CN2694573Y - Broad band titanium jewel laser - Google Patents
Broad band titanium jewel laser Download PDFInfo
- Publication number
- CN2694573Y CN2694573Y CN 200420028841 CN200420028841U CN2694573Y CN 2694573 Y CN2694573 Y CN 2694573Y CN 200420028841 CN200420028841 CN 200420028841 CN 200420028841 U CN200420028841 U CN 200420028841U CN 2694573 Y CN2694573 Y CN 2694573Y
- Authority
- CN
- China
- Prior art keywords
- level crossing
- light
- laser
- ping
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Lasers (AREA)
Abstract
The utility model relates to a laser, in particular to a broad band titanium jewel laser. The provided broad band titanium jewel laser has the following effects: small volume, high electricity-light conversion efficiency, simple structure, and stable and high output power. The adapted technical proposal of the utility model is that the broad band titanium jewel laser is composed of a pumping source, a coupled system, and a resonant cavity; the pumping source is composed of a flat-flat cavity structure, comprising a first flat mirror and a third flat mirror; starting from the first flat mirror, the first flat mirror and the third flat mirror are respectively provided with a switching element which can proceed modulation to the base frequency light, an initial optical pumping source, a second plane harmonic wave mirror, and a double frequency crystal; a double frequency cavity which is composed of the second plane harmonic mirror, the third flat mirror, and the double frequency crystal which is arranged between the second plane harmonic mirror and the third flat mirror. The coupled system is used for coupling the pumping light generated by the pumping source into the resonant cavity, which is composed of the flat-flat cavity structure, comprising a fourth flat mirror and a fifth flat mirror. The utility model is chiefly used for the laser source.
Description
Technical field
The utility model relates to laser, relates in particular to the broadband ti sapphire laser.
Background technology
Document S.G.Bartoshevich et al., Sov.J.QE., disclose copper vapor laser ti sapphire laser as pumping source at 1989,19 (2): 138; Document P.F.Moulton, 1 st Annual Conference on Tunable SolidState Laser, La Jolla, Colf., 1984 disclose the ti sapphire laser of argon laser as pumping source; Document A.J.Brown et al., Laser Focus World., 1991, Vol.1, the No.2:44 photoflash lamp is as the ti sapphire laser of pumping source.Shortcomings such as above-mentioned ti sapphire laser exists that volume is big, the electrical-optical conversion efficiency is low, complex structure and power output are low.
Summary of the invention
For overcoming the deficiencies in the prior art, the purpose of this utility model provides the broadband ti sapphire laser that can bring following effect: volume is little, electrical-optical conversion efficiency height, simple in structure and power output is high and stable.
The technical solution adopted in the utility model is, a kind of broadband ti sapphire laser is made up of pumping source, coupled system resonant cavity, described pumping source comprises Ping-Ping cavity configuration that first level crossing and the 3rd level crossing constitute, between first level crossing and the 3rd level crossing, begin to be provided with successively switching device that fundamental frequency light is modulated, initial optical pump source, second plane harmonic wave mirror and the frequency-doubling crystal from first level crossing, the second plane harmonic wave mirror, the 3rd level crossing and between the frequency-doubling crystal that is provided with form frequency doubling cavity;
Described coupled system is for comprising the one 45 degree total reflective mirror, the 2 45 degree total reflective mirror and coupled lens successively, be coupled into the coupled system of resonant cavity in order to the pump light that pumping source is produced, the one 45 degree total reflective mirror and the coupling of the 3rd level crossing, coupled lens and the coupling of the 4th level crossing;
Described resonant cavity comprises Ping-Ping cavity configuration that the 4th level crossing and the 5th level crossing constitute, focus place at above-mentioned Ping-Ping cavity configuration inside-pumping light, be provided with titanium gem crystal by a water cooling plant cooling, the titanium gem crystal central axis is perpendicular to crystallographic axis, two logical light end faces cut with Brewster angle, and the normal and the crystallographic axis of two logical optical surfaces are in the same plane, and pump light becomes 60 ° of angles with the normal of logical optical surface.
Wherein,
Ping-Ping cavity configuration that described first level crossing and the 3rd level crossing constitute, the chamber is long to be 330mm;
First level crossing plating fundamental frequency light 1064nm film that is all-trans;
The second plane harmonic wave mirror coating basic frequency light anti-reflection film, the 532nm frequency doubled light film that is all-trans;
The 3rd level crossing plating fundamental frequency light high-reflecting film, the frequency doubled light high transmittance film.
