CN85104921A - Heat-pesistant thin film photoelectric converter - Google Patents
Heat-pesistant thin film photoelectric converter Download PDFInfo
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- CN85104921A CN85104921A CN198585104921A CN85104921A CN85104921A CN 85104921 A CN85104921 A CN 85104921A CN 198585104921 A CN198585104921 A CN 198585104921A CN 85104921 A CN85104921 A CN 85104921A CN 85104921 A CN85104921 A CN 85104921A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A kind of heat-pesistant thin film photoelectric converter and preparation thereof.This transducer comprises the heat-pesistant thin film photoelectric converter of semiconductor, electrode and diffusion impervious layer, and this diffusion impervious layer is arranged between semiconductor and at least one electrode; This transducer can be avoided owing to metal diffusing or owing to self-electrode enters the quality decline that semi-conductive metallic compound causes.
Description
Declare us hereby, high fields are pure, and mountain pass U.S.A then, Taihe county Tian Xijiu, residence: Kobe, a Hyogo Prefecture, Japan city vertical pool hunting mouthful platform 4-29-204, people from east, Hyogo Prefecture, Japan alum city ball raised path between farm fields 5-40, Kobe, Hyogo Prefecture, Japan Shibei District Da Chi sees mountain platform 14-39, Japanese citizen, just
Heat-pesistant thin film photoelectric converter
Made some new, useful improvement, be described as follows:
The present invention relates to heat-pesistant thin film photoelectric converter and preparation method thereof.
Thin film photoelectric converter is used in solar cell, photodetector, electricity according on the device that resembles optoelectronic receiver that art uses, laser, electroluminescence device and the like.Thin film photoelectric converter mainly comprises semiconductor layer and the electrode that is connected on this layer.Can be with transparency electrode or metal electrode as electrode.As the material of transparency electrode, be to use such as ITO, ITO/SnO up to now always
2, SnO
2, In
2O
3, CdxSnOy, (x=0.5-2, y=2-4), IrO
1-z(z=0.33-0.5) and so on metallic compound, or materials similar.As the metal electrode on the semiconductor, available metal or similar material such as AL stainless steel, Fe, Ni, Cu, brass, Zn, Ag.
Fig. 1 is as an example of optical-electrical converter, and what draw is the typical construction of solar cell.As shown in Figure 1, what solar cell had a metallic compound (as, a metal oxide) system is connected on transparent substrate 1(as, glass) on transparency electrode 2, and then be p type semiconductor layer 3, i type semiconductor layer 4 and n type semiconductor layer 5.Layer of metal electrode 6 is arranged as the backing electrode on the n type semiconductor layer.The light transmission transparency electrode is injected semiconductor layer, produces electric energy thereby absorbed by semiconductor, and the light that a part is not absorbed by semiconductor is mapped on the backing electrode and is reflected, and is absorbed by semiconductor layer again.
When conventional solar cell used under about temperature more than 50 ℃, metal such as Al, Cu, brass, Zn or Ag or metallic compound in the electrode can be diffused into semiconductor layer, thereby semi-conductive quality is reduced.When especially using amorphous or crystallite semiconductor, their quality can obviously descend.For example, if use solar cell in the open, its surperficial temperature can reach about 80 ℃, significantly descends with the induced semiconductor quality.
Some metal can not be diffused in the semiconductor layer as electrode the time.The example of this metalloid has Cr, Ni, Fe or stainless steel.But the metal of the conductance of these metals or reflectivity Al more mentioned above, Cu, brass, Zn, Ag and so on is all low.Because ohmic loss or cause the solar cell quality to descend in the reflection loss of electrode glazing in the electrode has a shortcoming so have the solar cell of Cr, Ni, Fe or stainless steel electrode.Be not only solar cell, the optical-electrical converter of any kind of when at high temperature using, all has above-mentioned shortcoming.
An object of the present invention is under the condition that does not increase ohmic loss of backing electrode and the reflection loss of backing electrode light, for avoiding descending, provide a kind of heat-resisting thin film photoelectric converter owing to metal and metallic compound are diffused into the quality that semiconductor layer causes from electrode.
The present invention relates to a kind of heat-pesistant thin film photoelectric converter that comprises semiconductor, electrode and diffusion impervious layer.Diffusion impervious layer is arranged between semiconductor and at least one electrode.
Fig. 1 is the schematic diagram of conventional thin film photoelectric converter.
In heat-resisting thin film photoelectric converter of the present invention, one layer of diffusion impervious layer is set between semiconductor layer and electrode layer. In the present invention, this diffusion impervious layer can be positioned on semi-conductive any one side.
This kind diffusion impervious layer prevents from being diffused in the semiconductor layer as the metal of electrode or metallic compound and goes, and the component of diffusion impervious layer is selected arbitrarily those to have conductibility and can be stoped metal or metallic compound to be diffused into the material of semiconductor layer. The example of this class material has the metal of IV A family and V A family in metal silicide, the metal that can form silicide and the periodic table of elements.
The example that is used as the metal silicide of diffusion impervious layer has those metal silicides of periodic table of elements I A family, II A family (not comprising Be), III B family, IV B family, V B family, VI B family, VII B family (not comprising Tc) and VIII family.The object lesson of metal silicide has silication strontium, barium slilicide, titanium silicide, zirconium silicide, hafnium suicide, vanadium silicide, niobium silicide, tantalum silicide, chromium silicide, molybdenum silicide, tungsten silicide, silication manganese, silication rhenium, iron suicide, ruthenium silicide, silication osmium, cobalt silicide, silication iridium, nickle silicide and platinum silicide.In these silicides, the silicide of VI B family's metal silicide or VI B family metal alloy (the VI B family metal that contains 50% above atomic percent in the alloy) is better in the periodic table of elements, and reason is that these materials cheaply are easy to stratification on semiconductor.Especially with chromium silicide or the silicide of evanohm that contains 50% above chromium atom percentage for well.Tenor in the metal silicide is 1% to 90% atomic percent, with the 1%-50% atomic percent for well.If tenor is less than 1% atomic percent, the thermal diffusion of electrode metal or metallic compound just can't stop.If tenor surpasses 90% atomic percent, the transparency of this layer extreme difference that promptly becomes, so that the reverberation of injecting light or backing electrode can't make full use of.It to wavelength the absorption coefficient preferably 10 of the light metal silicide of 400nm to 700nm
6Cm
-1To 10
4Cm
-1
The material that another kind can be used as diffusion impervious layer is the metal that can form silicide.This metal reacts with silicon atom in semiconductor layer, forms the layer of metal silicide film, stops metal or metallic compound diffusion by this layer film.The metal that can form silicide is that I A family in the essence periodic table, II A family (not comprising Be), III B family, IV B family, V B family, VI B family, VII B(do not comprise Tc) and those metals of VIII B family.The object lesson that can form the metal of silicide has Sr, Ba, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Ir, Ni and Pt, wherein with VI B family metal for well, because this family's metal material is cheap, and be easy to cambium layer on semiconductor.Especially with the evanohm of chromium or 50% above chromium atom percentage for well.
Other material that can form diffusion impervious layer is the metal of IV A family and V A family in the periodic table.This metalloid also can stop the electrode metal diffusion.The object lesson of these metals has Sn, Pb, Sb and Bi.
In the present invention, the thickness of diffusion impervious layer is with 5
To 1000
For good, 5
To 500
Better.
If thickness is lower than 5
, just can't obtain the rete of uniformity, and can not stop electrode metal to be diffused in the semiconductor layer fully to go.If thickness surpasses 1000
The time, the resistance of this layer can increase greatly, and the reflectivity of backing electrode can reduce, and needs a lot of times to do rete.
When using the silicide rete, thickness is 5 preferably
To 300
, be preferably 7
To 100
When use can form the metal level of silicide, thicknesses of layers was 5 preferably
To 100
When the metal of selecting periodic table IV A family and V A family for use was made rete, thickness was 5 preferably
To 500
The thickness of diffusion impervious layer can be measured with crystal counter, or uses the SIMS(secondary ion mass spectrometry (SIMS)) method analysis top layer, determine its thickness.
Semiconductor among the present invention is amorphous or crystallite semiconductor preferably, because the characteristic of amorphous or crystallite semiconductor can make the situation that quality reduces under the high temperature significantly improve.
Can use semiconductor thickness in the present invention between 0.02 to 100 μ m.
As for semi-conductive composition, preferably select the silicon alloy of silicon or hydrogeneous, fluorine, carbon, nitrogen, oxygen, germanium or tin for use.The object lesson of this based semiconductor is as follows: a-Si:H, a-Si:F:H, a-Si Ge:H, a-Si Sn:H, a-Si N:H, a-Si Ge:F:H, a-Si Sn:F:H, a-Si:N:F:H, a-Si C:H, a-Si C:F:H, a-Si O:H, a-Si O:F:H, uC-Si:H and uC-Si:F:H, wherein a-represents amorphous, and uC-represents crystallite.
The present invention can use the p-i-n N-type semiconductor N, p-n junction semiconductor or Schottky type semiconductor.As the semiconductor that contacts with diffusion impervious layer, to adopt the n N-type semiconductor N for well, because the n N-type semiconductor N is fairly obvious to the improvement of light transfer characteristic in the present invention.
Electrode is placed on plane of light incidence (transparent area) and/or another side (back side).
The electrode of injecting face at light is transparent, is to use such as ITO(to contain SnO
2In
2O
3Film), ITO/SnO
2, SnO
2, In
2O
3, CdxSnOy(x=0.5-2, y=2-4), Ir
2O
1-z(z=0.33-0.5) and so on metallic compound, and similarly material is made.But other materials also can be used.
Electrode overleaf is the backing electrode made from metal or alloy.Any metal or alloy that is used as the backing electrode usually can both be used.For example, Al, Ag, Au, Cu, brass, Zn or similar material can be used as the backing electrode.Except that these metals, any metal or alloy metal with similar physical chemical property can both be used.Yet, it is just weaker that the material that can form silicide such as Li, Na, Ka, Rb, Cs, Mg, Ca, Sr, Ba, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd and Pt is done electrode, because this metalloid conductivity and reflectivity inequality.The thickness of diffusion impervious layer can't accurately be controlled.This is to form the reason of silicide owing to the metal of making electrode and semi-conductive silicon can react.
All conductances are 0.1 * 10
5To 6.2 * 10
5Ω cm
-1Metal all can be used as the backing electrode material.Conductance is 1.5 * 10
5Ω cm
-1More than for well, 3.0 * 10
5Ω cm
-1More than better because the ohmic loss in the electrode is very little.
The on the other hand reflection of light rate that need consider when selecting the backing electrode material, all light reflectivities to wavelength 700nm are all available to the metal more than 99% 20%.To the light reflectivity of wavelength 700nm 50% to the metal more than 99% for well.The example of this metalloid has Ag, Au, Al or Cu.Anti-sugarcane rate of the present invention is meant the amorphous silicon (a-Si:H) of hydrogenation and the interfacial reflectivity of electrode.Reflectivity Rmax lists in the following formula:
Rmax= ((n
1-n
2)
2+K
2 2)/((n
1+n
2)+K
2 2)
In the formula, n
1Be the real part in the synthetic reflection index of hydride amorphous silicon, and n
2And K
2Then be respectively real part and imaginary part in the synthetic reflection index of this metal.
The metal that can satisfy above-mentioned condition is Ag, Au, Al, Cu and Zn.In these metals, Ag, Au and Cu are more suitable for doing the backing electrode.
In addition, no matter be that backing electrode individual layer or multilayer can use.Under the situation of multilayer backing electrode, should have higher reflectivity and higher conductance with the aspect that diffusion impervious layer of the present invention directly contacts, so that make light reflection fully on contact surface, and do not increase interfacial series resistance.
The preparation of heat-pesistant thin film photoelectric converter in the present invention is explained as follows:
For example semiconductor is the same p-i-n N-type semiconductor N that is used for solar cell.The surface of p N-type semiconductor N is facing to the light incidence window.The semi-conductive thickness of optical-electrical converter among the present invention is that 0.02 μ m is to 100 μ m.
In the present invention, not only can use above-mentioned p-i-n N-type semiconductor N, but also can use Schottky type or p-n junction semiconductor.For solar cell, the also available homojunction of both available heterojunction.
The noncrystalline p-i-n N-type semiconductor N film of deposition on the transparency electrode of transparent substrate.The p layer contacts with transparency electrode.
In the present invention, be that the mode of deposited by electron beam evaporation is deposited upon diffusion barrier on the noncrystalline p-i-n N-type semiconductor N film, also can adopt the sputter mode.
The material that is deposited on the semiconductor is a kind of metal silicide, and certain can form the metal of silicide, or certain metal of selecting from periodic table of elements IV A and V A family.
Metal silicide is being used as under the situation that deposit uses, with electron beam evaporation or be sputtered to means, is being formed the film of metal silicide by the plated metal silicide.Yet also can adopt additive method: the method with sputtering target is come plated metal, and the method for decomposing with the briliancy light discharge is simultaneously come depositing silicon.Also available mutual sputtering technology deposits, and the sputter of the sputter of metal and silicon is here carried out simultaneously.
The preparation of metal silicide also can be carried out like this: just the metal deposition that can form silicide on the semiconductor aspect, then, between 80 ℃ to 400 ℃, will anneal half an hour to four hour through the aspect of deposition processes.In this semiconductor, the reaction of metal and silicon takes place, so just formed metal silicide, if necessary, can corrode and remove the metal remained layer.Can obtain thickness 5 with this method
To 300
Metal silicide layer.The content of metal is 2% to 20% atomic percent in this layer.Because the way with annealing is easy to make this transducer, so, this way when the preparation metal silicide, preferably adopted.
Under to the metal that can form silicide or situation that a certain metal in IV A family and the V A family is deposited, also can make deposited by electron beam evaporation or sputter.
After diffusion barrier of the present invention deposition, with the backing electro-deposition on this layer.
An advantage with the heat-pesistant thin film photoelectric converter of above-mentioned prepared is: its conversion efficiency does not reduce because of being heated.In addition, owing to transducer has been carried out the annealing in process of half an hour to four hour in 80 ℃ to 400 ℃ temperature, diffusion impervious layer is tightr with contacting of semiconductor and electrode, so just reduces willing interfacial series resistance.
Because the ambient temperature of solar cell or photo-detector usually is higher than 50 ℃, so the heat-pesistant thin film photoelectric converter among the present invention is particularly suitable for being used as solar cell or photo-detector uses.Particularly under the situation of solar cell, so ambient temperature in the open reaches about 80 ℃, the advantage of the photodetector among the present invention is just more outstanding.
In addition, the present invention be advantageous in that: because diffusion impervious layer of the present invention is thinner, so the light of longer wavelength is very little in the reflection loss at backing electrode place.
By following example fire-resistant thin film photoelectric converter of the present invention and relevant preparation thereof are described.
Certainly, the present invention is not limited to these examples, under the situation that does not depart from principle of the present invention and scope, can carry out different changes and modification to the present invention.
Example one
On the thick glass substrate of 1mm, prepare transparent 1,000
ITO/SnO
2Electrode.
The method of decomposing with glow discharge is with amorphous 120
Thick p layer, 5,000
The n layer that thick i layer and 500A are thick deposits continuously.In the deposition process of p N-type semiconductor N, be 200 ℃ at substrate temperature, when pressure is approximately 1 torr, use SiH
4And B
2H
6Mist.When i type and n N-type semiconductor N are deposited, use SiH respectively
4And H
2Mist and SiH
4And PH
3Mist.Its sedimentary condition the same when carrying out p N-type semiconductor N deposition processes.
Then, 10
-6Under the pressure of torr, the method for deposited by electron beam evaporation with chromium deposition on semi-conductive n layer.The chromium layer thickness is 100
, be deposited on the aluminium lamination thick 1,000 on the chromium layer
; After this, under 150 ℃ condition, solar cell carried out one and a half hours annealing in process.
At AM-1,100mW/cm
2Condition under, with solar simulator test characteristic, and this battery carried out characteristic test 230 ℃ of heating after 2 hours again by the solar cell of above-mentioned prepared.Test result sees Table 1.
Example two
With the same condition of example one under prepare solar cell, but do not do annealing in process, test the characteristic of this battery, and in 230 ℃ of heating test once more after 2 hours.It the results are shown in Table 1.
Example three
Press the same quadrat method of example one, deposition 100
Thick chromium, and under 210 ℃ of conditions, carry out 2 hours annealing in process.After this, the chromium of remnants is eroded, deposit 1000 again
Thick aluminium.With this solar cell 200 ℃ of annealing in process of carrying out 2 hours once more.100
The chromium that comprises 10% atomic percent in thick chromium-silicon layer.
This solar cell has heated 2 hours at 230 ℃.Before and after heating, respectively this solar cell is tested by the mode of example one.Test result sees Table 1.
Example four
The same manner by example three prepares solar cell, but do not carry out 2 hours, 200 ℃ annealing in process.In the heat treated front and back of carrying out 230 ℃, 2 hours, test this solar cell respectively.Test result sees Table 1.
Example five
The same manner by example three prepares solar cell, the different just thickness of n layer be 300; A is 20A as the deposit thickness of the chromium of backing electrode, and the deposit thickness of silver is 1,000A.With the preparation solar cell 200 ℃ of annealing in process of carrying out 2 hours.See Table 1 at 230 ℃, the test result of carrying out before and after six hours heat treated.
Example six
Prepare solar cell by example five same modes, but do not carry out annealing in process under 200 ℃ of conditions, 2 hours.Test the characteristic of this solar cell.It the results are shown in Table 1.
Example seven-18
On the thick glass substrate of 1.1mm, prepare transparent, 850
ITO/SnO
2Electrode.
Mode with the aura electricity decomposes deposits amorphous 100 respectively
P layer and 500
The i layer, and 500
Crystallite n layer.At SiH
4, CH
4, B
2H
6With deposition p layer in the mist; Deposition i layer in SiH gas, deposition n layer in SiH, PH and H mist.It is 1 torr approximately that the pressure of gas is stayed, and substrate temperature is 200 ℃.
5 * 10
-6Under the condition of holder, the way of deposited by electron beam evaporation deposits vanadium and titanium respectively on crystallite n layer.Sedimentary deposit to each metal is 30
, 50
, 100
, 300
, 500
With 1,000
Deposit thickness is 2,000 subsequently
The aluminium electrode.
These 12 solar cells were heated 4 hours at 230 ℃, and tested their characteristic by the same manner of example one.
After heating, the conversion efficiency of each solar cell has all reduced.But the efficient after the reduction all is not less than 85%.
Example 19 to 30
Same way as by example seven to 18 prepares 12 kinds of solar cells just without vanadium and titanium deposition, and deposits with antimony and tin.These solar cells heated 4 hours down at 230 ℃, by the same way as of example one their characteristic were tested.
The efficient of every kind of solar cell has all reduced after heating.But the efficient after the reduction all is not less than 85%.
Comparative example one
Prepare solar cell by example one same way as, but diffusion impervious layer is not set, carrying out 230 ℃ of 2 hours heat treated front and back, test its characteristic respectively by example one identical mode, test result sees Table 1.
Comparative example two
Same way as by example five prepares solar cell, and diffusion impervious layer just is not set.230
Test result sees Table 1.
Comparative example three
Press the way of comparative example one, the preparation solar cell just replaces aluminium backing electrode with chromium backing electrode.
Characteristic in 2 hours front and back of 230 ℃ of heating is listed in the table 1.
Comparative example four
Same process by example seven prepares solar cell, but diffusion impervious layer is not set.In 230 ℃ of front and back of carrying out 4 hours heat treated, the characteristic of testing made solar cell respectively.After heating, conversion efficiency drops to 10% by initial numerical value.
Claims (24)
1, the heat-pesistant thin film photoelectric converter that comprises a block semiconductor, an electrode and a diffusion impervious layer, said diffusion impervious layer are arranged between this semiconductor device and at least one electrode.
2, the transducer of claim 1, wherein the diffusion barrier layer thickness is 5
To 1,000
Between.
3, the transducer of claim 1, wherein the diffusion barrier layer thickness is 5
To 500
Between.
4, the transducer of claim 1, wherein the diffusion barrier bed thickness is a metal silicide layer.
5, the transducer of claim 4, wherein the diffusion barrier layer thickness of metal silicide is 5
To 300
6, the transducer of claim 4, wherein the diffusion barrier layer thickness of metal silicide is 7
To 100
7, the transducer of claim 4, wherein metallic atomic percent is 1-90% in the metal silicide.
8, the transducer of claim 4, wherein the absorption coefficient of mentioned metal silicide layer is 10 at 400nm during to the 700nm wavelength
6To 10
4/ cm.
9, the transducer of claim 4, wherein, the metal in the metal silicide is the metal in the periodic table of elements VI B family.
10, the transducer of claim 4, wherein metal silicide is a chromium silicide.
11, the transducer of claim 1, wherein diffusion impervious layer is a kind of metal level that forms silicide.
12, the transducer of claim 11, the thickness that wherein can form the metal diffusion barrier layer of silicide is 5
To 100
13, the transducer of claim 11, the metal that wherein can form silicide are the metals in the periodic table of elements VI B family.
14, the transducer of claim 11, the metal that wherein can form silicide is a chromium.
15, the transducer of claim 1, wherein diffusion impervious layer is a kind of metal level, this metal is to choose from one group of metal of the IV A family of the periodic table of elements and V A group composition.
16, the transducer of claim 15, wherein the thickness of diffusion impervious layer is 5
To 500
17, the transducer of claim 1, wherein semiconductor is at least a in this group material of what crystallite semiconductor of amorphous semiconductor.
18, the transducer of claim 17, wherein semiconductor is a kind of silicon alloy, and is at least a in silicon alloy of this group of H, F, N, C, Ge and S.
19, the transducer of claim 1, wherein optical-electrical converter electrode is a kind of metal electrode, the conductivity of the metal of this metal electrode is 0.1 * 10
5To 6.2 * 10
5Ω cm
-1, reflectivity is 20% to 99%.
20, the transducer of claim 19, wherein the conductance of metal electrode is 3.0 * 10
5To 6.2 * 10
5Ω cm
-1, reflectivity is 50% to 99%.
21, in preparing the method for heat-pesistant thin film photoelectric converter, the improvement of being carried out comprises: a kind of diffusion impervious layer is set between semiconductor layer and at least one electrode, and in 80 ℃ to 400 ℃ temperature the transducer of preparation is carried out 0.5 to 4 hours annealing in process.
22, the method for claim 21, mentioned diffusion impervious layer wherein are that certain metal silicide deposition forms.
23, the method for claim 21, wherein mentioned diffusion impervious layer are that certain metal deposition that can form silicide forms.
24, the method for claim 21, wherein mentioned diffusion impervious layer are that certain metal deposition forms, and this metal is to choose from one group of metal of the IV A family of the periodic table of elements and V A group composition.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59213943A JPS6191973A (en) | 1984-10-11 | 1984-10-11 | Heat resisting thin film photoelectric conversion element and manufacture thereof |
| JP213943/1984 | 1984-10-11 | ||
| JP213943/84 | 1984-10-11 | ||
| JP59267256A JPH065770B2 (en) | 1984-12-18 | 1984-12-18 | Manufacturing method of heat-resistant thin film photoelectric conversion element |
| JP267256/84 | 1984-12-18 | ||
| JP267256/1984 | 1984-12-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN85104921A true CN85104921A (en) | 1986-04-10 |
| CN1003267B CN1003267B (en) | 1989-02-08 |
Family
ID=26520061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN85104921A Expired CN1003267B (en) | 1984-10-11 | 1985-06-27 | Heat-pesistant thin film photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1003267B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104007497A (en) * | 2013-02-22 | 2014-08-27 | 精工爱普生株式会社 | Wavelength variable interference filter, optical filter device, optical module, and electronic apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100394654C (en) * | 2003-01-16 | 2008-06-11 | 松下电器产业株式会社 | Photoelectronic discharge plate and negative particle generator charged clear device and the like equipment using the plate |
-
1985
- 1985-06-27 CN CN85104921A patent/CN1003267B/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104007497A (en) * | 2013-02-22 | 2014-08-27 | 精工爱普生株式会社 | Wavelength variable interference filter, optical filter device, optical module, and electronic apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1003267B (en) | 1989-02-08 |
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