CN2665934Y - High-brightness LED with reflection mirror on electroplated substrate - Google Patents
High-brightness LED with reflection mirror on electroplated substrate Download PDFInfo
- Publication number
- CN2665934Y CN2665934Y CNU032490399U CN03249039U CN2665934Y CN 2665934 Y CN2665934 Y CN 2665934Y CN U032490399 U CNU032490399 U CN U032490399U CN 03249039 U CN03249039 U CN 03249039U CN 2665934 Y CN2665934 Y CN 2665934Y
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- Prior art keywords
- layer
- substrate
- led
- high brightness
- metal
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- Expired - Lifetime
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- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 238000009713 electroplating Methods 0.000 claims abstract description 29
- 239000010410 layer Substances 0.000 claims description 100
- 239000011247 coating layer Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- 229910052737 gold Inorganic materials 0.000 claims description 16
- 239000004575 stone Substances 0.000 claims description 16
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- 238000005036 potential barrier Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000007747 plating Methods 0.000 abstract description 6
- 238000002310 reflectometry Methods 0.000 abstract description 3
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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Abstract
The utility model mainly relates to a high brightness light emitting diode (LED) that is provided with an electroplating substrate with a reflective mirror. The means of the utility model is that: after a metal mirror reflective layer is plated and provided, a metal permanent substrate is formed at the bottom of the metal mirror reflective layer by the means of plating; or after an electric mirror layer or a metal conducting layer is plated and provided, the metal permanent substrate is formed at the bottom thereof by the means of plating. The means can effectively reduce the manufacturing cost, maintain the reflectivity of the reflective mirror and facilitate to improve the luminous efficiency of the LED. The high brightness light emitting diode that is provided with the electroplating substrate can further improve the disadvantage that the traditional structure has poor heat dissipation efficacy.
Description
Technical field
The utility model is about a kind of manufacturing high brightness LED, refers to a kind of plane or high brightness LED that uses galvanoplastic to form the permanent electric plated substrate and get with this manufactured especially.
Background technology
Light-Emitting Diode is one of photoelectric cell that attracts most attention at present, and it has life-span length, power saving, volume is little, driving voltage is low, reaction speed is fast, shatter-proof and identification capability advantages of higher.For improving product usefulness and reduce manufacturing cost, academia and industrial circle there's no one who doesn't or isn't drop into the throw oneself into research and development of processing procedure and material of ample resources.
The method of existing manufacturing light-emitting diode, mainly be the brilliant LED epitaxial layer that forms a pn interface of heap of stone on the substrate of materials such as GaAs, this epitaxial of heap of stone conformed to the permanent substrate of transparent substrates or tool metallic mirror surface with wafer coating technique (wafer bonding).Yet the main shortcoming of this processing procedure is to need through high-temperature heat treatment more than 150 ℃, about conforming to transparent substrates, because binding temperature very high (＞500 ℃) damages epitaxial layer easily, reduce the product yield, and there is the not good problem of substrate radiating effect again in the processing procedure complexity; If directly conform to the permanent substrate of tool metallic mirror surface, originally the mirror surface of She Ji high reflectance may reduce its reflectivity because of the heat treatment (＞300 ℃) of binding temperature.
The TaiWan, China patent then proposes the method that a kind of formation has the semiconductor element of a metal substrate No. 477079, and this method is included in the temporary substrate that forms a metal material on the semi-conductor layer, is removed at last again.Yet the inventor found that through real, if desire to remove the temporary substrate of metal material, must destroy the semiconductor epitaxial layer.In addition, it is also infeasible that this patent advocates that first plated metal substrate forms the way of electrode again, because electrode must pass through ohmic contact heat treatment again, under this high temperature because metal substrate and semiconductor epitaxial layer thermal expansion coefficient difference are very big, in case after finishing the plating of metal substrate earlier, when carrying out the making of Ohm contact electrode again, very easily cause semiconductor element to break or crumble owing to the thermal expansion coefficient difference of semiconductor epitaxial of heap of stone and metal substrate is excessive.That is the permanent substrate of vertical LED certainly will can't be finished with galvanoplastic.
In view of this, the inventor is by the research and development experience of being engaged in association area for many years, deeply inquire at the problem that above-mentioned light-emitting diode faced, and actively seek the scheme that solves, through the exploitation of long-term endeavour with study, finally find a kind of high brightness LED of electroplating substrate tool mirror surface, use effectively reducing cost, and make substrate have good heat radiation function.
Summary of the invention
The purpose of this utility model is to provide a kind of high brightness LED of electroplating substrate tool mirror surface, can effectively improve luminous efficiency and reduce manufacturing cost.
