CN2458622Y - Pulse microwave intensified high-voltage low-temp plasma chemical reactor - Google Patents
Pulse microwave intensified high-voltage low-temp plasma chemical reactor Download PDFInfo
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- CN2458622Y CN2458622Y CN 00252860 CN00252860U CN2458622Y CN 2458622 Y CN2458622 Y CN 2458622Y CN 00252860 CN00252860 CN 00252860 CN 00252860 U CN00252860 U CN 00252860U CN 2458622 Y CN2458622 Y CN 2458622Y
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- high pressure
- coaxial
- chemical reactor
- plasma chemical
- telefault
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- 239000000126 substance Substances 0.000 title claims abstract description 15
- 239000004020 conductor Substances 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims description 19
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 7
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004677 Nylon Substances 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 229920001778 nylon Polymers 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 2
- 238000009776 industrial production Methods 0.000 abstract 1
- 238000003786 synthesis reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000009992 mercerising Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 231100000614 poison Toxicity 0.000 description 3
- 230000007096 poisonous effect Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000010795 gaseous waste Substances 0.000 description 2
- 238000004845 hydriding Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003345 natural gas Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000002440 industrial waste Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
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Abstract
The utility model relates to a pulse microwave intensified high-voltage low-temperature plasma chemical reactor. The utility model is characterized in that the device is composed of a waveguide coaxial converting device (1), a coaxial cavity (2) and a TM [010] resonance cavity (3) with a re-entrant column which are connected; an inner conductor (21) of the coaxial cavity (2) penetrates into the TM [010] resonance cavity (3); a plasma is led in to excite the voltage through a high-voltage lead-in structure (22). The utility model can effectively control the plasma, and therefore, the utility model can realize industrial production of plasma chemical synthesis.
Description
The utility model relates to chemical reactor, and a kind of pulse microwave reinforced high pressure low temperature plasma chemical reactor is provided especially.
Compare with conventional direct-current arc, high-frequency plasma, microwave plasma has characteristics such as reactivity height, capacity usage ratio height, pure electrodeless pollution and density height, at aspects such as carrying out chemosynthesis, material surface modifying special advantages is arranged, be applicable to preparation and the processing of making high purity substance, and process efficiency is higher.Microwave plasma can be divided into two kinds of infrabar (less than 760Torr) and hyperbars (greater than 760Torr) by its working pressure.The infrabar microwave plasma has been used widely in fields such as thin film deposition, plasma etchings, but the negative pressure condition of work can't be applicable to such as commercial Application such as switching through of natural gas straight, poisonous and harmful industrial waste gas purifyings.In order to satisfy the needs that large-scale plasma chemistry is synthetic, reach the development new type light source, people have invented the exciting technique of multiple high-pressure microwave plasma in nearly 20 years, summary is got up to mainly contain following several: the exciting technique (CMP) of (1) capacitive coupling microwave plasma; (2) exciting technique (Surfatron) of coaxial base table ground roll microwave plasma; (3) exciting technique of waveguide-based surface wave microwave plasma (Surfaguide); (4) TM
010The exciting technique of resonator cavity (MIP) microwave plasma.But angle from chemical reaction, the high-pressure microwave plasma exciting technique that these are traditional also is not suitable for being applied to most of chemical reactions, because the practice of plasma chemistry in decades shows to have only when plasma is in the low temperature nonequilibrium state, just be suitable for most chemical reaction.Our research group has made some significant work in this field; in the patent 00110422.5 of having been accepted, introduced a kind of high-pressure microwave plasma exciter; this device can accumulate microwave energy effectively, strengthen field intensity; do not needing the external world " can realize exciting and keeping of plasma under the condition of ignition in hydriding; can be under the condition of various hyperbar protective atmospheres, atmospheric flow, high power capacity, operation with security and stability.But, this microwave plasma generation technique, to encourage with keeping appearance is one, on structure, have high field intensity and energy accumulation, be easy to make the low temperature glow plasma moment that excites nonequilibrium state that the initial stage forms to carry out the transition to the high temperature arc plasma of near-equilibrium state, this just seems very unfavorable for those astable chemical species of preparation.Therefore,, make microwave plasma promote the chemical reaction technology really to possess the commercial Application condition, must find a kind of excitation of reliable hyperbar low-temperature microwave plasma and keep method for the advantage with the infrabar microwave plasma expands to hyperbar.
The purpose of this utility model is to provide a kind of pulse microwave reinforced high pressure low temperature plasma chemical reactor, and it can make plasma be effectively controlled, thereby can realize the industrialization that plasma chemistry is synthetic.
