CN2906928Y - Integrated circuit chip - Google Patents
Integrated circuit chip Download PDFInfo
- Publication number
- CN2906928Y CN2906928Y CN 200520037729 CN200520037729U CN2906928Y CN 2906928 Y CN2906928 Y CN 2906928Y CN 200520037729 CN200520037729 CN 200520037729 CN 200520037729 U CN200520037729 U CN 200520037729U CN 2906928 Y CN2906928 Y CN 2906928Y
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- Prior art keywords
- circuit
- conductive layer
- electrostatic
- electrically connected
- input pad
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Abstract
The utility model relates to an integrated circuit chip, comprising at least one input pad, at least one inner circuit and a static protection circuit, which is coupled between the input pad and the inner circuit and comprises a static protection component, a first conducting layer and a second conducting layer; the first conducting layer is arranged on the static protection component and connected with the static protection component; the second conducting layer is arranged on the first conducting layer and is electrically connected with the first conducting layer and the input pad; the length and the projected area of the second conducting layer are less than or equal to that of the first conducting layer respectively.
Description
Technical field
The utility model relates to a kind of integrated circuit (IC) chip, particularly relates to a kind of integrated circuit (IC) chip with electrostatic defending circuit winding structure.
Background technology
For the signal input part that prevents electronic system is subjected to electrostatic impact, prior art is the electrostatic discharge protection circuit that is coupled of the input in system.
As shown in Figure 1, a kind of existing electrostatic discharge protection circuit 1 is connected electrically between an input pad 21 and the internal circuit 22, input pad 21 receives an external signal and external signal is passed to internal circuit 22, electrostatic discharge protection circuit 1 comprises two diodes 11,12, and diode 11,12 is electric connection of power supply V respectively
DD, V
SS
As shown in Figure 2, with diode 11, the winding structure of its top is the finger-fork type layout, the cross-section structure of A-A ' line segment and B-B ' line segment as shown in Figure 3, wherein diode 11 is set on the substrate 16, the winding structure of diode 11,12 tops is conductive layer 15,14,13 in regular turn, conductive layer 13 respectively with input pad 21 and power supply V
DDBe electrically connected, in addition, above diode 12, conductive layer 13 respectively with input pad 21 and power supply V
SSBe electrically connected.In addition, prior art also can replace with transistor with the diode 11,12 of electrostatic discharge protection circuit 1, for example replaces diode 11 with P-type mos (PMOS), and N type metal oxide semiconductor (NMOS) is replaced diode 12.
When electrostatic current inputed to input pad 21 by holding wire, diode 11,12 was by the electrostatic current conducting, so electrostatic current can not flow into internal circuit 22, so internal circuit 22 is not impacted by electrostatic current.
Yet, though can avoiding being subjected to electrostatic current by electrostatic discharge protection circuit 1, impacts internal circuit 22, but under normal operation, the winding placement of electrostatic discharge protection circuit 1 produces stray capacitance easily because of circuit is coupled to each other, the stray capacitance of 16 of the stray capacitance of 13,14,15 of metal levels, metal level 13,14,15 and substrates for example, if when input pad 21 was arranged at metal level 13 tops, the stray capacitance that metal level 13,14,15 and input pad are 21 was big than other stray capacitances again.
When being coupled to internal circuit 22, these stray capacitances will influence the performance of internal circuit 22, particularly internal circuit 22 is a radio circuit (for example low noise amplifier etc.), stray capacitance can make internal circuit 22 produce extra load, causes internal circuit 22 performances to lower.
Therefore, how a kind of integrated circuit (IC) chip with electrostatic defending circuit winding structure is provided, in the hope of can reducing the influence of stray capacitance between circuit, and then lowers the influence of electrostatic discharge protection circuit for institute's distribution subsystem, promote the performance of institute's distribution subsystem, one of current just important problem.
The utility model content
Because above-mentioned problem, the purpose of this utility model is for providing a kind of integrated circuit (IC) chip with electrostatic defending circuit winding structure that can reduce stray capacitance between circuit.
For reaching above-mentioned purpose, cooperate with an electrostatic protection element according to a kind of electrostatic defending circuit winding structure of the present utility model, electrostatic defending circuit winding structure comprises one first conductive layer and one second conductive layer.First conductive layer is set on the electrostatic protection element and with electrostatic protection element and is electrically connected; Second conductive layer is set on first conductive layer and with first conductive layer and is electrically connected, and the length of second conductive layer or projected area are not more than the length or the projected area of first conductive layer respectively.
