KR200403352Y1 - A probe needle for measuring the wafer chip quality - Google Patents

A probe needle for measuring the wafer chip quality Download PDF

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Publication number
KR200403352Y1
KR200403352Y1 KR20-2005-0022526U KR20050022526U KR200403352Y1 KR 200403352 Y1 KR200403352 Y1 KR 200403352Y1 KR 20050022526 U KR20050022526 U KR 20050022526U KR 200403352 Y1 KR200403352 Y1 KR 200403352Y1
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South Korea
Prior art keywords
probe
semiconductor
semiconductor inspection
electrode pad
inspection probe
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KR20-2005-0022526U
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Korean (ko)
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김철웅
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김철웅
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Priority to KR20-2005-0022526U priority Critical patent/KR200403352Y1/en
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Publication of KR200403352Y1 publication Critical patent/KR200403352Y1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06716—Elastic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06755—Material aspects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
    • G01R1/07371—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch using an intermediate card or back card with apertures through which the probes pass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

본 고안은 반도체 웨이퍼의 칩 특성측정에 사용되는 프로브 카드의 탐침에 관한 것으로, 보다 자세하게는 반도체 칩 상의 전극패드에 접촉되는 탐침의 내부 입자크기를 조립화(粗粒化)시킴으로써 탄성력과 내구성이 증대된 반도체 검사용 탐침에 관한 것이다.The present invention relates to a probe of a probe card used for measuring chip characteristics of a semiconductor wafer. More specifically, the elastic force and durability are increased by assembling the internal particle size of the probe contacting the electrode pad on the semiconductor chip. It relates to a semiconductor inspection probe.

이를 위하여 본 고안에서는 텅스텐 재질의 반도체 검사용 탐침을 담금질 및 템퍼링 열처리 공정과정을 다수 회 반복수행함으로써, 반도체 칩의 전극패드와 접촉하는 반도체 검사용 탐침의 입자크기를 종래 10㎛이하에서 80∼200㎛의 입자크기로 조립화(粗粒化)시키는 것을 특징으로 한다.To this end, in the present invention, by repeatedly performing a process of quenching and tempering a tungsten semiconductor inspection probe a plurality of times, the particle size of the semiconductor inspection probe in contact with the electrode pad of the semiconductor chip is less than 80 ~ 200 in the conventional 10㎛ It is characterized by granulation with a particle size of 탆.

이로써 반도체 검사용 탐침의 탄성력이 약 10% 이상 향상되고, 그에 따라 반도체 검사용 탐침이 반도체 칩의 전극패드와의 접촉시에 발생할 수 있는 실리콘층의 균열 등을 방지할 수 있게 됨은 물론 반도체 검사용 탐침의 내구성도 향상시킬 수 있는 효과가 있다.As a result, the elastic force of the semiconductor inspection probe is improved by about 10% or more, so that the semiconductor inspection probe can prevent cracking of the silicon layer or the like, which may occur when the semiconductor chip contacts the electrode pad. It also has the effect of improving the durability of the probe.

Description

탄성력과 내구성이 증대된 반도체 검사용 탐침{A probe needle for measuring the wafer chip quality}A probe needle for measuring the wafer chip quality with increased elasticity and durability

본 고안은 반도체 웨이퍼의 칩 특성측정에 사용되는 프로브 카드의 탐침에 관한 것으로, 보다 자세하게는 반도체 칩 상의 전극패드에 접촉되는 탐침의 내부 입자크기를 조립화(粗粒化)시킴으로써 탄성력과 내구성이 증대된 반도체 검사용 탐침에 관한 것이다.The present invention relates to a probe of a probe card used for measuring chip characteristics of a semiconductor wafer. More specifically, the elastic force and durability are increased by assembling the internal particle size of the probe contacting the electrode pad on the semiconductor chip. It relates to a semiconductor inspection probe.

일반적으로 웨이퍼를 구성하는 반도체 칩들의 불량 여부 검사를 위해 전기적인 특성을 이용하게 되는데, 이들 각 칩들과 접촉되면서 전기적 신호를 인가하여 불량 여부에 대한 판별의 기능을 수행하는 검사용 탐침이 연결된 '프로브 카드'라는 검사장치를 사용하게 된다.In general, the electrical characteristics are used to inspect the defects of the semiconductor chips constituting the wafer. The probes are connected to the probes that contact the chips and apply an electrical signal to determine whether the defects are defective. Card 'test device will be used.

