CN2672956Y - DC dropping voltage stabilizer - Google Patents
DC dropping voltage stabilizer Download PDFInfo
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- CN2672956Y CN2672956Y CN 200320121452 CN200320121452U CN2672956Y CN 2672956 Y CN2672956 Y CN 2672956Y CN 200320121452 CN200320121452 CN 200320121452 CN 200320121452 U CN200320121452 U CN 200320121452U CN 2672956 Y CN2672956 Y CN 2672956Y
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Abstract
The utility model relates to a direct current voltage converter, in particular to a direct current voltage converter which adopts MSO field-effect transistor circuit. The alternating current power supply experiences half-wave rectification through a peripheral circuit and the voltage is reduced to input voltage 60-70V by a resistor. The interior of the utility model mainly comprises a voltage stabilizing circuit and a voltage step down and voltage stabilizing circuit. The function of the voltage stabilizing circuit is that it makes the power supply simply treated by the peripheral circuit to proceed voltage stabilization, and then provides a stable power supply for the followed stage circuit. The function of the voltage step down and voltage stabilizing circuit is that it reduces the voltage of the power supply treated by the voltage stabilizing circuit and obtains the low-voltage power supply needed for the load circuit. At the same time, the output voltage proceeds a high accuracy voltage stabilization and ensures that the last output low-voltage power supply is a stable and available power supply. Consequently, the design of the peripheral circuit is simplified greatly to reach to the purpose of effectively economizing the cost, raising the machining speed and increasing the reliability.
Description
Affiliated technical field
The utility model relates to DC voltage converter, especially adopts the DC voltage converter of metal-oxide-semiconductor field effect transistor circuit.
Background technology
DC voltage converter, the simplest have adopt electric resistance partial pressure, this mode, during as the voltage stabilizing power supply, the electric energy that peripheral power reguirements height and resistance are expended is many; Also have and adopt after the oscillator inversion again rectifying and voltage-stabilizing, this mode, the circuit structure complexity, the size that takes up room is big.
Summary of the invention
The utility model aims to provide a kind of low to peripheral power reguirements, and power consumption less and take the DC decompression pressurizer that sky asks that size is little.
The purpose of this utility model realizes by following scheme: the DC decompression pressurizer comprises two metal-oxide-semiconductor field effect transistors, two voltage stabilizing didoes and two step-down and voltage stabilizing circuits that resistance is formed; Wherein, this DC decompression of termination pressurizer dc voltage input end of the drain electrode of first metal-oxide-semiconductor field effect transistor and first resistance; The source electrode of first metal-oxide-semiconductor field effect transistor connects the drain electrode of second metal-oxide-semiconductor field effect transistor; The negative electrode of first voltage stabilizing didoe of another termination of the grid of first metal-oxide-semiconductor field effect transistor and first resistance; The anode of first voltage stabilizing didoe connects the negative electrode of second voltage stabilizing didoe and the grid of second metal-oxide-semiconductor field effect transistor; The plus earth of second voltage stabilizing didoe; The end that the source electrode of second metal-oxide-semiconductor field effect transistor connects second resistance constitutes this DC decompression pressurizer dc voltage output end; The other end ground connection of second resistance.
Be to eliminate output ripple, improve output voltage stability: also be serially connected with the current sample feedback circuit between second resistance of described step-down and voltage stabilizing circuit and ground, the output of this current sample feedback circuit is connected to the source electrode of first metal-oxide-semiconductor field effect transistor.
A kind of structure of recommendation is: second current mirror that first current mirror that described current sample feedback circuit is made up of two metal-oxide-semiconductor field effect transistors, two P type channel MOS field effect transistor are formed is formed with a metal-oxide-semiconductor field effect transistor that is connected these two current mirrors; Wherein, form in two metal-oxide-semiconductor field effect transistors of first current mirror common former earth terminal that connects second resistance of the grid of the drain and gate of the 3rd metal-oxide-semiconductor field effect transistor and the 4th metal-oxide-semiconductor field effect transistor, and source ground; The source ground of the 4th metal-oxide-semiconductor field effect transistor; Form in two P type channel MOS field effect transistor of second current mirror, the source electrode of the source electrode of the 6th field effect transistor and the 7th field effect transistor is connected the source electrode of first metal-oxide-semiconductor field effect transistor jointly; The common drain electrode that connects the 5th metal-oxide-semiconductor field effect transistor of the grid of the drain and gate of the 6th field effect transistor and the 7th field effect transistor; The source electrode of the 5th metal-oxide-semiconductor field effect transistor is connected to the drain electrode of the 4th metal-oxide-semiconductor field effect transistor; The grid of the 5th metal-oxide-semiconductor field effect transistor is connected to the grid of second metal-oxide-semiconductor field effect transistor and the drain electrode of the 7th field effect transistor.
