CN2593368Y - 宽谱域低温叠层硅基薄膜太阳电池 - Google Patents
宽谱域低温叠层硅基薄膜太阳电池 Download PDFInfo
- Publication number
- CN2593368Y CN2593368Y CN02294641U CN02294641U CN2593368Y CN 2593368 Y CN2593368 Y CN 2593368Y CN 02294641 U CN02294641 U CN 02294641U CN 02294641 U CN02294641 U CN 02294641U CN 2593368 Y CN2593368 Y CN 2593368Y
- Authority
- CN
- China
- Prior art keywords
- silicon
- solar cell
- layer
- film solar
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 238000005516 engineering process Methods 0.000 claims abstract description 6
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000010408 film Substances 0.000 claims description 13
- 150000003376 silicon Chemical class 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 230000012010 growth Effects 0.000 claims description 7
- 239000013081 microcrystal Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- 238000006555 catalytic reaction Methods 0.000 claims description 2
- 239000005543 nano-size silicon particle Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN02294641U CN2593368Y (zh) | 2002-12-30 | 2002-12-30 | 宽谱域低温叠层硅基薄膜太阳电池 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN02294641U CN2593368Y (zh) | 2002-12-30 | 2002-12-30 | 宽谱域低温叠层硅基薄膜太阳电池 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN2593368Y true CN2593368Y (zh) | 2003-12-17 |
Family
ID=33752033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN02294641U Expired - Lifetime CN2593368Y (zh) | 2002-12-30 | 2002-12-30 | 宽谱域低温叠层硅基薄膜太阳电池 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN2593368Y (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101964373A (zh) * | 2010-08-18 | 2011-02-02 | 中国科学院半导体研究所 | 一种宽谱光伏效应的双结太阳电池及其制备方法 |
CN101777591B (zh) * | 2009-12-30 | 2011-05-04 | 南开大学 | 一种全谱域叠层硅基薄膜太阳电池 |
CN101820019B (zh) * | 2009-12-14 | 2011-11-30 | 湖南共创光伏科技有限公司 | 制造薄膜太阳能电池的硅基薄膜沉积方法 |
CN107146819A (zh) * | 2017-06-22 | 2017-09-08 | 南京南大光电工程研究院有限公司 | 新型薄膜太阳电池 |
-
2002
- 2002-12-30 CN CN02294641U patent/CN2593368Y/zh not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101820019B (zh) * | 2009-12-14 | 2011-11-30 | 湖南共创光伏科技有限公司 | 制造薄膜太阳能电池的硅基薄膜沉积方法 |
CN101777591B (zh) * | 2009-12-30 | 2011-05-04 | 南开大学 | 一种全谱域叠层硅基薄膜太阳电池 |
CN101964373A (zh) * | 2010-08-18 | 2011-02-02 | 中国科学院半导体研究所 | 一种宽谱光伏效应的双结太阳电池及其制备方法 |
CN101964373B (zh) * | 2010-08-18 | 2012-11-14 | 中国科学院半导体研究所 | 一种宽谱光伏效应的双结太阳电池及其制备方法 |
CN107146819A (zh) * | 2017-06-22 | 2017-09-08 | 南京南大光电工程研究院有限公司 | 新型薄膜太阳电池 |
CN107146819B (zh) * | 2017-06-22 | 2023-05-23 | 南京南大光电工程研究院有限公司 | 新型薄膜太阳电池 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100876613B1 (ko) | 탄뎀 박막 실리콘 태양전지 및 그 제조방법 | |
CN207320169U (zh) | 一种渐变带隙的钙钛矿电池 | |
US8088990B1 (en) | Color building-integrated photovoltaic (BIPV) panel | |
JP2006319068A (ja) | 多接合型シリコン系薄膜光電変換装置、及びその製造方法 | |
CN109560144B (zh) | 一种cigs薄膜太阳能电池及其制备方法 | |
