CN2793917Y

CN2793917Y - Probe structure of crystal circular probe card

Info

Publication number: CN2793917Y
Application number: CN 200520002197
Authority: CN
Inventors: 吴政勋; 董玟昌; 陈达群; 王崇宇
Original assignee: RIGIDTECH MICROELECTRONICS CORP
Current assignee: RIGIDTECH MICROELECTRONICS CORP
Priority date: 2005-02-07
Filing date: 2005-02-07
Publication date: 2006-07-05
Anticipated expiration: 2015-02-07

Abstract

The utility model relates to a probe structure of a crystal circular probe card; a probe protective layer coated with micro electromechanical rigid probes is arranged at the upper surface of a probe base board of the crystal circular probe card to form a structure that the needle tip part of the micro electromechanical rigid probe is only exposed and other parts are coated by the probe protective layer. If crystal particles of the crystal circular are matted with impure particles during the process of crystal circular testing, the utility model can prevent the impure particles from crushing into gaps between the micro electromechanical rigid probes; thus, the probe structure has effects of isolating the impure particles and preventing the micro electromechanical rigid probes from being damaged or broken.

Description

The measuring probe structure of wafer probe cards

Technical field

The utility model relates to a kind of measuring probe structure of wafer probe cards, is meant especially to get into the slit between the micro electronmechanical rigid probe and to prevent the measuring probe structure that micro electronmechanical rigid probe ruptures by anti-blocking unclean particulate.

Background technology

On the manufacturing process of semiconductor industry, mainly can be divided into IC design, silicon wafer process, wafer sort and wafer encapsulation four big steps.

Wherein so-called wafer sort step is carried out electric characteristics to every on wafer crystal grain exactly and is detected, with the defective crystal grain on detection and the superseded wafer.When carrying out wafer sort, be to utilize the probe of wafer probe cards to thrust the contact pad (pad) on the crystal grain and constitute electrically contact, to be sent to automatic test equipment (ATE) via the measured test signal of probe again and do analysis and judge, therefore can obtain the electric characteristics test result of every crystal grain on the wafer.

And above-mentioned employed wafer probe cards according to employed probe structure, roughly can be divided into 40 two kinds of cantalever type probe card shown in Figure 1 10 and rigidity formula probe shown in Figure 4.

As shown in Figure 1, when using cantalever type probe card 10 to carry out wafer sort, be to utilize to have flexible cantalever type probe 12 and constitute the electrical electrical characteristic of testing every crystal grain 20 that contacts with contact pad 21 on the crystal grain 20, but, when the spacing of cantalever type probe 12 during less than 50 microns, this cantalever type probe card 10 has following two shortcomings in the process of wafer sort:

One, cantalever type probe 12 is because with manual dress pin, so can't accurately control the precision of cantalever type probe 12 in the process of dress pin.When carrying out wafer sort, as shown in Figure 2, the needle point of this cantalever type probe 12 is because easily because of the extruding deviation post, and the result causes cantalever type probe card 10 that the phenomenon of electrical characteristics test short circuit often takes place.

They are two years old, as shown in Figure 3, in the process of carrying out wafer sort, especially running into crystal grain 20 has when staiing a small amount of unclean particulate 30, this cantalever type probe 12 is easy to be subjected to the influence of unclean particulate 30 and causes probe distortion, distortion even displacement, serious words even cause cantalever type probe card 10 to damage.So, this cantalever type probe card 10 when carrying out the wafer sort of fine pitch, its cantalever type probe 12 bad pins and to repair the frequency of pin quite high.

As for rigidity formula probe 40 shown in Figure 4, because adopt with the manufacture of semiconductor technology micro electronmechanical rigid probe 42 that on the detecting head substrate 41 that constitutes by the single or multiple lift ceramic substrate, is shaped, so, make that the tip position precision of micro electronmechanical rigid probe 42 of this rigidity formula probe 40 is quite high.As shown in Figure 5, when carrying out the wafer sort of fine pitch, the micro electronmechanical rigid probe 42 of this rigidity formula probe 40 can penetrate into the contact pad 21 of crystal grain 20 really, and therefore this rigidity formula probe 40 can obtain preferable and more stable testing electrical property result.