For reaching above-mentioned purpose, be applied to an input pad and a power supply according to a kind of electrostatic discharge protection circuit of the present utility model, electrostatic discharge protection circuit comprises an electrostatic protection element, one first conductive layer and one second conductive layer.First conductive layer is set on this electrostatic protection element and has one first circuit and a second circuit, and first circuit is electrically connected with electrostatic protection element respectively with second circuit; Second conductive layer is set on first conductive layer and has a tertiary circuit and one the 4th circuit, tertiary circuit is electrically connected with second circuit with first circuit of first conductive layer respectively with the 4th circuit, tertiary circuit is electrically connected with input pad, the 4th circuit is electrically connected with power supply, and the length of second conductive layer or projected area are not more than the length or the projected area of first conductive layer respectively.
For reaching above-mentioned purpose, comprise at least one input pad, an at least one internal circuit and an electrostatic discharge protection circuit according to a kind of integrated circuit (IC) chip of the present utility model.Electrostatic discharge protection circuit is coupling between input pad and the internal circuit, and electrostatic discharge protection circuit comprises an electrostatic protection element, one first conductive layer and one second conductive layer; First conductive layer is set on the electrostatic protection element and with electrostatic protection element and is electrically connected; Second conductive layer is set on first conductive layer and with first conductive layer and input pad and is electrically connected, and the length of second conductive layer or projected area are not more than the length or the projected area of first conductive layer respectively.
From the above, have because of foundation is of the present utility model in the integrated circuit (IC) chip of electrostatic defending circuit winding structure, the length of second conductive layer or projected area are not more than the length or the projected area of first conductive layer respectively, so can reduce the stray capacitance between conductive layer, and then lower the influence of electrostatic discharge protection circuit for institute's distribution subsystem, promote the performance of institute's distribution subsystem.
Description of drawings
Fig. 1 is a kind of circuit block diagram of existing electrostatic discharge protection circuit;
Fig. 2 is a kind of schematic diagram of existing electrostatic discharge protection circuit;
Fig. 3 is another schematic diagram of a kind of existing electrostatic discharge protection circuit;
Fig. 4 is the schematic diagram according to a kind of electrostatic defending circuit winding structure of the utility model preferred embodiment;
Fig. 5 is to be the schematic diagram of finger-fork type setting according to circuit in a kind of electrostatic defending circuit winding structure of the utility model preferred embodiment;
Fig. 6 is for comprising the schematic diagram of an input pad according to a kind of electrostatic defending circuit winding structure of the utility model preferred embodiment;
The schematic diagram of Fig. 7 for being provided with for the square frame alternating expression according to circuit in a kind of electrostatic defending circuit winding structure of the utility model preferred embodiment; And
Fig. 8 is the circuit block diagram according to a kind of electrostatic discharge protection circuit of the utility model preferred embodiment.
The component symbol explanation:
1: electrostatic discharge protection circuit
11,12: diode
13-15: conductive layer
16: substrate
21: input pad
22: internal circuit
3: electrostatic defending circuit winding structure
30: input pad
31-33,38: conductive layer
311,312,321,322,331,332,381,382: circuit
34-36,37,39: conductive part
4: integrated circuit (IC) chip
41: electrostatic protection element
42: substrate
43,44: electrostatic discharge protection circuit
45: internal circuit
V
DD, V
SS: power supply
Embodiment
Hereinafter with reference to relevant drawings, a kind of electrostatic defending circuit winding structure according to the utility model preferred embodiment is described.
As shown in Figure 4, a kind of electrostatic defending circuit winding structure 3 cooperates with an electrostatic protection element 41, and electrostatic defending circuit winding structure 3 comprises a plurality of conductive layer 31-33.Conductive layer 31 is set on the electrostatic protection element 41 and with electrostatic protection element 41 and is electrically connected, conductive layer 32,33 is arranged on the conductive layer 31 in regular turn, be electrically connected to each other between the conductive layer 31-33, and the length of conductive layer 32,33 or projected area are not more than the length or the projected area of conductive layer 31,32 respectively.
In the present embodiment, electrostatic protection element 41 is set at a substrate 42, and electrostatic protection element 41 can comprise a diode or a transistor (as PMOS or NMOS).Electrostatic protection element 41 is electrically connected by at least one conductive part 34 with its 31 of conductive layer in top, and respectively by conductive part 35-36 electrical connection, conductive part 34-36 can be lead, conductive hole (via) or contacts (contact) between the conductive layer 31-33.
The material of conductive layer 31-33 can be metal or alloy, and electrostatic defending circuit winding structure 3 can be applicable to CMOS (Complementary Metal Oxide Semiconductor) (CMOS), two CMOS (Complementary Metal Oxide Semiconductor) (BiCMOS), GaAs (GaAs) or germanium silicide (SiGe) semiconductor making method.