Another purpose of the present utility model is to provide a kind of high brightness LED of electroplating substrate tool mirror surface, makes its substrate have good heat radiation function.
The utility model is made the method for the high brightness LED of electroplating substrate tool mirror surface, comprise the following steps: a) to provide one of heap of stone brilliant with substrate and in this brilliant LED epitaxial layer that grows up on substrate of heap of stone, this LED epitaxial layer of heap of stonely brilliantly comprises the second type coating layer, active luminescent layer, the first type coating layer, form layer and metal contact layer on substrate in regular turn in this; B) this LED epitaxial layer of etching is with exposed this second type coating layer; C) respectively with etching method with the making second electrode place of LED expose out, form first electrode and second electrode on this metal contact layer and the second exposed type criticize on the coating; And finish the ohmic contact heat treatment of first electrode and second electrode; D) on this LED epitaxial layer and first electrode, attach (bonding) temporary substrate; E) removal should be built the brilliant substrate of using; F) form a specular layer in this LED epitaxial layer bottom; G) form an electroplating substrate in this specular layer bottom with galvanoplastic (plating); And h) removes this temporary substrate.
Above-mentioned crystalline substance of heap of stone is the substrate that can be materials such as GaAs, sapphire, indium phosphide with substrate.The material of LED epitaxial layer also can be two or six compounds of group or three or five compounds of group of direct band gap pattern (Direct-bandgap), for example GaxAlyInl-x-yN, (AlxGal-x) yInl-y P, InxGal-xAs, ZnSxSeL-x; 0≤x≤1,0≤y≤1 wherein.Still can deposit a nesa coating between LED epitaxial layer and this first electrode, to promote the even distribution character of its electric current.
Specular layer of the present utility model can evaporation, sputter or ion plating method are formed at this LED epitaxial layer bottom; Its material can adopt the metal that forms high potential barrier with this LED epitaxial layer, for example: contain material or its combination of Ag, Pt, Pd, Au, Au/Zn, Au/Be, Au/Ge, Au/Ge/Ni, In, Sn, Al, Zn, Ge, Ni; Also can be the combination of insulator/metal layer, and this metal level has low-refraction, this insulating barrier has high index of refraction and contacts with this LED epitaxial layer, for example: Al/Al
2O
3, Al/SiO
2, Al/MgF
2, Pt/Al
2O
3, Pt/SiO
2, Pt/MgF
2, Au/Al
2O
3, Au/SiO
2, Au/MgF
2, Ag/Al
2O
3, Ag/SiO
2, Ag/MgF
2
Above-mentioned temporary substrate normally adopts glass substrate, can epoxy resin or wax be pasted on this wafer of heap of stone; The attaching program can be carried out under 70-150 ℃.Crystalline substance of heap of stone then can be removed by etching method with substrate.
The high brightness LED of the utility model electroplating substrate tool mirror surface mainly comprises a LED epitaxial layer, one first electrode, one second electrode, a specular layer and an electroplating substrate.The LED epitaxial layer comprises metal contact layer, form layer, the first type coating layer, active luminescent layer and the second type coating layer in regular turn, and wherein this second type coating layer and exposed part make second electrode formed thereon, first electrode then shape on this metal contact layer.Specular layer is formed at this LED epitaxial layer bottom electrical plated substrate and then is formed at this specular layer bottom with galvanoplastic.Brilliant material with substrate, LED epitaxial layer, specular layer etc. wherein of heap of stone can be the same.
