CN109216345A - The guard method of ESD protection device, integrated circuit and its core circuit - Google Patents
The guard method of ESD protection device, integrated circuit and its core circuit Download PDFInfo
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- CN109216345A CN109216345A CN201710549844.5A CN201710549844A CN109216345A CN 109216345 A CN109216345 A CN 109216345A CN 201710549844 A CN201710549844 A CN 201710549844A CN 109216345 A CN109216345 A CN 109216345A
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- 230000004224 protection Effects 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims description 19
- 125000006850 spacer group Chemical group 0.000 claims abstract description 58
- 206010003497 Asphyxia Diseases 0.000 claims abstract description 56
- 230000006378 damage Effects 0.000 claims abstract description 13
- 208000027418 Wounds and injury Diseases 0.000 claims abstract description 12
- 208000014674 injury Diseases 0.000 claims abstract description 12
- 230000003068 static effect Effects 0.000 claims description 42
- 230000005611 electricity Effects 0.000 claims description 6
- 238000013439 planning Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 230000009979 protective mechanism Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 210000000080 chela (arthropods) Anatomy 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
For protect the core circuit of integrated circuit from conductive spacer received electrostatic discharge event injury ESD protection device, it includes the first conductive layer, strangulation element, the first electrical junctions with the second electrical junction.First conductive layer is formed in the lower section of the conductive spacer, and includes the first current-carrying part, hermetic section and the second current-carrying part.The hermetic section is surrounded by first current-carrying part and second current-carrying part.First current-carrying part is electrically connected between the conductive spacer and second current-carrying part.The strangulation element is to the strangulation electrostatic discharge event.First electrical junction is coupled between first current-carrying part of first conductive layer and the strangulation element.Second electrical junction is coupled between second current-carrying part of first conductive layer and the core circuit.
Description
Technical field
The present invention relates to electrostatic discharge protective (electrostatic discharge protection, ESD
Protection), in particular to a kind of integrated to protect using the floor planning design (floor plan design) of conductive layer
The core circuit of circuit from the injury of electrostatic discharge event ESD protection device and its relevant integrated circuit with it is quiet
Discharge of electricity means of defence.
Background technique
In order to avoid integrated circuit core circuit (core circuit) because of static discharge current (ESD current)
Reason and damage, integrated circuit can be using the clamped circuit (clamp circuit) being disposed therein come strangulation static discharge
Electric current.Once integrated circuit can not simultaneously be kept away however, static discharge current first flowed into core circuit before flowing into the clamped circuit
Exempt from injury of the core circuit by static discharge.Therefore, it is necessary to a kind of electrostatic discharge protective mechanism of innovation to put to promote electrostatic
The ability of electricity protection.
Summary of the invention
In view of this, one of the objects of the present invention is to provide a kind of floor plannings using conductive layer to design (floor
Plan design) protect the core circuit of integrated circuit from the ESD protection device of the injury of electrostatic discharge event,
And its relevant integrated circuit and electrostatic charge protection method, to solve the above problems.
An embodiment according to the present invention, discloses a kind of ESD protection device.The ESD protection device is used
Come protect a core circuit of an integrated circuit from a conductive spacer a received electrostatic discharge event injury.The electrostatic
Electric discharge protection structure includes one first conductive layer, a strangulation element, one first electrical junction and one second electric connection
Portion.First conductive layer is formed in the lower section of the conductive spacer, wherein first conductive layer include one first current-carrying part, one every
Part and one second current-carrying part, the hermetic section are surrounded by first current-carrying part and second current-carrying part absolutely,
And first current-carrying part is electrically connected between the conductive spacer and second current-carrying part.The strangulation element is to strangulation
The electrostatic discharge event.First electrical junction is coupled to first current-carrying part and the strangulation element of first conductive layer
Between.Second electrical junction is coupled between second current-carrying part of first conductive layer and the core circuit.
