CN104837245B - A kind of LED drive chip and BUCK type LED drive circuit - Google Patents

A kind of LED drive chip and BUCK type LED drive circuit Download PDF

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Publication number
CN104837245B
CN104837245B CN201510222910.9A CN201510222910A CN104837245B CN 104837245 B CN104837245 B CN 104837245B CN 201510222910 A CN201510222910 A CN 201510222910A CN 104837245 B CN104837245 B CN 104837245B
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led drive
drive chip
voltage
comparator
reference voltage
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CN104837245A (en
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宋利军
许煌樟
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Microelectronics Co Ltd Of Shenzhen City First Stable
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Microelectronics Co Ltd Of Shenzhen City First Stable
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Abstract

The invention discloses a kind of LED drive chip and BUCK type LED drive circuit, wherein, LED drive chip comprises low pressure metal-oxide-semiconductor, high-voltage MOS pipe, internal electric source module, compares control module, driver module and current limliting module.Described LED drive chip compares the voltage of the first reference voltage, the second reference voltage and LED drive chip CS end by comparing control module, when the voltage of LED drive chip CS end is lower than the second reference voltage, control driver module by the conducting of low pressure metal-oxide-semiconductor; When the voltage of LED drive chip CS end is higher than the first reference voltage, controls driver module and low pressure metal-oxide-semiconductor is turned off; Thus achieve the break-make controlling LED drive chip VIN end and CS end according to the voltage of LED drive chip CS end, maintain internal power source voltage in high value without the need to VCC pin and external VCC electric capacity of voltage regulation, thus save circuit board space, reduce cost.

Description

A kind of LED drive chip and BUCK type LED drive circuit
Technical field
The present invention relates to field of LED drive, particularly a kind of LED drive chip and BUCK type LED drive circuit.
Background technology
Along with the maturation gradually of LED Driving technique, under the prerequisite of guaranteed performance, pursuit low cost and peripheral cell less and less become the common recognition of industry.
Fig. 1 gives a kind of BUCK type LED drive circuit of prior art, and described LED drive circuit comprises rectifier bridge 10, electric capacity of voltage regulation 20, existing driving chip 30 and output stage 40.Described existing driving chip 30 has 4 pins, is VIN pin, VCC pin, CS pin and VSS pin respectively.
Adopt the BUCK type LED drive scheme that this existing driving chip 30 is formed, except existing driving chip 30 needs extra VCC pin, also need peripheral VCC electric capacity of voltage regulation 20.Described VCC electric capacity of voltage regulation 20 capacitance is in general very large, plays the effect of stabilized driving chip power VCC.Therefore described VCC electric capacity of voltage regulation 20 both Expenses Cost also take circuit board space.
Thus prior art need to improve.
Summary of the invention
In view of above-mentioned the deficiencies in the prior art part, the object of the present invention is to provide a kind of LED drive chip and BUCK type LED drive circuit, and maintain internal power source voltage without the need to VCC pin and external VCC electric capacity of voltage regulation.
In order to achieve the above object, this invention takes following technical scheme:
A kind of LED drive chip, comprises low pressure metal-oxide-semiconductor, high-voltage MOS pipe, internal electric source module, compares control module, driver module and current limliting module;
Described internal electric source module is for comparing control module and driver module is powered; The described voltage comparing control module and compare the first reference voltage, the second reference voltage and LED drive chip CS end, when the voltage of LED drive chip CS end is lower than the second reference voltage, control driver module by the conducting of low pressure metal-oxide-semiconductor, the VIN end of LED drive chip and CS hold conducting; The described control module that compares, when the voltage that LED drive chip CS holds is higher than the first reference voltage, controls driver module and is turned off by low pressure metal-oxide-semiconductor, and VIN end and the CS end of LED drive chip disconnect.
Described LED drive chip, wherein, the described control module that compares comprises the first comparator, the second comparator;
Band-gap reference, exports to resitstance voltage divider for generation of reference voltage;
Resitstance voltage divider, the reference voltage for being produced by band-gap reference is divided into the first reference voltage and the second reference voltage, and the first reference voltage is exported to the first comparator, and the second reference voltage is exported to the second comparator;
Logical block, for receiving the level signal of the first comparator and the output of the second comparator, when the level signal that the first comparator and the second comparator export is high level, controls driver module by the conducting of low pressure metal-oxide-semiconductor; When the level signal that the first comparator and the second comparator export is low level, controls driver module and low pressure metal-oxide-semiconductor is turned off;
The input of described band-gap reference be compare control module power input, connect the power input of the first comparator and the power input of the second comparator, the output of described band-gap reference connects the VSS end of LED drive chip by resitstance voltage divider, first output of described resitstance voltage divider connects the in-phase input end of the first comparator, and the second output of described resitstance voltage divider connects the in-phase input end of the second comparator; The reverse input end of described first comparator and the reverse input end of the second comparator be compare control module input, be connected LED drive chip CS end, the output of described first comparator connects the first input end of logical block, the output of described second comparator connects the second input of logical block, and the output of described logical block is compare the output of control module, the input of connection driver module.