Be further to eliminate output ripple, improve output voltage stability: the two ends at second voltage stabilizing didoe of described step-down and voltage stabilizing circuit are parallel with first electric capacity.And, in described step-down and voltage stabilizing circuit, also have second electric capacity; The source electrode of described second metal-oxide-semiconductor field effect transistor connects an end of second electric capacity, the other end ground connection of second electric capacity.
This DC decompression pressurizer can also be accepted the Voltage pulsating direct-current supply input: inside mainly is made up of two parts, and a part is the input voltage stabilizing circuit, and another part is step-down and voltage stabilizing circuit; The input voltage stabilizing circuit is connected in parallel between this DC decompression pressurizer dc voltage input end and the ground wire.
A kind of simple input voltage stabilizing circuit comprises a metal-oxide-semiconductor field effect transistor, a voltage stabilizing didoe and a resistance; The drain electrode of this metal-oxide-semiconductor field effect transistor and the negative electrode of this voltage stabilizing didoe connect this DC decompression pressurizer dc voltage input end; The grid of this metal-oxide-semiconductor field effect transistor and the anode of this voltage stabilizing didoe connect an end of this resistance; The other end ground connection of the source electrode of this metal-oxide-semiconductor field effect transistor and this resistance.
This DC decompression pressurizer, each metal-oxide-semiconductor field effect transistor and voltage stabilizing didoe are manufactured on the same integrated circuit (IC) chip in step-down and the voltage stabilizing circuit.
This DC decompression pressurizer also can be: each metal-oxide-semiconductor field effect transistor and voltage stabilizing didoe are manufactured on the same integrated circuit (IC) chip in step-down and voltage stabilizing circuit and the input voltage stabilizing circuit.
The utility model DC decompression pressurizer, after importing the power supply voltage stabilizing with the periphery, inner input voltage stabilizing circuit becomes a basicly stable direct voltage, this voltage is loaded into back level step-down and voltage stabilizing circuit, this circuit is mainly connected with sampling resistor by first metal-oxide-semiconductor field effect transistor and second metal-oxide-semiconductor field effect transistor and is finished step-down work, second voltage stabilizing didoe limits the grid voltage of second metal-oxide-semiconductor field effect transistor, it is poor that first voltage stabilizing didoe limits the grid voltage of first metal-oxide-semiconductor field effect transistor and second metal-oxide-semiconductor field effect transistor, thereby the grid voltage that makes first metal-oxide-semiconductor field effect transistor and second metal-oxide-semiconductor field effect transistor works in a metastable state, also can determine simultaneously the height of first metal-oxide-semiconductor field effect transistor and the second metal-oxide-semiconductor field effect transistor output voltage, also be serially connected with the current sample feedback circuit between the sampling resistor of step-down and voltage stabilizing circuit and the ground, the output of this circuit is connected to the source electrode of first metal-oxide-semiconductor field effect transistor, thereby reaches the requirement of fine setting stable precision output required voltage.The voltage stabilizing didoe of input voltage stabilizing circuit voltage by a metal-oxide-semiconductor field effect transistor that is connected in parallel on power input, this metal-oxide-semiconductor field effect transistor grid of control and between draining and one provide the resistance of this metal-oxide-semiconductor field effect transistor gate bias voltage to form; Simple in structure.Make the utility model can on-line operation in the situation of 60-70V pulsating voltage, low to peripheral power reguirements; Each metal-oxide-semiconductor field effect transistor of forming circuit and voltage stabilizing didoe can be manufactured on the integrated circuit (IC) chip, thereby power consumption less and the little design of simplifying peripheral circuit greatly of the size that takes up room, and can effectively save cost, improve process velocity and reliability.
Description of drawings
Fig. 1 is the structural representation of an embodiment of the utility model DC decompression pressurizer.
Fig. 2 is the structural representation of an embodiment of input voltage stabilizing circuit of the utility model DC decompression pressurizer.
Fig. 3 is the structural representation of an embodiment being connected with peripheral circuit of the utility model DC decompression pressurizer.
Embodiment
The structure of an embodiment of the utility model DC decompression pressurizer sees also Fig. 1.This DC decompression pressurizer, can on-line operation in the 60-70V pulsating voltage as the input power supply, its inside mainly is made up of two parts, a part is an input voltage stabilizing circuit 1, another part is step-down and voltage stabilizing circuit 2.
Input voltage stabilizing circuit 1 is connected in parallel between dc voltage input end VDD and the ground wire.
Step-down and voltage stabilizing circuit 2 comprise five N type channel MOS field effect transistor MOS1～5, two P type channel MOS field effect transistor MOS6～7, two voltage stabilizing didoe Z1～2, two resistance R 1～2 and two capacitor C 1～2.
In the major loop 21 of step-down and voltage stabilizing circuit 2, this DC decompression of termination pressurizer dc voltage input end VDD of the drain electrode of first metal-oxide-semiconductor field effect transistor MOS1 and first resistance R 1; The source electrode of first metal-oxide-semiconductor field effect transistor MOS 1 connects the drain electrode of second metal-oxide-semiconductor field effect transistor MOS2; The negative electrode of first voltage stabilizing didoe Z1 of another termination of the grid of first metal-oxide-semiconductor field effect transistor MOS1 and first resistance R 1; The anode of first voltage stabilizing didoe Z1 connects the negative electrode of second voltage stabilizing didoe Z2 and the grid of second metal-oxide-semiconductor field effect transistor MOS2; The plus earth of second voltage stabilizing didoe Z2; The two ends of second voltage stabilizing didoe Z2 are parallel with first electric capacity 1.The source electrode of second metal-oxide-semiconductor field effect transistor MOS2 connects an end of second resistance R 2 and an end of second capacitor C 2 constitutes this DC decompression pressurizer dc voltage output end OUT; The other end ground connection of second capacitor C 2.The other end of second resistance R 2 is former should ground connection.But in the present embodiment, also be serially connected with current sample feedback circuit 22 between second resistance R 2 of the major loop 21 of described step-down and voltage stabilizing circuit 2 and ground, the output of this current sample feedback circuit 22 is connected to the source electrode of first metal-oxide-semiconductor field effect transistor MOS1.
First current mirror that current sample feedback circuit 22 is made up of two metal-oxide-semiconductor field effect transistor MOS3～4, two P type channel MOS field effect transistor MOS6～7 second current mirrors of forming are connected these two current mirrors with one metal-oxide-semiconductor field effect transistor MOS5 forms.Wherein, form in two metal-oxide-semiconductor field effect transistor MOS3～4 of first current mirror common former earth terminal that connects second resistance R 2 of the grid of the drain and gate of the 3rd metal-oxide-semiconductor field effect transistor MOS3 and the 4th metal-oxide-semiconductor field effect transistor MOS4, and source ground.The source ground of the 4th metal-oxide-semiconductor field effect transistor MOS4.Form in two P type channel MOS field effect transistor MOS6～7 of second current mirror, the source electrode of the source electrode of the 6th field effect transistor MOS6 and the 7th field effect transistor MOS7 is connected the source electrode of first metal-oxide-semiconductor field effect transistor MOS1 jointly; The common drain electrode that connects the 5th metal-oxide-semiconductor field effect transistor MOS5 of the grid of the drain and gate of the 6th field effect transistor MOS6 and the 7th field effect transistor MOS7; The source electrode of the 5th metal-oxide-semiconductor field effect transistor MOS5 is connected to the drain electrode of the 4th metal-oxide-semiconductor field effect transistor MOS4; The grid of the 5th metal-oxide-semiconductor field effect transistor MOS5 is connected to the drain electrode of grid and the 7th the field effect transistor MOS7 of second metal-oxide-semiconductor field effect transistor MOS2.
The hypotensive effect of step-down and voltage stabilizing circuit 2 mainly is to utilize the characteristic that metal-oxide-semiconductor is high pressure resistant and power consumption is little to realize that the pulsafeeder voltage that external circuit is come in becomes a basicly stable direct current 60-70V voltage through after inner input voltage stabilizing circuit 1 voltage stabilizing.This voltage is loaded into back level step-down and voltage stabilizing circuit 2, and this circuit is mainly finished step-down work by first metal-oxide-semiconductor field effect transistor MOS1 and second metal-oxide-semiconductor field effect transistor MOS2, and all the other metal-oxide-semiconductors play the fine setting stabilization.Wherein first metal-oxide-semiconductor field effect transistor MOS1 is high-voltage MOS pipe, thereby make the grid voltage of first metal-oxide-semiconductor field effect transistor MOS1 and second metal-oxide-semiconductor field effect transistor MOS2 work in a metastable state by two voltage stabilizing didoe Z1 and Z2, simultaneously also can determine the height of first metal-oxide-semiconductor field effect transistor MOS1 and second metal-oxide-semiconductor field effect transistor MOS2 output voltage, thereby reach the requirement of the required power supply of pio chip internal circuit.Sampling resistor R2 is by the sampling to output voltage, the output situation is delivered to the 3rd metal-oxide-semiconductor field effect transistor MOS3, and the current mirroring circuit of forming by the 3rd metal-oxide-semiconductor field effect transistor MOS3 and the 4th metal-oxide-semiconductor field effect transistor MOS4 is mirrored to the 4th metal-oxide-semiconductor field effect transistor MOS4 output with sample rate current.Thereby have influence on the source class voltage of the 5th metal-oxide-semiconductor field effect transistor MOS5, because the grid voltage of the 5th metal-oxide-semiconductor field effect transistor MOS5 is stabilized to a definite value by voltage stabilizing didoe Z2, the change of the 5th metal-oxide-semiconductor field effect transistor MOS5 source class voltage can have influence on the size by the electric current of the 5th metal-oxide-semiconductor field effect transistor MOS5, this electric current is sent to the 6th metal-oxide-semiconductor field effect transistor MOS6, the current mirroring circuit of forming by the 6th metal-oxide-semiconductor field effect transistor MOS6 and the 7th metal-oxide-semiconductor field effect transistor MOS7 is with seven metal-oxide-semiconductor field effect transistor MOS7 of this current mirror to the, influence the output of first metal-oxide-semiconductor field effect transistor MOS, 1 source class electric current by this, thereby further have influence on the output of output voltage, reach purpose the output voltage stable precision.Simultaneously also can reach the certain protection effect to first metal-oxide-semiconductor field effect transistor MOS1.This mode is by the fine setting of feedback circuit realization to outputs at different levels, thereby reaches the stable purpose of output, reduces the ripple of out-put supply, reaches the requirement of back level load circuit use.The purpose of resistance R 1 is to provide power supply to voltage stabilizing didoe Z1～2 in the circuit, capacitor C 1～2nd, and filter capacitor, effect is the noise signal that the filtering each point may exist, and plays the effect of stablizing each point voltage.
The effect of the input voltage stabilizing circuit 1 of the utility model DC decompression pressurizer only provides to metastable operating voltage of back level, therefore less demanding to the circuit of this part, and a lot of actual circuit that use can reach this requirement.Among Fig. 2 illustration a kind of input voltage stabilizing circuit 1 that can realize voltage stabilizing again simple in structure.The input voltage stabilizing circuit comprises a metal-oxide-semiconductor field effect transistor MOS0, a voltage stabilizing didoe Z0 and a resistance R 0; The drain electrode of this metal-oxide-semiconductor field effect transistor MOS0 and the negative electrode of voltage stabilizing didoe Z0 meet this DC decompression pressurizer dc voltage input end VDD; The grid of this metal-oxide-semiconductor field effect transistor MOS0 and the anode of voltage stabilizing didoe Z0 connect an end of this resistance R 0; The source electrode of this metal-oxide-semiconductor field effect transistor MOS0 and the other end ground connection of resistance R 0.Voltage stabilizing didoe Z0 plays pressure stabilization function in circuit shown in Figure 2, and metal-oxide-semiconductor field effect transistor MOS0 provides the bleed-off circuit of electric current, designs the requirement of going up voltage stabilizing didoe Z0 thereby reduce.Resistance R 0 provides the gate bias voltage of metal-oxide-semiconductor field effect transistor MOS0, the size of the electric current of the voltage stabilizing didoe of restricted passage simultaneously Z0.
The utility model DC decompression pressurizer can preferably be manufactured on each metal-oxide-semiconductor field effect transistor and voltage stabilizing didoe in step-down and voltage stabilizing circuit and the input voltage stabilizing circuit on the same integrated circuit (IC) chip with the resolution element assembling in the circuit board.
A typical application circuit of the utility model DC decompression pressurizer as shown in Figure 3.This circuit is serially connected in a resistance in the AC power, an electric capacity and a rectifier diode by peripheral circuit, with the AC power dividing potential drop and through providing the DC decompression pressurizer to use after the halfwave rectifier, realize hypotensive effect by the auxiliary DC decompression pressurizer internal circuit of peripheral resistance simultaneously.The last out-put supply that obtains by the DC decompression pressurizer be one stable, available low-voltage dc power supply uses for load.
Claims (10)
1. a DC decompression pressurizer is characterized in that: comprise two metal-oxide-semiconductor field effect transistors, two voltage stabilizing didoes and two step-down and voltage stabilizing circuits that resistance is formed; Wherein, this DC decompression of termination pressurizer dc voltage input end of the drain electrode of first metal-oxide-semiconductor field effect transistor and first resistance; The source electrode of first metal-oxide-semiconductor field effect transistor connects the drain electrode of second metal-oxide-semiconductor field effect transistor; The negative electrode of first voltage stabilizing didoe of another termination of the grid of first metal-oxide-semiconductor field effect transistor and first resistance; The anode of first voltage stabilizing didoe connects the negative electrode of second voltage stabilizing didoe and the grid of second metal-oxide-semiconductor field effect transistor; The plus earth of second voltage stabilizing didoe; The end that the source electrode of second metal-oxide-semiconductor field effect transistor connects second resistance constitutes this DC decompression pressurizer dc voltage output end; The other end ground connection of second resistance.
2. a kind of DC decompression pressurizer according to claim 1, it is characterized in that: also be serially connected with the current sample feedback circuit between second resistance of described step-down and voltage stabilizing circuit and ground, the output of this current sample feedback circuit is connected to the source electrode of first metal-oxide-semiconductor field effect transistor.
3. a kind of DC decompression pressurizer according to claim 2 is characterized in that: second current mirror that first current mirror that described current sample feedback circuit is made up of two metal-oxide-semiconductor field effect transistors, two P type channel MOS field effect transistor are formed is formed with a metal-oxide-semiconductor field effect transistor that is connected these two current mirrors; Wherein, form in two metal-oxide-semiconductor field effect transistors of first current mirror common former earth terminal that connects second resistance of the grid of the drain and gate of the 3rd metal-oxide-semiconductor field effect transistor and the 4th metal-oxide-semiconductor field effect transistor, and source ground; The source ground of the 4th metal-oxide-semiconductor field effect transistor; Form in two P type channel MOS field effect transistor of second current mirror, the source electrode of the source electrode of the 6th field effect transistor and the 7th field effect transistor is connected the source electrode of first metal-oxide-semiconductor field effect transistor jointly; The common drain electrode that connects the 5th metal-oxide-semiconductor field effect transistor of the grid of the drain and gate of the 6th field effect transistor and the 7th field effect transistor; The source electrode of the 5th metal-oxide-semiconductor field effect transistor is connected to the drain electrode of the 4th metal-oxide-semiconductor field effect transistor; The grid of the 5th metal-oxide-semiconductor field effect transistor is connected to the grid of second metal-oxide-semiconductor field effect transistor and the drain electrode of the 7th field effect transistor.