CN110611030A (zh) | 具有阵列结构电子传输层的钙钛矿太阳能电池及其制备方法 | |
CN107342331B (zh) | 一种t型顶电极背反射薄膜太阳电池的生产工艺 | |
CN101510568A (zh) | 非晶硅/染料敏化叠层薄膜太阳电池及其制备方法 | |
CN2593368Y (zh) | 宽谱域低温叠层硅基薄膜太阳电池 | |
CN101556977A (zh) | 薄膜硅光伏器件及其制造方法和背电极以及光伏组件 | |
CN1420570A (zh) | 宽谱域低温叠层硅基薄膜太阳电池 | |
CN101556973B (zh) | 薄膜光伏器件及复合电极 | |
CN103280466B (zh) | 基于AlOx/Ag/ZnO结构的高反射高绒度背电极 | |
CN102938430B (zh) | 包含中间层的柔性衬底硅基多结叠层太阳电池及其制造方法 | |
CN115799375A (zh) | 无ito电极的钙钛矿/硅异质结两端串联太阳能电池及其制备方法 | |
CN102945865A (zh) | 一种基于金字塔绒度形貌ZnO层的导电背反射电极 | |
CN114171622A (zh) | 异质结太阳能电池及其制作方法 | |
CN114156361A (zh) | 异质结太阳能电池及其制作方法 | |
CN114171623A (zh) | 异质结太阳能电池及其制作方法 | |
CN102270672A (zh) | 一种用于薄膜太阳能电池的多层背反射镜结构 | |
CN114171633A (zh) | 异质结太阳能电池及其制作方法 | |
CN112652675A (zh) | 一种彩色薄膜光伏组件及其制备方法 | |
CN111584665A (zh) | 一种用于薄片化双面电池的背面氮化硅叠层膜的制备方法 | |
KR101732104B1 (ko) | 태양전지 및 그 제조방법 | |
CN216084908U (zh) | CdSe/N型硅叠层电池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20090206 Address after: Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian City, Quanzhou Province, China: 362000 Patentee after: Fujian Golden Sun Solar Technic Co., Ltd. Address before: Tianjin City, Wei Jin Road No. 94, zip code: 300071 Patentee before: Nankai University |
|
ASS | Succession or assignment of patent right |
Owner name: FUJIAN JUNSHI ENERGY CO., LTD. Free format text: FORMER OWNER: NANKAI UNIV. Effective date: 20090206 |
|
ASS | Succession or assignment of patent right |
Owner name: HANERGY HOLDING GROUP CO., LTD. Free format text: FORMER OWNER: FUJIAN GOLDEN SUN SOLAR TECHNIC CO., LTD. Effective date: 20111121 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 362000 QUANZHOU, FUJIAN PROVINCE TO: 101407 HUAIROU, BEIJING |
|
TR01 | Transfer of patent right |
Effective date of registration: 20111121 Address after: 101407 Beijing Huairou Yanqi Industrial Development Zone District No. 59 room 148 Patentee after: Hina Holding Group Co. Ltd. Address before: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Patentee before: Fujian Golden Sun Solar Technic Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: KUNMING BOYANG YUANHONG ENERGY TECHNOLOGY CO., LTD Free format text: FORMER OWNER: HANERGY HOLDING GROUP CO., LTD. Effective date: 20120724 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 101407 HUAIROU, BEIJING TO: 650031 KUNMING, YUNNAN PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20120724 Address after: 650031, Yunnan, Kunming by opening up the road, 3 science and Technology Innovation Park, room A25-6 Patentee after: KUNMING APOLLO YUANHONG ENERGY SCIENCE & TECHNOLOGY CO., LTD. Address before: 101407 Beijing Huairou Yanqi Industrial Development Zone District No. 59 room 148 Patentee before: Hina Holding Group Co. Ltd. |
|
C17 | Cessation of patent right | ||
CX01 | Expiry of patent term |
Expiration termination date: 20121230 Granted publication date: 20031217 |