CN101469451A - Epitaxial method for nitrifier material - Google Patents
Epitaxial method for nitrifier material Download PDFInfo
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- CN101469451A CN101469451A CNA200710304210XA CN200710304210A CN101469451A CN 101469451 A CN101469451 A CN 101469451A CN A200710304210X A CNA200710304210X A CN A200710304210XA CN 200710304210 A CN200710304210 A CN 200710304210A CN 101469451 A CN101469451 A CN 101469451A
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Abstract
The invention discloses a low-cost epitaxial method for a high-performance nitride material, which comprises the steps of: adopting a patterned substrate or a stress release layer as a substrate; adopting a metal-organic chemical vapor deposition (MOCVD) mode to grow a nucleating layer; adopting a hydride vapor phase epitaxy (HVPE) mode to grow a (AlGaIn)N buffer layer; and adopting the metal-organic chemical vapor deposition (MOCVD) mode to grow a device structure of an optoelectronic material. The method can realize the low-cost growth of high-performance nitride epitaxial materials and exert the maximum performance of the combination of the HVPE and the MOCVD.
Description
Technical field
The invention belongs to technical field of semiconductors, a kind of growth method that designs for low cost realizes the growth of high quality nitride epitaxial structure material particularly, can bond organism hydride gas-phase epitaxy (MOHVPE) or independent halide source metal-organic chemical vapor deposition equipment (SHMOCVD) realize.
Background technology
The spectrum of nitride polynary system material is from 0.7ev to 6.2ev, it is luminous to be used for interband, color covers from infrared to ultraviolet wavelength, aspect optoelectronic applications, as blue light, green glow, ultraviolet light-emitting diodes (LED), short wavelength laser diode (LD), aspects such as ultraviolet detector, Bragg reflection waveguide have obtained important use and development.Gan (GaN) material is as one of third generation semiconductor material representative in addition, excellent properties such as physical and chemical stability with direct band gap, broad stopband, high saturated electron drift velocity, high breakdown electric field and high heat conductance, excellence, aspect microelectronic applications, also obtained paying close attention to widely, can make high temperature, high frequency and high power device, as High Electron Mobility Transistor (HEMT), heterojunction bipolar transistor (HBT) etc.Because nitride material is in the luminous influence that is not subjected to fault in material substantially of some wave band, nitride based in the last few years led lighting fast development, LED is widely used in indicating meter, illumination, pilot lamp, billboard, traffic lights etc., the light compositing light source is quickened in conduct in agricultural, the instrument of conduct diagnosis and treatment in medical treatment.
But because the special property of nitride material adopts traditional method for monocrystal growth to be difficult to grow the body monocrystalline; Use foreign substrate, exist because big etc. the problem of the epitaxial material defect concentration that lattice mismatch and thermal mismatching are brought as sapphire, SiC, Si etc., this result has influenced the practicability progress of GaN based material in microelectronic, field of lasers and ultraviolet LED field etc. greatly.Reduce very significantly buffer layer effect and not obvious in the growth of GaN based material of epitaxial film defect concentration effect in conventional III-V compound semiconductor, growth 2-3 micron buffer layer can not significantly reduce defect concentration.The experiment of the thick film GaN of hydride gas-phase epitaxy (HVPE) growth recently shows that the GaN of growth more than 20 microns can significantly reduce defect concentration, and along with the increase of thickness, defect concentration also will progressively descend.Conventional molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition equipment nitride epitaxial means such as (MOCVD) are difficult to be applied to grow very thick epitaxial film because its growth velocity is low, and utilize the high growth rates of hydride gas-phase epitaxy and thick film that the higher crystalline quality can realize nitride material to grow.
But HVPE is because the restriction of the speed of growth and hot wall Reaktionsofen etc., its nucleating layer often is difficult to accomplish very high quality, need can really realize the growth of high quality thick film by the nitride template of MOCVD growth etc., make HVPE bigger dependency be arranged for MOCVD; The HVPE speed of growth seems too fast again for the meticulous device architecture of growing simultaneously, at this moment have the high precision that will utilize MOCVD to control and realize, this also is the reason that people developed and designed metallorganics hydride gas-phase epitaxy (MOHVPE) or independent halide source metal-organic chemical vapor deposition equipment (SHMOCVD).