Described initial optical pump source is the diode laser matrix according to triangular arranged, employing side-pumping mode pumping laser medium, laser medium is 1% Nd:YAG for the doping content that produces 1064nm fundamental frequency light, be of a size of φ 3 * 65mm, the side hacking, grinding two end surfaces, coating basic frequency light anti-reflection film.
Described frequency-doubling crystal is a ktp crystal, adopts II class phase matched, and cutting angle is φ=23.6 °, and θ=90 ° are of a size of 5 * 5 * 10mm, the anti-reflection film of two sides plating fundamental frequency light and frequency doubled light.
Crystal is the fused quartz of φ 8mm * 10mm * 50mm in the described switching device, and modulating frequency is 2~30KHz.
Ping-Ping cavity configuration that described the 4th level crossing and the 5th level crossing constitute, the chamber is long to be 60mm;
The 4th level crossing plating pump light anti-reflection film, the 750~850nm film that is all-trans;
The 5th level crossing plating 750~850nm pellicle, transmitance is 15%.
Described the one 45 degree total reflective mirror, the 2 45 degree total reflective mirror are 45 ° of total reflective mirrors of 532nm wave band, and coupled lens is convex lens, and focal length is 100mm.
Described titanium gem crystal is of a size of 5 * 5 * 16mm.
The broadband ti sapphire laser that the utility model provides can bring following effect: because the pumping source in employing the utility model, higher pump power and broadband ti sapphire laser power output and stability can be obtained, and the volume of laser can be dwindled greatly.
Adopt switching device that fundamental frequency light is modulated, can improve the output peak power of one-level laser aid.
In order to increase coupling efficiency, reduce the difficulty of adjusting light path simultaneously, utilize two 45 ° of total reflective mirrors and convex lens as coupled system, adopt simple Ping-Ping cavity configuration to realize the resonant cavity of ti sapphire laser.
Main is, because overall structure of the present utility model, thereby compares with the pulse ti sapphire laser, and the titanium precious stone laser that the utility model provides can turn round with higher repetition rate; Compare with continuous ti sapphire laser, the titanium precious stone laser that provides in the utility model can be realized higher power output.
Description of drawings
Fig. 1 is the utility model overall structure figure, and as Figure of abstract.
Fig. 2 is initial optical pump source structure chart.
Fig. 3 is cavity resonator structure figure.
Embodiment
The utility model overall structure as shown in Figure 1.P is the pumping source of ti sapphire laser resonant cavity, and L is a coupling focusing lens, and T is the resonant cavity of tunable ti sapphire laser.
M
1And M
3Constituted Ping-Ping cavity configuration of P, the chamber is long to be 330mm.M
2And M
3Formed the KTP frequency doubling cavity.The parameter of chamber mirror is as follows: M
1Be level crossing, the plating fundamental frequency light 1064nm film that is all-trans; M
2Be the plane harmonic wave mirror, coating basic frequency light anti-reflection film, the 532nm frequency doubled light film that is all-trans; M
3Be level crossing, plating fundamental frequency light high-reflecting film, frequency doubled light high transmittance film.LD is a diode laser matrix, as initial optical pump source, according to triangular arranged, adopt the mode pumping laser medium of side-pumping, concrete structure is seen Fig. 2, and the light that diode laser matrix LD produces is injected the mozzle Flow Tube of band outer cover HR Coating through Cylindrical Lens lens.Doping content be 1% Nd:YAG as the laser medium that produces 1064nm fundamental frequency light, be of a size of φ 3 * 65mm, the side hacking increases the absorption of pump light, grinding two end surfaces, coating basic frequency light anti-reflection film.Frequency-doubling crystal adopts ktp crystal, adopts II class phase matched, and cutting angle is φ=23.6 °, and θ=90 ° are of a size of 5 * 5 * 10mm, the anti-reflection film of two sides plating fundamental frequency light and frequency doubled light.The Q switching device is produced by Britain NEOS company, and wherein crystal is the fused quartz of φ 8mm * 10mm * 50mm, and modulating frequency is 2 ~ 30KHz.
The 532nm pump light enters T by 45 ° of total reflective mirror M6 of two 532nm wave bands, total reflective mirror M7 and a slice coupled lens L, and the L focal length is 100mm.