An embodiment according to the present invention, discloses a kind of integrated circuit.The integrated circuit includes a conductive spacer, a core
Electrocardio road and an ESD protection device.The ESD protection device is coupled to the conductive spacer and the core circuit,
To protect the core circuit from the conductive spacer a received electrostatic discharge event injury.The electrostatic discharge protective frame
Structure includes one first conductive layer, a strangulation element, one first electrical junction and one second electrical junction.This first is led
Electric layer is formed in the lower section of the conductive spacer, wherein first conductive layer include one first current-carrying part, a hermetic section and
One second current-carrying part, the hermetic section be surrounded by first current-carrying part with second current-carrying part and this first
Current-carrying part is electrically connected between the conductive spacer and second current-carrying part.The strangulation element is to the strangulation static discharge
Event.First electrical junction is coupled between first current-carrying part of first conductive layer and the strangulation element.This
Two electrical junctions are coupled between second current-carrying part of first conductive layer and the core circuit.
An embodiment according to the present invention discloses a kind of for protecting a core circuit of an integrated circuit to lead from one
Electrical pad piece the injury of a received electrostatic discharge event method.This method comprises the steps of under the conductive spacer
Side provides one first conductive layer, and wherein first conductive layer is led comprising one first current-carrying part, a hermetic section and one second
Electric part, the hermetic section are to be surrounded by first current-carrying part with second current-carrying part and first current-carrying part
It is electrically connected between the conductive spacer and second current-carrying part；One first electrical junction is coupled to first conductive layer
First current-carrying part and a strangulation element between, wherein the strangulation element be used for the strangulation electrostatic discharge event；And it will
One second electrical junction is coupled between second current-carrying part of first conductive layer and the core circuit.
Electrostatic discharge protective mechanism provided by the present invention can by the design of conductive path (such as: conductive layer/metal layer
Floor planning/layout designs), static discharge current is preferentially directed to strangulation element, and then prevent static discharge current straight
Connect inflow core circuit.In addition, electrostatic discharge protective mechanism provided by the present invention can current carrying capability (its with higher
Can avoid/reduce electromigration effect) and lesser parasitic capacitance.
Detailed description of the invention
Fig. 1 is the function block schematic diagram of an embodiment of integrated circuit of the present invention.
Fig. 2 is the schematic diagram of an embodiment of a partial structurtes of ESD protection device shown in FIG. 1.
Fig. 3 is the schematic diagram for the embodiment that a floor planning of conductive layer shown in Fig. 2 is laid out.
Fig. 4 is the schematic diagram for the embodiment that a floor planning of conductive layer shown in Fig. 2 is laid out.
Fig. 5 is the schematic diagram for the embodiment that a floor planning of conductive layer shown in Fig. 2 is laid out.
Fig. 6 is the schematic diagram for the embodiment that a floor planning of conductive layer shown in Fig. 2 is laid out.
Fig. 7 is used to protect a core circuit of an integrated circuit from the received electrostatic of a conductive spacer for the present invention
The flow chart of one embodiment of the method for the injury of electric discharge event.
Description of symbols:
100 integrated circuits
102 conductive spacers
104 core circuits
110 ESD protection devices
122,124 strangulation element
231~237,431,531,631 conductive layers
241,242,243 electrical junction
352,452,552,652 first current-carrying part
353,453,553,653 hermetic section
354,454,554,654 second current-carrying part
710,720,730 step
A11, A12, A21, A22, A31, A32, A41, A42 conduction orientation
VDD supply voltage
GND ground voltage
EESDElectrostatic discharge event
IESDStatic discharge current
D1, D2 diode
Specific embodiment
Some vocabulary has been used in specification and subsequent claim to censure specific element.Affiliated neck
Has usually intellectual in domain, it is to be appreciated that manufacturer may call same element with different nouns.This specification
And subsequent claim is in such a way that the difference of title is as distinct elements, but functionally with element
Difference as difference benchmark.Mentioned "comprising" is an open use throughout the specification and claims
Language, therefore should be construed to " including but not limited to ".In addition, " coupling " word herein be comprising it is any directly and indirectly electrically connect
Take over section.Therefore, if it is described herein that a first device is electrically connected at a second device, then representing the first device can directly connect
It is connected to the second device, or is coupled indirectly to the second device by other devices or connection means.