반도체 칩의 특성검사 방법은 웨이퍼를 구성하는 반도체 칩들에 전기적 신호를 인가하고, 프로브 카드상에 연결된 탐침의 선단부에 전류를 가하여, 탐침과 반도체 칩이 접촉되는 순간 체크 되는 전기적 신호에 의해 불량 여부를 판단하게 된다.In the characteristic test method of the semiconductor chip, an electrical signal is applied to the semiconductor chips constituting the wafer, and a current is applied to the tip of the probe connected to the probe card to check whether the probe and the semiconductor chip are defective by the electrical signal which is checked at the moment of contact. You will be judged.

즉, 전기적 신호가 인가된 웨이퍼의 패드에 프로브 카드의 탐침이 접촉되게 함으로써, 이 탐침을 통해 일정한 전류를 흐르게 하여 그때의 전기적 특성을 측정하게 되는 것이다. That is, the probe of the probe card is brought into contact with the pad of the wafer to which the electrical signal is applied, so that a constant current flows through the probe to measure the electrical characteristics at that time.

이하, 첨부된 도면을 참조하여 일반적인 프로브 카드 장치에 대해 설명하면 다음과 같다.Hereinafter, a general probe card apparatus will be described with reference to the accompanying drawings.

도 1에서 보는 바와 같이, 각 탐침(12)의 일단은 PCB기판(11)을 관통하는 플러그(15)와 접촉하며 플러그(15) 및 결속선(16)으로 이루어진 패턴을 통해 카드 터미널(17)에 연결되고, 탐침(12)의 타단에는 거의 수직 방향으로 유도된 탐침 팁(13)이 형성되어 탐침 고정부(14)에 의해 지지 되며, 탐침 고정부(14)는 세라믹 재질이나 에폭시 수지 등의 절연체로 이루어져 있다.As shown in FIG. 1, one end of each probe 12 is in contact with the plug 15 penetrating the PCB substrate 11 and the card terminal 17 through a pattern consisting of the plug 15 and the tie line 16. The other end of the probe 12 is connected to the probe tip 13, which is guided in a substantially vertical direction, and is supported by the probe fixing part 14, and the probe fixing part 14 is made of ceramic material or epoxy resin. It consists of an insulator.

반도체 웨이퍼(20)는 대개 전기적 특성을 지니는 실리콘층(22)과 그 상부에 구성되는 전극패드(21)가 형성되어 있는데, 여기서 프로브 카드의 탐침 팁(13)이 반도체 웨이퍼(20) 상의 전극패드(21)에 접촉하여 테스트 장비와 연결된 프로브 카드(10)에 의해 특성측정이 수행된다.The semiconductor wafer 20 is usually formed with a silicon layer 22 having electrical properties and an electrode pad 21 formed thereon, wherein the probe tip 13 of the probe card is formed on the electrode pad on the semiconductor wafer 20. Characterization is performed by probe card 10 in contact with 21 and connected with test equipment.

이와 같은 구성의 장치에서 반도체 웨이퍼(20)의 칩 특성측정시 웨이퍼(20) 상의 전극(21)으로 프로브 카드에 연결된 탐침(13)이 접촉되는 순간 그 충격에 의해 전극(21) 아래로 존재하는 실리콘층(22) 내부에 균열이 발생하기도 한다.In the device of such a configuration, when the chip characteristic of the semiconductor wafer 20 is measured, the moment that the probe 13 connected to the probe card contacts the electrode 21 on the wafer 20 is present below the electrode 21 by the impact. Cracks may occur inside the silicon layer 22.

상기의 경우와 같은 이유로 인해 웨이퍼 상에 접촉하는 탐침은 내구성이 강해야 할 뿐만 아니라, 반도체 칩과의 접촉시 발생하는 충격에 대한 완충작용 역할을 할 수 있을 정도의 탄성력을 필요로 한다.For the same reason as described above, the probe contacting the wafer must be not only durable, but also need a resilient force that can act as a buffer against the impact generated when contacting the semiconductor chip.