The purpose of this utility model is achieved in that a kind of high brightness LED of electroplating substrate tool mirror surface, comprise: a LED epitaxial layer, comprise metal contact layer, form layer, the first type coating layer, active luminescent layer and the second type coating layer in regular turn, wherein this second type coating layer and exposed part; One first electrode is formed on this metal contact layer; One second electrode is formed on this second exposed type coating layer; One specular layer is formed at this LED epitaxial layer bottom; And an electroplating substrate, be formed at this specular layer bottom with galvanoplastic.Should crystalline substance of heap of stone be to select GaAs substrate, sapphire substrate, indium phosphide substrate for use wherein with substrate.Wherein the material of this LED epitaxial layer is to be selected from GaxAlyInl-x-yN, (AlxGal-x) yInl-yP, InxGal-xAs, ZnSxSeL-x; 0≤x≤1,0≤y≤1 wherein.Wherein between first electrode of this LED epitaxial layer and this metal contact layer and comprise a nesa coating.Wherein this specular layer is the metal that forms high potential barrier with this LED epitaxial layer.Wherein this specular layer is material or its combination of selecting for use from containing Ag, Pt, Pd, Au, Au/Zn, Au/Be, Au/Ge, Au/Ge/Ni, In, Sn, Al, Zn, Ge, Ni.Wherein this specular layer is the combination of insulator/metal layer, and this metal level has low-refraction, and this insulating barrier has high index of refraction and contacts with this LED epitaxial layer.Wherein the insulator/metal layer of this specular layer makes up Al/Al
2O
3, Al/SiO
2, Al/MgF
2, Pt/Al
2O
3, Pt/SiO
2, Pt/MgF
2, Al/Al
2O
3, Al/SiO
2, Al/MgF
2, Au/Al
2O
3, Au/SiO
2, Au/MgF
2, Ag/Al
2O
3, Ag/SiO
2, Ag/MgF
2
Description of drawings
Fig. 1 to Fig. 6 is the schematic flow sheet of the high brightness LED of the utility model manufacture method tool electroplating substrate;
Fig. 7 is the section of structure of another embodiment of the utility model;
Fig. 8 is another example structure profile of the utility model electroplating substrate.
Accompanying drawing number:
11. the second type coating layer, 12. active luminescent layer 13. first type coating layers
14. form layer 15. metal contact layer 19. crystalline substance substrates of heap of stone
21. electroplating substrate 25. interface specular layers
251. metal level 252. insulating barriers
26. metallic mirror surface reflector 29. glass temporary substrates
31. first electrode, 32,33. second electrodes
Embodiment
Below with regard to preferred embodiment of the present utility model, conjunction with figs. is further described, so that the utility model is had more detailed understanding.The following stated only is in order to explain preferred embodiment of the present utility model, be not according to this utility model to be done any pro forma restriction, so every any form of being done based on creation spirit of the present utility model is modified or change, all should belong to category of the present utility model.
See also Fig. 1 to Fig. 6, the utility model is made the schematic flow sheet of the high brightness LED of electroplating substrate tool mirror surface.Among Fig. 1, a GaAs material of heap of stone brilliant in growing up to the second type coating layer 11, active luminescent layer 12, the first type coating layer 13, form layer 14 and a metal contact layer 15 on the substrate 19 in regular turn, that is LED epitaxial layer.Metal contact layer 15, form layer 14, the first type coating layer 13, active luminescent layer 12 and cut apart the size that forms each LED crystal particle through etching, and expose the part second type coating layer 11.First electrode 31 and second electrode 32 all are arranged at the front of each light-emitting diode; Wherein each electrode 31 is formed on the metal contact layer 15, and metal contact layer 15 etchings of non-electrode district can be removed, and to avoid the metal contact layer extinction, second electrode 32 is formed on the second exposed type coating layer 11.The material of the utility model LED epitaxial layer can be two or six compounds of group or three or five compounds of group of direct band gap pattern (Direct-bandgap), for example GaxAlyInl-x-yN, (AlxGal-x) yInl-yP, InxGal-xAs, ZnSxSeL-x; 0≤x≤1,0≤y≤1 wherein.The active luminescent layer 12 of present embodiment is no admixture (AlxGal-x) yInl-yP quantum well material, and the first type coating layer 13 is p-(AlxGal-x) yInl-yP or p-GaP material, and 11 of the second type coating layers are n-(AlxGal-x) yInl-yP material.
Fig. 2 then is shown on the wafer of heap of stone and attaches (bonding) glass temporary substrate 29, and this glass temporary substrate 29 is to be coated with one deck epoxy resin or wax earlier, then is being pasted under 70-150 ℃ on the wafer of heap of stone.Because this step without high-temperature process, therefore can not damage wafer of heap of stone.Then as shown in Figure 3, epitaxial gaas is removed with etching method with substrate 19.
For improving the brightness of light-emitting diode, as shown in Figure 4, the second type coating layer, 11 bottoms in the LED epitaxial layer deposit a dielectric specular layer 25 with the physical property coating method, and the specular layer 25 of present embodiment is that the alumina insulating layer 252 by the aluminum metal layer 251 of tool low-refraction and high index of refraction combines; But also can adopt Al/SiO
2, Al/MgF
2, Pt/Al
2O
3, Pt/SiO
2, Pt/MgF
2, Au/Al
2O
3, Au/SiO
2, Au/MgF
2, Ag/Al
2O
3, Ag/SiO
2, Ag/MgF
2Combination.
The insulating barrier 252 of present embodiment is to be contacted by the LED epitaxial layer.
