CN2587061Y - High heat rejection image sensory element - Google Patents

High heat rejection image sensory element Download PDF

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Publication number
CN2587061Y
CN2587061Y CN02288857U CN02288857U CN2587061Y CN 2587061 Y CN2587061 Y CN 2587061Y CN 02288857 U CN02288857 U CN 02288857U CN 02288857 U CN02288857 U CN 02288857U CN 2587061 Y CN2587061 Y CN 2587061Y
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CN
China
Prior art keywords
plate
intermediate plate
high heat
image sensing
sheet metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN02288857U
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Chinese (zh)
Inventor
谢志鸿
吴志成
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Kingpak Technology Inc
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Kingpak Technology Inc
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Publication date
Application filed by Kingpak Technology Inc filed Critical Kingpak Technology Inc
Priority to CN02288857U priority Critical patent/CN2587061Y/en
Application granted granted Critical
Publication of CN2587061Y publication Critical patent/CN2587061Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

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  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

The utility model relates to a high heat rejection image sensory element. The utility model is proposed in order to provide an image sensory element which simplifies the encapsulation producing progress and improves the product good rate, and the image sensory element has the advantages of low cost, small size, light weight, good radiation effect and long service life. The high heat rejection image sensory element comprises a base plate, a flange layer, an image sensing chip, a plurality of conducting wires and a euphotic layer, wherein, the base plate comprises a plurality of zygomorphic metal sheets which are arranged mutually, and an intermediate plate which is positioned among the zygomorphic metal sheets, and the zygomorphic metal sheets form a first plate and a second plate which are different in height. The level height of the intermediate plate is smaller than the level height of the first plate. The flange layer coats the metal sheets and the intermediate plate of the base plate, and the upper surface of the first plate, the lower surface of the second plate and the bottom surface of the intermediate plate of the metal sheets are exposed from the flange layer. The image sensing chip is arranged on the intermediate plate of the base plate. The first plate of the metal sheets and the image sensing chip are connected by the conducting wires. The euphotic layer is arranged on the flange layer to cover the image sensing chip.

