CN2915883Y - Three targets magnetic sputtering film plating machine - Google Patents
Three targets magnetic sputtering film plating machine Download PDFInfo
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- CN2915883Y CN2915883Y CN 200620001875 CN200620001875U CN2915883Y CN 2915883 Y CN2915883 Y CN 2915883Y CN 200620001875 CN200620001875 CN 200620001875 CN 200620001875 U CN200620001875 U CN 200620001875U CN 2915883 Y CN2915883 Y CN 2915883Y
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Abstract
The utility model relates to a three targets magnetic sputtering film plating machine which is magnetic sputtering vacuum plating equipment, the utility model is used for sediment of all kinds of coatings, especially for the sediment of solar-selective absorber. The utility model includes a vacuum chamber, a shield plate and three cylindrical marks, and the utility model is characterized in that the three cylindrical marks are positioned in a straight line in the vacuum chamber, and is parallel to the door of the vacuum chamber, the shield plate is positioned between adjacent cylindrical marks. The utility model of film plating machine can increased the efficiency of film sputtering and production efficiency on the premise of no change in function, and the utility model is easy to be replaced and repaired.
Description
Technical field
The utility model relates to a kind of three target magnetic control sputtering coating equipments, belongs to the magnetic control sputtering vacuum coating machine equipment, is mainly used in the deposition of the deposition of various coatings, particularly solar selective absorbing coating.
Technical background
Style Columu Talget magnetron sputtering film device is mainly used in the single or multiple metallic substance coating deposition than the product of big area or width, especially for the deposition of solar vacuum tube surface selectivity absorber coatings.The vacuum coating film equipment that deposits solar selective absorbing coating in the complete glass vacuum sun thermal-collecting tube in the market is mainly based on single target magnetic control sputtering coating equipment of sputter Al-N/Al coating for selective absorption and three target coating equipments of sputter Cu-SS-Al/N coating for selective absorption.
It is the sputter center that single target coating equipment normally is equipped with a Style Columu Talget in the interposition of vacuum chamber, can adopt circumference sputter mode that the magnetic field rotary target material do not change or target rotation and the directed sputter mode that do not change in magnetic field, workpiece is symmetrically distributed around target usually, to obtain uniform coating.Its advantage is: single target filming equipment has only a cover power supply and a sputtering target, and low cost of manufacture simple in structure is applicable to the sputter of single metal or alloy coating.Shortcoming is: because single target filming equipment has only a cover power supply and a sputtering target, therefore under same processing condition, can only carry out the sputter of single metal or single alloy, and under the fixed processing condition, the sedimentation rate of coating also is a fixed, can't realize the co-sputtered of multiple metal or multiple alloy, kind that can splash coating compares less.
Single relatively target coating equipment, many targets coating equipment just can be realized the co-sputtered of multiple metal or multiple alloy.Many targets coating equipment of existing market has two targets, three targets, four targets or more, designs according to processing requirement fully.The cylindrical vacuum chamber that is used for three target coating equipments of solar selectively absorbing coating sputter at present is that three column rotary targets arrange with isosceles triangle is principal character, realize the independent or co-sputtered of three targets under the same vacuum chamber, each Style Columu Talget all can adopt circumference sputter mode that the magnetic field rotary target material do not change or target rotation and the directed sputter mode that do not change in magnetic field, can realize the sputter of many metallic membranes system.Its structural representation as shown in Figure 1,1 is vacuum-chamber wall among the figure, the 2nd, the column sputtering target, the 3rd, shielding slab, the 4th, pole shoe, 5 magnet steel, the 6th, door for vacuum chamber, three sputtering targets are arranged, the target of each target can be the same or different, and is two targets of center line symmetry (or asymmetric) more nearby from door for vacuum chamber, is a target at a distance from door for vacuum chamber, three targets are Chinese character pin-shaped symmetry (or asymmetric) and are distributed in the vacuum chamber, and the shielding slab here is a Y shape.Its advantage is: can realize the co-sputtered of one or more metals or multiple alloy, increase substantially the sedimentation rate of coating, reduce the process time, thus the production efficiency of effectively raising.But this three targets have a lot of shortcomings with product word structure distribution, main drawback is: 1, for three target magnetic control sputtering coating equipments, because the shielding isolation that the Y shape shielding slab that can only adopt between the magnetron sputtering target of product word arrangement carries out between target could guarantee can not pollute mutually between three targets, so causing effective sputter area of each root target is the unidirectional sputter of certain angle, cause the sputter rate of single target to reduce, and then influence the sedimentation rate of coating; 2, for a certain main sputtering target material in three targets, because the unidirectional sputter of single face that delta structure causes causes its sputter rate and sedimentation rate lower, thereby has also influenced the sedimentation rate of whole coating, cause the coating process overlong time, reduced production efficiency.3, arranging of three target delta structures consumes the measurement of degree and changes and also cause very big difficulty target, as when measuring the consumption degree of the innermost target of coating chamber, difficulty is very big, especially in the time of will changing this target, because the vacuum interior space is narrow and small, then need two targets of front and shielding slab are all dismantled and can be implemented.Cause the maintenance complexity of equipment, difficulty.If adopting is the product word arrangement structure of the target in vacuum chamber doorway, two targets in back, the inconvenience in the time of can bringing observation equally and change target is not done detailed description at this.