Fig. 1 is the function block schematic diagram of an embodiment of integrated circuit of the present invention.Integrated circuit 100 may include (but not
It is limited to) conductive spacer (conductive pad) 102, one core circuit 104 and an ESD protection device (ESD
protection structure)110.Core circuit 104 is coupled between a supply voltage VDD and a ground voltage GND, and
Can according to conductive spacer 102 received different control signal (not being illustrated in Fig. 1) execute corresponding function/operation
(such as timing control (timing control) or source drive (source driving)).ESD protection device 110
It is coupled to conductive spacer 102 and core circuit 104, and can be used to protect core circuit 104 received from 102 institute of conductive spacer
One electrostatic discharge event EESDInjury.In this embodiment, ESD protection device 110 may include (but being not limited to) pincers
Element 122 processed and a strangulation element 124, wherein strangulation element 122 is coupled between conductive spacer 102 and supply voltage VDD
With strangulation electrostatic discharge event EESD, and strangulation element 124 is then coupled between conductive spacer 102 and ground voltage GND with pincers
Electrostatic discharge event E processedESD.For example (however, the present invention is not limited thereto), strangulation element 122 can be implemented by a diode D1,
And/or strangulation element 124 can be implemented by a diode D2.
In order to avoid in response to electrostatic discharge event EESDGenerated static discharge current IESDIt is (all without a clamped circuit
Such as strangulation element 122/124) if flow directly into core circuit 104, ESD protection device 110 can be using conducting path/lead
Design (such as conductive layer/metal layer floor planning/layout (floorplan/ of path (conductive path)
Layout) design) control static discharge current IESDFlow direction, it is ensured that static discharge current IESDStrangulation electricity will not flowed into
Core circuit 104 is first flowed into before road.Significantly, since diode D1 (strangulation element 122) shown in FIG. 1 is involved
Static discharge protection path and its relevant operation put with electrostatic involved in diode D2 shown in FIG. 1 (strangulation element 124)
Electricity protection path and its relevant operation are similar/identical, are involved by diode D1 shown in FIG. 1 below for simplicity
Static discharge protection path illustrate electrostatic discharge protective mechanism provided by the present invention.Further instruction is as follows.
Please come together with Fig. 1 refering to Fig. 2.Fig. 2 is the one of a partial structurtes of ESD protection device 110 shown in FIG. 1
The schematic diagram of embodiment.In this embodiment, conductive spacer 102 is to be coupled to static discharge via an electrical junction 241
Protection structure 110, wherein electrical junction 241 can be by static discharge current IESDConducted by conductive spacer 102/it is directed to electrostatic
Discharge protection structure 110.In addition to diode D1, ESD protection device 110 separately may include (but being not limited to) multiple conductive layers
231~237 (such as multiple metal layers), an electrical junction 242 and an electrical junction 243, plurality of conductive layer 231
~237 are both formed in the lower section of conductive spacer 102, and each conductive layer among multiple conductive layers 231~237 is electrically connected to
Between conductive spacer 102 and diode D1.Conductive layer 231 is to be coupled to diode D1 via electrical junction 242 to provide
Conducting path between conductive spacer 102 and diode D1, and core circuit 104 is coupled to via electrical junction 243
To provide the conducting path between conductive spacer 102 and core circuit 104.
By the design of conducting path, ESD protection device 110 can ensure that static discharge current IESDIt will not flow into
Core circuit 104 is just first flowed into before diode D1.Referring to Figure 2 together with Fig. 3.Fig. 3 is conductive layer 231 shown in Fig. 2
One floor planning is laid out the schematic diagram of an embodiment of (floorplan layout).In embodiment shown in Fig. 3, conductive layer
231 may include (but being not limited to) one first current-carrying part (first conductive portion) 352, one hermetic section
(insulating portion) 353 and one second current-carrying part 354, wherein hermetic section 353 is by the first current-carrying part
352 are surrounded and the first current-carrying part 352 is electrically connected to conductive spacer 102 and second conductive with the second current-carrying part 354
Between part 354.In addition, electrical junction 242 be coupled to conductive layer 231 the first current-carrying part 352 and diode D1 it
Between, and electrical junction 243 is then coupled between the second current-carrying part 354 of conductive layer 231 and core circuit 104.
In the case of an electric current flows into conductive layer 231 via conductive spacer 102, since conductive layer 231 is via first
Current-carrying part 352 is electrically connected with conductive spacer 102, therefore the electric current may flow into diode from the first current-carrying part 352
D1 or core circuit 104.For example (however, the present invention is not limited thereto), the electric current can sequentially via the first current-carrying part 352 and
Electrical junction 242 and flow into diode D1 (correspond to one first conducting path), or can be sequentially via the first current-carrying part
352, the second current-carrying part 354 and electrical junction 243 and flow into core circuit 104 (correspond to one second conducting path).Value
It obtains it is noted that hermetic section 353 can cause to flow into the electric current of conductive layer 231 towards the direction (conduction of electrical junction 242
Direction A11) it conducts, rather than it is directed towards the direction (conduction orientation A12) of electrical junction 243 to conduct.Due to electrical property
Interconnecting piece 242 is electrically connected to diode D1, therefore, should once the electric current flows through the first current-carrying part 352 of conductive layer 231
The whole (or almost all) of electric current can flow into diode D1 via electrical junction 242.In other words, above-mentioned first conducting pathway
Diameter is the main conduction path of the electric current.
Therefore, as electrostatic discharge event EESDWhen generation, conductive layer 231 can be received using the first current-carrying part 352 come self-conductance
The static discharge current I of electrical pad piece 102ESD, and electrical junction 242 can be by static discharge current IESDIt is (all or almost complete
The static discharge current I in portionESD) guiding/conduction inhibits static discharge current I to diode D1ESD.Pass through setting for conducting path
Meter, conductive layer 231 can be preferentially by static discharge current IESDVia the first current-carrying part 352 and 242 guidings of electrical junction/biography
It is directed at diode D1, and then avoids static discharge current IESDIt flows directly into core circuit 104 rather than first flows into diode D1.
In other words, in static discharge current IESDIt is flowed via the first current-carrying part 352, the second current-carrying part 354 with electrical junction 243
Before entering core circuit 104, electrical junction 242 can be by static discharge current I all or almost allESDGuiding/conduction is extremely
Diode D1.In this way, which ESD protection device 110 can ensure that static discharge current I all or almost allESDFirst
It flows into diode D1 rather than first flows into core circuit 104.
In this embodiment, hermetic section 353 can (such as an air-gap be opened by an opening (opening) of conductive layer 231
Mouthful) implement.However, this is not used as limitation of the invention.Such as: it is electrically insulated material using one
(electrically insulating material) (a such as dielectric material (dielectric material)) carrys out implementation
Hermetic section 353 is also feasible out.Another example is: hermetic section 353 can also be the opening filled up by the material that is electrically insulated.Only
Wanting conductive layer 231 may include that the whole (or almost all) of a hermetic section received electric current to prevent flows directly into electrical connect
Socket part 243 is (also that is, along conduction orientation A12) rather than flowing into electrical junction 242, relevant variation follows this in design
The spirit of invention and fall into scope of the invention.
In addition, the conductive layer 231 for being coupled to core circuit 104 can be formed at other in embodiment shown in Fig. 2
One top conductive layer (top conductive layer) of the top of conductive layer (also that is, multiple conductive layers 232~237), thus
Can have thicker thickness, higher current carrying capability (current capability) (to can avoid/reduction electromigration effect
(electromigration effect, EM effect)) and lesser parasitic capacitance.It note that this is not used as
Limitation of the invention.In a design variation, the conductive layer for being coupled to core circuit 104 is also possible to multiple conductive layers 232
~237 one rather than top conductive layer.In another design variation, the conductive layer for being coupled to core circuit 104 be can be
With a conductive layer of maximum thickness among multiple conductive layers 231~237.
The above is only to need for explanation, is not used as limitation of the invention.For example, shape shown in Fig. 2
Limitation of the invention is not used as at the number of plies of the conductive layer between conductive spacer 102 and diode D1.In certain realities
It applies in example, it can be in a conductive spacer (conductive spacer 102 such as shown in Fig. 2) and a strangulation element (two pole such as shown in Fig. 2
Pipe D1) between form one or more layers conductive layer.In addition, in some embodiments, strangulation element 122/124 shown in FIG. 1
It can also be implemented by other kinds of clamped circuit.
Floor planning layout shown in Fig. 3 is only to need for explanation, is not used as limitation of the invention.Fig. 4~Fig. 6
Depict the schematic diagram of multiple embodiments of the floor planning layout of conductive layer 231 shown in Fig. 2.In embodiment shown in Fig. 4
In, the hermetic section 453 of conductive layer 431 can cause the electric current (such as static discharge current) for flowing into the first current-carrying part 452
Electrical junction 242 (conduction orientation A21) is flowed to/flowed through, prevents the electric current from directly flowing to electrical property via the second current-carrying part 454
Interconnecting piece 243 (conduction orientation A22).In embodiment shown in fig. 5, the hermetic section 553 of conductive layer 531 can cause inflow
An electric current (such as static discharge current) for one current-carrying part 552 flows to/flows through electrical junction 242 (conduction orientation A31), prevents
Only the electric current directly flows to electrical junction 243 (conduction orientation A32) via the second current-carrying part 554.In implementation shown in fig. 6
In example, the hermetic section 653 of conductive layer 631 can cause an electric current (such as static discharge electricity for flowing into the first current-carrying part 652
Stream) electrical junction 242 (conduction orientation A41) is flowed to/flows through, prevent the electric current from directly flowing to via the second current-carrying part 654
Electrical junction 243 (conduction orientation A42).After related description of the skilled persons via reading FIG. 1 to FIG. 3, Ying Ke
Understand Fig. 4~electrostatic discharge protective shown in fig. 6 mechanism can preferentially by static discharge current guiding/conduction to strangulation element, into
And static discharge current is avoided to flow directly into core circuit, it is that event further instruction just repeats no more herein.
Electrostatic discharge protective mechanism provided by the present invention can simply be summarized in Fig. 7.Fig. 7 is that the present invention is used to protect a collection
At circuit a core circuit from a conductive spacer a received electrostatic discharge event injury method an embodiment
Flow chart.For convenience of explanation, collocation Fig. 2 illustrates shown in Fig. 7 with electrostatic discharge protection structure 110 shown in Fig. 3 below
Method.If then step is not necessarily intended to come according to order shown in Fig. 7 in addition, obtained result is substantially roughly the same
Execute it.For example, certain steps can be assigned in wherein.Method shown in Fig. 7 can be simply summarized as follows.
Step 710: providing conductive layer 231 in the lower section of conductive spacer 102, wherein conductive layer 231 may include the first conduction
Part 352, hermetic section 353 and the second current-carrying part 354.Hermetic section 353 is to be led by the first current-carrying part 352 with second
Electric part 354 is surrounded and the first current-carrying part 352 be electrically connected to conductive spacer 102 and the second current-carrying part 354 it
Between.
Step 720: electrical junction 242 is coupled to the first current-carrying part 352 and a strangulation element of conductive layer 231
Between (diode D1), wherein the strangulation element is to the strangulation electrostatic discharge event.