Described LED drive chip, wherein, described current limliting module comprises current-limiting resistance.
Described LED drive chip, wherein, described low pressure metal-oxide-semiconductor and high-voltage MOS pipe are N-channel MOS pipe.
Described LED drive chip, wherein, described internal electric source module comprises low voltage difference high-speed linear pressurizer.
Described LED drive chip, wherein, described first reference voltage is 0.5V, and described second reference voltage is 67mV.
A kind of BUCK type LED drive circuit, comprises LED drive chip as above.
Described BUCK type LED drive circuit, wherein, described BUCK type LED drive circuit also comprises: rectifier bridge, the first electric capacity, the first diode, the first resistance, inductance and LED group; External communication electricity connects one end of the first electric capacity and the VIN end of LED drive chip by rectifier bridge, the other end ground connection of described first electric capacity; The CS of described LED drive chip holds the negative pole of connection first diode and one end of the first resistance, the plus earth of described first diode, the other end of described first resistance connects the VSS end of LED drive chip and one end of inductance, and the other end of described inductance is by LED group ground connection.
Compared to prior art, LED drive chip provided by the invention and BUCK type LED drive circuit, the voltage of the first reference voltage, the second reference voltage and LED drive chip CS end is compared by comparing control module, when the voltage of LED drive chip CS end is lower than the second reference voltage, control driver module by the conducting of low pressure metal-oxide-semiconductor; When the voltage of LED drive chip CS end is higher than the first reference voltage, controls driver module and low pressure metal-oxide-semiconductor is turned off; Thus achieve the break-make controlling LED drive chip VIN end and CS end according to the voltage of LED drive chip CS end, and maintain internal power source voltage in high value without the need to VCC pin and external VCC electric capacity of voltage regulation, thus save circuit board space, reduce cost.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of existing BUCK type LED drive circuit.
Fig. 2 is the circuit diagram of LED drive chip provided by the invention.
Fig. 3 is the circuit diagram of BUCK type LED drive circuit provided by the invention.
Embodiment
The invention provides a kind of LED drive chip and BUCK type LED drive circuit, the voltage of the first reference voltage, the second reference voltage and LED drive chip CS end is compared by comparing control module, and then control the break-make of low pressure metal-oxide-semiconductor, namely, the break-make of LED drive chip VIN end and CS end is controlled according to the voltage of LED drive chip CS end, maintain internal power source voltage in high value without the need to VCC pin and external VCC electric capacity of voltage regulation, thus save circuit board space, reduce cost.
For making object of the present invention, technical scheme and effect clearly, clearly, developing simultaneously referring to accompanying drawing, the present invention is described in more detail for embodiment.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Refer to Fig. 2, LED drive chip provided by the invention, comprise high-voltage MOS pipe M1, low pressure metal-oxide-semiconductor M2, internal electric source module 60, compare control module 70, current limliting module 80 and driver module 90.Described high-voltage MOS pipe M1 is used for bearing high input voltage, protection low pressure metal-oxide-semiconductor M2.
Described internal electric source module 60 is for comparing control module 70 and driver module 90 is powered; The described voltage comparing control module 70 and compare the first reference voltage Vref 1, second reference voltage Vref 2 and LED drive chip CS end, when the voltage of LED drive chip CS end is lower than the second reference voltage Vref 2, control driver module 90 by low pressure metal-oxide-semiconductor M2 conducting, the VIN end of LED drive chip and CS hold conducting; The described control module 70 that compares, when the voltage that LED drive chip CS holds is higher than the first reference voltage Vref 1, controls driver module 90 and is turned off by low pressure metal-oxide-semiconductor M2, and VIN end and the CS end of LED drive chip disconnect.
In other words, described internal electric source module 60, for providing working power for described LED drive chip.Wherein, described internal electric source module 60 comprises low voltage difference high-speed linear pressurizer.