Technology contents
Technical problem to be solved in the utility model is, designs a kind of three target magnetic control sputtering coating equipments, under the constant prerequisite of function, improves coating sputtering yield and production efficiency, and is easy to change and maintenance.
The utility model comprises vacuum chamber, shielding slab and three cylindrical targets, it is characterized in that three cylindrical targets are in-line and are arranged in the vacuum chamber, and is parallel to door for vacuum chamber, between the adjacent cylindrical target shielding slab is arranged.
The three target magnetic control sputtering filming equipment major advantages that in-line is arranged have:
1, under the condition of the effective sputter area that guarantees auxiliary sputtering target, make the sputter area maximization of main sputtering target, the directed double-faced sputter of the main sputtering target of realizing, under identical sputtering condition, make the sputter rate of main sputtering target increase one times, thereby the sedimentation rate that makes coating has obtained double growth, has reduced the sedimentary process time of coating, has improved production efficiency;
2, there are three sputtering targets to distribute to be and are parallel to the door for vacuum chamber layout, more help monitoring and measurement that sputtering target material consumes degree, the simultaneously also more convenient replacing and the maintenance of sputtering target.When wherein a certain sputtering target keeps in repair and change, and do not need other two sputtering targets are carried out dismounting;
3, for each root sputtering target, can increase and decrease the field circuit of effective sputter area as required, to increase the sputter rate of single face, improve sedimentation rate.
4, when equipment claimed adopts intermediate frequency power supply to carry out the twin target sputtering sedimentation, only need remove shielding slab and main sputtering target just can be realized, thereby increase the function and the versatility of equipment.
5, need a kind of target as sputter formula when equipment, only need all change three targets into identical target and just can carry out three targets and spattered altogether, thereby make the sedimentation rate of coating obtain growth, reduced the sedimentary process time of coating, improved production efficiency.
Description of drawings
Fig. 1 is isosceles triangle three target magnetic control sputtering coating equipment synoptic diagram.
Fig. 2 is in-line three target magnetic control sputtering coating equipment synoptic diagram.
Fig. 3 has the shielding slab structural representation of certain angle and circular arc.
The trapezoidal formula shielding slab of Fig. 4 structural representation.
The flat shielding slab structural representation of Fig. 5 list.
The dual-flat plate shielding slab structural representation that Fig. 6 semicircle connects.
Fig. 7 has the dual-flat plate shielding slab structural representation of the semicircle connection of certain angle.
Fig. 8 is self-loop magnetic field in-line three target magnetic control sputtering coating equipment synoptic diagram.
Embodiment
Fig. 2 has provided most typical embodiment of the present utility model.1 is vacuum-chamber wall among the figure, the 2nd, and column sputtering target, the 3rd, shielding slab, the 4th, pole shoe, the 5th, magnet steel, the 6th, door for vacuum chamber.Demonstrate among the figure, three Style Columu Talget are parallel to door for vacuum chamber and are in-line and arrange in same vacuum chamber, can place middle by the main sputtering target that coating process is required, two auxiliary sputtering targets place main sputtering target both sides, all adopt shielding slab between adjacent two targets, the sputter area between three sputtering targets is carried out effective isolation.The diameter of three targets is to determine according to processing requirement, and the diameter of common main sputtering target also can be that three target diameters are identical greater than other two targets.Three targets can be symmetrically distributed by axis, also can asymmetric distribution.
In the present embodiment, three sputtering targets all adopt the not directed sputter mode of rotary target material rotation of magnetic field, the sputter area of three sputtering targets is symmetrical structure and distributes, wherein place intermediary master sputtering target to adopt two-sided dorsad directed sputter structure, two auxiliary sputtering targets adopt the directed sputter structure of single face.The angle of shielding slab can carry out 60 °-180 ° adjustment as required; The sputtering target Distribution of Magnetic Field adopts typical planar target structure, can adopt a group or more magnetron sputtering field circuit for the single face sputter area certificate of each root target.
Under the condition of the effective sputter area that guarantees auxiliary sputtering target, make the sputter area maximization of main sputtering target, the directed double-faced sputter of the main sputtering target of realizing, under identical sputtering condition, make the sputter rate of main sputtering target increase one times, thereby the sedimentation rate that makes coating has obtained double growth, has reduced the sedimentary process time of coating, has improved production efficiency.
Three sputtering targets distribute to be and are parallel to the door for vacuum chamber layout, more help monitoring and measurement that sputtering target material consumes degree, the simultaneously also more convenient replacing and the maintenance of sputtering target.When wherein a certain sputtering target keeps in repair and change, and do not need other two sputtering targets are carried out dismounting.
For each root sputtering target, can increase and decrease the field circuit of effective sputter area as required, the quantity that promptly increases magnet steel improves sedimentation rate to increase the sputter rate of single face.
When equipment claimed adopts intermediate frequency power supply to carry out the twin target sputtering sedimentation, only need remove shielding slab and main sputtering target just can be realized, thereby increase the function and the versatility of equipment.
When equipment needs a kind of target as sputter formula, only need all change three targets into identical target and just can carry out three targets and spattered altogether, thereby make the sedimentation rate of coating obtain growth, reduced the sedimentary process time of coating, improved production efficiency.
In Fig. 3-Fig. 7, provided different shielding slab structures, also can be with other similar form.
In Fig. 8, three targets all adopt the not directed sputter structure of rotary target material rotation of self-loop Distribution of Magnetic Field, magnetic field, and other structure is identical.
Claims (4)
1, a kind of three target magnetic control sputtering coating equipments comprise vacuum chamber, shielding slab and three cylindrical targets, it is characterized in that three cylindrical targets are in-line and are arranged in the vacuum chamber, and are parallel to door for vacuum chamber, between the adjacent cylindrical target shielding slab are arranged.
2,, it is characterized in that said three target diameters can be identical, also not being different according to the said three target magnetic control sputtering coating equipments of claim 1.
3, according to the said three target magnetic control sputtering coating equipments of claim 1, it is characterized in that said three targets can be that axis is symmetrically distributed, also can asymmetric distribution.
4, according to the said three target magnetic control sputtering coating equipments of claim 1, it is characterized in that said three targets can be that the magnetic field rotary target material does not change, also can be that the target rotation is not changeed in magnetic field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620001875 CN2915883Y (en) | 2006-01-26 | 2006-01-26 | Three targets magnetic sputtering film plating machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620001875 CN2915883Y (en) | 2006-01-26 | 2006-01-26 | Three targets magnetic sputtering film plating machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2915883Y true CN2915883Y (en) | 2007-06-27 |
Family
ID=38186790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200620001875 Expired - Fee Related CN2915883Y (en) | 2006-01-26 | 2006-01-26 | Three targets magnetic sputtering film plating machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2915883Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102409311A (en) * | 2011-11-15 | 2012-04-11 | 吴江南玻华东工程玻璃有限公司 | Cathode uniformity correcting baffle plate |
| CN107815658A (en) * | 2017-11-29 | 2018-03-20 | 沈阳鹏程真空技术有限责任公司 | A kind of target of small size vacuum magnetic control three sputtering plating Mo machines |
-
2006
- 2006-01-26 CN CN 200620001875 patent/CN2915883Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102409311A (en) * | 2011-11-15 | 2012-04-11 | 吴江南玻华东工程玻璃有限公司 | Cathode uniformity correcting baffle plate |
| CN107815658A (en) * | 2017-11-29 | 2018-03-20 | 沈阳鹏程真空技术有限责任公司 | A kind of target of small size vacuum magnetic control three sputtering plating Mo machines |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: Beijing City, Haidian District East Road No. 1, power Creative Park E block 9 room 901, zip code: 100085 Co-patentee after: Beijing Huaye Solar Energy Co., Ltd. Patentee after: Beijing Qinghua Sunshine Energy Development Co., Ltd. Address before: Beijing City, Haidian District East Road No. 1, power Creative Park E block 9 room 901, zip code: 100085 Co-patentee before: Beijing Qinghua Yangguang Solar Energy Equipment Co.,Ltd. Patentee before: Beijing Qinghua Sunshine Energy Development Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070627 Termination date: 20130126 |