of the substrate 602, acts on the mixed reactant gas flow, and forms a light field and a coupling region 605 of the reactant gas flow field near the substrate surface; when reactant molecules pass through the optical field and airflow field coupling region, resonance absorbs the energy of the optical field to form an active reaction source, and the active reaction source is rapidly transported to the surface of the heated substrate to realize light-assisted epitaxial growth. In fig. 6 (b), a carrier gas such as hydrogen, nitrogen, etc. carries a metal organic compound source 603 and a hydride source 604 independently of each other and is transported perpendicular to the surface of the substrate 602 into the reaction chamber; the beam 606 enters the reaction chamber perpendicular to the surface of the substrate 602. In fig. 6 (b), a carrier gas such as hydrogen, nitrogen, etc. carries a metal organic compound source 603 and a hydride source 604 independently of each other and is transported perpendicular to the surface of the substrate 602 into the reaction chamber; the beam 606 enters the reaction chamber perpendicular to the surface of the substrate 602. In fig. 6 (c), a carrier gas such as hydrogen, nitrogen, etc. is carried into the reaction chamber independently of each other along with the metal organic source 603 and the hydride source 604 and parallel to the surface of the substrate 602; the beam 606 enters the reaction chamber perpendicular or parallel to the surface of the substrate 602. In fig. 6 (d), a carrier gas such as hydrogen, nitrogen, etc. is carried into the reaction chamber independently of each other and parallel to the surface of the substrate 602 by the metal organic compound source 603 and the hydride source 604; the beam 606 enters the reaction chamber perpendicular to the surface of the substrate 602. In fig. 6 (e), a carrier gas such as hydrogen, nitrogen, etc. is carried into the reaction chamber independently of each other along with the metal organic source 603 and the hydride source 604 and parallel to the surface of the substrate 602; the beam 606 enters the gas delivery line and passes through the gas delivery line into the reaction chamber, and the inert gas delivery line 610 is perpendicular to the reaction chamber.
Finally, it should be noted that the examples are disclosed for the purpose of aiding in the further understanding of the present invention, but those skilled in the art will appreciate that: various alternatives and modifications are possible without departing from the spirit and scope of the invention and the appended claims. Therefore, the invention should not be limited to the disclosed embodiments, but rather the scope of the invention is defined by the appended claims.
Claims (7)
1. The MOCVD system is a hollow and airtight reaction cavity, a heating disc is arranged at the bottom in the reaction cavity, and a substrate for growing materials is positioned on the heating disc; a plurality of independent reactant containers are arranged outside the reaction cavity, and corresponding reactants are respectively contained in each reactant container aiming at different growth materials; each reactant container is respectively and correspondingly connected to the reaction cavity through a plurality of independent gas conveying pipelines, and a valve and a flowmeter are respectively arranged on each gas conveying pipeline to control gas conveying, and the photo-assisted metal organic compound chemical vapor deposition device is characterized by comprising: a light source, a light beam transmission system and an MOCVD system; wherein,,
the beam transmission system comprises a shell, a beam transmission light path, a mechanical fixing and position adjusting device, a cooling device and a beam characteristic measuring and monitoring device; wherein the shell is a shell with hollow inside and light-proof; a beam transmission light path, a mechanical fixing and position adjusting device, a cooling device and a beam characteristic measuring and monitoring device are arranged in the shell; the side wall of the shell is respectively provided with a light inlet and a light outlet, the light source is opposite to the light inlet, and the light outlet is opposite to a light inlet window of the MOCVD system; the beam transmission light path is arranged on the mechanical fixing and position adjusting device; the acquisition end of the beam characteristic measuring and monitoring device is positioned in front of the light outlet;
the beam transmission light path sequentially comprises a focusing device, a beam splitting device, a beam expanding device and a light path position adjusting device;
a light inlet window is arranged on the top wall of a reaction cavity of the MOCVD system, and light beams vertically enter the surface of a substrate in the reaction cavity through the light inlet window;