The utility model provides a kind of pulse microwave reinforced high pressure low temperature plasma chemical reactor, it is characterized in that: this device is by the TM of waveguide-coaxial conversion (1), coaxial cavity (2), band reentry post
010Resonator cavity (3) connects and composes; The inner wire (21) of coaxial cavity (2) is deep into TM
010In the resonator cavity (3), and introduce structure (22) by high pressure and introduce plasma exciatiaon voltage.
It is inductance and electric capacity composite structure that high pressure described in the utility model is introduced structure (22), by external conductive casing (224), two capacitance sheets (221) (223) and telefault (222) constitute, one end of coaxial inner conductor (21) at first links to each other with a capacitance sheet (221), this capacitance sheet (221) constitutes the electric capacity I with the outer conductor of coaxial cable, constitute the electric capacity II between external conductive casing (224) and the capacitance sheet (223), capacitance sheet (221) links to each other by telefault (222) with capacitance sheet (223), because introducing the external conductive casing (224) of structure, the outer conductor of coaxial cable and high pressure join, thereby on circuit, form the electric capacity I and connect relation in parallel with inductance again with the electric capacity II.
In principle, capacitance and inductance value should be big as far as possible, and be big as far as possible for guaranteeing capacitance, can by increase capacity area and reduce between the capacitance sheet distance and between capacitance sheet filling medium realize; Increasing inductance can and place magnetic medium and realize by the number of turn of increase telefault in telefault.In the embodiment of this patent, reduce capacitance gap and be subjected to coupled high-tension restriction, along with reducing of gap, high voltage is easy to capacitor breakdown, thereby causes choking structure to lose efficacy.Generally capacitor needs working medium to isolate, and these media can be materials such as nylon, tetrafluoroethene, high purity aluminium oxide, magnesium oxide, mica.The number of turn of telefault can suitably increase or reduce as required, the foundation of judgement be in debug process, measure the leakage of microwave can situation, guaranteeing to leak the quantity that as far as possible reduces telefault under can be less than the situation of 10 microwatt/square centimeters.Gap between the capacitor determines that according to the voltage breakdown of selected dielectric material when dielectric material was selected high purity aluminium oxide for use, capacitance gap was the 0.2-2 millimeter, and the number of turn of telefault is the 5-20 circle; When medium was tetrafluoroethene, the gap was the 0.2-1.0 millimeter, and the number of turn of telefault is the 10-30 circle; When medium was magnesium oxide, the gap was the 1.0-3.0 millimeter, and the number of turn of telefault is the 5-30 circle; When medium was nylon, the gap was the 1.5-4.0 millimeter, and the number of turn of telefault is the 20-60 circle.
The utlity model has following characteristics: 1, high pressure is introduced structure (double as choking structure), has both sealed electromagnetic field, has avoided the leakage of microwave energy, successfully high pressure is introduced in the microwave cavity again.2, adopt waveguide-coaxial conversion, after connect the magnetic coupling structure, feed-in microwave energy in coaxial cavity simply efficiently.3, a door flow structure is adopted in waveguide-coaxial conversion, and both Transmission Microwave energy in coaxial cavity effectively simultaneously made the degree of coupling adjustable again, and the utilization factor of microwave energy is improved.4, " striking " high voltage mode of being adopted both can be direct current, interchange, also can be radio frequency high tension.5, adopt pulse microwave that conventional high pressure mercerising plasma is modulated, increased the useful area (volume) of plasma on the one hand greatly, strengthen the activity of plasma simultaneously; On the other hand, can control plasma parameter effectively, stop plasma, successfully obtain the low temperature plasma of nonequilibrium state, also improve the utilization factor of microwave energy simultaneously greatly by the sudden change of nonequilibrium state to equilibrium state.6, because whole device adopts coaxial cavity, coaxial cable transmission, have the frequency band of broad, so this Design of device thought can be suitable for metric wave, decimetric wave and centimeter wave (as 2450MHz, 915MHz, 314MHz etc.).When 7, this device busy pressure is in 1.0～1.8atm, can stably work.8, this device can be applicable to gas-phase chemical reaction (as: switching through of natural gas straight system ethene, acetylene, the purification of poisonous and harmful industrial gaseous waste, etc.), chemical vapor deposition (as the deposition of diamond film, etc.).