Description

The image sensor of high heat radiation
Technical field
The utility model belongs to image sensor, particularly a kind of image sensor of high heat radiation.
Background technology
As shown in Figure 1 and Figure 2, known image sensor comprises that plural image sensing wafer 13, cloth are planted by circuit 12 and surrounds a plurality of substrates 10 for image sensing wafer 13 configuring areas 17, is attached on the substrate 10 and forms several and the flange layer 14 and the transparent glass 20 in circuit 12 corresponding hollow out zones 16 by viscose 15.
During encapsulation, be at first to provide cloth to plant to surround a plurality of image sense wafer 13 configuring areas 17 that supply by circuit 12; Flange layer 14 is provided, and flange layer 14 is attached on the substrate 10 by viscose 15, so that a plurality of image sensing wafers 13 on the substrate 10 are exposed by hollow out zone 16, again plural wires 18 is electrically connected image sensing wafer 13 and substrate 10, single that at last substrate 10 is cut into as shown in Figure 2 sticks together the packaging body that flange layer 14 is arranged.As shown in Figure 3, single packaging body is put in tool 22,, be about to transparent glass again be covered on the flange layer 14, and finish the encapsulation of image sensing wafer 13 by viscose glue 24 to orient the zone of ccontaining transparent glass 20.
There is following shortcoming in known image sensor:
1, must make substrate 10, and cloth is planted circuit 12 on substrate 10, row is made flange layer 14 more in advance, and flange layer 14 is attached on the substrate 10, and so, its fabrication schedule is quite complicated, and fee of material is also higher, makes its whole manufacturing cost height.
2, after the encapsulation of finishing image sensor, must cut into single packaging body, because flange layer 14 is to be attached on the substrate 10 by viscose 15, so that when desiring to be cut to single encapsulation, often cause viscose 15 to overflow, thereby have influence on the signal transmission of substrate 10.
3, carry out after the program system of covering transparent glass 20 gives cutting substrate 10, cause cutting bits pollution image sensing wafer 13 this moment easily, so, will have influence on the yield of image sensing wafer 13.
Summary of the invention
The purpose of this utility model provide a kind ofly simplify encapsulation procedure, improve the product yield, reduce cost, volume is little, the image sensor of the height heat radiation of in light weight, good heat dissipation effect, long service life.
The utility model comprises substrate, flange layer, image sensing wafer, plural wires and photic zone; Substrate comprises the symmetrical sheet metal of a plurality of mutual arrangements and is positioned at intermediate plate between the left-right symmetric sheet metal; Symmetrical sheet metal forms first and second plate of differing heights, and intermediate plate is low than the level height of first plate; Flange layer envelopes a plurality of sheet metals and the intermediate plate of substrate, and the first plate upper surface, the second plate lower surface and the intermediate plate bottom surface of sheet metal are exposed by flange layer respectively; Image sensing wafer system is arranged on the intermediate plate of substrate; Plural wires downlink connection sheet metal first plate and image sensing sheet; Photic zone is arranged on the flange layer, to cover image sensing wafer.
Wherein:
The flange series of strata are with thermoplastic plastic's injection molding.
Is connected by the 3rd plate between sheet metal first plate and second plate.
Photic zone is a transparent glass.
Photic zone is a transparent colloid.
The symmetrical sheet metal of a plurality of mutual arrangement of substrate and intermediate plate system are with the moulding of metal integrated punching.
Intermediate plate system is identical with the level height of second plate.
Because the utility model comprises substrate, flange layer, image sensing wafer, plural wires and photic zone; Substrate comprises the symmetrical sheet metal of a plurality of mutual arrangements and is positioned at intermediate plate between the left-right symmetric sheet metal; Symmetrical sheet metal forms first and second plate of differing heights, and intermediate plate is low than the level height of first plate; Flange layer envelopes a plurality of sheet metals and the intermediate plate of substrate, and the first plate upper surface, the second plate lower surface and the intermediate plate bottom surface of sheet metal are exposed by flange layer respectively; Image sensing wafer system is arranged on the intermediate plate of substrate; Plural wires downlink connection sheet metal first plate and image sensing sheet; Photic zone is arranged on the flange layer, to cover image sensing wafer.Because of substrate system is made of the sheet metal of a plurality of exportable signals, enveloping a plurality of sheet metals of substrate and the flange layer of intermediate plate is exposed the first plate upper surface, the second plate lower surface and the intermediate plate bottom surface of sheet metal respectively by flange layer, not only can save known on substrate cloth plant expense that circuit produces effectively to reduce production costs, and can be more effectively the heat of image sensing wafer be shed, make its better heat-radiation effect; Image sensing wafer system is arranged on the intermediate plate of reduced levels height, can reduce overall packaging height.Not only simplify encapsulation procedure, improve the product yield, reduce cost, and volume is little, in light weight, good heat dissipation effect, long service life, thereby reach the purpose of this utility model.
Description of drawings
Fig. 1, be known image sensor decomposition texture schematic isometric.
Fig. 2, be known image sensor structure schematic sectional view.
Fig. 3, be known image sensor structure schematic sectional view (encapsulation back).
Fig. 4, be the utility model structural representation cutaway view.
Fig. 5, for the utility model structural representation cutaway view (photic zone is a transparent colloid).
Embodiment
As shown in Figure 4, the utility model is that it comprises substrate 70, flange layer 72, image sensing wafer 74, plural wires 76 and photic zone 78 in order to be arranged on the printed circuit board (PCB).
Substrate 70 is with the moulding of metal integrated punching, the intermediate plate 81 that it includes the symmetrical sheet metal 80 of a plurality of mutual arrangements and is positioned at 80 of symmetrical sheet metals, symmetrical each sheet metal 80 is formed with first plate 82 and second plate 84 of differing heights, and 84 of first plate 82 and second plates interconnect by the 3rd plate 83, and intermediate plate 81 is a level height than first plate 82 is low, in the present embodiment, intermediate plate 81 is to be identical level height with second plate 84, second plate 84 is to be electrically connected on the printed circuit board (PCB), in order to signal is passed to printed circuit board (PCB).
Flange layer 72 is directly to follow moulding U word shape with a plurality of sheet metals 80 with the thermoplastic plastic via jetting mold, and form the shaped as frame structure in substrate 70 peripheries, to form disposal area 85 in intermediate plate 81 positions, and flange layer 72 envelopes a plurality of sheet metals 80, and first plate 82 of sheet metal 80 and second plate 84 are exposed by flange layer 72, and flange layer 72 is also exposed in intermediate plate 81 bottoms, that is the lower surface of the upper surface of first plate 82 and second plate 84 is neither is coated by flange layer 72, makes the lower surface of second plate 84 can be electrically connected to printed circuit board (PCB).And flange layer 72 is exposed in the bottom surface of intermediate plate 81, so that heat is shed effectively, can obtain preferable radiating effect.
Image sensing wafer 74 is to be arranged on the intermediate plate 81 of substrate 70, and is positioned at disposal area 85, which is provided with a plurality of weld pads 86.Because intermediate plate 81 is that the level height than first plate 82 is low, therefore, when image sensing wafer 74 is arranged on the intermediate plate 81, the height of whole packaging body will greatly reduce, and can reach compact purpose.And because intermediate plate 81 is to be exposed by flange layer 72, therefore, the heat transferred of image sensing wafer 74 can directly contact with outside air to intermediate plate 81, makes its better heat-radiation effect.
One end 90 of plural wires 76 is the weld pad 86 that is electrically connected to image sensing wafer 74, the other end 92 is first plate 82 that is electrically connected to sheet metal 80, make that the signal of image sensing wafer 74 is passed on the substrate 70, and be passed to printed circuit board (PCB) by second plate 84 of substrate 70.
Photic zone 78 is a transparent glass, and it is to be covered on the flange layer 72, in order to cover image sensing wafer 74, makes image sensing wafer 74 see through photic zone 78 and receives the light signal.
As shown in Figure 5, photic zone 78a also can be transparent colloid, and it is to be filled in the flange layer 72 formed disposal areas 85, and image sensing wafer 74 is enveloped, and makes image sensing wafer 74 be seen through photic zone 78a and receives the light signal.
As mentioned above, the utility model is concluded following advantage:
1, constitute substrates 70 with a plurality of sheet metals 80, and with each sheet metal 80 output signal, can save known on substrate cloth plant the expense that circuit produces, therefore, can effectively reduce production costs.
2, directly form required flange layer 72 and envelope a plurality of sheet metals 80 with shoot mode, can simplify known adhesion process, and can avoid cutting into the excessive glue situation that single packaging body produces, can improve the product yield effectively.
3, image sensing wafer 74 is to be arranged on the intermediate plate 81 of reduced levels height, can reduce overall packaging height.
4, intermediate plate 81 is directly to contact with outside air, can be more effectively the heat of image sensing wafer 74 be shed, and makes its better heat-radiation effect.

Claims (7)

1, a kind of image sensor of high heat radiation, it comprises substrate, flange layer, image sensing wafer, plural wires and photic zone; It is characterized in that described substrate comprises the symmetrical sheet metal of a plurality of mutual arrangements and is positioned at intermediate plate between the left-right symmetric sheet metal; Symmetrical sheet metal forms first and second plate of differing heights, and intermediate plate is low than the level height of first plate; Flange layer envelopes a plurality of sheet metals and the intermediate plate of substrate, and the first plate upper surface, the second plate lower surface and the intermediate plate bottom surface of sheet metal are exposed by flange layer respectively; Image sensing wafer system is arranged on the intermediate plate of substrate; Plural wires downlink connection sheet metal first plate and image sensing sheet; Photic zone is arranged on the flange layer, to cover image sensing wafer.
2, the image sensor of high heat radiation according to claim 1 is characterized in that described flange series of strata are with thermoplastic plastic's injection molding.
3, the image sensor of high heat radiation according to claim 1 is characterized in that between described sheet metal first plate and second plate that the is connected by the 3rd plate.
4, the image sensor of high heat radiation according to claim 1 is characterized in that described photic zone is a transparent glass.
5, the image sensor of high heat radiation according to claim 1 is characterized in that described photic zone is a transparent colloid.
6, the image sensor of high heat radiation according to claim 1 is characterized in that the symmetrical sheet metal of a plurality of mutual arrangement of described substrate and intermediate plate are with the moulding of metal integrated punching.
7, the image sensor of high heat radiation according to claim 1 is characterized in that described intermediate plate is identical with the level height of second plate.
CN02288857U 2002-11-26 2002-11-26 High heat rejection image sensory element Expired - Fee Related CN2587061Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN02288857U CN2587061Y (en) 2002-11-26 2002-11-26 High heat rejection image sensory element

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Application Number Priority Date Filing Date Title
CN02288857U CN2587061Y (en) 2002-11-26 2002-11-26 High heat rejection image sensory element

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CN2587061Y true CN2587061Y (en) 2003-11-19

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100444396C (en) * 2003-12-02 2008-12-17 三星电子株式会社 Solid-state imaging apparatus, wiring substrate and methods of manufacturing the same
CN100544007C (en) * 2005-11-16 2009-09-23 鸿富锦精密工业（深圳）有限公司 Encapsulation structure for image sensor
CN100546026C (en) * 2007-04-29 2009-09-30 鸿富锦精密工业（深圳）有限公司 Image intake device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100444396C (en) * 2003-12-02 2008-12-17 三星电子株式会社 Solid-state imaging apparatus, wiring substrate and methods of manufacturing the same
CN100544007C (en) * 2005-11-16 2009-09-23 鸿富锦精密工业（深圳）有限公司 Encapsulation structure for image sensor
CN100546026C (en) * 2007-04-29 2009-09-30 鸿富锦精密工业（深圳）有限公司 Image intake device

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