the light source emits a light beam, and photon energy in the light beam is matched with vibration mode energy of one or more reactant molecules; the light beam passes through the light inlet of the shell and enters a light beam transmission light path of the light beam transmission system, is focused by the focusing device, is split by the beam splitting device and then is adjusted to be parallel light by the beam expanding device, or is split by the beam splitting device after being adjusted to be parallel, and the spatial position of the light beam is adjusted by the light path position adjusting device but the transmission direction of the light beam is unchanged, so that the light beam is controlled to enter a light inlet window of the MOCVD system through the light outlet of the shell; the position of a beam transmission light path is integrally adjusted through a mechanical fixing and position adjusting device, so that the beam completely or partially enters the MOCVD system according to the requirement; cooling the beam transmission light path through a cooling device; the beam characteristic measuring and monitoring device detects the shape and the light intensity distribution of the beam, and adjusts and controls the shape and the light intensity distribution of the beam entering the MOCVD system by adjusting the power of the light source and the light path transmission system according to the shape and the light intensity distribution of the beam; after the carrier gas is mixed with the reactant through the reactant container, carrying the reactant molecules into the reaction cavity through the gas conveying pipeline, and enabling the carrier gas carrying the reactant molecules to flow to the surface of the substrate in parallel; the light beam entering the reaction cavity generates a light field matched with the vibration mode energy of one or more reactant molecules, and causes the reactant molecules to absorb the resonance of the light field energy, so that an active reaction source is generated, and the active reaction source is transported to the surface of the substrate positioned on the heating disc, so that the light-assisted epitaxial growth of the material is realized.
2. The light-assisted metal-organic chemical vapor deposition device of claim 1, wherein the beam characteristic measuring and monitoring device employs a photodetector, and a collection end of the photodetector is disposed in front of a light outlet of the beam transmission system.
3. The light assisted metal organic chemical vapor deposition apparatus of claim 1 wherein said focusing means employs a combination of a concave lens and a convex lens.
4. The light-assisted metal-organic chemical vapor deposition apparatus of claim 1, wherein the beam splitting apparatus comprises a diffractive beam splitting element and a concave lens.
5. The light assisted metal organic chemical vapor deposition apparatus of claim 1 wherein said beam expanding means is a gaussian beam expanding means comprising a concave lens and a convex lens.
6. The apparatus of claim 1, wherein the optical path position adjusting means is a pair of mirrors disposed in parallel, and the angles of the pair of mirrors are adjusted in linkage.
7. A method of implementing a light assisted metal organic chemical vapor deposition apparatus as recited in claim 1 wherein the method comprises the steps of:
1) The light source emits a light beam, and photon energy in the light beam is matched with one or more reactant molecule vibration mode energy;
2) The light beam passes through the light inlet of the shell and enters a light beam transmission light path of the light beam transmission system, is focused by the focusing device, is split by the beam splitting device and then is adjusted to be parallel light by the beam expanding device, or is split by the beam splitting device after being adjusted to be parallel, and the spatial position of the light beam is adjusted by the light path position adjusting device but the transmission direction of the light beam is unchanged, so that the light beam is controlled to enter the position of the light inlet window of the MOCVD system through the light outlet of the shell;
3) The position of a beam transmission light path is integrally adjusted through a mechanical fixing and position adjusting device, so that the beam completely or partially enters the MOCVD system according to the requirement; cooling the components of the beam transmission light path by a cooling device; the beam characteristic measuring and monitoring device detects the shape and the light intensity distribution of the beam, and adjusts and controls the shape and the light intensity distribution of the beam entering the MOCVD system by adjusting the power of the light source and the light path transmission system according to the shape and the light intensity distribution of the beam;
4) After the carrier gas is mixed with the reactant through the reactant container, carrying reactant molecules into the reaction cavity through the gas conveying pipeline;
5) The light beam entering the reaction cavity generates a light field matched with the vibration mode energy of one or more reactant molecules, so that the reactant molecules can absorb the resonance of the light field energy, thereby generating an active reaction source, and the active reaction source is transported to the surface of the substrate positioned on the heating disc to realize the light-assisted material epitaxial growth;
6) The beam is directed perpendicularly to the substrate surface and the carrier gas carrying the reactant molecules flows parallel to the substrate surface.
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