Then, wafer immerses and contains in the electroplate liquid of bivalent cupric ion, makes copper be deposited on metal level 251 bottoms of dielectric specular layer 25 through reduction reaction, forms the permanent electric plated substrate 21 of thickness more than or equal to 30 μ m, as shown in Figure 5.Can form one deck catalyst film prior to metal conductive film 22 bottoms before immersion plating liquid, for example palladium is used the reduction reaction of quickening copper, that is electrodeless copper facing (electroless copper).There is no particular restriction for the electroplate liquid that the utility model uses, and can adopt can not corrode the semi-conducting material in general processing procedure person, for example copper cyanider electroplate liquid.
At last, remove glass temporary substrate 29 as Fig. 6 after, just can obtain high brightness LED as the utility model tool electroplating substrate.
In addition, for solving traditional light-emitting diode because of the uneven phenomenon of CURRENT DISTRIBUTION, cause the darker and more gloomy shortcoming of light-emitting diode central authorities, present embodiment can plate the nesa coating (not shown) earlier in first electrode 31 and 15 of metal contact layers, indium-doped tin oxide (ITO) material for example is to improve this problem.
Fig. 7 is the structure chart of another embodiment of the utility model, it is the metallic mirror surface reflector 26 of silver that itself and the first embodiment difference are to select for use material, but material or its combination that also can select Pt, Au, Au/Zn, Au/Be, Au/Ge, Au/Ge/Ni, In, Sn, Al, Zn, Ge, Ni for use.All the other manufacturing process are identical with first embodiment, so do not give unnecessary details.
Electroplating substrate 21 of the present utility model also can be electroplated whole, can avoid the precalculated position of LED Cutting Road, and at exposing with respect to the part beyond the Cutting Road, does parcel plating, as Fig. 8, becomes crystal grain to make things convenient for follow-up cutting of LED wafer or splitting.
The utility model uses the major advantage of galvanoplastic to be low cost and high yield, has particularly avoided the high-temperature process of wafer joint (bonding) process, can keep the reflectivity of specular layer, and then improves the brightness of light-emitting diode.The utility model is finished electrode earlier and is made the way that forms electroplating substrate again with galvanoplastic, more can avoid in the prior art semiconductor epitaxial layer in ohmic contact heat treatment, owing to the excessive puzzlement that damages of the thermal expansion coefficient difference of electroplating substrate.In addition, the copper layer of generation also has preferable radiating effect, can effectively solve the heat history problem of traditional light-emitting diode.
Claims (8)
1. the high brightness LED of an electroplating substrate tool mirror surface is characterized in that comprising:
One LED epitaxial layer comprises metal contact layer, form layer, the first type coating layer, active luminescent layer and the second type coating layer, wherein this second type coating layer and exposed part in regular turn;
One first electrode is formed on this metal contact layer;
One second electrode is formed on this second exposed type coating layer;
One specular layer is formed at this LED epitaxial layer bottom; And
One electroplating substrate is formed at this specular layer bottom with galvanoplastic.
2. the high brightness LED of electroplating substrate tool mirror surface according to claim 1 is characterized in that: this crystalline substance of heap of stone is to select GaAs substrate, sapphire substrate, indium phosphide substrate for use with substrate.
3. the high brightness LED of electroplating substrate tool mirror surface according to claim 1 is characterized in that: the material of this LED epitaxial layer is to be selected from GaxAlyInl-x-yN, (AlxGal-x) yInl-yP, InxGal-xAs, ZnSxSeL-x; 0≤x≤1,0≤y≤1 wherein.
4. the high brightness LED of electroplating substrate tool mirror surface according to claim 1 is characterized in that: between first electrode of this LED epitaxial layer and this metal contact layer and comprise a nesa coating.
5. the high brightness LED of electroplating substrate tool mirror surface according to claim 1 is characterized in that: this specular layer is the metal that forms high potential barrier with this LED epitaxial layer.
6. the high brightness LED of electroplating substrate tool mirror surface according to claim 1 is characterized in that: this specular layer is material or its combination of selecting for use from containing Ag, Pt, Pd, Au, Au/Zn, Au/Be, Au/Ge, Au/Ge/Ni, In, Sn, Al, Zn, Ge, Ni.
7. the high brightness LED of electroplating substrate tool mirror surface according to claim 1, it is characterized in that: this specular layer is the combination of insulator/metal layer, and this metal level has low-refraction, and this insulating barrier has high index of refraction and contacts with this LED epitaxial layer.
8. the high brightness LED of electroplating substrate tool mirror surface according to claim 7 is characterized in that: the insulator/metal layer combination Al/Al of this specular layer
2O
3, Al/SiO
2, Al/MgF
2, Pt/Al
2O
3, Pt/SiO
2, Pt/MgF
2, Al/Al
2O
3, Al/SiO
2, Al/MgF
2, Au/Al
2O
3, Au/SiO
2, Au/MgF
2, Ag/Al
2O
3, Ag/SiO
2, Ag/MgF
2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032490399U CN2665934Y (en) | 2003-09-25 | 2003-09-25 | High-brightness LED with reflection mirror on electroplated substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032490399U CN2665934Y (en) | 2003-09-25 | 2003-09-25 | High-brightness LED with reflection mirror on electroplated substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2665934Y true CN2665934Y (en) | 2004-12-22 |
Family
ID=34327472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU032490399U Expired - Lifetime CN2665934Y (en) | 2003-09-25 | 2003-09-25 | High-brightness LED with reflection mirror on electroplated substrate |
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| Country | Link |
|---|---|
| CN (1) | CN2665934Y (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101345275B (en) * | 2007-07-10 | 2010-06-09 | 晶元光电股份有限公司 | Luminous element |
| US7811838B2 (en) | 2006-12-29 | 2010-10-12 | Epistar Corporation | High efficiency light-emitting diode and method for manufacturing the same |
| US7989840B2 (en) | 2006-08-29 | 2011-08-02 | Toshiba Lighting & Technology Corporation | Illumination apparatus having a plurality of semiconductor light-emitting devices |
| CN101226973B (en) * | 2007-01-17 | 2011-10-12 | 晶元光电股份有限公司 | LED with high efficiency and method for manufacturing the same |
| CN101656279B (en) * | 2008-08-22 | 2011-12-07 | 晶元光电股份有限公司 | Luminous element comprising composite electroplating substrate |
| CN102270715A (en) * | 2007-01-17 | 2011-12-07 | 晶元光电股份有限公司 | Light emitting diode |
| US8098003B2 (en) | 2009-06-01 | 2012-01-17 | Toshiba Lighting & Technology Corporation | Light emitting module and illumination device |
| US8167456B2 (en) | 2006-11-30 | 2012-05-01 | Toshiba Lighting & Technology Corporation | Illumination device with semiconductor light-emitting elements |
| CN102017156B (en) * | 2008-02-25 | 2013-03-13 | 光波光电技术公司 | Current-injecting/tunneling light-emitting device and method |
| CN102082216B (en) * | 2009-11-26 | 2013-04-24 | 上海蓝光科技有限公司 | Light emitting diode chip and manufacturing method thereof |
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2003
- 2003-09-25 CN CNU032490399U patent/CN2665934Y/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7989840B2 (en) | 2006-08-29 | 2011-08-02 | Toshiba Lighting & Technology Corporation | Illumination apparatus having a plurality of semiconductor light-emitting devices |
| US8558272B2 (en) | 2006-08-29 | 2013-10-15 | Toshiba Lighting & Technology Corporation | Illumination apparatus having a plurality of semiconductor light-emitting devices |
| US8167456B2 (en) | 2006-11-30 | 2012-05-01 | Toshiba Lighting & Technology Corporation | Illumination device with semiconductor light-emitting elements |
| US7811838B2 (en) | 2006-12-29 | 2010-10-12 | Epistar Corporation | High efficiency light-emitting diode and method for manufacturing the same |
| US8546156B2 (en) | 2006-12-29 | 2013-10-01 | Epistar Corporation | High efficiency light-emitting diode and method for manufacturing the same |
| CN101226973B (en) * | 2007-01-17 | 2011-10-12 | 晶元光电股份有限公司 | LED with high efficiency and method for manufacturing the same |
| CN102270715A (en) * | 2007-01-17 | 2011-12-07 | 晶元光电股份有限公司 | Light emitting diode |
| CN101345275B (en) * | 2007-07-10 | 2010-06-09 | 晶元光电股份有限公司 | Luminous element |
| CN102017156B (en) * | 2008-02-25 | 2013-03-13 | 光波光电技术公司 | Current-injecting/tunneling light-emitting device and method |
| CN101656279B (en) * | 2008-08-22 | 2011-12-07 | 晶元光电股份有限公司 | Luminous element comprising composite electroplating substrate |
| US8098003B2 (en) | 2009-06-01 | 2012-01-17 | Toshiba Lighting & Technology Corporation | Light emitting module and illumination device |
| CN102082216B (en) * | 2009-11-26 | 2013-04-24 | 上海蓝光科技有限公司 | Light emitting diode chip and manufacturing method thereof |
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