CN2850072Y - Microchip type multiple frequency laser - Google Patents
Microchip type multiple frequency laser Download PDFInfo
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- CN2850072Y CN2850072Y CN 200520072582 CN200520072582U CN2850072Y CN 2850072 Y CN2850072 Y CN 2850072Y CN 200520072582 CN200520072582 CN 200520072582 CN 200520072582 U CN200520072582 U CN 200520072582U CN 2850072 Y CN2850072 Y CN 2850072Y
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Abstract
The utility model discloses a microchip type multiple frequency laser which comprises a laser gain medium, a work-off crystal and a frequency multiplication crystal, wherein the frequency multiplication crystal adopts the type I crystal. The light incidence surface of the laser gain medium is coated with a front cavity membrane layer. The reflection surface of the frequency multiplication crystal is coated with a laser cavity reflecting membrane layer. The structure can avoid the interference effect effectively to stabilize the output of luminous power. The frequency multiplication crystal of the utility model can also adopt the type II crystal, and a wave plate is inserted between the work-off crystal and the frequency multiplication crystal. In this way, frequency multiplication light can be completely transformed into e-light when reaches the work-off crystal, and can be output from the work-off crystal so as to stabilize the output of the luminous power.
Description
Technical field
The utility model relates to laser, relates in particular to a kind of microchip frequency double laser that adopts gain medium and frequency-doubling crystal to constitute.
Background technology
In the microchip frequency double laser of routine, as shown in Figure 1, the light that LD light source 108 sends, after collimation and condenser lens 109,110 collimation focusing, enter gain medium 101, penetrate through frequency-doubling crystal 104, that the front end face of gain medium 101 is provided with is anti-reflection to pump light, to fundamental wave and the high anti-ante-chamber rete 106 of frequency doubled light again, the rear end face of frequency-doubling crystal 104 be provided with to fundamental wave high anti-, to the anti-reflection back cavity rete 111 of frequency doubled light.Gain medium 101, frequency-doubling crystal 104, ante-chamber rete 106, back cavity rete 111 constitute the microchip frequency double laser.In the laser of this structure, the forward direction frequency doubled light is directly from 111 transmissions of back cavity rete, gain medium 101, ante-chamber rete 106 are passed through to frequency doubled light in the back, return laser light gain media 101 arrives the interface of gain medium 101 and frequency-doubling crystal 104 again, enter frequency-doubling crystal 104, when fundamental wave and humorous glistening light of waves phasic difference were non-vanishing, the forward direction harmonic wave disappeared to the frequency doubled light part mutually with the back, i.e. δ
λ-δ
λ/2=δ
λ (rete)-δ
λ/2 (rete)+ 2 (δ
λ (crystal)-δ
λ/2 (crystal)) ≠ 0 can make Output optical power change by mobile pumping point and adjusting microplate temperature usually.
A kind of common phenomena is in said structure: the frequency doubled light of output can produce strong variation with different temperature along with different pumping points, make the power of microchip frequency double laser output be in unmanageable labile state, limited its scope of application so largely.
Summary of the invention
The utility model purpose provides the stable microchip frequency double laser of a kind of power output.
The utility model is by the following technical programs: this microchip frequency double laser comprises gain medium and frequency-doubling crystal, the light entrance face of gain medium is coated with the ante-chamber rete, this frequency-doubling crystal is a Type I crystalloid, the reflecting surface of frequency-doubling crystal is coated with the laser cavity reflective coating, work-off crystal (can be translated into " walking from crystal ", be the adopted name of U.S.'s laser field) is between gain medium and frequency-doubling crystal.
Because frequency-doubling crystal is a Type I crystalloid, frequency doubled light is vertical mutually with the polarization direction of fundamental wave, and directly export from the work-off crystal to frequency doubled light and the forward direction frequency doubled light that reflects from the laser cavity reflective coating back.In this structure since on frequency-doubling crystal directly to λ/2 light and λ (because that each laser adopted was only fixing, therefore for each laser, its λ is a determined value) light is coated with the laser cavity reflective coating, its fundamental wave and the phasic difference of frequency multiplication light value are approximately 0, thereby avoided interference effect, made Output optical power more steady.
Frequency-doubling crystal of the present utility model also can be the TYpeII crystalloid, inserts wave plate between work-off crystal and frequency-doubling crystal.
Because frequency-doubling crystal is the TypeII crystalloid, on optical direction, its frequency-doubling crystal optical axis projecting direction and work-off optical axis of crystal projecting direction angle at 45, so between work-off crystal and frequency-doubling crystal, insert wave plate, the wave plate optical axis direction is on work-off crystal and frequency-doubling crystal optical axis bisector, to guarantee that frequency doubled light all is converted into e light when arriving the work-off crystal, from the output of work-off crystal, thereby make Output optical power more steady.
At different light, wave plate of the present utility model is that the light of λ/2 can be 1/2 wave plate for wavelength, is that the light of λ can be full-wave plate for wavelength.
For a change export light direction, the utility model also can be above gain medium, work-off crystal left end is provided with quarter wave plate or the speculum that reflecting surface is coated with relative λ/2 of reflective coating.
Description of drawings
Now in conjunction with the accompanying drawings the utility model is further elaborated:
Fig. 1 is conventional microchip frequency double laser light path schematic diagram;
Fig. 2 is the light path schematic diagram of one of the utility model embodiment;
Fig. 3 is two the light path schematic diagram of the utility model embodiment;
Fig. 4 is three the light path schematic diagram of the utility model embodiment.
Embodiment
The utility model as shown in Figure 2, comprise gain medium 101, work-off crystal 102, frequency-doubling crystal 104, work-off crystal 102 is between gain medium 101 and frequency-doubling crystal 104, frequency-doubling crystal 104 adopts Type I crystalloid, the light entrance face of gain medium 101 is coated with ante-chamber rete 106, and the reflecting surface of frequency-doubling crystal 104 is coated with laser cavity reflective coating 105.The frequency doubled light of this structure is vertical mutually with the polarization direction of fundamental wave, and the back is to frequency doubled light and the forward direction frequency doubled light that reflects from laser cavity reflective coating 105, directly output from work-off crystal 102.
Another embodiment of the utility model as shown in Figure 3, this frequency-doubling crystal 104 adopts Type II crystalloid, insert wave plate 103 between work-off crystal 102 and frequency-doubling crystal 104, wave plate 103 is that the light of λ/2 is 1/2 wave plate for wavelength, is that the light of λ is full-wave plate for wavelength.
The utility model also can be as shown in Figure 4, above gain medium 101, work-off crystal 102 left ends are provided with quarter wave plate 107 or the speculum that reflecting surface is coated with relative λ/2 of reflective coating.。
Claims (4)
1, a kind of microchip frequency double laser, comprise gain medium and frequency-doubling crystal, the light entrance face of gain medium is coated with the ante-chamber rete, it is characterized in that: this frequency-doubling crystal is a Type I crystalloid, the reflecting surface of frequency-doubling crystal is coated with the laser cavity reflective coating, and the work-off crystal is between gain medium and frequency-doubling crystal.
2, a kind of microchip frequency double laser as claimed in claim 1, it is characterized in that: this frequency-doubling crystal is the TypeII crystalloid, inserts wave plate between work-off crystal and frequency-doubling crystal.
3, a kind of microchip frequency double laser according to claim 2 is characterized in that: this wave plate is that the light of λ/2 is 1/2 wave plate for wavelength, is that the light of λ is full-wave plate for wavelength.
4, according to claim 1,2 or 3 described a kind of microchip frequency double lasers, it is characterized in that: above gain medium, work-off crystal left end is provided with quarter wave plate or the speculum that reflecting surface is coated with relative λ/2 of reflective coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520072582 CN2850072Y (en) | 2005-06-08 | 2005-06-08 | Microchip type multiple frequency laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520072582 CN2850072Y (en) | 2005-06-08 | 2005-06-08 | Microchip type multiple frequency laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2850072Y true CN2850072Y (en) | 2006-12-20 |
Family
ID=37522542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520072582 Expired - Fee Related CN2850072Y (en) | 2005-06-08 | 2005-06-08 | Microchip type multiple frequency laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2850072Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101320883B (en) * | 2008-07-21 | 2011-06-29 | 福州高意通讯有限公司 | Single longitudinal mode laser |
| CN107623247A (en) * | 2017-10-11 | 2018-01-23 | 福建科彤光电技术有限公司 | A kind of fiber laser frequency multiplier |
| CN108775966A (en) * | 2018-09-05 | 2018-11-09 | 中国工程物理研究院激光聚变研究中心 | A kind of double delay third-order relevant instruments |
-
2005
- 2005-06-08 CN CN 200520072582 patent/CN2850072Y/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101320883B (en) * | 2008-07-21 | 2011-06-29 | 福州高意通讯有限公司 | Single longitudinal mode laser |
| CN107623247A (en) * | 2017-10-11 | 2018-01-23 | 福建科彤光电技术有限公司 | A kind of fiber laser frequency multiplier |
| CN107623247B (en) * | 2017-10-11 | 2023-12-26 | 福建科彤光电技术有限公司 | Fiber laser frequency multiplier |
| CN108775966A (en) * | 2018-09-05 | 2018-11-09 | 中国工程物理研究院激光聚变研究中心 | A kind of double delay third-order relevant instruments |
| CN108775966B (en) * | 2018-09-05 | 2023-06-09 | 中国工程物理研究院激光聚变研究中心 | Double-delay third-order correlator |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061220 |