In addition, the critical thickness that is limited to hetero epitaxy GaN less (as the critical thickness of GaN on the sapphire less than 8 microns), the GaN that surpasses 20 microns that grows just needs means such as horizontal extension, at this moment have and further to handle the nitride epitaxial film of MOCVD growth, cause HVPE growing GaN thick film production cost significantly to increase like this, production efficiency significantly reduces, and this in addition secondary epitaxy also makes the nitride material contaminated probability of growing greatly increase.Want to realize a secondary growth of thick film GaN, must on substrate, realize the stress relief of epitaxial material, so just can on initial substrate, form stress release layer, or form can horizontal extension structure, the graph substrate that is applied at present in the high-brightness LED is exactly a kind of horizontal extension structure, just it mainly is used to improve luminous, and adopts it to discharge stress among the present invention.
Summary of the invention
The objective of the invention is to design a kind of low-cost epitaxy method of high-performance nitride material, the equipment such as HVPE, MOCVD that solve especially combine the MOHVPE of HVPE and MOCVD or the growth technique problem that SHMOCVD equipment is used for growing high-quality nitride epitaxial material, thereby reduce the production cost of nitride epitaxial material and improve the quality of materials of epitaxial structure.
The low-cost epitaxy method of the high-performance nitride material that the present invention proposes comprises:
Adopt graph substrate or stress release layer as substrate;
Adopt the metal-organic chemical vapor deposition equipment pattern to grow into stratum nucleare;
Adopt hydride gas-phase epitaxy pattern growth Al-Ca-In-N buffer layer;
Adopt the device architecture of metal-organic chemical vapor deposition equipment pattern grow light electronic material.
Further, described graph substrate is patterned Sapphire Substrate, or silicon substrate, or silicon carbide substrates, or the lithium aluminate substrate.
Further, described stress release layer is to possess the substrate that discharges the hetero epitaxy stress structure.
Further, described nucleating layer is the low temperature nucleating layer and the initial nitride thin layer material of aluminium nitride or gan.
Further, described nucleating layer and thin layer nitride are grown by metal-organic chemical vapor deposition equipment, as follow-up hydride gas phase epitaxial growth nucleating layer.
Further, described opto-electronic device is that the growth pattern that utilizes metal-organic chemical vapor deposition equipment accurately to control is realized on the buffer layer as follow-up hydride gas phase epitaxial growth.
Realize that the present invention preferably can be in conjunction with HVPE and MOCVD, the mode of MOHVPE or SHMOCVD that realizes is carried out, can utilize HVPE high-speed rapid growth and MOCVD high quality nucleation best and for the growth control of fine structure, can disposablely grow high-quality epitaxial material, take into account growth efficiency simultaneously, save cost, improve performance.Advantages such as it is simple that the present invention has technology, and growth cycle is short, and material property is good are the effective solutions of realizing nitride material high quality, low-cost growth.
Description of drawings
Fig. 1 is the technical process of one embodiment of the present of invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, be case study on implementation synoptic diagram of the present invention.At first need to alleviate hetero epitaxy stress, increase substrate such as graph substrate or the structure such as the stress release layer of epitaxial film critical thickness; Next is the growth of the nucleating layer of MOCVD pattern; Be high quality thick-layer (AlGaIn) the N buffer growth of HVPE pattern then; Realize the growth of device architecture at last by the MOCVD pattern.Specific as follows:
The graphical sapphire substrate is mainly used in realizes that horizontal extension discharges the stress that hetero epitaxy produces, thereby but improve the growth thickness of nitride on sapphire; Utilize the MOCVD growth pattern, realize the growth of high temperature or low temperature nucleating layer and be the nitride growth nucleating layer of HVPE preparation thin layer, this process can be finished in maximum one hour of half an hour; Switch to the HVPE growth pattern and carry out fast the growth of nitride thick film, this process can be finished in by maximum 1 hour at several minutes according to the adjusting of growth velocity, compares a not only thickness magnitude of increase but also can save ammonia greatly of MOCVD mode; MOCVD growth pattern growth of device structure, for the device of general structure, this is the minimum part of elapsed time in the conventional growth.
Overall calculating promptly can be finished conventional MOCVD in the fastest 1-2 hour needs 3-4 hour growth, and dislocation desity greatly reduces theoretically, and material property will have bigger lifting.