In a word, the utility model combines conventional high pressure mercerising plasma structure with microwave structure, utilize mercerising plasma microwave reinforced, that expansion is conventional, the volume of conventional mercerising plasma is effectively amplified, pulsed modulation by microwave simultaneously, the parameter of control plasma provides a practicable approach for plasma chemistry is synthetic.
Below by embodiment in detail the utility model is described in detail.
Accompanying drawing 1 pulse microwave reinforced hyperbar low temperature plasma chemical reactor structural representation,
Accompanying drawing 2 waveguides-coaxial conversion magnetic coupling structural representation,
Accompanying drawing 3 waveguides-coaxial change-over gate structural representation,
Accompanying drawing 4 high pressure are introduced structural representation,
Accompanying drawing 5TM
010The cavity resonator structure synoptic diagram.
Embodiment 1
The pulse microwave reinforced low temperature plasma exciting bank that is used for chemical reaction is as shown in the figure mainly introduced the introducing structure of structure, 50Hz ac high-voltage, the TM of band reentry post by waveguide → coaxial microwave
010Three parts such as resonator cavity are formed.Fig. 1 is the structural representation of this device.
Microwave is introduced structure and is adopted waveguide-coaxial conversion, and microwave is carried out the transition to the coaxial cable transmission from rectangular waveguide, and microwave is coupled to TM
010In the chamber.This device adopts magnetic coupling structure and door flow structure to realize waveguide-coaxial conversion, and the size of coaxial transmission inner and outer conductor can be amplified or dwindle as required, but this moment one section transition section must be arranged, to guarantee the impedance matching of transmission line.Fig. 2, Fig. 3 are respectively the structural representations of magnetic coupling structure and door flow structure.
The 50Hz ac high-voltage is introduced structure: introduce the 50Hz ac high-voltage, obtain thread glow plasma in the coaxial cable internal excitation, this is the basic point of departure of this device.Must adopt effective choking structure to the inner hi-line of introducing of microwave cavity, promptly external high pressure can be introduced inside cavity, microwave can be ended again simultaneously, be unlikely to draw cavity.This device is to adopt telefault and electric capacity in conjunction with forming high impedance structures, and its structural representation is seen Fig. 4.
The TM of band reentry post
010Resonator cavity is accumulation energy effectively, and coaxial inner conductor stretches into TM
010The length that resonator cavity is certain, and stretch into length in the cavity by regulating rear end reentry post, decide the resonance frequency of resonator cavity.Its structural representation is seen Fig. 5.
The principle of work of whole device is as follows: waveguide → coaxial transformational structure is transferred to microwave energy in the coaxial cavity, by coaxial cable TM is arrived in microwave transmission again
010Resonator cavity, when on coaxial inner conductor, applying ac high-voltage, and pulse microwave in addition, at this moment, by regulating TM
010The length that reentry post in resonator cavity rear end stretches in the cavity makes its resonance frequency identical with microwave source frequency, can form plasma in the inner wire end.Because coaxial inner conductor is at TM
010Be in the position, axis in the resonator cavity, field intensity around it is radiation and is symmetrically distributed, therefore the plasma that forms in its end also is a radiation regimes, if around inner wire reacting gas is used restraint, the energy that then can effectively utilize plasma promotes chemical reaction." the ignition in hydriding; pulse microwave reinforced; so plasma can be stable is in low temperature plasma away from equilibrium state; when the constraint plasma tagma; the reacting gas plasma activation district that can flow through fully again;, also can be used for chemical vapor deposition (as utilizing rock gas depositing diamond film) because this device employing high pressure so be very suitable for gas-phase chemical reaction (as the direct conversion of rock gas, the purified treatment of poisonous and harmful industrial gaseous waste etc.).
For frequency of operation is the microwave of 2450MHz, and the size of reaction unit is as follows: d
1=4～10mm,
d
2=6～14mm,d
3=20～36mm,d
4=30～50mm,l
1=4～16mm,l
2=2～8mm,
d
5=14～30mm,d
6=20～36mm,d
7=34～40mm,d
8=44～60,
d
9=36～60mm, d
10=90～120mm wherein, bracing frame among Fig. 2 (hold concurrently hermetyic window) is for poly-
Tetrafluoroethene, the magnetic coupling structure is adopted in waveguide-coaxial conversion.
Among embodiment 2 embodiment 1, if the inner wire bracing frame of waveguide-coaxial transformational structure (double as hermetyic window)
During for boron nitride, d
1=4～10mm, d
4=45～80mm.
Among embodiment 3 embodiment 1, if the inner wire bracing frame of waveguide-coaxial transformational structure (double as hermetyic window)
During for aluminium oxide, d
1=4～10mm, d
4=100～176mm.
Among embodiment 4 embodiment 1,, high pressure only adopt capacitance sheet to come by microwave as choking structure if introducing part,
Promptly remove telefault, d
8=60～90mm.
Among embodiment 5 embodiment 1, if the door flow structure is adopted in waveguide-coaxial conversion, device size is as follows:
d
1′=20～40mm,d
2′=10～20mm,d
3′=20～46mm,d
4′=70～100mm。
Claims (6)
1, a kind of pulse microwave reinforced high pressure low temperature plasma chemical reactor is characterized in that: this device is by the TM of waveguide-coaxial conversion (1), coaxial cavity (2), band reentry post
010Resonator cavity (3) connects and composes; The inner wire (21) of coaxial cavity (2) is deep into TM
010In the resonator cavity (3), and introduce structure (22) by high pressure and introduce plasma exciatiaon voltage.
2, by the described pulse microwave reinforced high pressure low temperature plasma chemical reactor of claim 1, it is characterized in that: described high pressure is introduced structure (22) and is inductance and electric capacity composite structure, by external conductive casing (224), two capacitance sheets (221) (223) and telefault (222) constitute, one end of coaxial inner conductor (21) at first links to each other with a capacitance sheet (221), this capacitance sheet (221) constitutes the electric capacity I with the outer conductor of coaxial cable, constitute the electric capacity II between external conductive casing (224) and the capacitance sheet (223), capacitance sheet (221) links to each other by telefault (222) with capacitance sheet (223), because introducing the external conductive casing (224) of structure, the outer conductor of coaxial cable and high pressure join, thereby on circuit, form the electric capacity I and connect structure in parallel with inductance again with the electric capacity II.
3, by the described pulse microwave reinforced high pressure low temperature plasma chemical reactor of claim 2, it is characterized in that: during described capacitor dielectric material selection high purity aluminium oxide, capacitance gap is the 0.2-2 millimeter, and the number of turn of telefault is the 5-20 circle.
4, by the described pulse microwave reinforced high pressure low temperature plasma chemical reactor of claim 2, it is characterized in that: when described capacitor dielectric was tetrafluoroethene, the gap was the 0.2-1.0 millimeter, and the number of turn of telefault is the 10-30 circle.
5, by the described pulse microwave reinforced high pressure low temperature plasma chemical reactor of claim 2, it is characterized in that: when described capacitor dielectric was magnesium oxide, the gap was the 1.0-3.0 millimeter, and the number of turn of telefault is the 5-30 circle.
6, by the described pulse microwave reinforced high pressure low temperature plasma chemical reactor of claim 2, it is characterized in that: when described capacitor dielectric was nylon, the gap was the 1.5-4.0 millimeter, and the number of turn of telefault is the 20-60 circle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00252860 CN2458622Y (en) | 2000-11-15 | 2000-11-15 | Pulse microwave intensified high-voltage low-temp plasma chemical reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00252860 CN2458622Y (en) | 2000-11-15 | 2000-11-15 | Pulse microwave intensified high-voltage low-temp plasma chemical reactor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2458622Y true CN2458622Y (en) | 2001-11-07 |
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ID=33610424
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00252860 Expired - Fee Related CN2458622Y (en) | 2000-11-15 | 2000-11-15 | Pulse microwave intensified high-voltage low-temp plasma chemical reactor |
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| Country | Link |
|---|---|
| CN (1) | CN2458622Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103968882A (en) * | 2014-05-22 | 2014-08-06 | 哈尔滨工业大学 | Test device for mutual action of microwaves and flux-weakening plasma |
| CN102112657B (en) * | 2008-07-16 | 2014-09-03 | 旭硝子欧洲玻璃公司 | Process and installation for depositing films onto a substrate |
-
2000
- 2000-11-15 CN CN 00252860 patent/CN2458622Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102112657B (en) * | 2008-07-16 | 2014-09-03 | 旭硝子欧洲玻璃公司 | Process and installation for depositing films onto a substrate |
| CN103968882A (en) * | 2014-05-22 | 2014-08-06 | 哈尔滨工业大学 | Test device for mutual action of microwaves and flux-weakening plasma |
| CN103968882B (en) * | 2014-05-22 | 2016-05-18 | 哈尔滨工业大学 | Microwave and the interactional testing arrangement of weak magnetopasma |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |