CN204185555U - A kind of device of laser assisted low-temperature epitaxy nitride material - Google Patents
A kind of device of laser assisted low-temperature epitaxy nitride material Download PDFInfo
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- CN204185555U CN204185555U CN201420609361.1U CN201420609361U CN204185555U CN 204185555 U CN204185555 U CN 204185555U CN 201420609361 U CN201420609361 U CN 201420609361U CN 204185555 U CN204185555 U CN 204185555U
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Abstract
The utility model discloses a kind of device of laser assisted low-temperature epitaxy nitride material, comprise vacuum reaction chamber, gas pre-mixed conjunction chamber, Wavelength tunable laser and travel mechanism; Laser apparatus is the CO of tunable wave length
2laser apparatus, vacuum reaction chamber is provided with laser incidence window and laser emitting window; The light-emitting window of laser apparatus, hot spot setter, laser incidence window and laser emitting window are positioned in same light path successively, and laser emitting window place is provided with laser power meter; Well heater is positioned at vacuum reaction chamber, and heater surfaces is for placing substrate; Travel mechanism is used for laser beam and substrate produces relative movement.Use the utility model improving activated nitrogen source utilization ratio and to reduce on the basis of environmental pollution, realize the big area of nitride film layer material under low temperature environment, fast and high-quality growth.
Description
Technical field
The utility model belongs to nitride gas phase deposition technology field, to relate under laser assisted effect on the surface of a substrate that depositing nitride is as nitride film devices such as gan (GaN), aluminium gallium nitride alloy (AlGaN), aluminium nitride (AlN) or indium nitrides (InN), principal character is to realize the low temperature deposition process of film and reduces nitrogenous source consumption (as ammonia NH in a large number
3use).
Background technology
In nitride, group III nitride semiconductor, if the semiconductor material with wide forbidden band such as GaN, AlGaN, A1N or InN prepare the preferred material of blue light to the photoelectric device such as semiconductor light-emitting-diode (LED), semiconductor laser (LD) of UV-light wave band.There is due to group III-nitride sill the features such as electronics saturation drift velocity is high, specific inductivity is little, good heat conductivity, chemistry and Heat stability is good, be therefore widely used in manufacturing high-performance optical electron device, high-power electronic device and high-frequency apparatus.
High-quality crystalline state nitride film is the key determining nitride device performance and reliability.But current high quality crystalline state nitride film growing technology all needs hot environment.Such as, chemical Vapor deposition process (MOCVD) needs to carry out under 950-1100 DEG C of environment; Need to carry out under the environment of about 800 DEG C as molecular beam epitaxy technique (MBE) under the high vacuum of nitrogenous source based on ammonia; Also the envrionment temperature of about 750 DEG C is needed equally based on hydride gas-phase epitaxy technology (HVPE) in the vacuum of ammonia nitrogenous source.Although high envrionment temperature is conducive to accelerating the decomposition of presoma and the surface diffusion process of adatom, also bring a series of untoward reaction (as nitrogen element disappearance and nitride thermolysis etc. in the biaxial stress of nitride film, GaN film layer) to substrate material simultaneously.The generation of biaxial stress is because the lattice parameter between layer of nitride film and substrate material (as sapphire or silicon) and thermal expansivity difference are comparatively greatly (as lattice parameter difference 16% between GaN film and Sapphire Substrate, and thermal expansivity difference 25%), therefore easily substrate damage is caused, the deformation of substrate is even caused even to be ftractureed, be unfavorable for smooth, the growth of flawless high quality nitride film, degradation problem under luminous efficiency and stability is easily produced when making the later stage manufacture nitride based photodiode (LED) and semiconductor laser (LD).In order to reduce the thermal stresses on nitride film, usually can use and making substrate with the material of nitride film lattice match, as lithium aluminate (LiAlO
2), lithium gallium oxide (LiGaO
2) and silicon carbide etc.But the substrate material cost of these lattice match is too high, is difficult to scale of mass production and commercialization.