M
4And M
5Constituted Ping-Ping cavity configuration of T, the chamber is long to be 60mm.Cavity mirror parameter is as follows: M
4Be level crossing, plating pump light anti-reflection film, the 750 ~ 850nm film that is all-trans; M
5Be level crossing, plating 750 ~ 850nm pellicle, transmitance is 15%.Titanium gem crystal size 5 * 5 * 16mm is positioned over the focus place of intracavity pump light, by a water cooling plant cooling.Titanium gem crystal Ti (sapphire) central axis is perpendicular to crystallographic axis c, and two logical light end faces cut with Brewster angle, and the normal and the crystallographic axis c of two logical optical surfaces are in the same plane, and pump light becomes 60 ° of angles with the normal of logical optical surface.As shown in Figure 3.
Up to the present, though with embodiment of the present utility model is that the center has been described in detail, the personnel that have general knowledge under the utility model in the technical field can propose a lot of distortion and application in basic fundamental thought range of the present utility model.These distortion and application all should belong in the scope of the present utility model.
The broadband ti sapphire laser that the utility model provides can bring following effect:
First point adopts the one-level laser aid in this device, can obtain higher pump power, and pump power can reach 30W.
Second point can dwindle the volume of laser greatly, and whole device size is 400mm * 300mm.
Thirdly, that the utility model provides is all solid state, the power output of high power, high light beam quality, quasi-continuous broadband ti sapphire laser is 10W to the maximum, is much higher than the power output index of continuous ti sapphire laser.
The 4th point, that the utility model provides is all solid state, high power, high light beam quality, quasi-continuous broadband ti sapphire laser repetition rate are 10KHz, is much higher than the repetition rate of pulse ti sapphire laser.
The 5th point, the titanium precious stone laser beam quality M that the utility model provides
2<5, titanium precious stone laser pulse duration<80ns, titanium precious stone laser bandwidth 50nm.
The 6th point, that the utility model provides is all solid state, the stability of high power, high light beam quality, quasi-continuous broadband ti sapphire laser power output is 5%.
The broadband ti sapphire laser that invention provides not only has important academic values in the scientific research field, and also has extremely important realistic meaning in industrial production and military field.More compact as a kind of structure, operation is more reliable, the more easy new type light source of maintenance, this patent has extremely wide application prospect for fields such as the research of laser spectral analysis, laser chemistry, photodynamics, novel optical material, optical communication, atmospheric optics, medical optics, pollution detection, laser pumping, laser amplification, laser remote sensing, laser radars.
Claims (8)
1. a broadband ti sapphire laser is made up of pumping source, coupled system resonant cavity, it is characterized in that:
Described pumping source comprises the first level crossing (M
1) and the 3rd level crossing (M
3) Ping-Ping cavity configuration of constituting, at the first level crossing (M
1) and the 3rd level crossing (M
3) between from the first level crossing (M
1) beginning is provided with switching device (Q) that fundamental frequency light is modulated, initial optical pump source, the second plane harmonic wave mirror (M successively
2) and frequency-doubling crystal, the second plane harmonic wave mirror (M
2), the 3rd level crossing (M
3) and between the frequency-doubling crystal that is provided with form frequency doubling cavity;
Described coupled system is for comprising the one 45 degree total reflective mirror (M6), the 2 45 degree total reflective mirror (M7) and coupled lens (L) successively, be coupled into the coupled system of resonant cavity, the one 45 degree total reflective mirror (M6) and the 3rd level crossing (M in order to the pump light that pumping source is produced
3) coupling, coupled lens (L) and the 4th level crossing (M
4) coupling;
Described resonant cavity comprises the 4th level crossing (M
4) and the 5th level crossing (M
5) Ping-Ping cavity configuration of constituting, focus place at above-mentioned Ping-Ping cavity configuration inside-pumping light, be provided with titanium gem crystal by a water cooling plant cooling, the titanium gem crystal central axis is perpendicular to crystallographic axis (c), two logical light end faces cut with Brewster angle, and the normal and the crystallographic axis (c) of two logical optical surfaces are in the same plane, and pump light becomes 60 ° of angles with the normal of logical optical surface.
2. a kind of broadband according to claim 1 ti sapphire laser is characterized in that,
The described first level crossing (M
1) and the 3rd level crossing (M
3) Ping-Ping cavity configuration of constituting, the chamber is long to be 330mm;
First level crossing (the M
1) the plating fundamental frequency light 1064nm film that is all-trans;
The second plane harmonic wave mirror (M
2) coating basic frequency light anti-reflection film, the 532nm frequency doubled light film that is all-trans;
The 3rd level crossing (M
3) plating fundamental frequency light high-reflecting film, the frequency doubled light high transmittance film.