But this rigidity formula probe 40 is in the process of carrying out wafer sort, and especially running into crystal grain 20 has when staiing a small amount of unclean particulate 30, still has following shortcoming:

One, as shown in Figure 6, if when the rigidity of the unclean particulate 30 that is run into is more weak than micro electronmechanical rigid probe 42, unclean particulate 30 can distortion and is filled in the slit between the micro electronmechanical rigid probe 42, and this situation can cause the electric characteristics test generation anomaly that causes rigidity formula probe 40 because unclean particulate 30 can't remove.

They are two years old, if the rigidity of the unclean particulate 30 that is run into is during than micro electronmechanical rigid probe the last 42, unclean particulate 30 can be compelled to push in the slit between the micro electronmechanical rigid probe 42 that enters rigidity formula probe 40 and be expressed to and cause micro electronmechanical rigid probe 42 fractures.

Therefore, this rigidity formula probe 40 needs improved part, is exactly how to avoid unclean particulate 30 on the crystal grain 20 can extruding to enter in the slit between the micro electronmechanical rigid probe 42 and cause micro electronmechanical rigid probe 42 to damage and rupture.

The utility model content

Main purpose of the present utility model provides a kind of measuring probe structure of wafer probe cards; has the effect that anti-blocking unclean particulate is got into the slit between the micro electronmechanical rigid probe and prevented micro electronmechanical rigid probe fracture; it closes the chain technology is to be provided with one deck probe protection layer on the detecting head substrate of wafer probe cards; make micro electronmechanical rigid probe on the detecting head substrate constitute only to expose the structure that tip portion and other parts are all coated by the probe protection layer, this structure in the unclean particulate on can anti-blocking crystal grain enters into slit between the micro electronmechanical rigid probe and the micro electronmechanical rigid probe of protection avoid being damaged or rupturing.

Secondary objective of the present utility model provides a kind of measuring probe structure of wafer probe cards; micro electronmechanical rigid probe on the detecting head substrate constituted only expose the structure that tip portion and other parts are all coated by the probe protection layer; in the process of carrying out wafer sort, have in the unclean particulate of contamination if run into crystal grain; this probe protection layer can be brought into play the anti-blocking function outside of unclean particulate; except impelling unclean particulate is removed quite easily, and can protect micro electronmechanical rigid probe to avoid being damaged or rupturing.

The utility model provides a kind of measuring probe structure of wafer probe cards; comprise a detecting head substrate and some this micro electronmechanical rigid probe above detecting head substrate that is arranged on; it is characterized in that: the plate face of this detecting head substrate is provided with a probe protection layer that coats micro electronmechanical rigid probe, the structure that micro electronmechanical rigid probe is constituted only expose tip portion and other parts all to be coated by this probe protection layer.

The measuring probe structure of wafer probe cards of the present utility model is characterized in that: this probe protection layer is the probe protection layer that possesses the low-k characteristic.This detecting head substrate can be single-layer ceramic substrate or multilayer ceramic substrate.

In the process of carrying out wafer sort, have in the unclean particulate of contamination if run into the crystal grain of wafer, can anti-blocking unclean particulate get in the slit between the micro electronmechanical rigid probe, so this measuring probe structure has the unclean particulate of isolation and prevents the effect that micro electronmechanical rigid probe is damaged or ruptures.

Description of drawings

Fig. 1 is the structural representation of existing cantalever type probe card;

Fig. 2 is that cantalever type probe shown in Figure 1 is stuck in when carrying out wafer sort cantalever type probe causes taking place the electrical characteristics test short circuit because of deviation post schematic diagram takes place easily;

Fig. 3 is that cantalever type probe shown in Figure 1 is stuck in the process of carrying out wafer sort if run into the schematic diagram that detecting head damages takes place when the unclean particulate that stains in the environment is arranged on the crystal grain easily;

Fig. 4 is the structural representation of existing rigidity formula probe;

Fig. 5 is that rigidity formula probe shown in Figure 4 is stuck in the schematic diagram that its micro electronmechanical rigid probe when carrying out wafer sort can penetrate into the contact pad of crystal grain really.