Secondly, in Current nitride thin-film material deposition technique, during coating growth, the decomposition pressure of nitrogen is very high, too high envrionment temperature easily aggravates the volatilization of nitrogen, the nitrogen component in nitride based film is caused to lack, make to leave a large amount of nitrogen rooms in film, therefore nitride film has very high Electronic concentration, causes follow-up P type doping difficulty.In addition, ammonia (NH in nitride film
3) utilising efficiency is extremely low, must adopt the ammonia (NH of super-flow
3), cause that nitride based thin-film material growth cost is too high, excessive cycle, energy consumption are too high, and serious environment pollution.
Due to these unfavorable factors that hot environment is brought, also make nitride film growth quality and efficiency greatly reduce, the sedimentation velocity that the sedimentation velocity of current MOVCD synthesis of gallium nitride film is only 4 μm/h, MBE technology is only 1 μm/h.How to reduce the growth temperature of nitride based thin-film material, improve its sedimentation velocity and quality simultaneously, be the significant challenge that the outer optoelectronic areas of Present Domestic faces, being also the technical bottleneck that restriction nitride device Performance and quality improves, is the major reason that nitride device holds at high price.Obviously, if a kind of low temperature, efficient growth nitride crystalline film technology can be found, overcoming and solve the technical barrier that the film growth of existing high temperature nitrogen compound brings, reaching a new high making the technology of preparing of nitride film.
Utility model content
The utility model proposes a kind of laser assisted low-temperature epitaxy nitride material device, utilize the resonance excitation that this device can realize activated nitrogen source molecule, improving activated nitrogen source utilization ratio and reducing on the basis of environmental pollution, realize nitride film layer material under low temperature environment fast and high-quality growth.
The device of a kind of laser assisted low-temperature epitaxy nitride material that the utility model provides, it is characterized in that, this device comprises vacuum reaction chamber, gas pre-mixed conjunction chamber, laser apparatus and travel mechanism;
Described laser apparatus is the CO of tunable wave length
2laser apparatus, vacuum reaction chamber is provided with laser incidence window and laser emitting window;
The light-emitting window of laser apparatus, hot spot setter, laser incidence window and laser emitting window are positioned in same light path successively, and laser emitting window place is provided with laser power meter;
Well heater is positioned at vacuum reaction chamber, and heater surfaces is for placing substrate;
Gas pre-mixed conjunction chamber is arranged on above vacuum reaction chamber, the inlet end in gas pre-mixed conjunction chamber is connected with the inlet pipe of presoma and carrier gases, nitrogenous source inlet pipe respectively, outlet side is connected with one end of induction pipe, and the other end of induction pipe stretches into the substrate proximity in vacuum reaction chamber;
Specifically, the device (i.e. LCVD) of a kind of laser assisted low-temperature epitaxy nitride material that the utility model provides, has following technical characterstic:
(1) the utility model utilizes the laser apparatus (as carbon dioxide laser) of tunable wave length, by Emission Lasers bundle wavelength tuning to NH
3any one (such as 9.219 μm in molecular resonance wavelength, 10.35 μm and 10.719 μm etc.), simultaneously by regulating laser output power (or power density), laser beam is made to act on reaction chamber substrate proximity, accelerate the fracture of NH key, for under cold condition, nitride high-level efficiency deposition provides sufficient activated nitrogen source, thus effectively improve the layer of nitride film speed of growth and quality.
(2) apparatus of the present invention are utilized to realize resonance excitation, because resonance excitation can increase substantially NH at low temperatures
3decomposition efficiency, therefore can complete nitride deposition process under the air-flow more much lower than traditional MOCVD technique, thus save ammonia in a large number, energy efficient, reduce nitrogen disappearance, improve the stoicheiometry of film, increase substantially quality and the performance of layer of nitride film;
(3) utilize apparatus of the present invention, can be implemented in growing nitride film under the cold condition lower than 800 DEG C, significantly can reduce the damage of substrate material, avoid the cracking of substrate material, bending and deformation.Therefore, the layer of nitride film quality of materials grown significantly improves;
(4) owing to utilizing this device to adopt low temperature environment, available substrate material has been increased considerably.Except high temperature resistant but expensive lithium aluminate, lithium gallium oxide and silicon carbide, can also adopt thermal conductivity and stability better, more economic sapphire and monocrystalline silicon piece are as substrate.
In sum, the utility model device utilizes the CO of tunable wave length
2laser irradiation ammonia assisting growth layer of nitride film material technology, can not only significantly improve its quality and efficiency, and significantly can reduce manufacturing cost, have the unrivaled advantage of conventional high-temperature growing nitride film material, the development that can be layer of nitride film Material growth technology provides a kind of new mode.
Accompanying drawing explanation
Accompanying drawing further understands the utility model for providing, and they form a application's part.Drawings illustrate embodiment of the present utility model, and together play with this specification sheets the effect explaining the utility model principle.
Fig. 1 is the structural representation of the first embodiment of laser assisted low-temperature epitaxy nitride material;
Fig. 2 is the structural representation of the second embodiment of laser assisted low-temperature epitaxy nitride material;
Fig. 3 is expanding of laser beam or contracting beam optics system, and it can spot size required for LCVD, expands or reduces laser spot diameter;
Fig. 4 is that ammonia is to CO
2optical maser wavelength is from the absorption spectrum of 9.219to 10.8 μm, and the air pressure of reaction chamber is respectively 1, and 10 and 100Torr;
In figure, the representative of each symbol of numeral is described as follows: 1. laser apparatus; 2. laser beam; 3. laser incidence window; 4. vacuum reaction chamber; 5. the presoma of non-nitrogen element and carrier gases; 6. the precursor gas of activated nitrogen source; 7. carrier gases inlet pipe; 8. the precursor gas inlet pipe of activated nitrogen source; 9. gas pre-mixed conjunction chamber; 10. induction pipe; 11. with the interactional reactant gases of laser beam; 12. substrates; 13. well heaters; 14. displacement platforms; 15. evacuating valves; 16. vacuum pumps; 17. laser power meters; 18. laser emitting windows; 19. hot spot setters, 20. removable scanning reflection mirrors; 21. stationary mirrors, 22 first concavees lens; 23. convex lens; 24. second concavees lens.
Embodiment
Due to ammonia molecule (NH
3) bond energy is high, good stability, under cryogenic, the Main Bottleneck of growing nitride film material is difficult to effectively decompose ammonia molecule, obtain sufficient activated nitrogen atom source.For this reason, the utility model proposes a kind of low-temperature epitaxy nitride film method based on laser assisted chemical vapor deposition (laser-assisted chemical vapor deposition is called for short LCVD), utilize laser assisted resonance excitation NH
3molecule, is directly coupled to NH by laser energy
3in the vibration modes of molecule, make NH
3in molecule, NH bond rupture speed and quantity significantly improve, thus efficient-decomposition goes out a large amount of activated nitrogen atoms at low temperatures, for nitride film growth provides sufficient activated nitrogen source.Like this, not only significantly NH can be improved
3utilization ratio, and the speed of growth and the quality of nitride film can be significantly improved.Simultaneously, low-temperature nitride film material growing technology is no longer confined to the expensive substrate material such as lithium aluminate, lithium gallium oxide and silicon carbide, the substrate material distortion even difficult problem such as cracking brought under not only effectively overcoming hot conditions, the substrate that kind is more, more economic can also be introduced, such as sapphire or silicon single crystal.In other words, adopt this utility model not only can significantly improve the speed of growth and the quality of layer of nitride film, and significantly can reduce manufacturing cost, there is important engineering and industrial application value.