Describedly compare control module 70, for comparing the voltage of the first reference voltage Vref 1, second reference voltage Vref 2 and LED drive chip CS end, when the voltage of LED drive chip CS end is lower than the second reference voltage Vref 2, control driver module 90 by low pressure metal-oxide-semiconductor M2 conducting; When the voltage of LED drive chip CS end is higher than the first reference voltage Vref 1, controls driver module 90 and low pressure metal-oxide-semiconductor M2 is turned off.Wherein, described first reference voltage Vref 1 and the second reference voltage Vref 2 can set as required, and preferably, described first reference voltage is 0.5V, and described second reference voltage is less than 100mV, and in the present embodiment, described second reference voltage is 67mV.
Driver module 90, for driving low pressure metal-oxide-semiconductor M2 conducting;
Current limliting module 80, for current limliting.Described current limliting module 80 comprises current-limiting resistance R.
The VIN end of described LED drive chip connects the input of internal electric source module 60 and the drain electrode of high-voltage MOS pipe M2, first output of described internal electric source module 60 connects the power input comparing control module 70, the described input comparing control module 70 connects the CS end of LED drive chip, the described output comparing control module 70 connects the input of driver module 90, the output of described driver module 90 connects the grid level of low pressure metal-oxide-semiconductor M2, and the source electrode of described low pressure metal-oxide-semiconductor M2 connects the CS end of LED drive chip; Second output of described internal electric source module 60 is connected the power input of driver module 90, is also connected the grid level of high-voltage MOS pipe M1 by current limliting module 80, and the source electrode of described high-voltage MOS pipe M1 connects the drain electrode of low pressure metal-oxide-semiconductor M2.
LED drive chip provided by the invention, the voltage of the first reference voltage, the second reference voltage and LED drive chip CS end is compared by comparing control module, when the voltage of LED drive chip CS end is lower than the second reference voltage, control driver module by the conducting of low pressure metal-oxide-semiconductor; When the voltage of LED drive chip CS end is higher than the first reference voltage, controls driver module and low pressure metal-oxide-semiconductor is turned off; Thus achieve the break-make controlling LED drive chip VIN end and CS end according to the voltage of LED drive chip CS end, and maintain internal power source voltage in high value without the need to VCC pin and external VCC electric capacity of voltage regulation, thus save circuit board space, reduce cost.
Please continue to refer to Fig. 2, the described control module 70 that compares comprises the first comparator Q1, the second comparator Q2, band-gap reference 710, resitstance voltage divider 720 and logical block 730.
Described band-gap reference 710, exports to resitstance voltage divider 720 for generation of reference voltage.Preferably, described reference voltage is 1.2V.
Described resitstance voltage divider 720, reference voltage for being produced by band-gap reference 710 is divided into the first reference voltage Vref 1 and the second reference voltage Vref 2, and the first reference voltage Vref 1 is exported to the first comparator Q1, the second reference voltage Vref 2 is exported to the second comparator Q2.
Described logical block 730, for receiving the level signal that the first comparator Q1 and the second comparator Q2 exports, when the level signal that the first comparator Q1 and the second comparator Q2 exports is high level, controls driver module 90 by low pressure metal-oxide-semiconductor M2 conducting; When the level signal that the first comparator Q1 and the second comparator Q2 exports is low level, controls driver module 90 and low pressure metal-oxide-semiconductor M2 is turned off.Described logical block 730, also for exporting high level, the second comparator Q2 output low level at the first comparator Q1, controlling driver module 90 and maintaining the current on off operating mode of low pressure metal-oxide-semiconductor M2.The input of described band-gap reference 710 be compare control module 70 power input, connect the power input of the first comparator Q1 and the power input of the second comparator Q2, the output of described band-gap reference 710 connects the VSS end of LED drive chip by resitstance voltage divider 720, first output 1 ' of described resitstance voltage divider 720 connects the in-phase input end of the first comparator Q1, and the second output 2 ' of described resitstance voltage divider 720 connects the in-phase input end of the second comparator Q2; Reverse input end and the reverse input end of the second comparator Q2 of described first comparator Q1 be compare control module 70 input, be connected LED drive chip CS end, the output of described first comparator Q1 connects the first input end of logical block 730, the output of described second comparator Q2 connects the second input of logical block 730, and the output of described logical block 730 is compare the output of control module 70, the input of connection driver module 90.Wherein, described low pressure metal-oxide-semiconductor M2 and high-voltage MOS pipe M1 is N-channel MOS pipe.
See also Fig. 3, being convenient to for making the operation principle of LED drive chip provided by the invention understand, described LED drive chip being inserted in a kind of BUCK type LED drive circuit.Described internal electric source module 60 provides working power for other modules of LED drive chip inside.Bearing interest benchmark 710 output reference voltage is to resitstance voltage divider 720, this reference voltage dividing potential drop is produced the first reference voltage Vref 1 and the second reference voltage Vref 2 by resitstance voltage divider 720, wherein the first reference voltage Vref 1 is 0.5V, second reference voltage Vref 2 is close to zero volt, and they are input to the in-phase input end of the first comparator Q1 and the second comparator Q2 respectively; The CS end of the anti-phase input termination LED drive chip of the first comparator Q1 and the second comparator Q2, CS end sampling inductive current.When the voltage of CS end is lower than the second reference voltage Vref 2, the first comparator Q1 and the second comparator Q2 exports as high, and low pressure metal-oxide-semiconductor M2 opens, and the electric current of inductance L 1 linearly rises; When the voltage of CS end is higher than the second reference voltage Vref 2 and lower than the first reference voltage Vref 1, the first comparator Q1 exports as height and the second comparator Q2 exports as low, and low pressure metal-oxide-semiconductor M2 is still in conducting state, and the electric current of inductance L 1 keeps linear rising; When the voltage of CS end is higher than the first reference voltage Vref 1, first comparator Q1 and the second comparator Q2 exports as low, low pressure metal-oxide-semiconductor M2 is turned off, the electric current of inductance L 1 starts linear decline until when the voltage of CS end is lower than the second reference voltage Vref 2, inductance L 1 drops to close to 0, this low pressure metal-oxide-semiconductor M2 is opened again, makes inductive current become rising from decline.So move in circles, achieve the similar critical conduction mode of operation of inductance L 1 electric current.
The grid of described LED drive chip internal high pressure metal-oxide-semiconductor M1 passes through current-limiting resistance R Direct driver by the second output 2 of internal electric source module 60.After low pressure metal-oxide-semiconductor M2 opens, the pressure reduction between the VIN end of driving chip and VSS hold equals the drain-source voltage VDS1 of high-voltage MOS pipe M1 and the drain-source voltage VDS2 sum of low pressure metal-oxide-semiconductor M2, and the drain-source voltage VDS2 due to low pressure metal-oxide-semiconductor M2 is very little can be ignored; When the firm conducting of low pressure metal-oxide-semiconductor M2, because inductive current is very little, the drain-source voltage VDS1 pressure drop of high-voltage MOS pipe M1 is very little, cause the VIN of driving chip hold and VSS hold between pressure drop very little, now internal electric source module 60 output voltage is very low, is in abnormal operating state; But along with the rising gradually of inductive current, the drain-source voltage VDS1 of high-voltage MOS pipe M1 increases gradually, mean the VIN end of driving chip and VSS hold between pressure reduction raise gradually, now internal electric source module 60(high speed LDO) also stable output voltage can be set up very soon.Because inductive current rises after low pressure metal-oxide-semiconductor M2 conducting, internal electric source module 60 can return to high value rapidly, thus can meet the inner each module of driving chip and normally work.That is, bearing interest benchmark 710, resitstance voltage divider 720, first comparator Q1, the second comparator Q2, NAND gate Q3, driver module 90 normally work, and inerrancy triggering signal produces.Therefore, adopt the framework of LED drive chip provided by the invention, maintain internal power source voltage without the need to VCC pin and external capacitor and be stabilized in high value.Visible, VCC pin and the external electric capacity of voltage regulation 20 of driving chip shown in Fig. 1 can save, and thus, not only save the area of pcb board, also reduce cost.
Refer to Fig. 3, based on the LED drive chip described in a upper embodiment, the present invention also provides a kind of BUCK type LED drive circuit, comprise the LED drive chip U1 as above described in an embodiment, also comprise rectifier bridge 100, first electric capacity C3, the first diode D1, the first resistance R1, inductance L 1 and LED group 200.
External communication electricity AC connects one end of the first electric capacity C3 and the VIN end of LED drive chip U1 by rectifier bridge 100, the other end ground connection of described first electric capacity C3; The CS of described LED drive chip U1 holds the negative pole of connection first diode D1 and one end of the first resistance R1, the plus earth of described first diode D1, the other end of described first resistance R1 connects the VSS end of LED drive chip U1 and one end of inductance L 1, and the other end of described inductance L 1 is by LED group 200 ground connection.Described LED group 200 is made up of some LED.Described rectifier bridge 100 comprises the second diode D2, the 3rd diode D3, the 4th diode D4 and the 5th diode D5, one end of external communication electricity AC connects the positive pole of the second diode D2 and the negative pole of the 4th diode D4, the other end of external communication electricity AC connects the positive pole of the 3rd diode D3 and the negative pole of the 5th diode D5,4th diode D4 and the 5th diode D5 ground connection, the negative pole of the second diode D2 is connected one end of the first electric capacity C3 and the VIN end of LED drive chip U1 with the negative pole of the 3rd diode D3.
