CN101471601A - Electric charge assist pump for adding power efficiency and output voltage - Google Patents
Electric charge assist pump for adding power efficiency and output voltage Download PDFInfo
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- CN101471601A CN101471601A CNA2007103020967A CN200710302096A CN101471601A CN 101471601 A CN101471601 A CN 101471601A CN A2007103020967 A CNA2007103020967 A CN A2007103020967A CN 200710302096 A CN200710302096 A CN 200710302096A CN 101471601 A CN101471601 A CN 101471601A
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Abstract
The invention relate to a charge pump for increasing power efficiency and output voltage. The charge pump is coupled with a first end of a pump capacitor through a switch module; a first switch is coupled between a second end of the pump capacitor and a power supply; a first buffer receives a first input signal to generate a control signal for controlling the turning-on or the turning-off of the first switch; the level of the first input signal ranges between a first voltage and a second voltage; the first voltage and the second voltage are associated with the cross voltage of the first switch; the cross voltage of the first switch is a plurality of times of the power supply, and the times are greater than 1. Therefore, the charge pump can reduce the impedance value of a transfer switch and further enhance the power efficiency of the charge pump, the output voltage level and the area efficiency of an integrated circuit.
Description
Technical field
The invention relates to a kind of charge pump, it refers to a kind of charge pump that increases power efficiency and output voltage especially.
Background technology
Science and technology is more and more progressive now, make the common people on the living conditions also more and more for convenient, no matter in work or in life ﹠ amusement, all be unable to do without electronic product gradually, in view of this dealer researches and develops many products and makes the common people can enjoy the convenience that electronic product brings now.
Moreover, because electronic product function now from strength to strength, bear down menacingly as the third generation intelligent (3G) mobile phone, dealer's fourth of the twelve Earthly Branches foot invariably develops new function with all strength and is attached on the mobile phone, such as music player (MP3), digital camera, global positioning system (GPS), television system, broadcast system, image news in brief, video phone, credit card function ... .. etc., when function the more the time, just relatively higher to the quality and quantity of power supply requirement.Yet mobile phone develops into consumable products again gradually on market, substituted is quite high, and the product life cycle is short.If in the shortest time, do not develop the product that meets consumer wants most, then make a profit and to be compressed.Therefore the engineer must be familiar with the pluses and minuses and the occupation mode of various power management chips (IC), could create maximum profit in the shortest time.
From the above, the power management of general now portable apparatus is that the charge pump based on switch-capacitor is one of a common technology, because of having lower electromagnetic interference (EMI/EMC), it is widely used in various electronic products, especially hand-held electronic product, for example personal digital assistant and mobile phone.Yet along with the development of hand-held electronic product, various functions are integrated into single wafer (SOC) successively, and the voltage level of the supply power that wafer is inner required is variation thereupon also.The battery of hand-held electronic product only provides the single voltage Vsup about 2.7V usually, but in response to the demand on the product function, and needing by the voltage transitions of charge pump about with this 2.7V is various voltages.Wherein the voltage transitions with two multiplication of voltages is the most normal use with the voltage transitions of bearing a multiplication of voltage.See also Figure 1A and Figure 1B, be the circuit diagram and the sequential chart thereof of the charge pump of two multiplication of voltages of known techniques.As shown in the figure, it comprises one first switch 10 ', group's Pu electric capacity 11 ', second switch 12 ', one the 3rd switch 13 ', one the 4th switch 14 ', output capacitance 15 ', one first buffer 20 ', one second buffer 21 ', the 3rd buffer 22 ' and one the 4th buffer 23 '.First switch 10 ' couples a supply power VDD and one first end helping Pu electric capacity 11 ', one second end of group's Pu electric capacity 11 ' is coupled to second switch 12 ' and the 3rd switch 13 ', second switch 12 ' is coupled between second end of supply power VDD and group's Pu electric capacity 11 ', the 3rd switch 13 ' is coupled between second end and earth terminal of group's Pu electric capacity 11 ', the 4th switch 14 ' is coupled to first end of group's Pu electric capacity 11 ' and an end of output capacitance 15 ', output capacitance 15 ' is coupled between the 4th switch 14 ' and the earth terminal, buffer 20 ', 21 ', 22 ', 23 ' couples first switch 10 ' respectively, second switch 12 ', the 3rd switch 13 ' and the 4th switch 14 ' are with the usefulness as control switch.The about 2* supply power of the two multiplication of voltages VDD of charge pump, wherein supply power VDD is about about 2.7V.