Fig. 6 be rigidity formula probe shown in Figure 4 be stuck in the process of carrying out wafer sort if run into take place easily when the unclean particulate that stains in the environment is arranged on the crystal grain unclean particulate fill in micro electronmechanical rigid probe between the slit or cause micro electronmechanical rigid probe to damage the schematic diagram of fracture;

Fig. 7 is the measuring probe structure schematic diagram of the wafer probe cards shown in the utility model;

Fig. 8 is that wafer probe shown in Figure 7 is stuck in the schematic diagram that its micro electronmechanical rigid probe when carrying out wafer sort can penetrate into the contact pad of crystal grain really;

Fig. 9 is that wafer probe shown in Figure 7 is stuck in the process of carrying out wafer sort if run into when the unclean particulate that stains in the environment is arranged on the crystal grain and can brings into play the schematic diagram of isolating unclean particulate and the micro electronmechanical rigid probe of protection.

The simple declaration of assembly conventional letter

10, cantalever type probe card 12, cantalever type probe

20, crystal grain 21, contact pad

30, unclean particulate 40, rigidity formula probe

41, detecting head substrate 42, micro electronmechanical rigid probe

50, wafer probe cards 53, probe protection layer

Embodiment

As shown in Figure 7, wafer probe cards 50 shown in the utility model is a kind of rigidity formula probe of using micro electronmechanical rigid probe, has the detecting head substrate 41 that constitutes by the single or multiple lift ceramic substrate, and for manufacture of semiconductor is arranged on this some micro electronmechanical rigid probe 42 above detecting head substrate 41, and this detecting head substrate 41 is provided with wire line and every micro electronmechanical rigid probe 42 constitutes electric connection.

The plate face of this detecting head substrate 41 is provided with a probe protection layer 53; except that possessing the low-k characteristic, and the micro electronmechanical rigid probe above the detecting head substrate 41 42 are constituted only expose the structure that tip portion and other parts are all coated by this probe protection layer 53.This structure and can stop that the dirty particulate of environment apoplexy involving the solid organs enters the slit between the micro electronmechanical rigid probe 42 except can the bending strength of firm micro electronmechanical rigid probe 42.

Because the micro electronmechanical rigid probe 42 of the wafer probe cards 50 shown in the utility model is to be arranged on above the detecting head substrate 41 with manufacture of semiconductor; even after coating through probe protection layer 53, the precision that every micro electronmechanical rigid probe 42 comprises its tip position is still quite high.Therefore, as shown in Figure 8, when carrying out the wafer sort of fine pitch, the micro electronmechanical rigid probe 42 of the wafer probe cards 42 shown in the utility model can penetrate into the contact pad 21 of crystal grain 20 really, so can obtain preferable and more stable testing electrical property result.

As shown in Figure 9; in the process of carrying out wafer sort, have in a small amount of unclean particulate 30 of contamination if run into crystal grain 20; because the micro electronmechanical rigid probe 42 of the detecting head substrate 41 of wafer probe cards 50 of the present utility model is to be subjected to the protection of probe protection layer 53 and only to expose tip portion; therefore; also only can be even unclean particulate 30 is squeezed by the anti-outside that gets lodged in probe protection layer 53; can not be got into fully in the slit between the micro electronmechanical rigid probe 42; if be stained with glutinous situation; unclean particulate 30 also can only be attached to the needle surface place of micro electronmechanical rigid probe 42; be unlikely and cause micro electronmechanical rigid probe 42 to damage or fracture, and quite easily unclean particulate 30 is got rid of.

Therefore, the wafer probe cards shown in the utility model 50 has the effect that anti-blocking unclean particulate 30 is got into the slit between the micro electronmechanical rigid probe 42 and prevented micro electronmechanical rigid probe 42 fractures.

By above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from the utility model technological thought.

Therefore, technical scope of the present utility model is not limited to the content on the specification, must determine its technical scope according to interest field.

Claims

1, a kind of measuring probe structure of wafer probe cards; comprise a detecting head substrate and some this micro electronmechanical rigid probe above detecting head substrate that is arranged on; it is characterized in that: the plate face of this detecting head substrate is provided with a probe protection layer that coats micro electronmechanical rigid probe, constitutes to make micro electronmechanical rigid probe only expose tip portion and structure that other parts are all coated by this probe protection layer.

2, the measuring probe structure of wafer probe cards as claimed in claim 1 is characterized in that: this probe protection layer is the probe protection layer that possesses the low-k characteristic.

3, the measuring probe structure of wafer probe cards as claimed in claim 1 or 2 is characterized in that: this detecting head substrate is the single-layer ceramic substrate.

4, the measuring probe structure of wafer probe cards as claimed in claim 1 or 2 is characterized in that: this detecting head substrate is a multilayer ceramic substrate.