CN2549478Y

CN2549478Y - Micro-array relief integrator

Info

Publication number: CN2549478Y
Application number: CN 02237662
Authority: CN
Inventors: 余国彬; 姚汉民; 胡松
Original assignee: Institute of Optics and Electronics of CAS
Current assignee: Institute of Optics and Electronics of CAS; Academy of Opto Electronics of CAS
Priority date: 2002-06-24
Filing date: 2002-06-24
Publication date: 2003-05-07
Anticipated expiration: 2012-06-24

Abstract

The utility model relates to a micro-array relief integrator suitable for the lighting system of a depth photo-etching apparatus. The both faces of the micro-array relief integrator are both regular hexagonal relief structures, and the relief patterns on both faces are processed through depth photo-etching; the utility model has smooth function to the diffraction effect between the mask and silicon chip of the depth photo-etching machine, which carries out differential calculus and integral calculus to the light of the lighting system. When being used with a diaphragm, the utility model can change the optical collecting angle of the depth photo-etching system so as to have better function of smoothening the diffraction effect, increase the height and width ration of the line and improve the quality of the line. The utility model has the advantages of the prior optical integrators and overcomes the disadvantages and defects of the prior optical integrators at the same time, greatly reducing the processing and assembling difficulty so as to make the energy on the mask and the silicon chip be distributed equally in all directions.

Description

Microarray embossment integration device

Technical field

The utility model relates to a kind of optical integration device, particularly be widely used in the illuminator of degree of depth optical lithography machine, be used to improve illumination uniformity, make energy be isotropic distribution, the microarray embossment integration device of the depth-width ratio of level and smooth diffraction effect and increase lines.

Background technology

In existing optical lithography machine, the used integration device of its illuminator mainly contains three classes: the first kind is to be made of two groups of fly lenses, and every group of fly lens all is to be glued on the sheet glass by little regular hexagon plano-convex lens to form.The advantage of this device is that energy is to be isotropic distribution basically on mask and silicon chip; But this device fabrication and assembling be unusual difficulty all, and light comes back reflective between two flat boards, influenced the effect of illumination uniformity and level and smooth diffraction.

Second class is that the little square integrating rod of biconvex bundlees the integration device that forms side by side.The advantage of this device is that processing is than being easier to and fine at the level and smooth diffracting effect of x and y direction; Its shortcoming is: owing to there are eight limits to constitute and mismachining tolerance on each angle point, be difficult to guarantee not light leak when assembling.And (as: 45 ° of directions) influenced the depth-width ratio of illumination uniformity and lines because it faces the interelement spacing mutually and does not wait, and the energy on mask and the silicon chip is the anisotropy distribution in the other direction.More than two class integration device all adopt the condensing angle of circle or square light hurdle control optical system, its figure depth-width ratio is not high.

The 3rd class is that the little square integrating rod of biconvex adopts brick pattern to arrange the integration device that forms.The advantage of this device is that processing is than being easier to and fine at the level and smooth diffracting effect of x, y and 45 ° of directions; Its shortcoming is: owing to there are five limits to constitute and mismachining tolerance on each angle point, cannot say for sure to demonstrate,prove not light leak when assembling.(as: 30 ° of directions or 60 ° of directions) have influenced the depth-width ratio of illumination uniformity and figure because it faces the interelement spacing mutually and does not wait, and energy is the anisotropy distribution on mask and the silicon chip in the other direction.

The utility model content

Technology of the present utility model is dealt with problems and is: the shortcoming and defect that overcomes existing various integration device, overcome repeatedly reflection, guaranteeing to face mutually the interelement spacing equates, make the energy of mask and silicon chip be isotropic distribution, and cooperate dodecagon light hurdle, and improved illumination uniformity and level and smooth diffraction effect, increase the lines depth-width ratio, thereby the raising photolithography resolution reduces processing and assembly difficulty simultaneously.

Technical solution of the present utility model is: microarray embossment integration device is characterized in that: two faces of integration device are orthohexagonal embossment structure, and the relief pattern on two faces is to form by degree of depth lithography process.

Unit elements on each face is regular hexagon embossment lens, and is very close to each other between the unit elements, and faces unit elements centre distance arbitrarily mutually and equate, and with dodecagon light hurdle control condensing angle.

The utility model following advantage of comparing with existing integration device: the unit elements on each face of integration device (regular hexagon embossment lens) forms by degree of depth lithography process, and handling ease and precision are high; The two sides is a regular hexagon embossment lens arra, and is to form by two-sided degree of depth lithography process, is not to form by the flat board gummed, has not only avoided repeatedly reflection, and the relative positional accuracy on two sides is very high simultaneously; What each unit elements adopted is regular hexagon mechanism, has guaranteed that the spacing between unit elements equates, makes the energy distribution on mask and the silicon chip be isotropic distribution, thereby reaches the effect that improves illumination uniformity and level and smooth diffraction.In addition, the dodecagon light hurdle of the utility model employing more can improve the depth-width ratio and the photolithography resolution of lines.

Description of drawings

Fig. 1 is a cut-open view of the present utility model;

Fig. 2 is a planimetric map of the present utility model;

Fig. 3 is dodecagon light hurdle and constitutional diagram of the present utility model.

Embodiment

As shown in Figure 1, the end face of element integral element is the structure of binary embossment minute surface 1 and 2, and this structure forms by two-sided degree of depth photoetching, and processing and sub-aperture precision are very high easily, and are with a kind of medium, have avoided the repeatedly reflection of light.Binary embossment minute surface 1 and 2 relative positional accuracy are very high, and the two sides lens have strict status requirement.

As shown in Figure 2, on each face of integration device regular hexagon embossment lens arra, the element integral element is a regular hexagon relief pattern 3, close-packed array is arranged.Owing to adopt regular hexagon, the capacity usage ratio height; And face two interelement spacings of element integral arbitrarily mutually and equate that total has guaranteed the isotropy that luminous energy distributes evenly, continuously.

As shown in Figure 3, the logical light light hurdle of microarray integration device is the dodecagon structure, and the symmetry of this structure is fine, makes the energy on mask and the silicon chip be isotropic distribution, and to the same figure on the mask, all directions can obtain identical illuminance.The distance of two parallel edges of dodecagon has been controlled the size of condensing angle.The condensing angle that makes degree of depth etching system is 1.2 °, has improved homogeneity and diffraction smoothing effect greatly.This integration device is used for degree of depth litho machine, and homogeneity reaches 2.5% in the lighting area of Φ 100, and lines resolution reaches 0.8 μ m, and depth-width ratio is more than 20: 1.

Claims

1, a kind of microarray embossment integration device that is applicable to degree of depth lithographic equipment illuminator, it is characterized in that: two faces of integration device are orthohexagonal embossment structure, and the relief pattern on two faces is to form by degree of depth lithography process.

2, microarray embossment integration device according to claim 1, it is characterized in that: the unit elements on each face is regular hexagon embossment lens, and is very close to each other between the unit elements, and faces unit elements centre distance arbitrarily mutually and equate.

3, microarray embossment integration device according to claim 1 is characterized in that: also comprise the dodecagon light hurdle of controlling condensing angle.