CN2884534Y - 结构改良的发光二极管 - Google Patents

结构改良的发光二极管 Download PDF

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CN2884534Y
CN2884534Y CNU2005201430874U CN200520143087U CN2884534Y CN 2884534 Y CN2884534 Y CN 2884534Y CN U2005201430874 U CNU2005201430874 U CN U2005201430874U CN 200520143087 U CN200520143087 U CN 200520143087U CN 2884534 Y CN2884534 Y CN 2884534Y
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emitting diode
light
substrate
structure improved
pedestal
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何英明
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GUANGNAN SCIENCE AND TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

本实用新型涉及一种结构改良的发光二极管，主要设置有具多个接点的基板，且基板设置有一个或一个以上贯穿基板的透孔，而透孔有收容基座，且基座放置有发光二极管晶粒，发光二极管晶粒的电极与导线一侧相连接，并于导线另一侧与基板上的接点相连接，使发光二极管晶粒与基板所设置的接点呈电性连接，当发光二极管照射光线时，可利用基座提供发光二极管更多的电流，以及利用基座使发光二极管晶粒达到散热的功能，再者，基板所设置的透孔可以聚集由发光二极管晶粒所照射出的光线，以达到增强发光二极管晶粒所照射出的光线强度。

Description

结构改良的发光二极管
技术领域
本实用新型涉及一种结构改良的发光二极管，尤指一种可增强发光二极管晶粒光线照射的强度的发光二极管结构，且该发光二极管结构亦可提供更多的电流以及使发光二极管晶粒达到散热的功效。
背景技术
由于发光二极管(Light  Emitting  Diode；LED)具有使用寿命长，且体积轻巧保存容易，以及耗电量低等的优点，而且不含水银等有害物质，使环境不会受到污染，因此现今的市场对于发光二极管的发展寄予极大的厚望。
请参阅图7所示，为现有发光二极管的结构示意图，由图中可清楚看出，该现有发光二极管结构由印刷电路板A1以及发光二极管A2所组成，而发光二极管A2则设置有具导电材质的铁制或铜制支架A11，且铁制或铜制支架A11穿过印刷电路板A1，并利用焊锡A12将铁制或铜制支架A11焊接于印刷电路板A1的另一面，而因铁制或铜制支架A11利用环氧树脂为封装材料，故有散热不易的严重致命伤，又因发光二极管A2的操作温度与其亮度有绝对的关系，因此，散热是否良好便成为判断发光二极管结构好坏的重要依据。
请参阅图8所示，为另一现有发光二极管的结构示意图，由图中可清楚看出，该现有发光二极管结构由印刷电路板B1、发光二极管B2、导线B3以及反射盖B4所组成，该发光二极管结构设置有具导电接点B11的印刷电路板B1，且印刷电路板B1上可放置发光二极管B2，而发光二极管B2连接于导线B3一侧，且导线B3于远离发光二极管B2的一侧与印刷电路板B1所设置的导电接点B11相连接，当发光二极管B2产生光线后，可通过反射盖B4聚集光线，亦即此发光二极管必须组装印刷电路板B1以及反射盖B4后才可使用，不仅耗费组装时间且亦增加过多的制造成本。
发明内容
本实用新型的主要目的在于克服现有技术的不足与缺陷，提出一种结构改良的发光二极管，其基板所设置的透孔收容有基座，并利用基座放置发光二极管晶粒，使发光二极管晶粒通过基座达到散热的功能，且该基座亦可提供发光二极管较大的电流，再者，该基板的板材颜色可为白色、银色等，使透孔表面可反射发光二极管晶粒所照射出来的光线，并增加光的使用效率，而透孔表面亦可涂设有金属层，使发光二极管晶粒所照射出来的光线经由透孔反射后聚集起来，以达到强化发光二极管晶粒所照射出的光线亮度。
为达上述目的，本实用新型提供一种结构改良的发光二极管，该结构改良的发光二极管设置有基板、基座以及发光二极管晶粒；其中，该基板设有一个或一个以上贯穿基板的透孔，且于基板表面设置有多个接点；该基座收容于贯穿基板的透孔内；该发光二极管晶粒放置于基座上，且发光二极管晶粒可利用导线与基板所设置的接点呈电性连接。
附图说明
图1为本实用新型较佳实施例的立体示意图；
图2为本实用新型较佳实施例的剖面图；
图3为本实用新型较佳实施例于使用时的示意图；
图4为本实用新型另一较佳实施例的剖面图；
图5为本实用新型再一较佳实施例的立体示意图；
图6为本实用新型再一较佳实施例的剖面图；
图7为现有发光二极管的结构示意图；
图8为另一现有发光二极管的结构示意图。
图中符号说明
1     基板
11    透孔
12    接点
2     基座
21    抵持部
3     发光二极管晶粒
31    导线
A1    印刷电路板
A11   支架
A12   焊锡
A2    发光二极管
B1    印刷电路板
B11   导电接点
B2    发光二极管
B3    导线
B4    反射盖
具体实施方式
为达成上述目的及功效，本实用新型所采用的目的、构造技术特征以及其功效，结合附图就本实用新型的较佳实施例详加说明其特征与功能如下，以利完全了解。
请同时参阅图1、2所示，为本实用新型较佳实施例的立体示意图以及剖面图，由图中可清楚看出，本实用新型的发光二极管于基板1上具有一个或一个以上贯穿基板1的透孔11，并于基板1表面设置有多个接点12，且基座2收容贯穿于基板1的透孔11内，而基座2可放置有发光二极管晶粒3，且发光二极管晶粒3与导线31一端相连接，并于导线31另一端与基板1所设置的接点12相连接，使发光二极管晶粒3与基板1所设置的接点12通过导线31呈电性连接。
而上述的详细说明中，该基板1可进一步为印刷电路板，而基座2可进一步为金属所制成，且导线31亦可进一步为金线或铝线，以增加发光二极管的适用性与适用范围，然而，非因此即局限本实用新型的保护范围，如利用其它修饰及等效结构变化，均应同理包含于本实用新型的专利范围内。
请参阅图3所示，为本实用新型较佳实施例于使用时的示意图，由图中可清楚看出，本实用新型通过导线31导通设置于基板1上的接点12与放置于基座2上的发光二极管晶粒3间的电流后，则发光二极管晶粒3因电流流通而产生光线，而部分光线将利用透孔11而使光源聚集，以增强发光二极管照射出的光源。
同时参阅图4、5以及图6所示，为本实用新型另一较佳实施例的剖面图、再一较佳实施例的立体示意图以及再一较佳实施例的剖面图，由图中可清楚看出，该发光二极管所设置的透孔11除可为一侧开口较宽且另侧逐渐缩口变窄外，该透孔11亦可为圆柱形，且圆柱形顶端逐渐向外扩大(如图4所示)，再者，收容于基板1所设置的透孔11内的基座2可进一步为金属所制成，而基座2可进一步设置有与基板1的底部相抵持的抵持部21(如图5、6所示)，以加强发光二极管晶粒3的散热效果，并提供发光二极管更多的电流，此外，在基板1所设置的透孔11以及于放置有发光二极管晶粒3的基座2表面均可进一步涂设有具反射功能的金属层，例如银或锡，以加强发光二极管晶粒3所照射的光线的强度，然而，非因此即局限本实用新型的保护范围，如利用其它修饰及等效结构变化，均应同理包含于本实用新型的专利范围内。
综合上述的详细说明，本实用新型的结构改良的发光二极管于实际使用时具有以下的优点：
(一)本实用新型于基板1所形成的透孔11内收容有基座2，而基座2放置有发光二极管晶粒3，使发光二极管晶粒3透过基座2而达到散热的功能，且亦可通过基座2提供发光二极管更多的电流，以解决现有装置散热不易以及电流流量过小的缺陷。
(二)本实用新型于基板1上设置有透孔11，且透孔11本身即可聚集由发光二极管晶粒3产生的光线，以解决现有发光二极管结构需另行制造具聚集光线的框架，以及增加制造成本的缺陷。
(三)本实用新型为可利用基板1所设置的透孔11进行光线的聚集，以增强由发光二极管晶粒3所照射出来的光线强度。
但是，以上所述仅为本实用新型的较佳实施例，非因此即局限本实用新型的专利范围，故举凡运用本实用新型说明书及附图内容所为之简易修饰及等效结构变化，均应同理包含于本实用新型的专利范围内。

Claims (8)

1.一种结构改良的发光二极管，该结构改良的发光二极管设置有基板、基座以及发光二极管晶粒；其特征在于：
该基板设有一个或一个以上贯穿基板的透孔，且于基板表面设置有多个接点；
该基座收容于贯穿基板的透孔内；
该发光二极管晶粒放置于基座上，且发光二极管晶粒可利用导线与基板所设置的接点呈电性连接。
2.如权利要求1所述的结构改良的发光二极管，其特征在于，该基板为印刷电路板。
3.如权利要求1所述的结构改良的发光二极管，其特征在于，该透孔一侧较宽而另侧渐渐缩口变窄。
4.如权利要求1所述的结构改良的发光二极管，其特征在于，该透孔为圆柱形，且圆柱形顶端逐渐向外扩大。
5.如权利要求1所述的结构改良的发光二极管，其特征在于，该基座设置有与基板的底部相抵持的抵持部。
6.如权利要求1所述的结构改良的发光二极管，其特征在于，该基座为金属所制成。
7.如权利要求1所述的结构改良的发光二极管，其特征在于，该透孔涂设有具反射功能的金属层。
8.如权利要求7所述的结构改良的发光二极管，其特征在于，该金属层为银或锡。
CNU2005201430874U 2005-12-21 2005-12-21 结构改良的发光二极管 Expired - Fee Related CN2884534Y (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107654912A (zh) * 2011-11-01 2018-02-02 日亚化学工业株式会社 发光装置及照明器具

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107654912A (zh) * 2011-11-01 2018-02-02 日亚化学工业株式会社 发光装置及照明器具
CN107654912B (zh) * 2011-11-01 2020-03-17 日亚化学工业株式会社 发光装置及照明器具

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