CN2815273Y - High density electrode array structure - Google Patents
High density electrode array structure Download PDFInfo
- Publication number
- CN2815273Y CN2815273Y CN 200520023080 CN200520023080U CN2815273Y CN 2815273 Y CN2815273 Y CN 2815273Y CN 200520023080 CN200520023080 CN 200520023080 CN 200520023080 U CN200520023080 U CN 200520023080U CN 2815273 Y CN2815273 Y CN 2815273Y
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- array
- electrode
- electrode array
- wire
- single electrode
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- 239000011347 resin Substances 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 241000218202 Coptis Species 0.000 claims description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 210000003298 dental enamel Anatomy 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 4
- 238000003491 array Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 210000005013 brain tissue Anatomy 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 210000005036 nerve Anatomy 0.000 description 1
- 210000002569 neuron Anatomy 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 208000037816 tissue injury Diseases 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- Electrotherapy Devices (AREA)
- Apparatus Associated With Microorganisms And Enzymes (AREA)
Abstract
The utility model relates to the technical field of a high density electrode array technology, particularly a high density electrode array structure. A high density electrode array is composed of a micropore array, a single electrode, fixing resin and an interface board, wherein the single electrode is arranged in a vertical hole of the micropore array and a leading wire is welded on the tail part of the single electrode. The head part of the single electrode is in a pointed shape and extends out of the vertical hole of the micropore array. The fixing resin is arranged above the tail part of the single electrode and the upper surface of the micropore array, and the end of the leading wire is welded on the interface board.
Description
Technical field
The present invention relates to the high-density electrode array technical field, particularly a kind of high-density electrode array structure.
Background technology
Electrod-array is to form array at the integrated a plurality of microelectrodes of substrate, implants the multiple electrode array of cortex, can read the active detailed information of neuron colony in the brain.Aspect the neuroscience basic research, multiple electrode array begins to become a kind of important nerve information detection means, and aspect medical application, multiple electrode array becomes the interface of neuroscience towards medical application.
1981, people such as U.S. scientist Kruger became multiple electrode array with the fixing a plurality of microelectrodes of ceramic material on the grid of 250 microns of spacings, and this method efficient is low, and the electrode length and the depth of parallelism are wayward.Multiple improvement multiple electrode array manufacture method has appearred later on, electrod-array as You Ta university is directly to carve a plurality of electrode tip with saw blade on silicon chip, make finished product through technologies such as insulation, bonding wires again, this class methods problem is that the size of electrode tip can not do too carefully, and too thick electrode pair brain tissue injury is bigger, also is difficult to make the high multiple electrode array of density simultaneously.Adopt planar integrated circuit manufacturing process such as photoengraving, ion sputtering to make flaky multi-electrode in addition in addition, be built up multiple electrode array again, as the electrod-array of Univ Michigan-Ann Arbor USA, but this class electrod-array still need improve yet not commercialization at present aspect combination property.
Summary of the invention
The objective of the invention is to provide a kind of high-density electrode array structure.Provide a kind of electrode diameter very thin, be easy to realize highdensity multiple electrode array structure.
For achieving the above object, solution of the present invention provides a kind of high-density electrode array structure, is made up of microwell array, single electrode, lead-in wire, fixing resin and interface, and its single electrode is a square, places the upright opening of microwell array; Unipolar afterbody is than head length, horizontal-extending, and unipolar head is pointed, stretches out the upright opening of microwell array; Above the upper surface of unipolar part of horizontal afterbody and microwell array, fixing resin is arranged.
The present invention is the single electrode that superfine wire electrode is made, and lead-in wire is inserted in the microwell array then on the electrode afterbody welds in advance, forms multiple electrode array.It is leaded that this method is assembled out the electrod-array back side, saved the higher technology at array back side solder taul of difficulty.A kind of high-density electrode array is made up of microwell array, single electrode, lead-in wire, fixing resin and interface board, it is characterized in that, single electrode is a square, places the upright opening of microwell array; Unipolar afterbody is welded with lead-in wire, and unipolar head is pointed, stretches out the upright opening of microwell array; Above the upper surface of unipolar afterbody and microwell array, fixing resin is arranged; Lead terminal is welded on the interface board.
Described lead-in wire is enamel covered wire or the enamel-cover silver line or the enamel-cover gold thread of 0.01 millimeter ~ 0.03 mm dia.
The present invention uses the single electrode that is welded with lead-in wire in advance, can assemble out a lot of arrays of electrodeplate, and electrode spacing also can be very little, is easy to produce high-density electrode array.
Description of drawings
Fig. 1 is the single electrode sketch map of high-density electrode array of the present invention.
Fig. 2 is the microwell array sketch map of high-density electrode array of the present invention.
Fig. 3 is the microwell array scheme of installation of high-density electrode array of the present invention.
The specific embodiment
See Fig. 1, be equipped with 150 microns in about 25 microns in aperture, 1 millimeter of hole depth, pitch of holes, 15 * 15 microwell array 2.Be equipped with diameter and be 20 microns totally 225 of single electrodes 1, locate to go between 3 in the welding at 2.5 millimeters at electrode 1 end, operation is gone into micropore array 2 holes with single electrode 1, after all electrode 1 is gone into, drip resin 42 of microwell arrays, fixed electrode 1 and lead solder-joint, 3 ends that go between are soldered to interface board 5.
Fig. 2, the microwell array structure of high-density electrode array has a plurality of holes in microwell array 2, in order to the insertion of electrode 1.
Fig. 3, the mounting structure sketch map in the microwell array 2 of high-density electrode array behind the insertion electrode 1.
Claims (2)
1, a kind of high-density electrode array structure is made up of microwell array, single electrode, lead-in wire, fixing resin and interface board, it is characterized in that, single electrode is a square, places the upright opening of microwell array; Unipolar afterbody is welded with lead-in wire, and unipolar head is pointed, stretches out the upright opening of microwell array; Above the upper surface of unipolar afterbody and microwell array, fixing resin is arranged; Lead terminal is welded on the interface board.
2, high-density electrode array structure according to claim 1 is characterized in that, described lead-in wire is enamel covered wire or the enamel-cover silver line or the enamel-cover gold thread of 0.01 millimeter ~ 0.03 mm dia.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520023080 CN2815273Y (en) | 2005-07-07 | 2005-07-07 | High density electrode array structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520023080 CN2815273Y (en) | 2005-07-07 | 2005-07-07 | High density electrode array structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2815273Y true CN2815273Y (en) | 2006-09-13 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520023080 Expired - Fee Related CN2815273Y (en) | 2005-07-07 | 2005-07-07 | High density electrode array structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2815273Y (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103330562A (en) * | 2013-07-11 | 2013-10-02 | 无锡交大联云科技有限公司 | Bionic flexible dry electrode and manufacturing method thereof |
| CN103519808A (en) * | 2013-09-18 | 2014-01-22 | 电子科技大学 | Multi-channel microelectrode array and manufacturing method thereof |
| CN104367319A (en) * | 2014-11-05 | 2015-02-25 | 中国科学院深圳先进技术研究院 | Electrode device for chronic recording |
| CN104367314A (en) * | 2014-11-05 | 2015-02-25 | 中国科学院深圳先进技术研究院 | Electrode device for acute recording |
| CN107684416A (en) * | 2016-08-04 | 2018-02-13 | 云南科威液态金属谷研发有限公司 | Glass-micropipe electrode based on liquid metal and preparation method thereof |
-
2005
- 2005-07-07 CN CN 200520023080 patent/CN2815273Y/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103330562A (en) * | 2013-07-11 | 2013-10-02 | 无锡交大联云科技有限公司 | Bionic flexible dry electrode and manufacturing method thereof |
| CN103330562B (en) * | 2013-07-11 | 2015-01-28 | 无锡交大联云科技有限公司 | Bionic flexible dry electrode and manufacturing method thereof |
| CN103519808A (en) * | 2013-09-18 | 2014-01-22 | 电子科技大学 | Multi-channel microelectrode array and manufacturing method thereof |
| CN104367319A (en) * | 2014-11-05 | 2015-02-25 | 中国科学院深圳先进技术研究院 | Electrode device for chronic recording |
| CN104367314A (en) * | 2014-11-05 | 2015-02-25 | 中国科学院深圳先进技术研究院 | Electrode device for acute recording |
| CN107684416A (en) * | 2016-08-04 | 2018-02-13 | 云南科威液态金属谷研发有限公司 | Glass-micropipe electrode based on liquid metal and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060913 Termination date: 20110707 |