If considering under the permission situation of processing procedure reliability, the metal-oxide-semiconductor (MOS) that processing procedure provided (MOS) element that uses 5V usually as the electric capacity diverter switch to realize this charge pump.It is as the gate-source voltage cross-pressure (V of the MOS element of electric capacity diverter switch
GS) only be Vsup.The known MOS switch of working as is let out source voltage cross-pressure (V
DS) when very little, i.e. V
DS＜＜2 (V
GS-Vth), the resistance R during the MOS switch conduction
MOSWith gate-source voltage cross-pressure (V
GS) the pass be:
R
MOS∝ [(W/L) * (V
GS-Vth)]
-1, work as V
DS＜＜2 (V
GS-Vth)
Wherein W is the grid channel width of MOS switch, and L is the grid passage length of MOS switch, and Vth is the critical voltage of MOS switch.Shown in Figure 1B, input and output signal oscillogram for reverse buffer, under the prerequisite that is without loss of generality in simplification, the critical voltage of supposing 5V PMOS is-Vthp, the critical voltage of 5V NMOS is Vthn, learn that by above-mentioned formula the resistance when first switch 10 ', second switch 12 ', the 3rd switch 13 ' and the 14 ' conducting of the 4th switch is respectively:
R
MOS，10’∝[(W
10’1/L
10’)*(|V
GS，10’|-Vthp)]
-1
＝[(W
10’/L
10’)*(VDD-Vthp)]
-1
R
MOS，12’∝[(W
12’/L
12’)*(|V
GS，12’|-Vthp)]
-1
＝[(W
12’/L
123’)*(VDD-Vthp)]
-1
R
MOS，13’∝[(W
13’/L
13’)*(V
GS，13’-Vthn)]
-1
＝[(W
13’/L
13’)*(VDD-Vthn)]
-1
R
MOS，14’∝[(W
14’/L
14’)*(|V
GS，14’|-Vthp)]
-1
＝[(W
14’/L
14’)*(Outputl-Vthp)]
-1
＝[(W
14’/L
14’)*(AVDD-Vthp)]
-1
＝[(W
14’/L
14’)*(2*VDD-Vthp)]
-1
By above-mentioned formula as can be known, resistance when first switch 10 ', second switch 12 ' and the 13 ' conducting of the 3rd switch with (VDD-Vth) be inversely proportional to, so with the 4th switch in comparison, resistance when switch conduction is bigger, therefore, need expend more power and have relatively poor output voltage position standard, and when integrated circuit is made, need expend bigger circuit area.
In like manner, see also Fig. 2 A and Fig. 2 B, be the charge pump and the sequential chart thereof of bearing a multiplication of voltage of known techniques.As shown in the figure, the difference of itself and Figure 1A is that one the 5th switch 30 ' is coupled to earth terminal, one the 5th buffer 32 ' couples the 5th switch 30 ' and the input signal scope that receives is that supply power VDD is to negative one times of supply power VCL, a hex buffer 34 ' is coupled to one the 6th switch 36 ', and the input signal scope that receives be supply power VDD to negative one times of supply power VCL, its 5th switch 30 ', a minion are closed 38 ' and octavo pass 39 ' and are had the problem of above-mentioned Figure 1A.
Therefore, how to propose a kind of novel charge pump that increases power efficiency and output voltage at the problems referred to above, it uses the gate-source voltage cross-pressure (V of 2*Vsup as the MOS element of electric capacity diverter switch
GS), the resistance during with effective reduction MOS switch conduction, and promote the accurate area efficiency with integrated circuit in power efficiency, the output voltage position of charge pump.
Summary of the invention
One of purpose of the present invention, be to provide a kind of charge pump that increases power efficiency and output voltage, it is to increase the cross-pressure of switch, with the resistance value of reduction switch, and then the area efficiency of the power efficiency of lifting charge pump, output voltage position standard and integrated circuit.
One of purpose of the present invention, be to provide a kind of charge pump that increases power efficiency and output voltage, it is that the dynamic electric voltage between two charge pumps is as the cross-pressure that increases switch in the circuit, to reduce the resistance value of switch, and need not use extra power circuit, with the saving circuit area, and then save cost.
Purpose of the present invention and its technical problem of solution are achieved through the following technical solutions.The increase efficient that the present invention proposes and the charge pump of output voltage, it comprises group's Pu electric capacity, a switch module, first switch, first buffer, a diverter switch and an output capacitance.The switch module couples one first end of group's Pu electric capacity, first switch is coupled between one second end and power supply of group's Pu electric capacity, first buffer receives one first input signal and produces a controlling signal, to control first switch conduction or to end, the accurate scope in position of first input signal is between one first voltage to one, second voltage, wherein first voltage and second voltage are associated with the cross-pressure of first switch, the cross-pressure multiple of first switch is in power supply, and this multiple is greater than 1, diverter switch couples first switch and group's Pu electric capacity, to switch Pu electric capacity output group of group Pu voltage, output capacitance couples second switch and group's Pu electric capacity, with stable and output group Pu voltage.
Aforesaid charge pump, wherein this switch module more comprises: a second switch couples this first end of this power supply and this group's Pu electric capacity; One second buffer couples this second switch, and receives one second input signal, and to control this second switch conducting or to end, the accurate scope in position of this second input signal is that this power supply is to this power supply of bearing one times.
Aforesaid charge pump, wherein this switch module more comprises: one the 3rd switch couples this first end of an earth terminal and this group's Pu electric capacity; One the 3rd buffer couples the 3rd switch, and receives one the 3rd input signal, and to control the 3rd switch conduction or to end, the accurate scope in position of the 3rd input signal is that two times of these power supplys are to no-voltage.
Aforesaid charge pump, wherein this second buffer is an inverter buffer.
Aforesaid charge pump, wherein second switch is a metal-oxide half field effect transistor.
Aforesaid charge pump, wherein the 3rd buffer is an inverter buffer.
Aforesaid charge pump, wherein the 3rd switch is a metal-oxide half field effect transistor.
Aforesaid charge pump, wherein this first voltage is group's Pu voltage of this group's Pu electric capacity, this group's Pu voltage that this second voltage is another charge pump.
Aforesaid charge pump, wherein it more comprises: a driving buffer, couple this diverter switch, and receive a switching signal, drive signal and produce one, to control this diverter switch conducting or to end.
Aforesaid charge pump, wherein this driving buffer is an inverter buffer.
Aforesaid charge pump, wherein this first switch is a metal-oxide half field effect transistor.
Purpose of the present invention and its technical problem of solution are also to be achieved through the following technical solutions.The present invention proposes a kind of charge pump that increases power efficiency and output voltage, and it comprises: group's Pu electric capacity; A switch module couples one first end of this group's Pu electric capacity; One first switch is coupled between one second end and earth terminal of this group's Pu electric capacity; One first buffer, receive one first input signal, produce a controlling signal, to control this first switch conduction or to end, the accurate scope in position of this first input signal is between one first voltage to one, second voltage, this first voltage and this second voltage are associated with the cross-pressure of this first switch, and the cross-pressure multiple of this first switch is in this power supply, and this multiple is greater than 1; A diverter switch couples this first switch and this group's Pu electric capacity, exports this group's Pu voltage to switch this group's Pu electric capacity; And an output capacitance, couple this second switch and this group's Pu electric capacity, with stable and export this group's Pu voltage.
Aforesaid charge pump, wherein this switch module more comprises: a second switch couples this first end of this power supply and this group's Pu electric capacity; One second buffer couples this second switch, and receives one second input signal, and to control this second switch conducting or to end, the accurate scope in position of this second input signal is that this power supply is to this power supply of bearing one times.
Aforesaid charge pump, wherein this switch module more comprises: one the 3rd switch couples this first end of this earth terminal and this group's Pu electric capacity; One the 3rd buffer couples the 3rd switch, and receives one the 3rd input signal, and controlling the 3rd switch conduction or to end, the accurate scope in position of the 3rd input signal is that this power supply of two times is to no-voltage.
Aforesaid charge pump, wherein this second buffer is an inverter buffer.
Aforesaid charge pump, wherein second switch is a metal-oxide half field effect transistor.