Because the operation principle of described BUCK type LED drive circuit and feature elaborate in a upper embodiment, do not repeat them here.
Be understandable that, for those of ordinary skills, can be equal to according to technical scheme of the present invention and inventive concept thereof and replace or change, and all these change or replace the protection range that all should belong to the claim appended by the present invention.

Claims (8)

1. a LED drive chip, is characterized in that, comprises low pressure metal-oxide-semiconductor, high-voltage MOS pipe, internal electric source module, compares control module, driver module and current limliting module;
Described internal electric source module is for comparing control module and driver module is powered; The described voltage comparing control module and compare the first reference voltage, the second reference voltage and LED drive chip CS end, when the voltage of LED drive chip CS end is lower than the second reference voltage, control driver module by the conducting of low pressure metal-oxide-semiconductor, the VIN end of LED drive chip and CS hold conducting; The described control module that compares, when the voltage that LED drive chip CS holds is higher than the first reference voltage, controls driver module and is turned off by low pressure metal-oxide-semiconductor, and VIN end and the CS end of LED drive chip disconnect; The described control module that compares, when the voltage that LED drive chip CS holds is higher than the second reference voltage and lower than the first reference voltage, controls driver module and maintains the current on off operating mode of low pressure metal-oxide-semiconductor.
2. LED drive chip according to claim 1, is characterized in that, the described control module that compares comprises the first comparator, the second comparator;
Band-gap reference, exports to resitstance voltage divider for generation of reference voltage;
Resitstance voltage divider, the reference voltage for being produced by band-gap reference is divided into the first reference voltage and the second reference voltage, and the first reference voltage is exported to the first comparator, and the second reference voltage is exported to the second comparator;
Logical block, for receiving the level signal of the first comparator and the output of the second comparator, when the level signal that the first comparator and the second comparator export is high level, controls driver module by the conducting of low pressure metal-oxide-semiconductor; When the level signal that the first comparator and the second comparator export is low level, controls driver module and low pressure metal-oxide-semiconductor is turned off;
The input of described band-gap reference be compare control module power input, connect the power input of the first comparator and the power input of the second comparator, the output of described band-gap reference connects the VSS end of LED drive chip by resitstance voltage divider, first output of described resitstance voltage divider connects the in-phase input end of the first comparator, and the second output of described resitstance voltage divider connects the in-phase input end of the second comparator; The reverse input end of described first comparator and the reverse input end of the second comparator be compare control module input, be connected LED drive chip CS end, the output of described first comparator connects the first input end of logical block, the output of described second comparator connects the second input of logical block, and the output of described logical block is compare the output of control module, the input of connection driver module.
3. LED drive chip according to claim 2, is characterized in that, described current limliting module comprises current-limiting resistance.
4. LED drive chip according to claim 3, is characterized in that, described low pressure metal-oxide-semiconductor and high-voltage MOS pipe are N-channel MOS pipe.
5. LED drive chip according to claim 4, is characterized in that, described internal electric source module comprises low voltage difference high-speed linear pressurizer.
6. LED drive chip according to claim 1, is characterized in that, described first reference voltage is 0.5V, and described second reference voltage is 67mV.
7. a BUCK type LED drive circuit, is characterized in that, comprises the LED drive chip as described in claim 1-6.
8. BUCK type LED drive circuit according to claim 7, is characterized in that, described BUCK type LED drive circuit also comprises: rectifier bridge, the first electric capacity, the first diode, the first resistance, inductance and LED group; External communication electricity connects one end of the first electric capacity and the VIN end of LED drive chip by rectifier bridge, the other end ground connection of described first electric capacity; The CS of described LED drive chip holds the negative pole of connection first diode and one end of the first resistance, the plus earth of described first diode, the other end of described first resistance connects the VSS end of LED drive chip and one end of inductance, and the other end of described inductance is by LED group ground connection.
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CN109089351B (en) * 2018-10-18 2024-08-02 上海灿瑞科技股份有限公司 LED driving power supply chip
CN110190733A (en) * 2019-04-16 2019-08-30 杰华特微电子(杭州)有限公司 The method of supplying power to and dual chip power circuit of dual chip power circuit
CN112771780B (en) * 2020-06-18 2022-04-08 华为技术有限公司 Vehicle-mounted driving circuit, vehicle-mounted driving chip, vehicle-mounted driving device and electronic equipment

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