그러나 기존에 사용되는 탐침은 자체적으로 완충작용을 수행할 수 없기 때문에 탐침이 웨이퍼에 접촉하는 순간 웨이퍼의 실리콘층에 균열이 쉽게 발생하고, 탐침이 약 0.1˚만 휘어지더라도 부러지게 되며, 마모에 의해 평탄도가 떨어져 프로브 카드 고장의 원인이 되기도 한다.However, the existing probe cannot be buffered by itself, so cracks easily occur in the silicon layer of the wafer as soon as the probe contacts the wafer, and the probe breaks even when the probe is bent only about 0.1 °. This may cause flatness and cause a probe card failure.

이러한 문제점으로 인해 반도체 칩의 불량 여부를 검사함에 있어서 불량에 대한 정확한 판별을 기대할 수가 없게 되고, 대체적으로 수입에 의존하고 있는 프로브 카드의 교환이 빈번해짐에 따라 작업 효율은 물론 생산단가가 높아지는 문제점이 발생하게 된다.Due to these problems, it is not possible to expect accurate determination of defects when inspecting semiconductor chips for defects. As a result, the replacement of probe cards, which mostly depend on imports, becomes more frequent, resulting in higher work efficiency and higher production costs. Will occur.

본 고안은 상기 종래 기술의 문제점을 보완하기 위해 안출된 것으로써, 본 고안의 목적은 프로브 카드에 연결되는 탐침의 입자크기를 조립화(粗粒化)시킴으로써, 반도체 검사용 탐침의 탄성 특성을 향상시키고, 그에 따라 반도체 검사용 탐침이 반도체 칩의 전극패드와의 접촉시에 발생할 수 있는 실리콘층의 균열 등을 방지할 수 있는 탄성력과 내구성이 증대된 반도체 검사용 탐침을 제공하는데 있다.The present invention has been made to solve the problems of the prior art, the object of the present invention is to improve the elastic properties of the probe for semiconductor inspection by assembling the particle size of the probe connected to the probe card Accordingly, the semiconductor inspection probe provides a semiconductor inspection probe having increased elasticity and durability that can prevent cracking of a silicon layer or the like that may occur when the semiconductor chip is in contact with an electrode pad of a semiconductor chip.

이를 위하여 본 고안에서는 텅스텐 재질의 반도체 검사용 탐침을 담금질 및 템퍼링 열처리 공정과정을 다수 회 반복수행함으로써, 반도체 칩의 전극패드와 접촉하는 반도체 검사용 탐침의 입자크기를 종래 10㎛이하에서 80∼200㎛의 입자크기로 조립화(粗粒化)시키는 것을 특징으로 한다.To this end, in the present invention, by repeatedly performing a process of quenching and tempering a tungsten semiconductor inspection probe a plurality of times, the particle size of the semiconductor inspection probe in contact with the electrode pad of the semiconductor chip is less than 80 ~ 200 in the conventional 10㎛ It is characterized by granulation with a particle size of 탆.

이하, 본 고안의 구성을 첨부된 도면을 참조하여 상세히 살펴본다.Hereinafter, the configuration of the present invention will be described in detail with reference to the accompanying drawings.

본 고안의 재료로는 종래 텅스텐을 사용하게 되며, 본 고안의 제조과정에서 내부입자의 크기 및 구조를 변형하는 열처리 공정을 수행하게 된다.As a material of the present invention, conventional tungsten is used, and in the manufacturing process of the present invention, a heat treatment process for modifying the size and structure of the internal particles is performed.

상기 열처리 공정은 텅스텐 재질의 반도체 검사용 탐침을 1600∼2000℃ 정도로 담금질한 뒤, 200∼300℃ 정도로 템퍼링 열처리 공정과정을 다수 회 반복수행하며, 이러한 열처리 공정을 통해 미세한 텅스텐 입자는 서로 결합되어 조립화(粗粒化)된다.In the heat treatment process, the semiconductor inspection probe made of tungsten material is quenched at about 1600 to 2000 ° C., and then the tempering heat treatment process is repeatedly performed at about 200 to 300 ° C. a plurality of times. It becomes angry.

도 2는 종래에 사용되고 있는 반도체 검사용 탐침의 전자현미경 확대사진이며, 도 3은 본 고안 일실시예의 전자현미경 확대사진이다.2 is an enlarged photograph of an electron microscope of a semiconductor inspection probe that is conventionally used, and FIG. 3 is an enlarged photograph of an electron microscope of an embodiment of the present invention.

상기 도 2, 3을 비교하여 보면, 종래 텅스텐 입자의 크기는 10㎛이하에 불과함에 비하여, 본 고안에서의 텅스텐 입자의 크기는 80∼200㎛의 입자크기로 조립화(粗粒化)되어 있음을 확인할 수 있다.2 and 3, the size of the conventional tungsten particles is only 10㎛ or less, the size of the tungsten particles in the present invention is granulated with a particle size of 80 ~ 200㎛ can confirm.

상기 조립화(粗粒化)된 텅스텐 입자에 의해, 본 고안에 의한 반도체 검사용 탐침은 종래의 경우보다 탄성력이 10% 이상 향상되므로 약 1°정도 휘어지더라도 부러지지 않으며, 반도체 검사용 탐침이 반도체 칩의 전극패드와의 접촉시 충격으로 발생할 수 있는 실리콘층의 균열 등을 방지할 수 있게 된다.Due to the granulated tungsten particles, the semiconductor inspection probe according to the present invention does not break even if it is bent by about 1 ° because the elastic force is improved by 10% or more compared with the conventional case. When the chip contacts the electrode pad, the silicon layer may be prevented from being cracked due to the impact.

한편, 본 고안은 도 1에 나타난 반도체 검사용 탐침의 형상과 같이 " ┓"자 형태에 국한되지 않으며, "┃"자 형태 등 다양한 형태로 사용될 수 있음을 밝혀둔다.On the other hand, the present invention is not limited to the "┓" shape, such as the shape of the semiconductor inspection probe shown in Figure 1, it turns out that can be used in various forms, such as "┃" shape.

이로써 반도체 검사용 탐침의 탄성력이 약 10% 이상 향상되고, 그에 따라 반도체 검사용 탐침이 반도체 칩의 전극패드와의 접촉시에 발생할 수 있는 실리콘층의 균열 등을 방지할 수 있게 됨은 물론 반도체 검사용 탐침의 내구성도 향상시킬 수 있는 효과가 있다.As a result, the elastic force of the semiconductor inspection probe is improved by about 10% or more, so that the semiconductor inspection probe can prevent cracking of the silicon layer or the like, which may occur when the semiconductor chip contacts the electrode pad. It also has the effect of improving the durability of the probe.

도 1은 일반적인 프로브 카드의 구성을 보여주는 도면이며,1 is a view showing the configuration of a typical probe card,

도 2는 종래에 사용되고 있는 반도체 검사용 탐침의 전자현미경 확대사진이며,2 is an enlarged photograph of an electron microscope of a semiconductor inspection probe that is conventionally used.

도 3은 본 고안 일실시예의 전자현미경 확대사진이다.3 is an enlarged photomicrograph of an embodiment of the present invention.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

10 : 프로브 카드 11 : PCB기판10: probe card 11: PCB

12 : 탐침 13 : 탐침 팁12: probe 13: probe tip

14 : 탐침 고정부 14 : 플러그14: probe fixing part 14: plug

15 : 결속선 16 : 카드 터미널15: ties 16: card terminal

20 : 반도체 검사용 탐침 21 : 전극패드20: probe for semiconductor inspection 21: electrode pad

22 : 실리콘 층22: silicon layer

Claims (1)

반도체 웨이퍼 칩의 특성측정을 위하여 프로브 카드에 장착되는 반도체 검사용 탐침에 있어서,In the semiconductor inspection probe mounted on the probe card for measuring the characteristics of the semiconductor wafer chip, 텅스텐 재질의 반도체 검사용 탐침을 담금질 및 템퍼링의 열처리 공정과정을 다수 회 반복수행함으로써, 텅스텐 입자의 크기를 80~200㎛ 범위로 형성시키되, 탐침의 형상을 " ┓"자 형태 또는 "┃"자 형태로 구성되는 것을 특징으로 하는 탄성력과 내구성이 증대된 반도체 검사용 탐침.By repeatedly performing the heat treatment process of quenching and tempering the semiconductor inspection probe made of tungsten material, the tungsten particles are formed in the range of 80 to 200 μm, and the shape of the probe is “┓” shaped or “┃” shaped. Probe for semiconductor inspection with increased elasticity and durability, characterized in that the configuration.
KR20-2005-0022526U 2005-08-03 2005-08-03 A probe needle for measuring the wafer chip quality KR200403352Y1 (en)

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