Aforesaid charge pump, wherein the 3rd buffer is an inverter buffer.
Aforesaid charge pump, wherein the 3rd switch is a metal-oxide half field effect transistor.
Aforesaid charge pump, wherein this first voltage is group's Pu voltage of this group's Pu electric capacity; This group's Pu voltage that this second voltage is another charge pump.
Aforesaid charge pump, wherein it more comprises: a driving buffer, couple this diverter switch, and receive a switching signal, drive signal and produce one, to control this diverter switch conducting or to end.
Aforesaid charge pump, wherein this driving buffer is an inverter buffer.
Aforesaid charge pump, wherein this first switch is a metal-oxide half field effect transistor.
Moreover, second voltage in the first input signal scope that this first switch receives is group's Pu voltage of another charge pump, promptly increase the cross-pressure of switch by the dynamic electric voltage of circuit inside generation, with the resistance value of reduction switch, and then the area efficiency of the power efficiency of lifting charge pump, output voltage position standard and integrated circuit.
The invention has the beneficial effects as follows: the increase power efficiency that the present invention proposes and the charge pump of output voltage, be that the voltage level scope of first input signal by adjusting first switch increases the cross-pressure between the grid source electrode of first switch, and then reduce the impedance of first switch, the area efficiency of and integrated circuit accurate with the power efficiency, the output voltage position that promote charge pump.Moreover, by two charge pumps in the circuit, with as the voltage level scope of input signal each other, and need not additionally use power circuit with the cross-pressure between the grid source electrode that increases switch, saving circuit area, and then save cost.
Description of drawings
Figure 1A is the circuit diagram that the twice of known techniques is pressed charge pump;
Figure 1B is the sequential chart that the twice of known techniques is pressed charge pump;
Fig. 2 A is the circuit diagram of a negative multiplication of voltage charge pump of known techniques;
Fig. 2 B is the sequential chart of a negative multiplication of voltage charge pump of known techniques;
Fig. 3 is the circuit diagram of a preferred embodiment of the present invention;
Fig. 4 is the circuit diagram of another preferred embodiment of the present invention; And
Fig. 5 is the sequential chart of a preferred embodiment of the present invention.
The figure number explanation:
10 ' first switch, 11 ' group's Pu electric capacity
12 ' second switch 13 ' the 3rd switch
14 ' the 4th switch, 15 ' output capacitance
20 ' first buffer, 21 ' second buffer
22 ' the 3rd buffer 23 ' the 4th buffer
30 ' the 5th switch 32 ' the 5th buffer
34 ' the hex buffer 36 ' the 6th switch
38 ' the minion is closed the 39 ' octavo and is closed
10 first help Pu electric capacity 12 first switch modules
120 second switches, 122 second buffers
124 the 3rd switches 126 the 3rd buffer
14 first switches, 16 first buffers
18 first diverter switches, 20 first output capacitances
22 first drive buffer 30 second helps Pu electric capacity
32 second switch modules 320 the 5th switch
322 the 5th buffers 324 the 6th switch
326 hex buffers 34 the 4th switch
36 the 4th buffers, 38 second diverter switches
40 second output capacitances 42 second drive buffer
Embodiment
Further understand and understanding for the juror is had architectural feature of the present invention and the effect reached, sincerely help with preferred embodiment and cooperate detailed explanation, illustrate as after:
See also Fig. 3, be the circuit diagram of a preferred embodiment of the present invention.As shown in the figure, the charge pump of increase power efficiency of the present invention and output voltage comprises that one first is helped Pu electric capacity 10, one first switch module 12, one first switch 14, one first buffer 16, first diverter switch 18 and one first output capacitance 20.The first switch module 12 couples first one first end helping Pu electric capacity 10, first switch 14 is coupled to first and helps between one second end and a power vd D of Pu electric capacity 10, first buffer 16 receives one first input signal and produces a controlling signal, to control 14 conductings of first switch or to end, wherein the accurate scope in position of first input signal is between one first voltage to one, second voltage, first voltage and second voltage are associated with the cross-pressure of first switch 14, the cross-pressure multiple of first switch 14 is in power supply, and multiple is greater than 1, wherein, first switch 14 is a metal-oxide half field effect transistor (Metal OxideSemiconductor Field Effective Transistor, MOSFET), and first buffer 16 be an inverter buffer.Owing to knownly let out source voltage cross-pressure (V when the MOS switch
DS) when very little, i.e. V
DS＜＜2 (V
GS-Vth), the resistance value R during the MOS switch conduction
MOSWith gate-source voltage cross-pressure (V
GS) the pass be:
R
MOS∝ [(W/L) * (V
GS-Vth)]
-1, work as V
DS＜＜2 (V
GS-Vth)
Wherein W is the grid channel width of MOS switch, and L is the grid passage length of MOS switch, and Vth is the critical voltage of MOS switch.As from the foregoing, as can be known by the cross-pressure (V between the grid source electrode that promotes first switch 14
GS), and the resistance value of first switch 14 can be reduced, and then the accurate area efficiency with circuit in power efficiency, the output voltage position of charge pump can be promoted.Moreover, owing to can't only use a kind of charge pump at the power management of now portable apparatus,
So, the present invention helps the Pu voltage C1P of group of Pu electric capacity 10 generations and the second Pu voltage C2P of group that helps Pu electric capacity 30 to produce of the charge pump of a negative multiplication of voltage by first, with first voltage and second voltage (as shown in Figure 5) as the signal level scope of first input signal, so, increase the cross-pressure of first switch 14, promptly increase the voltage between the grid source electrode of first switch 14, the resistance value of first switch 14 is descended, its formula is as follows:
R
MOS，14∝[(W
14/L
14)*(|V
GS，14|-Vthp)]
-1
＝[(W
14/L
14)*(VDD-VCL-Vthp)]
-1
＝[(W
14/L
14)*(2*VDD-Vthp)]
-1
By above-mentioned formula as can be known, the cross-pressure of first switch 10 ' in the charge pump of two multiplication of voltages of the voltage ratio Figure 1A between the grid source electrode of first switch 14 has increased by one times of voltage, make the impedance that reduces by first switch 14, and promote the power output efficient of charge pump of the present invention, the position of output voltage is accurate, and reduces the area efficiency of circuit area and then increase integrated circuit.
Moreover, because the power management at now portable apparatus can't only use a kind of charge pump, so the scope of first input signal that first buffer 16 is received is provided by another charge pump, just bear the Pu voltage C2P of group (as shown in Figure 4) of the charge pump of a multiplication of voltage, therefore, by dynamic electric voltage that internal circuit itself produced and as the cross-pressure of first switch 14, and need not additionally to use power circuit, so reduce the usable floor area of circuit, and then reduce cost.
First diverter switch 18 couples first switch 14 and first and helps Pu electric capacity 10, helps the Pu electric capacity 10 Pu voltage C1P of output group to switch first, and first output capacitance 20 couples first diverter switch 18 and first and helps Pu electric capacity 10, with the stable and Pu voltage C1P of output group.Wherein, first diverter switch 18 couples one first and drives buffer 22, and it also receives one first and switches signal, drives signal and produce one, and to control 18 conductings of first diverter switch or to end, first voltage level that switches signal is that the twice power supply is to no-voltage.Again, the first driving buffer 22 is an inverter buffer.
From the above, the first switch module 12 more comprises a second switch 120, one second buffer 122, the 3rd switch 124 and one the 3rd buffer 126.Second switch 120 couples first end that power vd D and first helps Pu electric capacity 10, and second buffer 122 couples second switch 120, and receives one second input signal, to control second switch 120 conductings or to end; The 3rd switch 124 couples first end that an earth terminal GND and first helps Pu electric capacity 10, and the 3rd buffer 126 couples the 3rd switch 124, and receives one the 3rd input signal, to control 124 conductings of the 3rd switch or to end.Wherein, second buffer 122 and the 3rd buffer 126 are an inverter buffer, and second switch 120 and the 3rd switch 124 are metal-oxide half field effect transistor.Because second switch 120 and the 3rd switch 124 all are metal-oxide half field effect transistor, so can be by the cross-pressure between the transistorized grid source electrode of above-mentioned increase, to reduce the impedance of second switch 120 and the 3rd switch 124, promptly the accurate scope in position of second input signal is adjusted into the power supply VCL to negative a times into power vd D; The accurate scope in position of the 3rd input signal is adjusted into two times of power vd D to no-voltage GND (as shown in Figure 5), and so the impedance of second switch 120 and the 3rd switch 124 is:
R
MOS，120∝[(W
120/L
120)*(|V
GS，120|-Vthp)]
-1
＝[(W
120/L
120)*(VDD-VCL-Vthp)]
-1
＝[(W
120/L
120)*(2*VDD-Vthp)]
-1
R
MOS，124∝[(W
124/L
124)*(V
GS，124-Vthn)]
-1
＝[(W
124/L
124)*(AVDD-Vthn)]
-1
＝[(W
124/L
124)*(2*VDD-Vthn)]
-1
From the above, after adjusting the accurate scope in position of second input signal and the 3rd input signal, it has all increased the cross-pressure between the grid source electrode of second switch 120 and the 3rd switch 124, promptly increase to two times of power vd D, and the impedance of minimizing second switch 120 and the 3rd switch 124, so, reduce the impedance of first switch 14, second switch 120 and the 3rd switch 124 simultaneously, and more promote the power output efficient of charge pump and the position standard of output voltage, and reduce the area efficiency of circuit area and then increase integrated circuit.
See also Fig. 4, be the circuit diagram of another preferred embodiment of the present invention.As shown in the figure, the charge pump of a negative multiplication of voltage of the present invention its comprise one second and help Pu electric capacity 30, second switch module 32, one the 4th switch 34, one the 4th buffer 36, one second diverter switch 38, second output capacitance 40 and one second driving buffer 42.Its present embodiment and Fig. 3 embodiment difference are that the 5th switch 34 is coupled to second and helps between one second end and earth terminal of Pu electric capacity 30, and second one second of driving that buffer 42 the received accurate scope in position of switching signal be power vd D to negative one times of power supply VCL, so make the power supply VCL of the negative multiplication of voltage of charge pump output of a negative multiplication of voltage.By the embodiment of Fig. 3 as can be known, be respectively first voltage to the second voltage, power vd D to bearing one times of power supply VCL and two times of power supply AVDD by the 5th input signal of the 4th input signal of adjusting the 4th switch 34, the 5th switch 320 and the 6th input signal of the 6th switch 324 to no-voltage (as shown in Figure 5), with the cross-pressure between the grid source electrode that increases switch, that is:
R
MOS，34∝[(W
34/L
34)*(V
GS，34-Vthn)]
-1
＝[(W
34/L
34)*(AVDD-Vthn)]
-1
＝[(W
34/L
34)*(2*VDD-Vthn)]
-1
R
MOS，320∝[(W
320/L
320)*(IV
GS，320|-Vthp)]
-1
＝[(W
320/L
320)*(VDD-VCL-Vthp)]
-1
＝[(W
320/L
320)*(2*VDD-Vthp)]
-1
R
MOS，324∝[(W
324/L
324)*(V
GS，324-Vthn)]
-1
＝[(W
324/L
324)*(AVDD-Vthn)]
-1
＝[(W
324/L
324)*(2*VDD-Vthn)]
-1
From the above, it increases the cross-pressure between the grid source electrode of the 4th switch 34, the 5th switch 320 and the 6th switch 324, reducing the impedance of the 4th switch 34, the 5th switch 320 and the 6th switch 324, and promote the accurate area efficiency with integrated circuit in power efficiency, the output voltage position of charge pump.
Again, because the power management of general portable apparatus can't only use a kind of charge pump, usually all can use the charge pump of two multiplication of voltages and negative one times charge pump, so, by the group Pu voltage of two charge pumps voltage level scope as each other input signal, need not using the usefulness of additional power supply circuit as input signal, so, save circuit area, and then save cost.
In sum, the charge pump of increase power efficiency of the present invention and output voltage, it increases the cross-pressure between the grid source electrode of first switch by the voltage level scope of first input signal of adjusting first switch, and then reduce the impedance of first switch, the area efficiency of and integrated circuit accurate with the power efficiency, the output voltage position that promote charge pump.Moreover, by two charge pumps in the circuit, with as the voltage level scope of input signal each other, and need not additionally use power circuit with the cross-pressure between the grid source electrode that increases switch, saving circuit area, and then save cost.
The above, it only is a preferred embodiment of the present invention, be not to be used for limiting scope of the invention process, all equalizations of doing according to the described shape of claim scope of the present invention, structure, feature and spirit change and modify, and all should be included in the claim scope of the present invention.
Claims (22)
1, a kind of charge pump that increases power efficiency and output voltage is characterized in that it comprises:
Group's Pu electric capacity;
A switch module couples one first end of this group's Pu electric capacity;
One first switch is coupled between one second end and power supply of this group's Pu electric capacity;
One first buffer, receive one first input signal, produce a controlling signal, to control this first switch conduction or to end, the accurate scope in position of this first input signal is between one first voltage to one, second voltage, this first voltage and this second voltage are associated with the cross-pressure of this first switch, and the cross-pressure multiple of this first switch is in this power supply, and this multiple is greater than 1;
A diverter switch couples this first switch and this group's Pu electric capacity, exports this group's Pu voltage to switch this group's Pu electric capacity; And
An output capacitance couples this second switch and this group's Pu electric capacity, with stable and export this group's Pu voltage.
2, charge pump as claimed in claim 1 is characterized in that, this switch module more comprises:
A second switch couples this first end of this power supply and this group's Pu electric capacity;
One second buffer couples this second switch, and receives one second input signal, and to control this second switch conducting or to end, the accurate scope in position of this second input signal is that this power supply is to this power supply of bearing one times.
3, charge pump as claimed in claim 1 is characterized in that, this switch module more comprises:
One the 3rd switch couples this first end of an earth terminal and this group's Pu electric capacity;
One the 3rd buffer couples the 3rd switch, and receives one the 3rd input signal, and to control the 3rd switch conduction or to end, the accurate scope in position of the 3rd input signal is that two times of these power supplys are to no-voltage.
4, charge pump as claimed in claim 2 is characterized in that, this second buffer is an inverter buffer.
5, charge pump as claimed in claim 2 is characterized in that, second switch is a metal-oxide half field effect transistor.
6, charge pump as claimed in claim 3 is characterized in that, the 3rd buffer is an inverter buffer.
7, charge pump as claimed in claim 3 is characterized in that, the 3rd switch is a metal-oxide half field effect transistor.
8, charge pump as claimed in claim 1 is characterized in that, this first voltage is group's Pu voltage of this group's Pu electric capacity, this group's Pu voltage that this second voltage is another charge pump.
9, charge pump as claimed in claim 1 is characterized in that, it more comprises:
A driving buffer couples this diverter switch, and receives a switching signal, drives signal and produce one, to control this diverter switch conducting or to end.
10, charge pump as claimed in claim 9 is characterized in that, this driving buffer is an inverter buffer.
11, charge pump as claimed in claim 1 is characterized in that, this first switch is a metal-oxide half field effect transistor.
12, a kind of charge pump that increases power efficiency and output voltage is characterized in that it comprises:
Group's Pu electric capacity;
A switch module couples one first end of this group's Pu electric capacity;
One first switch is coupled between one second end and earth terminal of this group's Pu electric capacity;
One first buffer, receive one first input signal, produce a controlling signal, to control this first switch conduction or to end, the accurate scope in position of this first input signal is between one first voltage to one, second voltage, this first voltage and this second voltage are associated with the cross-pressure of this first switch, and the cross-pressure multiple of this first switch is in this power supply, and this multiple is greater than 1;
A diverter switch couples this first switch and this group's Pu electric capacity, exports this group's Pu voltage to switch this group's Pu electric capacity; And
An output capacitance couples this second switch and this group's Pu electric capacity, with stable and export this group's Pu voltage.
13, charge pump as claimed in claim 12 is characterized in that, this switch module more comprises:
A second switch couples this first end of this power supply and this group's Pu electric capacity;
One second buffer couples this second switch, and receives one second input signal, and to control this second switch conducting or to end, the accurate scope in position of this second input signal is that this power supply is to this power supply of bearing one times.
14, charge pump as claimed in claim 13 is characterized in that, this switch module more comprises:
One the 3rd switch couples this first end of this earth terminal and this group's Pu electric capacity;
One the 3rd buffer couples the 3rd switch, and receives one the 3rd input signal, and controlling the 3rd switch conduction or to end, the accurate scope in position of the 3rd input signal is that this power supply of two times is to no-voltage.
