CN2836340Y

CN2836340Y - IGBT module drive circuit

Info

Publication number: CN2836340Y
Application number: CN 200520093324
Authority: CN
Inventors: 张继科
Original assignee: Individual
Current assignee: Individual
Priority date: 2005-11-02
Filing date: 2005-11-02
Publication date: 2006-11-08
Anticipated expiration: 2015-11-02

Abstract

The existing IGBT module drive circuit has the technical defects of complicated circuit construction, more leading wires of module I/O and power supply interfaces, difficulty of disconnected operation because of a simulation power amplification circuit, etc. The utility model provides a technical scheme for the IGBT module drive circuit for solving the technical defects of the existing IGBT module drive circuit. The utility model adopts an IGBT drive circuit of a power amplifier with a collector pushed and pulled in a complementary way, and the circuit structure of the utility model is simplified. The utility model has the characteristics of small voltage fluctuation of input stages, fast switching response, low driving power, easy realization of electromagnetic isolation of a power supply, etc. The high performance of the operation of an IGBT module can be exerted sufficiently because the rationality of the design of the drive circuit is presented sufficiently.

Description

IGBT module drive circuit

Technical field

The utility model relates to the improvement technology of insulated gate bipolar transistor IGBT drive circuit.

Background technology

Most of insulated gate bipolar transistor IGBT manufacturers are in order to solve the IGBT integrity problem, all produce the mixing integrated drive electronics that matches with its IGBT product, as the special-purpose integrated driver module of HR065IGBT of the special-purpose driver module of the quick type IGBT of the EXB841 type 300A/1200V of Japanese fuji company, Japanese Ying Da company, and Siemens's driver module etc.What these IGBT drive circuits existed than the common technique problem is: because IGBT often works in high voltage, big electric current, the high-frequency abominable operational environment, therefore to bear the power circuit that adopts special supporting design, and implement strict isolation design with control circuit on every side, caused its product design size bigger, power supply energy consumption is big in the work, its required drive current generally reaches the 3-4 ampere, and module I/O interface line and power interface lead-in wire is more; Next is owing to the application simulation power amplification circuit, i.e. its driving stage design is applied to the amplification region, and this is very disadvantageous for the such voltage-type switching device of IGBT; In addition, the output stage of drive circuit is the complementary symmetrical power amplifier drive circuit of Class B, and voltage amplification factor is near 1 and permanently then cause output potential and positive-negative power potential error bigger less than 1, also is unfavorable for the work of normally cut-offfing of IGBT.For this reason, design a kind of insulated gate bipolar transistor IGBT drive circuit simple in structure, that driveability is superior to prior art and just become a key technology problem giving full play to the insulated gate bipolar transistor IGBT superior function.

The utility model content

Goal of the invention of the present utility model be to provide a kind of simple in structure, have an IGBT module drive circuit that is superior to existing insulated gate bipolar transistor IGBT drive circuit driveability.IGBT module drive circuit engineering scheme of the present utility model, its major technique content is: a kind of IGBT module drive circuit, its output stage is by PNP, NPN type two switch triodes connect and compose supply IGBT and cut-off the collector electrode complementary push-pull power driving circuit of drive signal, the two emitter-base bandgap grading inputs that drive triode connect the forward bias and the negative bias power supply of the power circuit output of this drive circuit respectively, its base stage connect respectively one be provided with behind the voltage-stabiliser tube of switch region separately in parallel, as the input that is connected with its input stage, two pipe collectors are connected in parallel to the IGBT grid respectively behind current-limiting resistance; Its input stage is to be made of the drive circuit that cut-offs the input instruction control signal, and its output is connected to the parallel connection point place of output stage.

The insulated gate bipolar transistor IGBT design of drive circuit that the utility model design provides, its circuit devcie is formed few, has the fast characteristics of switching response, thereby can improve the operating frequency of IGBT device effectively.The collector electrode complementary push-pull power amplifier of present technique power case is the drive circuit of main body, fall and only be 0.2-0.3V because it recommends the full combined pressure of pipe collector, so its load voltage approaches IGBT positive-negative power voltage, help ensureing the reliably working of voltage-type driving switch device IGBT; Secondly, recommend power tube and work in switch region but not the amplification region, its drive circuit input stage voltage fluctuation is little, thereby switching response is fast, and driving power is little, and energy consumption is little, realizes the power supply electromagnetic isolation easily; Once more, it recommends the voltage-stabiliser tube of power tube setting that base stage is connected in series, and can realize that back level high level difference output drives by the little level amplitude difference of input stage, thereby demonstrate fully the reasonability of its design of drive circuit.If configuration realizes the DC/DC conversion electric power circuit of its electromagnetic isolation, its circuit structure is just more simplified, and the control pin also has only 7-8, and its volume also dwindles greatly, and its product size is not more than 75 * 35 * 27mm ³, if bear in the IGBT module, the control number of pins can be reduced to 4-5.

Description of drawings

Fig. 1 is the circuit theory diagrams of this IGBT module drive circuit

Fig. 2 is the circuit theory diagrams of the monitoring and protecting circuit of IGBT module work overcurrent

Fig. 3 is the circuit theory diagrams of the DC/DC conversion electric power circuit of IGBT drive circuit

Embodiment

Insulated gate bipolar transistor IGBT module drive circuit of the present utility model setting is connected in grid (or claiming gate pole) the G end of IGBT, the output stage of this drive circuit is by positive-negative-positive and NPN type two switch power triode Q2, the collector electrode complementary push-pull power driving circuit that Q3 forms constitutes, two switch push-pull pipe Q2, the emitter-base bandgap grading end of Q3 is opened for constituting insulated gate bipolar transistor IGBT, positive back bias voltage+the 15V of DC driven that turn-offs, the power connector end of-7V, positive-negative-positive is wherein recommended the forward bias+15V power supply that IGBT opens that provides of pipe Q2 emitter-base bandgap grading connection, and the NPN type is recommended pipe Q3 emitter-base bandgap grading and provided negative bias-7V power supply that IGBT turn-offs; The base terminal of two switch push-pull pipe Q2, Q3 forward is respectively connected behind a voltage-stabiliser tube DW3, DW4 and current-limiting resistance R12, the R13 and is connect, as the input that is connected with input stage, two switch push-pull pipe Q2, Q3 are provided with the switch service area of switch push-pull pipe Q2, Q3 by the setting of voltage stabilizing parameter of the voltage-stabiliser tube of series connection separately.The input stage of this drive circuit is to cut-off the amplification driving circuit of control command signal, and it is by emitter follower Q1 and drives the drive circuit that NAND gate constitutes that its output is connected with complementary push-pull circuit point in parallel; In the present embodiment, for realizing monitoring and protecting to the load circuit overcurrent fault of IGBT conducting state, the driving NAND gate of the input stage of its drive circuit is a pair of NAND gate U1AA, one " with 2 " signal derives from the output signal of its input stage emitter follower Q1, and its another " with 1 " signal derives from monitoring and protecting circuit output signal A as shown in Figure 2; Connect with resistance R 16, R17 through capacitor C 7 and to have constituted the voltage sampling circuit of this monitoring and protecting circuit; be of coupled connections to the input formation false voltage start-up circuit of switching tube Q4 through voltage-stabiliser tube DW5; switching tube Q4 output is through two NAND gate U1BA and two NAND gate U1CA; output is connected to " with 1 " end of two NAND gate U1AA of IGBT drive circuit through diode D3, constitute this monitoring and protecting circuit jointly.The power end of its voltage sampling circuit is taken from the output C of forward bias switch push-pull pipe, and the node between two resistance R 16, the R17 is held with the sampling sampling through fast diode D2---and the drain D of IGBT module connects, V during with detection IGBT conducting _DSHeight judge whether to be short-circuited.During IGBT module operate as normal; can't form the starting resistor of starting switch pipe Q4 on the capacitor C 7; when overcurrent fault takes place in IGBT; the IGBT drain D---the conducting voltage between the source S exceeds normal value; just form the disruptive potential of voltage-stabiliser tube DW5 and conducting in capacitor C 7 charging; the input step-down of two NAND gate U1BA; its output is drawn high; force NAND gate U1CA output low level; drag down the incoming level of two NAND gate U1AA through diode D3; thereby the output high level blocks the signal of opening of IGBT; the output signal end of its pair NAND gate U1CA is coupled to one and the input of two NAND gate U1BA through resistance R 22 feedbacks; drag down the input of two NAND gate U1BA, thereby realize monitoring protective circuit action self-locking.For making this monitoring and protecting circuit can export IGBT fault-signal ERR synchronously, the output of NAND gate U1BA is through photoelectricity isolation coupling pipe U2 output fault-signal ERR simultaneously.

For working in high voltage, big electric current, IGBT module in the high-frequency operational environment, for fear of the interference effect of its work for peripheral circuits, just tackle its drive circuit works power unit and adopt strict electromagnetic isolation measure, the direct current DC/ direct current DC change-over circuit of implementing electromagnetic isolation is adopted in the power circuit design that is its drive circuit, in the present embodiment, its electromagnetic isolation DC/DC conversion circuit is to be made of pulse-width modulation switching power supply circuit and electromagnetic coupled regulator rectifier circuit, as shown in Figure 3, form switching power circuit with pulse-width modulation driver module U2 and peripheral cell, through transformer BD, by its secondary output two-way regulator rectifier circuit, be respectively IGBT module output forward bias voltage+15V, negative sense bias voltage-7V.

Be directed to the inductive load of IGBT module, for avoiding its inductive load BD2 that IGBT is turn-offed superpotential influence, it is connected anti-parallel to IGBT output and is provided with fast recovery diode D4, the transformer inductance load discharge energy absorption circuit that is provided with capacitor C 9 and resistance R 26 compositions also in parallel is parallel to resistance R 26 two ends and is provided with unidirectional conducting diode D5.Discharge resistance R26 work superheat state when solving this absorption circuit working, its dotted line extension is for replacing the circuit structure of discharge resistance R26 in Fig. 1, be provided with the feed circuit that boosts that constitutes by step-up transformer BD3 in this circuit structure, its transformer secondary output boost terminal is fed to power end VCC through diode D7, and the series connection of primary end is provided with unidirected discharge diode D6 and current-limiting resistance R27.

Claims

1, a kind of IGBT module drive circuit, it is characterized in that its output stage is to connect and compose supply IGBT by PNP, NPN type two switch triodes (Q2, Q3) to cut-off the collector electrode complementary push-pull power driving circuit of drive signal, the two emitter-base bandgap grading inputs that drive triode connect the forward bias and the negative bias power supply of the power circuit output of this drive circuit respectively, its base stage connect respectively one be provided with the back of the voltage-stabiliser tube of switch region (DW3, DW4) separately in parallel, as the input that is connected with its input stage, two pipe collectors are connected in parallel to the IGBT grid respectively behind current-limiting resistance; Its input stage is to be made of the drive circuit that cut-offs the input instruction control signal, and its output is connected to the parallel connection point place of output stage.

2, IGBT module drive circuit according to claim 1 is characterized in that its input driving stage circuit is to be made of emitter follower (Q1) and NAND gate.

3, IGBT module drive circuit according to claim 2, the NAND gate that it is characterized in that its input driving stage circuit is a pair of NAND gate (U1AA), the one coincidence AND signal derives from the output signal of emitter follower (Q1), and its another coincidence AND signal derives from monitoring and protecting circuit output signal (A); Connect with resistance (R16, R17) through electric capacity (C7) and to constitute the voltage sampling circuit of monitoring and protecting circuit, be of coupled connections to the input formation false voltage start-up circuit of switching tube (Q4) through voltage-stabiliser tube (DW5), switching tube (Q4) output is through two NAND gate (U1BA) and two NAND gate (U1CA), be connected to through diode (D3) output the IGBT drive circuit two NAND gate (U1AA) one " with " input A, constitute this monitoring and protecting circuit jointly; The power end of its voltage sampling circuit is taken from the output (C) of forward bias switch push-pull pipe (Q2), and the node between two resistance (R16, R17) is held with the sampling sampling through fast diode (D2)---and the drain D of IGBT module connects.

4, IGBT module drive circuit according to claim 1 is characterized in that its power circuit for realizing the direct current DC/ direct current DC change-over circuit of electromagnetic isolation, and this power circuit is to be made of pulse-width modulation switching power supply circuit and electromagnetic coupled regulator rectifier circuit.

5, IGBT module drive circuit according to claim 4, it is characterized in that direct current DC/ direct current DC change-over circuit is to form switching power circuit with pulse-width modulation driver module (U2) and peripheral cell, through transformer (BD1), by its secondary output two-way regulator rectifier circuit, be respectively IGBT module output forward bias voltage and negative sense bias voltage.

6, IGBT module drive circuit according to claim 1, it is characterized in that being connected anti-parallel to IGBT output and be provided with fast recovery diode (D4), also parallel connection is provided with the inductive load discharge energy that electric capacity (C9) and step-up transformer (BD3) primary coil be in series and absorbs circuit, be parallel to step-up transformer (BD3) primary coil two ends and be provided with unidirectional conducting diode (D5), its transformer secondary output boost terminal is fed to power end (VCC) through diode (D7), and the series connection of primary end is provided with unidirected discharge diode (D6) and current-limiting resistance (R27).