Below in conjunction with accompanying drawing, embodiment of the present utility model is elaborated.It should be noted that, the explanation for these embodiments understands the utility model for helping, but does not form restriction of the present utility model.In addition, if below in described each embodiment of the utility model involved technical characteristic do not form conflict each other and just can mutually combine.
As shown in Figure 1, the device that the utility model example provides mainly comprises vacuum reaction chamber 4, gas pre-mixed conjunction chamber 9, laser apparatus 1 and three-D displacement platform 14.
Vacuum reaction chamber 4 is provided with laser incidence window 3 and laser emitting window 18.
Vacuum reaction chamber 4 by reaction cavity, vacuum pump 16, and therebetween by band evacuating valve 15 pipeline connect.
The light-emitting window of laser apparatus 1, hot spot setter 19, laser incidence window 3 and laser emitting window 18 are positioned in same light path successively, and laser emitting window 18 place is provided with laser power meter 17.
Three-D displacement platform 14 is positioned at vacuum reaction chamber 4, and well heater 13 is positioned on the work top of three-D displacement platform 14, and well heater 13 surface is for placing substrate 12.
Gas pre-mixed conjunction chamber 9 is arranged on above vacuum reaction chamber 4, the inlet end in gas pre-mixed conjunction chamber 9 is connected with the inlet pipe 7 of presoma and carrier gases, nitrogenous source inlet pipe 8 respectively, outlet side is connected with one end of induction pipe 10, and the other end of induction pipe 10 stretches near the substrate 12 in vacuum reaction chamber 4.
Laser apparatus 1 adopts the CO of tunable wave length usually
2laser apparatus, its wavelength tuning range is 9.2-10.9 μm.Use the CO of tunable wave length
2laser apparatus excites ammonia just to implement a kind of mode of the present utility model, also can use emission wavelength and NH
3other light source that one or more in the resonant wavelength of molecule (such as 9.219 μm, 10.35 μm and 10.719 μm) match, that there is certain power or energy density (as luminous in various lasing fluorescence, energizing gas luminescence, arc glow, fluorescent tube or fluorescent tube display etc.).
The air pressure of vacuum reaction chamber 4 can be extracted into a certain degree (such as 10 by vacuum pump 16
-2torr), after vacuum state, then according to reaction chamber and the requirement growing air pressure, regulated by adjustment air input.
Substrate 12 is sapphire, silicon single crystal or other functional materials substrate.The materials transparent in laser wavelength range such as laser incidence window 3 and laser emitting window 18 are ZnSe are made.
Use laser power meter 17 according to the variable power of laser before and after reactant gases absorbs, the specific absorption of reactant gases to laser can be calculated.Regulate the wavelength of laser apparatus 1, make specific absorption reach maximum value (formed with ammonia and resonate).
After laser apparatus 1 outgoing laser beam 2 of tunable wave length enters reaction chamber 4 by the laser incidence window 3 of vacuum reaction chamber 4 sidewall, with the upper surface keeping parallelism of substrate 12, then by the laser emitting window 18 of vacuum reaction chamber 4 side, incide on laser power meter 17.
In order to realize the uniform deposition of layer of nitride film, can also the structure in reaction chamber be improved.Figure 2 shows that follow-on GaN film deposition apparatus schematic diagram.Wherein, directly the stationary mirror 21 of employing shown in Fig. 2, removable scanning reflection mirror 20 replace, thus make device simpler three-dimensional mobile platform 14.Laser beam 2 is by after hot spot setter 19, spot diameter is adjusted to the parallel hot spot of required size, then by after the stationary mirror 21 that becomes miter angle to place with it, incide the plane of reflection of the removable scanning reflection mirror 20 parallel with stationary mirror 21, then vacuum reaction chamber 4 is entered by laser incidence window 3, in deposition process, by the rotary scanning of removable scanning reflection mirror 20, laser facula axis is made to keep substantially constant, to obtain the rete of the Large-Area-Uniform of desired thickness to the distance of substrate.
As shown in Figure 3, hot spot setter 19 is for adjusting laser beam size multiplying power, and it is made up of with fixing convex lens 23 and moveable second concavees lens 24 moveable first concavees lens 22.By adjusting the focal length of above-mentioned concavees lens and convex lens, the laser beam spot diameter of incidence can be expanded or reduce, to meet the demand of the laser power density size adjustment required for nitride film deposition.
The process of said apparatus growing nitride material is utilized to be:
The first step, is placed in substrate material and is provided with on well heater, and substrate and well heater are installed in LCVD (i.e. laser chemical vapor deposition) cavity;
Second step, is evacuated down to 10 by reaction chamber
-2about Torr, and substrate temperature is heated to a certain temperature between 250-800 DEG C;
3rd step, adopts carrier gases (such as nitrogen) by the steam of compounds precursors (such as TMGa, is in a liquid state), with presoma (the such as NH of active nitrogen
3gas) be transported in reaction chamber respectively, and be transported near substrate material surface by tracheae; Operating air pressure is made to be 1-300Torr (preferred 80-120Torr);
4th step, open laser apparatus, the power level of laser apparatus and spot diameter are adjusted to suitable level, and by its output wavelength be tuned to and NH
3a vibration modes of molecule matches, open input window, make laser beam incident along substrate surface parallel direction, hot spot half breadth substrate distance is approximately 10-50mm (preferred value is 20-30mm), laser beam will interact with mixed gas, accelerate the fracture of NH key, abundant activated nitrogen source is provided;
Laser beam near but be not directly transmitted to substrate surface, can extensive deposition be realized, and the quality of rete more evenly, performance is more stable;
5th step, the active substance that precursor molecule decomposites and NH
3the activated nitrogen source generation chemical reaction that molecule provides, depositing nitride film material;
6th step, the deposition regular hour, makes rete reach desired thickness;
7th step, closes the power supply of well heater, reduces underlayer temperature until room temperature; Close gas source valve; Take out the substrate depositing layer of nitride film.
By controlling, with the processing parameter of preferred LCVD, the thickness of desirable layer of nitride film, sedimentation velocity, weave construction and the parameter such as crystalline orientation, surfaceness can be obtained.The processing parameter of LCVD comprises operating air pressure, laser power and spot diameter (i.e. laser power density) in reaction chamber, laser beam spot central authorities apart from the distance of substrate, substrate motion mode and beam flying mode etc.
Presoma comprises the presoma of the non-nitrogen elements such as Ga, A1, In, as trimethyl-gallium TMGa, and trimethyl aluminium TMAl and trimethyl indium TMIn etc.Due to non-nitrogen element presoma (as trimethyl-gallium) at room temperature major part be organic liquid, carrier gases can be adopted by its delivery of steam to reaction chamber.Carrier gases can be nitrogen or other rare gas element.During nitride beyond growing GaN, the organometallics (as trimethyl aluminium TMAl, trimethyl indium TMIn and trimethyl-boron TMB etc.) beyond trimethyl-gallium (TMGa) or metallic compound can be used.Adopt the carrier gaseses such as nitrogen to be transported in reaction chamber by the steam of TMGa liquid by tracheae, nitrogen flow is approximately 16cm
3/ minute (sccm), the volume ratio of TMGa steam and carrier gases is approximately 1:6-1:50.NH
3gas flow be approximately 1200cm
3/ minute (sccm), NH
3the volume ratio of gas and TMGa steam is 600:1 – 4000:1.The concrete scope of nitrogen flow and ammonia flow depends on the volume size of reaction chamber, by Flow-rate adjustment control NH
3the volume ratio of gas and TMGa steam, carrier gases, can control the quality of layer of nitride film, composition, grain-size, weave construction and performance.
The wavelength of described laser beam is NH
3any one of molecular resonance wavelength, as 9.219 μm, 10.35 μm and 10.719 μm etc.
Reaction can be carried out at 250 DEG C to 800 DEG C, and concrete requirement can be selected according to the quality of the layer of nitride film such as GaN and performance requriements.
Embodiment:
For at sapphire (other substrate materials are applicable equally) Grown gallium nitride film layer material, the concrete operation step of this embodiment is as follows:
(1) preparation work: upper surface substrate material 12 being placed in well heater 13, is pumped into 10 with vacuum pump reaction chamber 4
-2the vacuum of Torr;
(2) well heater is started by silicon to 600 DEG C of degree;
(3) adopt nitrogen as carrier gases by the liquid delivery of steam of presoma TMGa 5 in reaction chamber, as the gallium source of nitride deposition; Ammonia 6 is as the nitrogenous source of nitride deposition.Both enter in gas pre-mixed conjunction chamber 9 respectively by carrier gases inlet pipe 7 and nitrogenous source inlet pipe 8 and mix.Wherein, TMGa is by liquid evaporation, is merely able to rare gas element (such as nitrogen) for carrier.Adjusting gas flow, the ratio controlling the inner TMGa steam of reaction chamber and nitrogen is about 1:6; The ratio of ammonia and TMGa steam is 600:1.Mixed gas is input in vacuum reaction chamber 4 by induction pipe 10.Because nitrogen is rare gas element, so generally can not as activated nitrogen source.
(4) mixture pressure controlled in reaction chamber is 1Torr, 10Torr and 100Torr respectively.
(5) laser apparatus 1 is opened, it is 6mm that the laser beam 2 that laser apparatus 1 exports is transferred to diameter by light-conducting system, the power of laser apparatus is 80W, wavelength is adjusted to 9.129 μm or other resonant wavelength (such as 10.35 μm and 10.719 μm etc.), be parallel to substrate 12 upper surface incident, the optical axis center distance substrate surface of laser beam is about 20mm.Due to wavelength and the NH of laser beam
3the resonant wavelength of molecule is suitable, can accelerate the fracture of NH key, thus provide abundant activated nitrogen source at low ambient temperatures.
(6) substrate 12 upper surface and neighbouring trimethyl-gallium TMGa molecule thereof and NH
3the activated nitrogen source generation chemical reaction that molecule provides, deposits GaN film along laser beam irradiation direction at substrate surface.
(7) three-dimensional mobile platform 14 is by driving well heater 13 and the motion of substrate 12 vertical beam of light direction, makes thin film deposition occur in whole substrate surface, thus deposits big area GaN film.
(8) deposit complete after, by heater power source close, gas source valve close, take out after waiting underlayer temperature cool to room temperature, namely complete the deposition of GaN film.
Figure 4 shows that pressure be 1,10 and the ammonia of 100torr to CO
2the absorption spectrum of laser power, as seen under 100Torr pressure, NH
3be three CO of 9.219,10.35 and 10.719 μm to wavelength
2the energy of optical maser wavelength can absorb completely; NH under 10Torr
3very strong absorption peak is still had to above-mentioned wavelength, but specific absorption declines; And under 1Torr, only have 9.219 μm one stronger absorption peak, and specific absorption is lower.No matter under which kind of condition, strong absorption peak is like this all be coupled because the laser energy of specific wavelength there occurs with the vibration modes of ammonia molecule, form resonance excitation, therefore ammonia molecule is made to decompose at low temperatures, form activated nitrogen atom, thus under making low temperature, depositing GaN thin films becomes possibility.
When the pressure in reaction chamber is 100Torr, laser energy is completely absorbed substantially, and utilization ratio of laser energy is the highest, and the sedimentation effect of GaN film is the highest, and film quality is also better, has the good ratio of performance to price.
The low temperature that the utility model is applicable to all nitride films and block grows fast.Gallium nitride film growth Just One Of Those Things kind example application.The utility model is applicable to as aluminium gallium nitride alloy (AlGaN), aluminium nitride (AlN) too, indium nitride (InN), silicon nitride (Si
3n
4) etc. all nitride.
The above is a kind of preferred embodiment of the present utility model, but the utility model is not limited to the content disclosed in this embodiment and accompanying drawing.The equivalence completed under not departing from spirit disclosed in the utility model so every or amendment, all fall into the scope of the utility model protection.
Claims (4)
1. a device for laser assisted low-temperature epitaxy nitride material, is characterized in that, this device comprises vacuum reaction chamber, gas pre-mixed conjunction chamber, laser apparatus and travel mechanism;
Described laser apparatus is the CO of tunable wave length
2laser apparatus, vacuum reaction chamber is provided with laser incidence window and laser emitting window;
The light-emitting window of laser apparatus, hot spot setter, laser incidence window and laser emitting window are positioned in same light path successively, and laser emitting window place is provided with laser power meter;
Well heater is positioned at vacuum reaction chamber, and heater surfaces is for placing substrate;
Gas pre-mixed conjunction chamber is arranged on above vacuum reaction chamber, the inlet end in gas pre-mixed conjunction chamber is connected with the inlet pipe of presoma and carrier gases, nitrogenous source inlet pipe respectively, outlet side is connected with one end of induction pipe, and the other end of induction pipe stretches into the substrate proximity in vacuum reaction chamber;
Described travel mechanism is used for laser beam and substrate produces relative movement.
2. the device of laser assisted low-temperature epitaxy nitride material according to claim 1, is characterized in that, described travel mechanism is the three-dimensional mobile platform being positioned at vacuum reaction chamber, and described well heater is positioned on the work top of three-D displacement platform.
3. the device of laser assisted low-temperature epitaxy nitride material according to claim 1, it is characterized in that, described travel mechanism is made up of stationary mirror and removable scanning reflection mirror, described stationary mirror becomes miter angle to place with the optical axis of hot spot setter, described removable scanning reflection mirror is positioned at laser incidence window place, and placement parallel with stationary mirror; The laser beam penetrated by described laser apparatus is by after hot spot setter, spot diameter is adjusted to the parallel hot spot of required size, then by stationary mirror, incide the plane of reflection of described removable scanning reflection mirror, then enter vacuum reaction chamber by described laser incidence window.
4. the device of the laser assisted low-temperature epitaxy nitride material according to claim 1,2 or 3, it is characterized in that, moveable first concavees lens that described hot spot setter is located along the same line by optical axis form with fixing convex lens and moveable second concavees lens.
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Cited By (3)
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| CN106773177A (en) * | 2017-01-03 | 2017-05-31 | 京东方科技集团股份有限公司 | The repair system and restorative procedure of a kind of holding wire |
| CN110231319A (en) * | 2019-06-03 | 2019-09-13 | 中国科学院合肥物质科学研究院 | The laser induced fluorescence system of petroleum hydrocarbon class pollutant in field quick detection soil |
| CN113026000A (en) * | 2021-04-02 | 2021-06-25 | 泰杋科技股份有限公司 | Device and method for preparing tantalum nitride film by precursor coating gas protection laser |
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2014
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106773177A (en) * | 2017-01-03 | 2017-05-31 | 京东方科技集团股份有限公司 | The repair system and restorative procedure of a kind of holding wire |
| CN106773177B (en) * | 2017-01-03 | 2020-03-06 | 京东方科技集团股份有限公司 | Signal line repairing system and method |
| CN110231319A (en) * | 2019-06-03 | 2019-09-13 | 中国科学院合肥物质科学研究院 | The laser induced fluorescence system of petroleum hydrocarbon class pollutant in field quick detection soil |
| CN113026000A (en) * | 2021-04-02 | 2021-06-25 | 泰杋科技股份有限公司 | Device and method for preparing tantalum nitride film by precursor coating gas protection laser |
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| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zeng Xiaoyan Inventor after: Guo Lianbo Inventor before: Zeng Xiaoyan Inventor before: Lu Yongfeng Inventor before: Guo Lianbo |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150304 Termination date: 20201018 |