4. according to claim 1 or 2 or 3 described a kind of DC decompression pressurizers, it is characterized in that: the two ends at second voltage stabilizing didoe of described step-down and voltage stabilizing circuit are parallel with first electric capacity.
5. according to claim 1 or 2 or 3 described a kind of DC decompression pressurizers, it is characterized in that: in described step-down and voltage stabilizing circuit, also have second electric capacity; The source electrode of described second metal-oxide-semiconductor field effect transistor connects an end of second electric capacity, the other end ground connection of second electric capacity.
6. according to claim 1 or 2 or 3 described a kind of DC decompression pressurizers, it is characterized in that: inside mainly is made up of two parts, and a part is the input voltage stabilizing circuit, and another part is step-down and voltage stabilizing circuit; The input voltage stabilizing circuit is connected in parallel between this DC decompression pressurizer dc voltage input end and the ground wire.
7. a kind of DC decompression pressurizer according to claim 6 is characterized in that: described input voltage stabilizing circuit comprises a metal-oxide-semiconductor field effect transistor, a voltage stabilizing didoe and a resistance; The drain electrode of this metal-oxide-semiconductor field effect transistor and the negative electrode of this voltage stabilizing didoe connect this DC decompression pressurizer dc voltage input end; The grid of this metal-oxide-semiconductor field effect transistor and the anode of this voltage stabilizing didoe connect an end of this resistance; The other end ground connection of the source electrode of this metal-oxide-semiconductor field effect transistor and this resistance.
8. according to claim 1 or 2 or 3 described a kind of DC decompression pressurizers, it is characterized in that: each metal-oxide-semiconductor field effect transistor and voltage stabilizing didoe are manufactured on the same integrated circuit (IC) chip in described step-down and the voltage stabilizing circuit.
9. a kind of DC decompression pressurizer according to claim 6 is characterized in that: each metal-oxide-semiconductor field effect transistor and voltage stabilizing didoe are manufactured on the same integrated circuit (IC) chip in described step-down and voltage stabilizing circuit and the input voltage stabilizing circuit.
10. a kind of DC decompression pressurizer according to claim 7 is characterized in that: each metal-oxide-semiconductor field effect transistor and voltage stabilizing didoe are manufactured on the same integrated circuit (IC) chip in described step-down and voltage stabilizing circuit and the input voltage stabilizing circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200320121452 CN2672956Y (en) | 2003-12-29 | 2003-12-29 | DC dropping voltage stabilizer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200320121452 CN2672956Y (en) | 2003-12-29 | 2003-12-29 | DC dropping voltage stabilizer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2672956Y true CN2672956Y (en) | 2005-01-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200320121452 Expired - Lifetime CN2672956Y (en) | 2003-12-29 | 2003-12-29 | DC dropping voltage stabilizer |
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| CN (1) | CN2672956Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105021912A (en) * | 2014-04-29 | 2015-11-04 | 全汉企业股份有限公司 | Load circuit and load device for LED driver burn-in test |
| CN112393828A (en) * | 2020-10-26 | 2021-02-23 | 南京熊猫电子股份有限公司 | Piezoresistive force sensor signal amplification module |
| CN113726153A (en) * | 2021-08-16 | 2021-11-30 | 深圳中堃物联网科技有限公司 | Voltage intelligent regulation method for voltage stabilizing module |
-
2003
- 2003-12-29 CN CN 200320121452 patent/CN2672956Y/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105021912A (en) * | 2014-04-29 | 2015-11-04 | 全汉企业股份有限公司 | Load circuit and load device for LED driver burn-in test |
| CN112393828A (en) * | 2020-10-26 | 2021-02-23 | 南京熊猫电子股份有限公司 | Piezoresistive force sensor signal amplification module |
| CN113726153A (en) * | 2021-08-16 | 2021-11-30 | 深圳中堃物联网科技有限公司 | Voltage intelligent regulation method for voltage stabilizing module |
| CN113726153B (en) * | 2021-08-16 | 2024-03-12 | 深圳中堃物联网科技有限公司 | Intelligent voltage regulating method for voltage stabilizing module |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20131229 Granted publication date: 20050119 |