Shown in Fig. 5,6 and 7, conductive layer 31-33 comprises a plurality of circuit 311-312, circuit 321-322 and circuit 331-332 respectively, circuit 311, circuit 321 are electrically connected to each other with circuit 331, circuit 311 is connected electrically in an end of electrostatic protection element 41, and the length of circuit 321 and circuit 331 or projected area are not more than the length or the projected area of circuit 311 and circuit 321 respectively; Circuit 312, circuit 322 are electrically connected to each other with circuit 332, circuit 312 is connected electrically in the other end of electrostatic protection element 41, the length of circuit 322 and circuit 332 or projected area are not more than the length or the projected area of circuit 312 and circuit 322 respectively, so the stray capacitance between conductive layer 31-33 is reduced.
On the other hand, circuit 321 interlocks areas also less than circuit 311 and circuit 312 staggered areas with circuit 322, so the stray capacitance of conductive layer 32 can be less than the stray capacitance of conductive layer 31.Similarly, the stray capacitance of conductive layer 33 can be less than the stray capacitance of conductive layer 32.Stray capacitance between the different circuit in the same conductive layer (for example circuit 331 and circuit 332) reduces, and more therefore the equivalent capacity of electrostatic defending circuit winding structure reduces.
As shown in Figure 5, circuit 311, circuit 321, circuit 331 are the finger-fork type setting with circuit 312, circuit 322, circuit 332 respectively, and circuit 311 and circuit 312 are connected electrically in two ends of the active member layer (active device layer) of electrostatic protection element 41.Shown in profile, conductive part 36 belows have conductive part 35,34 in regular turn
As shown in Figure 6, compare with Fig. 5, electrostatic defending circuit winding structure 3 further comprises a conductive layer 38 and an input pad (input pad) 30, conductive layer 38 is set on the conductive layer 33, wherein, conductive layer 38 comprises a circuit 381 and a circuit 382, and circuit 381 is electrically connected with circuit 331 by conductive part 37, and circuit 382 is electrically connected with circuit 332 by conductive part 37.Input pad 30 is set on the conductive layer 38 and with the circuit 381 of conductive layer 38 and is electrically connected by conductive part 39 with circuit 382.Compared with prior art, because the length of each circuit 311-332,381-382 or projected area are all few than input pad 30, so the stray capacitance of 30 of each circuit 311-332,381-382 and input pads also can reduce.
Because the discharging current of electrostatic defending circuit flow to substrate 42 by input pad 30, therefore input pad 30 is the highest with the current density of electrostatic protection element 41 top wire winding layers, thereby it is destroyed easily, compared with prior art, electrostatic defending circuit winding structure 3 can disperse electrostatic induced current to arrive each metal level effectively, avoids upper metal layers too high and destroyed because of current density.
As shown in Figure 7, in the present embodiment, circuit 311, circuit 321, circuit 331 are provided with for the square frame alternating expression with circuit 312, circuit 322, circuit 332 respectively, so the stray capacitance between conductive layer 31-33 is reduced.Those skilled in the art all can be in not breaking away from the utility model spirit and category do other variation to electrostatic defending circuit winding structure.For example: circuit 311, circuit 321, circuit 331 also can be the setting of spiral alternating expression with circuit 312, circuit 322, circuit 332 respectively.
As shown in Figure 8, the electrostatic defending circuit winding structure 3 of previous embodiment, input pad 30, electrostatic protection element 41 can be applicable to integrated circuit (IC) chip 4 with substrate 42, electrostatic defending circuit winding structure 3, electrostatic protection element 41 constitute two electrostatic discharge protection circuits 43,44, in addition, integrated circuit (IC) chip 4 further comprises at least one internal circuit 45, and electrostatic discharge protection circuit 43,44 is coupling between input pad 30 and the internal circuit 45.
In electrostatic discharge protection circuit 43, circuit 311 is electrically connected with an end of electrostatic protection element 41, circuit 312 is electrically connected with the other end of electrostatic protection element 41, circuit 331 is electrically connected with circuit 311 by circuit 321, and circuit 332 is electrically connected with circuit 312 by circuit 322, circuit 331 and power supply V
DDBe electrically connected, circuit 332 is electrically connected with input pad 30.In electrostatic discharge protection circuit 44, that different with electrostatic discharge protection circuit 43 is circuit 331 and power supply V
SSBe electrically connected.
Because circuit 311, circuit 321 is not more than the former respectively in regular turn with the length or the projected area of circuit 331, and circuit 312, circuit 322 is not more than the former respectively in regular turn with the length or the projected area of circuit 332, therefore the stray capacitance of the circuit between different conductive layers 31-33 is reduced, if when input pad 30 is arranged at circuit 331 with circuit 332 tops, compared with prior art, stray capacitance between input pad 30 and the conductive layer 33 is also reduced, thereby attenuating electrostatic discharge protection circuit 43, the stray capacitance that produces in 44 is coupled to the influence of internal circuit 45, and then promotes the performance of internal circuit 45.
In sum, have because of foundation is of the present utility model in the integrated circuit (IC) chip of electrostatic defending circuit winding structure, the length of second conductive layer or projected area are not more than the length or the projected area of first conductive layer respectively, so can reduce the stray capacitance between conductive layer, and then lower the influence of electrostatic discharge protection circuit for institute's distribution subsystem, promote the performance of institute's distribution subsystem.
Claims (10)
1. integrated circuit (IC) chip is characterized in that comprising:
At least one input pad;
At least one internal circuit; And
One electrostatic discharge protection circuit, be coupling between this input pad and this internal circuit, comprise an electrostatic protection element, one first conductive layer and one second conductive layer, this first conductive layer is set on this electrostatic protection element and with this electrostatic protection element and is electrically connected, this second conductive layer, be set on this first conductive layer and and be electrically connected, and the length of this second conductive layer or projected area are not more than the length or the projected area of this first conductive layer respectively with this first conductive layer and this input pad.
2. integrated circuit (IC) chip according to claim 1 is characterized in that wherein the length of this second conductive layer or length or the projected area that projected area is not more than this input pad respectively.
3. integrated circuit (IC) chip according to claim 1 is characterized in that wherein this first conductive layer comprises:
One first circuit, it is electrically connected to an end of this electrostatic protection element; And
One second circuit, it is electrically connected to the other end of this electrostatic protection element.
4. integrated circuit (IC) chip according to claim 3 is characterized in that wherein this first circuit and this second circuit are the finger-fork type setting.
5. integrated circuit (IC) chip according to claim 3 is characterized in that wherein this first circuit and this second circuit are the setting of square frame alternating expression.
6. integrated circuit (IC) chip according to claim 3 is characterized in that wherein this second conductive layer comprises:
One tertiary circuit, it is electrically connected to this first circuit, and the length of this tertiary circuit or projected area are not more than the length or the projected area of this first circuit respectively; And
One the 4th circuit, it is electrically connected to this second circuit, and claims (replacing page or leaf) of the length of the 4th circuit or the modification of answer Notification to Make Rectification
Projected area is not more than the length or the projected area of this second circuit respectively.
7. integrated circuit (IC) chip according to claim 1 is characterized in that further comprising:
One the 3rd conductive layer is set between this second conductive layer and this input pad, and is electrically connected with this second conductive layer and this input pad.
8. integrated circuit (IC) chip according to claim 1 is characterized in that wherein this electrostatic protection element comprises a diode.
9. integrated circuit (IC) chip according to claim 1 is characterized in that wherein this electrostatic protection element comprises a transistor.
10. integrated circuit (IC) chip according to claim 1 is characterized in that wherein being electrically connected by at least one lead, conductive hole or contact and realizes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520037729 CN2906928Y (en) | 2005-12-28 | 2005-12-28 | Integrated circuit chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520037729 CN2906928Y (en) | 2005-12-28 | 2005-12-28 | Integrated circuit chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2906928Y true CN2906928Y (en) | 2007-05-30 |
Family
ID=38115572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520037729 Expired - Lifetime CN2906928Y (en) | 2005-12-28 | 2005-12-28 | Integrated circuit chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2906928Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109216345A (en) * | 2017-07-07 | 2019-01-15 | 奇景光电股份有限公司 | The guard method of ESD protection device, integrated circuit and its core circuit |
| CN109411278A (en) * | 2017-08-16 | 2019-03-01 | 致伸科技股份有限公司 | The press-key structure of anti-electrostatic-discharge |
-
2005
- 2005-12-28 CN CN 200520037729 patent/CN2906928Y/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109216345A (en) * | 2017-07-07 | 2019-01-15 | 奇景光电股份有限公司 | The guard method of ESD protection device, integrated circuit and its core circuit |
| CN109216345B (en) * | 2017-07-07 | 2020-10-02 | 奇景光电股份有限公司 | Electrostatic discharge protection architecture, integrated circuit and protection method of core circuit thereof |
| CN109411278A (en) * | 2017-08-16 | 2019-03-01 | 致伸科技股份有限公司 | The press-key structure of anti-electrostatic-discharge |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20070530 |
|
| EXPY | Termination of patent right or utility model |