CN2632847Y - Thermal-oxidative even flowing thermal insulative radiator - Google Patents
Thermal-oxidative even flowing thermal insulative radiator Download PDFInfo
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- CN2632847Y CN2632847Y CN 03266411 CN03266411U CN2632847Y CN 2632847 Y CN2632847 Y CN 2632847Y CN 03266411 CN03266411 CN 03266411 CN 03266411 U CN03266411 U CN 03266411U CN 2632847 Y CN2632847 Y CN 2632847Y
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- reflecting surface
- uniform flow
- pressuring plate
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- shunting
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Abstract
The utility model relates to a thermal-oxidative even flowing thermal insualtive radiator, which comprises a diffluent reflecting surface and a uniform stream pressure plate; wherein, the diffluent reflecting surface and the uniform stream pressure plate are respectively connected with two terminals of a link span, the diffluent reflecting surface takes a hemispheric shape; a diffluent pressure plate is provided with an air hole; the link span between the uniform stream reflecting surface and the uniform stream pressure plate is provided with a flake-like groove which is used for putting a silicon chip. The device has the advantages of simple shape, easy use, and no need to make any change to the oxidation oven. The degree of the oxygenated uniformity is improved from larger than minus 15 percent to 15 percent to smaller than minus 2.5 percent to 2.5 percent after using the heat insulation and heat emission device. Besides, the problem that the oxide layer is not uniform when inter-combustion structure is used in big pipe diameter cal car to oxidize with hydrogen and oxygen compound. The utility model provides an easy, effective and low cost proposal for the quality improvement of the oxidation art with hydrogen and oxygen compound and can be used widely in the modern large-scale integrate circuit art.
Description
Technical field:
The utility model relates to a kind of device that is used for microelectronic technique, relates in particular to the device of thermal oxidation in a kind of microelectronic technique.
Background technology:
Advantages such as the synthetic oxidation of hydrogen-oxygen is fast with oxidation rate, quality of oxide layer is high, the contamination level is low, technology is simple, reliable are widely used in VLSI (modern large scale integrated circuit) technology.In general, the synthetic oxidation furnaces of hydrogen-oxygen is divided into two kinds of pre-burning cell-type and internal combustion types.The former, complex structure needs special-purpose precombustion chamber and control assembly thereof, is used for the oxidation of large-sized silicon wafers, its oxidation good uniformity more; The latter, simple in structure, be directly to insert the hydrogen jet pipe at general oxidation furnace inlet end, need not special-purpose member.Though, the mode of oxidizing of this internal combustion structure, highly versatile.But when using it for the heavy caliber boiler tube, because hydrogen flowing quantity is big, hydrogen flame power is big, destroyed the Temperature Distribution in the diffusion furnace, cause the oxidation uniformity relatively poor: the oxidated layer thickness deviation is greater than ± 15% in the sheet and between sheet, suitably reduce hydrogen flowing quantity or warm area is tilted, the oxidated layer thickness deviation can be reduced to ± 10%, it is unacceptable that this remains modern VLSI technology institute.And when temperature lower (800-1000 ℃), the oxidation uniformity can be poorer.And this temperature is often used in modern VLSI technology.
Summary of the invention:
The purpose of this utility model is to solve at the heavy caliber boiler tube carries out internal combustion relatively poor problem of oxidation uniformity when making the synthetic oxidation of hydrogen-oxygen, provides a kind of and can improve the inhomogeneity uniform flow heat insulation and dissipation of oxidation device.
Thermal oxidation uniform flow heat insulation and dissipation device of the present utility model comprises the shunting reflecting surface, the uniform flow pressuring plate, and shunting reflecting surface and uniform flow pressuring plate are connected to the link two ends, and the shunting reflecting surface is the hemisphere face structure; Have air vent hole on the shunting pressuring plate; Have film trap on the link between shunting reflecting surface and the uniform flow pressuring plate, place silicon chip.
Above-mentioned shunting pressuring plate is a circular slab, evenly offers air vent hole on the plate face.
The diameter of above-mentioned shunting pressuring plate is greater than the spherical radius of described shunting reflecting surface.
Above-mentioned shunting reflecting surface, uniform flow pressuring plate and link adopt quartz or carbofrax material to make.
The utility model is the relatively poor problem of oxidation uniformity when carrying out the synthetic oxidation of hydrogen-oxygen at the heavy caliber boiler tube, angle from fluid mechanics and thermal conduction study, analyzed in the heavy caliber oxidation furnace, adopted the internal combustion structure to carry out the synthetic oxidation of hydrogen-oxygen, caused the uneven reason of silicon chip layer thickness; According to the principle of fluid mechanics and thermal conduction study, the scheme that addresses this problem has been proposed.
Principle of the present utility model is: a, overfire air stream guiding furnace wall fully dispels the heat it.Because, with the furnace wall heat-shift be the unique heat radiation approach of overfire air stream; B, allow diffusion sole section galvanic couple correctly react to come out of the stove in overheated situation, by changing the heat that limit section heating power comes the equilibrium hydrogen flame to bring into; C, to block and absorb the infrared radiation that the hydrogen flame sends, make it can not inject the flat-temperature zone.From above-mentioned three principles, and according to the principle of fluid mechanics and thermal conduction study, utility model of the present invention has designed a kind of thermal oxidation uniform flow heat insulation and dissipation device, as shown in Figure 1.Experiment shows, the use of this device, and the uniformity that makes the synthetic oxidation of internal combustion structure hydrogen-oxygen is from greater than ± 15% level of bringing up to less than ± 2.5%.
Apparatus structure of the present utility model is simple, easy to use, do not need to diffusion furnace carry out any transformation, effect after using is very obvious.The synthetic oxidation uniformity of internal combustion type hydrogen-oxygen is from bringing up to less than ± 2.5% greater than ± 15% after using uniform flow heat insulation and dissipation device.Owing to having analyzed the reason that problem produces more all sidedly, and, when design, each factor is all considered to some extent, therefore, having solved the internal combustion structure preferably is used for big caliber oxidation furnace and carries out the synthetic oxidation of hydrogen-oxygen, cause the uneven problem of oxidated layer thickness, for the quality that improves the synthetic oxidation technology of hydrogen-oxygen provides a kind of easy, effective, low cost solution.
Description of drawings:
Fig. 1 uniform flow heat insulation and dissipation of the present utility model apparatus structure schematic diagram
(a) survey view (b) profile
1-uniform flow pressuring plate; The 2-silicon chip group; Perforate circular hole on the 3-uniform flow pressuring plate;
Link between 4-shunting reflecting surface and uniform flow pressuring plate;
5-sphere baffle plate-shunting reflecting surface
Fig. 2 uniform flow heat insulation and dissipation of the present utility model device user mode schematic diagram
The Quartz stove tube of 6-diffusion furnace; 7-diffusion furnace calandria; The oxidized silicon chip of 8-;
9-diffusion sole section temperature thermocouple; 10-uniform flow heat insulation and dissipation device;
11-combustion of hydrogen flame; 12-hydrogen rifle
Embodiment:
Uniform flow heat insulation and dissipation device of the present utility model adopts quartz or carbofrax material to make, and is hemisphere face baffle plate-shunting reflecting surface towards an end of hydrogen flame; The other end is diameter circular slab bigger, that be uniform-distribution with a plurality of circular holes-uniform flow pressuring plate; Have film trap on two supports of connection shunting reflecting surface and uniform flow pressuring plate, be used to place silicon chip.The shunting reflecting surface is seen Fig. 2 towards the hydrogen flame during use.The main effect of shunting reflecting surface is overfire air stream guiding furnace wall, adopts spherical structure that high temperature gas flow is evenly scattered, and avoids shunting the reflecting surface local overheating and by scorification.In addition, sphere also can fall the scattering of part infrared radiation.Place one group of silicon chip behind the shunting reflecting surface, form " barrier wall " that influence air motion; Thermal current can be because of being subjected to retraining suddenly to produce the vortex disturbance through out-of-date, and the strong more heat release of disturbance is just strong more.Because than higher, the radiation of hydrogen flame is absorbed and is converted to heat silicon chip herein, carries out heat exchange by air-flow to ir-absorbance; Therefore, this group silicon chip has double action.Uniform flow pressuring plate after the silicon chip group has three effects, and the one, reduce the circulation area of air-flow, strengthen the local pressure of meeting the air-flow face, the heat-exchange time that prolongs air-flow is to improve heat exchange efficiency; The 2nd, make the still overheated air-flow of part scatter and move along furnace wall, causing the reaction of diffusion sole section galvanic couple, control limit end heating power carries out " compensation " in real time to the heat of overfire air stream; The 3rd, equally distributed circular hole can make air-flow enter the flat-temperature zone more equably on the plate.The effect of uniform flow heat insulation and dissipation device is summarized as follows: the overfire air stream guiding furnace wall that (1) produces the hydrogen flame, and in addition disturbance make its abundant heat release; (2) cause of the reaction of control galvanic couple in limit, by the unnecessary heat of realtime power adjustment " compensation " to thermal current; (3) radiation is reflected and is absorbed to the hydrogen flame.
Device of the present utility model is adapted at carrying out in 90～180 millimeters diffusion furnaces of boiler tube diameter the synthetic oxidation of internal combustion type hydrogen-oxygen.As Fig. 1, shown in 2,120 millimeters of uniform flow pressuring plate diameters, 100 millimeters of the silicon chip diameters of silicon chip group, perforate circular hole seven apertures in the human head on the uniform flow pressuring plate is uniform, long 120 millimeters of link between shunting reflecting surface and uniform flow pressuring plate, on have film trap, place silicon chip, sphere baffle plate-shunting reflecting surface is the hemisphere of 110 millimeters of diameters, at the boiler tube diameter is when in 140 millimeters the diffusion furnace 150 silicon chips (100 millimeters of diameters) being carried out oxidation that thickness is respectively 80 nanometers and 800 nanometers, uniform flow heat insulation and dissipation device sphere baffle plate is apart from the about 15～20cm of spout, the uniform flow pressuring plate is apart from the about 5cm of limit section galvanic couple, use before and after the uniform flow heat insulation and dissipation device of quartz material five point measurement results of oxide thickness.(No. 3 positions are by fire door, and No. 148 positions are by the hydrogen flame end)
| Oxidizing temperature (℃) | Sampling silicon chip position | Oxide thickness (nm) before using | The uniformity (%) | Use rear oxidation thickness (nm) | The uniformity (%) | ||||||||
| On | In | Down | A left side | Right | On | In | Down | A left side | Right | ||||
| 900 | 3 | 68 | 67 | 67 | 68 | 68 | +18.0 -10.6 | 78 | 79 | 79 | 78 | 78 | +1.8 -1.8 |
| 75 | 75 | 76 | 75 | 76 | 76 | 79 | 81 | 80 | 80 | 80 | |||
| 148 | 87 | 89 | 89 | 90 | 89 | 81 | 81 | 81 | 82 | 81 | |||
| 1000 | 3 | 657 | 652 | 649 | 655 | 658 | +15.9 -10.0 | 786 | 788 | 794 | 779 | 784 | +2.2 -2.3 |
| 75 | 728 | 725 | 723 | 729 | 727 | 804 | 808 | 807 | 808 | 801 | |||
| 148 | 841 | 839 | 840 | 645 | 843 | 824 | 820 | 823 | 827 | 819 | |||
Simple and practical, low-cost apparatus of the present utility model can be improved the uniformity of the synthetic oxidation of hydrogen-oxygen significantly, for the oxidation technology of integrated circuit provides a kind of effective processing method.
Claims (4)
1, a kind of thermal oxidation uniform flow heat insulation and dissipation device comprises the shunting reflecting surface, the uniform flow pressuring plate, and shunting reflecting surface and uniform flow pressuring plate are connected to the link two ends, it is characterized in that:
Described shunting reflecting surface is the hemisphere face structure;
Have air vent hole on the described shunting pressuring plate;
Have film trap on the link between described shunting reflecting surface and the uniform flow pressuring plate, place silicon chip.
2, thermal oxidation uniform flow heat insulation and dissipation device as claimed in claim 1 is characterized in that described shunting pressuring plate is a circular slab, evenly offers air vent hole on the plate face.
3, thermal oxidation uniform flow heat insulation and dissipation device as claimed in claim 2 is characterized in that the spherical radius of the diameter of described shunting pressuring plate greater than described shunting reflecting surface.
4, thermal oxidation uniform flow heat insulation and dissipation device as claimed in claim 1 is characterized in that described shunting reflecting surface, uniform flow pressuring plate and link adopt quartz or carbofrax material to make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03266411 CN2632847Y (en) | 2003-06-30 | 2003-06-30 | Thermal-oxidative even flowing thermal insulative radiator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03266411 CN2632847Y (en) | 2003-06-30 | 2003-06-30 | Thermal-oxidative even flowing thermal insulative radiator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2632847Y true CN2632847Y (en) | 2004-08-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03266411 Expired - Fee Related CN2632847Y (en) | 2003-06-30 | 2003-06-30 | Thermal-oxidative even flowing thermal insulative radiator |
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| Country | Link |
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| CN (1) | CN2632847Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101813410B (en) * | 2008-12-17 | 2012-11-14 | 北京七星华创电子股份有限公司 | 300mm vertical oxidation furnace quartz boat rotary device |
| CN105378143A (en) * | 2014-06-12 | 2016-03-02 | 深圳市大富精工有限公司 | Vacuum coating device, data line supports, and vacuum coating method |
| CN112349631A (en) * | 2020-11-04 | 2021-02-09 | 长江存储科技有限责任公司 | Gas transmission pipeline and semiconductor machine |
-
2003
- 2003-06-30 CN CN 03266411 patent/CN2632847Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101813410B (en) * | 2008-12-17 | 2012-11-14 | 北京七星华创电子股份有限公司 | 300mm vertical oxidation furnace quartz boat rotary device |
| CN105378143A (en) * | 2014-06-12 | 2016-03-02 | 深圳市大富精工有限公司 | Vacuum coating device, data line supports, and vacuum coating method |
| CN105378143B (en) * | 2014-06-12 | 2018-09-04 | 深圳市大富精工有限公司 | A kind of vacuum coating equipment and film plating process |
| CN112349631A (en) * | 2020-11-04 | 2021-02-09 | 长江存储科技有限责任公司 | Gas transmission pipeline and semiconductor machine |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040811 |