Step 730: electrical junction 243 is coupled to the second current-carrying part 354 and core circuit 104 of conductive layer 231
Between.
In an implementation example, when the electrostatic discharge event occurs, this method can utilize the first conduction of conductive layer 231
Part 352 is received because should a static discharge current caused by electrostatic discharge event.In addition, the static discharge current via
Before second current-carrying part 354 of conductive layer 231 flows into core circuit 104 with electrical junction 243, this method can be using electrically
Interconnecting piece 242 is by the static discharge current guiding/conduction to the strangulation element.Since skilled persons are via reading FIG. 1 to FIG. 6
Related description after, it should be appreciated that in process shown in Fig. 7 each step details of operation, therefore further instruction is herein just
It repeats no more.
In conclusion electrostatic discharge protective mechanism provided by the present invention can by the design of conductive path (such as: it is conductive
Floor planning/layout designs of layer/metal layer), static discharge current is preferentially directed to strangulation element, and then prevent electrostatic from putting
Electric current flows directly into core circuit.In addition, electrostatic discharge protective mechanism provided by the present invention can electric current with higher hold
By ability (it can avoid/reduction electromigration effect) and lesser parasitic capacitance.
Claims (18)
1. a kind of ESD protection device, which is used to that a core circuit of an integrated circuit is protected to exempt from
By a conductive spacer a received electrostatic discharge event injury, which includes:
One first conductive layer, is formed in the lower section of the conductive spacer, and wherein first conductive layer includes one first current-carrying part, one
Hermetic section and one second current-carrying part, the hermetic section are wrapped by first current-carrying part and second current-carrying part
It encloses and first current-carrying part is electrically connected between the conductive spacer and second current-carrying part；
One strangulation element, to the strangulation electrostatic discharge event；
One first electrical junction is coupled between first current-carrying part of first conductive layer and the strangulation element；And
One second electrical junction is coupled between second current-carrying part of first conductive layer and the core circuit.
2. ESD protection device as described in claim 1, additionally comprises:
At least one second conductive layer, is formed in the lower section of the conductive spacer, wherein this at least one second conductive layer is electrically connected to
Between the conductive spacer and the strangulation element；
Wherein first conductive layer be formed in this at least the top of one second conductive layer one top conductive layer.
3. ESD protection device as described in claim 1, additionally comprises:
At least one second conductive layer, is formed in the lower section of the conductive spacer, wherein this at least one second conductive layer is electrically connected to
Between the conductive spacer and the strangulation element；
Wherein the thickness of first conductive layer is greater than the thickness of each second conductive layer among at least one second conductive layer.
4. ESD protection device as described in claim 1, wherein when the electrostatic discharge event occurs, first conduction
Layer can be received using first current-carrying part because should a static discharge current caused by electrostatic discharge event；And it is quiet at this
Before discharge of electricity electric current flows into the core circuit via second current-carrying part and second electrical junction, which connects
The static discharge current can be directed to the strangulation element by socket part.
5. ESD protection device as described in claim 1, wherein the hermetic section is an opening of first conductive layer.
6. ESD protection device as described in claim 1, wherein the strangulation element includes a diode.
7. a kind of integrated circuit, includes:
One conductive spacer；
One core circuit；And
One ESD protection device is coupled to the conductive spacer and the core circuit, to protect the core circuit from this
Conductive spacer a received electrostatic discharge event injury, wherein the ESD protection device include:
One first conductive layer, is formed in the lower section of the conductive spacer, and wherein first conductive layer includes one first current-carrying part, one
Hermetic section and one second current-carrying part, the hermetic section are wrapped by first current-carrying part and second current-carrying part
It encloses and first current-carrying part is electrically connected between the conductive spacer and second current-carrying part；
One strangulation element, to the strangulation electrostatic discharge event；One first electrical junction is coupled to being somebody's turn to do for first conductive layer
Between first current-carrying part and the strangulation element；And
One second electrical junction is coupled between second current-carrying part of first conductive layer and the core circuit.
8. integrated circuit as claimed in claim 7, wherein the ESD protection device additionally comprises:
At least one second conductive layer, is formed in the lower section of the conductive spacer, wherein this at least one second conductive layer is electrically connected to
Between the conductive spacer and the strangulation element；
Wherein first conductive layer be formed in this at least the top of one second conductive layer one top conductive layer.
9. integrated circuit as claimed in claim 7, wherein the ESD protection device additionally comprises:
At least one second conductive layer, is formed in the lower section of the conductive spacer, wherein this at least one second conductive layer is electrically connected to
Between the conductive spacer and the strangulation element；
Wherein the thickness of first conductive layer is greater than the thickness of each second conductive layer among at least one second conductive layer.
10. integrated circuit as claimed in claim 7, wherein first conductive layer can benefit when the electrostatic discharge event occurs
It is received with first current-carrying part because should a static discharge current caused by electrostatic discharge event；And in the static discharge
Before electric current flows into the core circuit via second current-carrying part and second electrical junction, the first electrical junction meeting
The static discharge current is directed to the strangulation element.
11. integrated circuit as claimed in claim 7, wherein the hermetic section is an opening of first conductive layer.
12. integrated circuit as claimed in claim 7, wherein the strangulation element includes a diode.
13. a kind of for protecting a core circuit of an integrated circuit from the received electrostatic discharge event of conductive spacer institute
Injury method, comprise the steps of
One first conductive layer is provided in the lower section of the conductive spacer, wherein first conductive layer includes one first current-carrying part, one
Hermetic section and one second current-carrying part, the hermetic section are wrapped by first current-carrying part and second current-carrying part
It encloses and first current-carrying part is electrically connected between the conductive spacer and second current-carrying part；
One first electrical junction is coupled between first current-carrying part of first conductive layer and a strangulation element, wherein
The strangulation element is used for the strangulation electrostatic discharge event；And
One second electrical junction is coupled between second current-carrying part of first conductive layer and the core circuit.
14. method as claimed in claim 13, additionally comprises the following steps:
In the conductive spacer lower section provide at least one second conductive layer, wherein this at least one second conductive layer is electrically connected to this
Between conductive spacer and the strangulation element；
Wherein first conductive layer be formed in this at least the top of one second conductive layer one top conductive layer.
15. method as claimed in claim 13, additionally comprises the following steps:
In the conductive spacer lower section provide at least one second conductive layer, wherein this at least one second conductive layer is electrically connected to this
Between conductive spacer and the strangulation element；
Wherein the thickness of first conductive layer is greater than the thickness of each second conductive layer among at least one second conductive layer.
16. method as claimed in claim 13, additionally comprises the following steps:
When the electrostatic discharge event occurs, received using first current-carrying part of first conductive layer because should static discharge
A static discharge current caused by event；And
Before the static discharge current flows into the core circuit via second current-carrying part and second electrical junction, benefit
The static discharge current is directed to the strangulation element with first electrical junction.
17. the method as described in claim 1, wherein the hermetic section is an opening of first conductive layer.
18. the method as described in claim 1, wherein the strangulation element includes a diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710549844.5A CN109216345B (en) | 2017-07-07 | 2017-07-07 | Electrostatic discharge protection architecture, integrated circuit and protection method of core circuit thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710549844.5A CN109216345B (en) | 2017-07-07 | 2017-07-07 | Electrostatic discharge protection architecture, integrated circuit and protection method of core circuit thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109216345A true CN109216345A (en) | 2019-01-15 |
| CN109216345B CN109216345B (en) | 2020-10-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710549844.5A Active CN109216345B (en) | 2017-07-07 | 2017-07-07 | Electrostatic discharge protection architecture, integrated circuit and protection method of core circuit thereof |
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| CN (1) | CN109216345B (en) |
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