15, charge pump as claimed in claim 13 is characterized in that, this second buffer is an inverter buffer.
16, charge pump as claimed in claim 13 is characterized in that, second switch is a metal-oxide half field effect transistor.
17, charge pump as claimed in claim 14 is characterized in that, the 3rd buffer is an inverter buffer.
18, charge pump as claimed in claim 14 is characterized in that, the 3rd switch is a metal-oxide half field effect transistor.
19, charge pump as claimed in claim 12 is characterized in that, this first voltage is group's Pu voltage of this group's Pu electric capacity; This group's Pu voltage that this second voltage is another charge pump.
20, charge pump as claimed in claim 12 is characterized in that, it more comprises:
A driving buffer couples this diverter switch, and receives a switching signal, drives signal and produce one, to control this diverter switch conducting or to end.
21, charge pump as claimed in claim 20 is characterized in that, this driving buffer is an inverter buffer.
22, charge pump as claimed in claim 12 is characterized in that, this first switch is a metal-oxide half field effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710302096A CN101471601B (en) | 2007-12-24 | 2007-12-24 | Electric charge assist pump for adding power efficiency and output voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710302096A CN101471601B (en) | 2007-12-24 | 2007-12-24 | Electric charge assist pump for adding power efficiency and output voltage |
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| Publication Number | Publication Date |
|---|---|
| CN101471601A true CN101471601A (en) | 2009-07-01 |
| CN101471601B CN101471601B (en) | 2012-09-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200710302096A Active CN101471601B (en) | 2007-12-24 | 2007-12-24 | Electric charge assist pump for adding power efficiency and output voltage |
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| CN (1) | CN101471601B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361399A (en) * | 2011-09-28 | 2012-02-22 | 福建华映显示科技有限公司 | Power supply device of thin film transistor liquid crystal display |
| CN102594131A (en) * | 2011-01-07 | 2012-07-18 | 联咏科技股份有限公司 | Charge pump circuit and driving integrated circuit using charge pump circuit |
| TWI450260B (en) * | 2011-08-30 | 2014-08-21 | Chunghwa Picture Tubes Ltd | Power device of a thin film transistor liquid crystal display |
| US8922270B2 (en) | 2011-01-04 | 2014-12-30 | Novatek Microelectronics Corp. | Charge pump and driver integrated circuit using the same |
| CN111245221A (en) * | 2020-03-23 | 2020-06-05 | 厦门傅里叶电子有限公司 | Double charge pump |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW494631B (en) * | 2000-01-26 | 2002-07-11 | Sanyo Electric Co | Charge pump circuit |
| JP2003235244A (en) * | 2002-02-06 | 2003-08-22 | Seiko Instruments Inc | Rash current limiting/noise reducing circuit for pfm control charge pump |
-
2007
- 2007-12-24 CN CN200710302096A patent/CN101471601B/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8922270B2 (en) | 2011-01-04 | 2014-12-30 | Novatek Microelectronics Corp. | Charge pump and driver integrated circuit using the same |
| CN102594131A (en) * | 2011-01-07 | 2012-07-18 | 联咏科技股份有限公司 | Charge pump circuit and driving integrated circuit using charge pump circuit |
| CN102594131B (en) * | 2011-01-07 | 2015-11-25 | 联咏科技股份有限公司 | Charge pump circuit and apply its drive integrated circult |
| TWI450260B (en) * | 2011-08-30 | 2014-08-21 | Chunghwa Picture Tubes Ltd | Power device of a thin film transistor liquid crystal display |
| CN102361399A (en) * | 2011-09-28 | 2012-02-22 | 福建华映显示科技有限公司 | Power supply device of thin film transistor liquid crystal display |
| CN102361399B (en) * | 2011-09-28 | 2014-02-26 | 福建华映显示科技有限公司 | Power supply device of thin film transistor liquid crystal display |
| CN111245221A (en) * | 2020-03-23 | 2020-06-05 | 厦门傅里叶电子有限公司 | Double charge pump |
| CN111245221B (en) * | 2020-03-23 | 2021-03-12 | 厦门傅里叶电子有限公司 | Double charge pump |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101471601B (en) | 2012-09-19 |
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