So far invention has been described in conjunction with the preferred embodiments.Should be appreciated that those skilled in the art can carry out various other change, replacement and interpolations under the situation that does not break away from the spirit and scope of the present invention.Therefore, scope of the present invention is not limited to above-mentioned specific embodiment, and should be limited by claims.
Claims (6)
1. the low-cost epitaxy method of a high-performance nitride material comprises:
Adopt graph substrate or stress release layer as substrate;
Adopt the metal-organic chemical vapor deposition equipment pattern to grow into stratum nucleare;
Adopt hydride gas-phase epitaxy pattern growth Al-Ca-In-N buffer layer;
Adopt the device architecture of metal-organic chemical vapor deposition equipment pattern grow light electronic material.
2. epitaxy method according to claim 1 is characterized in that, described graph substrate is patterned Sapphire Substrate, or silicon substrate, or silicon carbide substrates, or the lithium aluminate substrate.
3. epitaxy method according to claim 1 is characterized in that, described stress release layer is to possess the substrate that discharges the hetero epitaxy stress structure.
4. epitaxy method according to claim 1 is characterized in that, described nucleating layer is the low temperature nucleating layer and the initial nitride thin layer material of aluminium nitride or gan.
5. epitaxy method according to claim 1 is characterized in that, described nucleating layer and thin layer nitride are grown by metal-organic chemical vapor deposition equipment, as follow-up hydride gas phase epitaxial growth nucleating layer.
6. epitaxy method according to claim 1 is characterized in that, described opto-electronic device is that the growth pattern that utilizes metal-organic chemical vapor deposition equipment accurately to control is realized on the buffer layer as follow-up hydride gas phase epitaxial growth.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA200710304210XA CN101469451A (en) | 2007-12-26 | 2007-12-26 | Epitaxial method for nitrifier material |
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| CNA200710304210XA CN101469451A (en) | 2007-12-26 | 2007-12-26 | Epitaxial method for nitrifier material |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074611A (en) * | 2010-09-09 | 2011-05-25 | 西安电子科技大学 | Beta irradiation detector based on silicon carbide junction field-effect transistor (JFET) |
| CN102465334A (en) * | 2010-11-19 | 2012-05-23 | 广东德豪润达电气股份有限公司 | Method for growing GaN-based LED epitaxial layer |
| CN101702422B (en) * | 2009-10-29 | 2012-07-04 | 上海蓝光科技有限公司 | Method for growing epitaxial layer of nitride film on figure substrate |
| CN102881570A (en) * | 2012-07-20 | 2013-01-16 | 江苏能华微电子科技发展有限公司 | Method for manufacturing semiconductor material |
| CN105742180A (en) * | 2016-03-11 | 2016-07-06 | 成都海威华芯科技有限公司 | Manufacturing method for GaN HEMT device |
| CN109449261A (en) * | 2018-09-10 | 2019-03-08 | 华灿光电(苏州）有限公司 | A kind of preparation method and LED epitaxial slice of LED epitaxial slice |
-
2007
- 2007-12-26 CN CNA200710304210XA patent/CN101469451A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101702422B (en) * | 2009-10-29 | 2012-07-04 | 上海蓝光科技有限公司 | Method for growing epitaxial layer of nitride film on figure substrate |
| CN102074611A (en) * | 2010-09-09 | 2011-05-25 | 西安电子科技大学 | Beta irradiation detector based on silicon carbide junction field-effect transistor (JFET) |
| CN102074611B (en) * | 2010-09-09 | 2012-07-25 | 西安电子科技大学 | Beta irradiation detector based on silicon carbide junction field-effect transistor (JFET) |
| CN102465334A (en) * | 2010-11-19 | 2012-05-23 | 广东德豪润达电气股份有限公司 | Method for growing GaN-based LED epitaxial layer |
| CN102881570A (en) * | 2012-07-20 | 2013-01-16 | 江苏能华微电子科技发展有限公司 | Method for manufacturing semiconductor material |
| CN105742180A (en) * | 2016-03-11 | 2016-07-06 | 成都海威华芯科技有限公司 | Manufacturing method for GaN HEMT device |
| CN109449261A (en) * | 2018-09-10 | 2019-03-08 | 华灿光电(苏州）有限公司 | A kind of preparation method and LED epitaxial slice of LED epitaxial slice |
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Open date: 20090701 |