3. a kind of broadband according to claim 1 ti sapphire laser, it is characterized in that, described initial optical pump source is the diode laser matrix (LD) according to triangular arranged, employing side-pumping mode pumping laser medium, laser medium is 1% Nd:YAG for the doping content that produces 1064nm fundamental frequency light, be of a size of φ 3 * 65mm, the side hacking, grinding two end surfaces, coating basic frequency light anti-reflection film.
4. a kind of broadband according to claim 1 ti sapphire laser is characterized in that described frequency-doubling crystal is a ktp crystal, adopt II class phase matched, cutting angle is φ=23.6 °, θ=90 °, be of a size of 5 * 5 * 10mm, the anti-reflection film of two sides plating fundamental frequency light and frequency doubled light.
5. a kind of broadband according to claim 1 ti sapphire laser is characterized in that, crystal is the fused quartz of φ 8mm * 10mm * 50mm in the described switching device (Q), and modulating frequency is 2~30KHz.
6. a kind of broadband according to claim 1 ti sapphire laser is characterized in that,
Described the 4th level crossing (M
4) and the 5th level crossing (M
5) Ping-Ping cavity configuration of constituting, the chamber is long to be 60mm;
The 4th level crossing (M
4) plating pump light anti-reflection film, 750~850nm film that is all-trans;
The 5th level crossing (M
5) plating 750~850nm pellicle, transmitance is 15%.
7. a kind of broadband according to claim 1 ti sapphire laser is characterized in that, described the one 45 degree total reflective mirror (M6), the 2 45 degree total reflective mirror (M7) are 45 ° of total reflective mirrors of 532nm wave band, and coupled lens (L) is convex lens, and focal length is 100mm.
8. a kind of broadband according to claim 1 ti sapphire laser is characterized in that described titanium gem crystal is of a size of 5 * 5 * 16mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200420028841 CN2694573Y (en) | 2004-04-26 | 2004-04-26 | Broad band titanium jewel laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200420028841 CN2694573Y (en) | 2004-04-26 | 2004-04-26 | Broad band titanium jewel laser |
Publications (1)
Publication Number | Publication Date |
---|---|
CN2694573Y true CN2694573Y (en) | 2005-04-20 |
Family
ID=34771964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200420028841 Expired - Fee Related CN2694573Y (en) | 2004-04-26 | 2004-04-26 | Broad band titanium jewel laser |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN2694573Y (en) |
-
2004
- 2004-04-26 CN CN 200420028841 patent/CN2694573Y/en not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100345346C (en) | Multi wave length simultaneously output full solid state tunnable laser light source | |
CN101592845B (en) | Dual-wavelength tunable inner cavity tera-hertz parametric oscillator and using method thereof | |
CN101950918B (en) | Self-frequency doubling green light solid-state laser suitable for laser display | |
CN105071214A (en) | Method for producing deep ultraviolet laser light through visible laser direct frequency conversion and all-solid-state deep ultraviolet laser | |
CN1905294A (en) | LD pumping cogain double cavity very-large frequency difference double frequency Nd:YAG laser | |
CN106785847A (en) | A kind of pair of wavelength tunable solid laser of composite resonant cavity configuration | |
CN1855648A (en) | Generation of solid laser with biquadratic harmonic wave | |
CN200947525Y (en) | All solid state tunable narrow band THz wave light source | |
CN211700924U (en) | Optical frequency comb | |
CN101051165A (en) | End surface pump contineous blue light laser | |
CN2694573Y (en) | Broad band titanium jewel laser | |
CN2694574Y (en) | Tunable titanium jewel laser | |
CN2882042Y (en) | Whole solid quasi-continuous broadband near-infrared coherent light source | |
CN1305182C (en) | Tunable light source of pollution detection instrument | |
CN203895739U (en) | Device used for generating high-mean-power quasi-continuous pulse green laser | |
CN104300355A (en) | Optical parametric oscillation laser device based on lanthanum gallium silicate crystal | |
CN1200491C (en) | High-power semiconductor laser frequency converter | |
CN1571225A (en) | Novel light source for biomedical imager | |
CN203895738U (en) | Device used for generating high-mean-power quasi-continuous ultraviolet pulse laser | |
CN2800595Y (en) | Tunable titanium sapphire laser capable of full solid-state quasi- continuous dual wavelength operation | |
CN210379757U (en) | Tunable purple light pulse laser | |
CN100337373C (en) | Internal cavity multiple frequency laser of laser diode pump | |
CN200969480Y (en) | Gain switch-type giant pulse titanium laser | |
CN201549762U (en) | Intermediate infrared laser system | |
CN2812352Y (en) | Full-solid quasi-continuous wavelength tuning Titanium-doped sapphire -PPLN optical parametric oscillator |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |