CN2434788Y - LED device - Google Patents
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- CN2434788Y CN2434788Y CN99253653U CN99253653U CN2434788Y CN 2434788 Y CN2434788 Y CN 2434788Y CN 99253653 U CN99253653 U CN 99253653U CN 99253653 U CN99253653 U CN 99253653U CN 2434788 Y CN2434788 Y CN 2434788Y
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Abstract
The utility model relates to a light emitting diode device comprising a semi-conductor stacking structure which is positioned on a main surface of a photic supporting base and comprises a n type gallium nitride III-V compound semi-conductor layer, a p type III-V compound semi-conductor layer adjacent to the n type semi-conductor layer, a first electrode which is contacted with the n type semi-conductor layer, and a second electrode which is contacted with the p type semi-conductor layer. One of the two electrodes has a favorable light reflecting property and favorable action of electric current dispersion. The utility model has the advantage of high light emitting efficiency.
Description
The utility model relates to a kind of light-emitting diode assembly, the light-emitting diode assembly of particularly a kind of gallium nitride (GaN) series, and it has the light-emitting diode assembly of the reflexive crystal covering type gallium nitride of good light (GaN) series for a kind of electrode.
The light-emitting device of gallium nitride (GaN) series comes into one's own owing to can send the light (as blue light, green glow) of particular frequencies.At present, the selection of its substrate is subject to the character of GaN, and substrate is mainly made with following material, as sapphire (sapphire), carborundum (SiC), gallium nitride (GaN), gallium phosphide (GaP) or glass substrate etc.Wherein, Sapphire Substrate is an insulator, so positive and negative two electrode positions of its element must be positioned at the same side of GaN series epitaxial layer, just has the so-called laterally feature of (lateral device) electrode.United States Patent (USP) the 5th, 563, No. 442,5,578, No. 839,5,583, No. 879 oneself the Ⅲ-ⅤZu Huahewubandaoti light-emitting devices that disclose a series of relevant GaN series are the lateral direction element manufacture method of substrate with the sapphire.The light-emitting diode assembly that forms of structure manufacturing thus, as shown in Figure 1, it is fixed on the substrate 11 of LED crystal particle 10 on the conducting bracket (lead frame) 12 earlier, and then positive and negative two electrodes 13 and 14 of crystal grain 10 tops must connect two electrodes of two gold or aluminum conductor 15 and 16 conducting conducting brackets respectively.Yet the line that is positioned at grain surface is with electrode pad 17, dwindles phenomenon with the light and shade inequality because of the meeting shading causes light-emitting area; In addition, though disclosing the metal electrode 13 of a light-permeable, this light-emitting diode assembly improves luminous efficiency in order to the function that scattered current (current spreading) is provided, but because it is thinned to the state of light-permeable, so its lateral resistance is bigger, therefore, the effect of the scattered current that can provide is very limited; Otherwise, owing to itself be positioned on the main light-emitting area, though its light-permeable, but still can reduce luminous efficiency.
United States Patent (USP) the 4th, 476, the light-emitting diode assembly (as shown in Figure 2) of a kind of crystal covering type gallium nitride (GaN) series is disclosed for No. 620, it is that the electrode on the LED crystal particle 21 and 22 directly is attached on the fixed point of conducting bracket (lead frame) 23, and utilizes the light transmission of substrate 24 (as sapphire) itself to make the light of launching can directly pass to the external world.There is no the electrode pad of shading on the main light-emitting area of this kind crystal-coated light-emitting diodes device,, improve luminous efficiency so can increase light-emitting area.Yet, only there is half directly to pass to the external world in the light that the light-emitting diode assembly of the existing crystal covering type gallium nitride of this kind (GaN) series sends by light-transmissive substrates 24, and half light directive electrode (21 and 22) and conducting bracket 23 are arranged approximately, therefore, fail to give full play to its luminous effect.In addition, as United States Patent (USP) the 4th, 476, the light-emitting diode assembly of No. 620 disclosed existing crystal covering type gallium nitride (GaN) series, the function of scattered current (current spreading) is not provided, therefore, only in the position at electrode place illumination effect is preferably arranged, other positions then illumination effect are not good.
The light-emitting diode assembly of gallium nitride (GaN) series that main purpose of the present utility model is to provide a kind of luminous efficiency high.Light-emitting diode assembly of the present utility model is the crystal-coated light-emitting diodes device, so there is not the electrode pad of shading on main light-emitting area; In addition, light-emitting diode assembly of the present utility model has an electrode that has light reflection function and scattered current function concurrently, and it can reflex to the light of directive electrode the light-transmissive substrates direction, and can improve the luminous efficiency of device greatly; In addition, this electrode can have enough thickness and size and can scattered current, makes light-emitting diode give full play to its luminous efficiency.
For the utility model that achieves the above object is taked following measure:
A kind of light-emitting diode assembly of the present utility model comprises:
The semiconductor stacked structure is positioned on the main surface of light-transmissive substrates, stacked structure comprise in abutting connection with main surface-n type gallium nitride Ⅲ-ⅤZu Huahewubandaoti layer; One in abutting connection with the n type semiconductor layer-p type gallium nitride Ⅲ-ⅤZu Huahewubandaoti layer;
One first electrode, it contacts with the n type semiconductor layer;
One second electrode, it contacts with the p type semiconductor layer;
It is characterized in that second electrode has good reflective character, and cover most of outer surface of p type semiconductor layer.
Wherein, described stacked structure also comprises an active layer, and the boundary is between described n type semiconductor layer and p type semiconductor layer.
Wherein, also comprise an insulating protective layer, be coated on side, the part of described first electrode and the part of second electrode all around of the stacked structure that produces at least.
Another kind of light-emitting diode assembly of the present utility model comprises
One light-transmissive substrates;
The semiconductor stacked structure is positioned on the main surface of light-transmissive substrates, stacked structure comprise in abutting connection with main surface-p type gallium nitride Ⅲ-ⅤZu Huahewubandaoti layer and in abutting connection with the p type semiconductor layer-n type gallium nitride Ⅲ-ⅤZu Huahewubandaoti layer;
One first electrode contacts with the n type semiconductor layer;
One second electrode contacts with the p type semiconductor layer;
It is characterized in that; First electrode has good reflective character, and covers most of outer surface of n type semiconductor layer.
Wherein, described stacked structure comprises that more an activation stratum boundary is between described n type semiconductor layer and p type semiconductor layer.
Wherein, also can comprise an insulating protective layer, be coated on side, the part of described first electrode and the part of second electrode all around of described stacked structure at least.
Reaching embodiment in conjunction with the accompanying drawings is described in detail as follows specific structural features of the present utility model:
Description of drawings:
Fig. 1: the schematic cross-section of the light-emitting diode assembly of existing gallium nitride series;
Fig. 2: the schematic cross-section of the light-emitting diode assembly of existing crystal covering type gallium nitride series;
Fig. 3: the schematic cross-section of light-emitting diode embodiment of the present utility model;
The light-emitting diode of Fig. 4: Fig. 3 is to cover the schematic diagram that crystal type is incorporated into a pedestal.
The luminous efficiency height of the light-emitting diode assembly of gallium nitride of the present utility model (GaN) series.Crystal-coated light-emitting diodes device of the present utility model has an electrode that has light reflection function and scattered current function concurrently, and it can reflex to the light-transmissive substrates direction with the light towards electrode and improve the luminous efficiency of device greatly; In addition, this electrode can have enough thickness and size and can play the effect of scattered current, makes light-emitting diode give full play to its luminous efficiency.
As shown in Figure 3, it is the schematic diagram of light emitting diode grain structure among the embodiment of the present utility model, grainiess 30 comprises a light-transmissive substrates 31, its material can be sapphire (sapphire), glass, carborundum (SiC), gallium nitride (GaN), gallium phosphide (GaP) etc., or other transparent materials.The semiconductor stacked structure, be positioned on the main surface of light-transmissive substrates 31, this stacked structure comprise in abutting connection with should main surface-the gallium nitride Ⅲ-ⅤZu Huahewubandaoti layer 32 of n type and in abutting connection with this n type semiconductor layer-the gallium nitride Ⅲ-ⅤZu Huahewubandaoti layer 33 of p type.Among this embodiment, stacked structure comprises that an active layer 34 boundaries are between n type semiconductor layer 32 and p type semiconductor layer 33; In other embodiment of the present utility model, stacked structure can not comprise active layer 34.The manufacture method of this stacked structure is known by industry, so no longer describe in detail.Electrode 35 is arranged in the window that an etching forms, in order to contact n type semiconductor layer 32.Electrode 36 covers the most surfaces of p type semiconductor layer 33, because not special restrictions such as the size of electrode 36 and thickness, so the geometry of electrode 36 and big I are designed to reach the scattered current effect of the best, to improve luminous efficiency; In addition, the material that the optional usefulness of the material of electrode 36 has high reflection efficiency in order to will reflexing to the light-transmissive substrates direction towards the light of electrode 36, and further improves luminous efficiency.
In the utility model, the material of electrode 36 can be the sandwich construction of transparency conducting layer and aluminium (Al) or silver (Ag); In an embodiment of the present utility model, the material of electrode 36 can be the sandwich construction of nickel/gold/titanium/aluminium (Ni/Au/Ti/Al), wherein nickel/gold (Ni/Au) formation one transparent metal layer directly overlays on the p type semiconductor layer 33, forms titanium (Ti) layer and aluminium (Al) layer again on nickel/gold (Ni/Au) layer successively.Electrode 36 must possess low ohm contact resistance and high reflection efficiency.Nickel/gold (Ni/Au) is one of good transparent ohmic contact metal of p type gallium nitride Ⅲ-ⅤZu Huahewubandaoti, aluminium (Al) then is good light reflective metals, but owing to golden and aluminium at high temperature can spread the reflecting effect that destroys aluminium mutually, so the diffusion barrier of utilizing titanium (Ti) conduct gold and aluminium is every (diffusion barrier), and titanium also is a good reflective metals.In other embodiment of the present utility model, the material of electrode 36 can be tin indium oxide/aluminium (ITO/Al), tin indium oxide/silver (ITO/Ag) etc.; Wherein tin indium oxide (ITO) is a transparent conductive body, and its reflecting effect is produced by aluminium or silver.
In different embodiment of the present utility model, can plate a layer insulating 37 on the side and crystal grain 30 surfaces all around of crystal grain 30, its material can be SiO
x, SiN
yDeng, only expose must with the conduction region electrodes in contact part on the pedestal.If the purpose of insulating barrier 37 is to completely cut off the p/n interface in order to protect, and the generation that prevents phenomenons such as conducting resinl conducting, leakage current.
The light emitting diode grain structure that Figure 4 shows that Fig. 3 is to cover the schematic diagram that crystal type is incorporated into a pedestal.Pedestal 40 can be existing conducting bracket, glass supporter, circuit board or thin film circuit etc.As pedestal, can form other light-emitting diode assembly with conducting bracket or glass supporter etc.; As pedestal, can form the light-emitting diode assembly of surface adhering (SMD) with circuit board or thin film circuit etc.Pedestal 40 has conduction region 41 and 42 respectively as positive electrode and negative electrode.With point gum machine electric glue 43 is put positive and negative two electrode positions on pedestal 40 respectively.Moreover, utilize the characteristic of substrate printing opacity, with LED crystal particle 30 do light-transmissive substrates that 180 ° of upsets make crystal grain 30 up, electrode 35 and 36 down, after discerning the correct direction of its positive and negative electrode, electrode 35 is aimed at the conducting resinl 43 of two electrodes on the pedestal with 36, keep flat and be pasted on the pedestal, make the electrode conduction on itself and the pedestal.At last, with suitable temperature baking conducting resinl, promptly finish the making of crystal-coated light-emitting diodes device within the predetermined time.
In this embodiment of light-emitting diode, the light that sends by P-N interface or active layer, half passes to the external world towards the light-transmissive substrates direction approximately, second half is towards electrode 36, because electrode 36 has highly light reflection efficiency, light can be reflexed to the light-transmissive substrates direction, can further improve the luminous efficiency of light-emitting diode.
In other embodiment of the present utility model, can be with the location swap of n type semiconductor layer and p type semiconductor layer, the electrode that cover on the n type semiconductor layer this moment is the electrode that has light reflection function and scattered current function concurrently, and the material of this electrode can be the sandwich construction of transparency conducting layer and aluminium (Al) or silver (Ag); Among the utility model embodiment, the material of this electrode can be titanium/aluminium (Ti/Al), titanium/silver (Ti/Ag), tin indium oxide/aluminium (ITO/Al) or tin indium oxide/silver sandwich constructions such as (ITO/Ag).
Compared with prior art, the utlity model has following effect:
Because in the light-emitting diode assembly of the present utility model, employed electrode has good light reflectivity, it can reflex to the light of directive electrode the light-transmissive substrates direction, so can improve the luminous efficiency of this device greatly; Electrode in the light-emitting diode assembly of the present utility model also has the function of scattered current, and this electrode has enough thickness and size, can play scattered current, and its luminous efficiency is given full play to.
More than narration is to borrow embodiment that architectural feature of the present utility model is described, is not to be used to limit protection range of the present utility model.
Claims (16)
1, a kind of light-emitting diode assembly comprises:
The semiconductor stacked structure is positioned on the main surface of light-transmissive substrates, stacked structure comprise in abutting connection with main surface-n type gallium nitride III-V group compound semiconductor layer; One in abutting connection with the n type semiconductor layer-p type gallium nitride III-V group compound semiconductor layer;
One first electrode, it contacts with the n type semiconductor layer;
One second electrode, it contacts with the p type semiconductor layer;
It is characterized in that second electrode has good reflective character, and cover most of outer surface of p type semiconductor layer.
According to the device of claim 1, it is characterized in that 2, described stacked structure also comprises an active layer, the boundary is between described n type semiconductor layer and p type semiconductor layer.
3, device according to claim 1 and 2 is characterized in that, also comprises an insulating protective layer, is coated on side, the part of described first electrode and the part of second electrode all around of the stacked structure that produces at least.
4, device according to claim 1 and 2 is characterized in that, also comprises:
One pedestal, it has first and second conduction region, is connected with described first and second electrode respectively.
5, device according to claim 4 is characterized in that, described pedestal is one of in conducting bracket, glass supporter, circuit board or the thin film circuit.
6, device according to claim 1 and 2 is characterized in that, described second electrode is the sandwich construction of transparency conducting layer and aluminium.
7, device according to claim 1 and 2 is characterized in that, described second electrode is transparency conducting layer and silver-colored sandwich construction.
8, device according to claim 1 and 2 is characterized in that, described second electrode is one of in the sandwich constructions such as nickel/gold/titanium/aluminium, tin indium oxide/aluminium or tin indium oxide/silver.
9, a kind of light-emitting diode assembly comprises
One light-transmissive substrates;
The semiconductor stacked structure is positioned on the main surface of light-transmissive substrates, stacked structure comprise in abutting connection with main surface-p type gallium nitride Ⅲ-ⅤZu Huahewubandaoti layer and in abutting connection with the p type semiconductor layer-n type gallium nitride Ⅲ-ⅤZu Huahewubandaoti layer;
One first electrode contacts with the n type semiconductor layer;
One second electrode contacts with the p type semiconductor layer;
It is characterized in that; First electrode has good reflective character, and covers most of outer surface of n type semiconductor layer.
10, device according to claim 9 is characterized in that, described stacked structure comprises that more an activation stratum boundary is between described n type semiconductor layer and p type semiconductor layer.
11, according to claim 9 or 10 described devices, it is characterized in that, also comprise an insulating protective layer, be coated on side, the part of described first electrode and the part of second electrode all around of described stacked structure at least.
According to claim 9 or 10 described devices, it is characterized in that 12, also comprise a pedestal, it has first and second conduction region, be connected with described first and second electrode respectively.
13, device according to claim 12 is characterized in that, described pedestal is one of in conducting bracket, glass supporter, circuit board or the thin film circuit.
According to claim 9 or 10 described devices, it is characterized in that 14, described first electrode is the sandwich construction of transparency conducting layer and aluminium.
According to claim 9 or 10 described devices, it is characterized in that 15, described first electrode is transparency conducting layer and silver-colored sandwich construction.
According to claim 9 or 10 described devices, it is characterized in that 16, described first electrode is one of in the sandwich constructions such as titanium/aluminium, titanium/silver, tin indium oxide/aluminium or tin indium oxide/silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN99253653U CN2434788Y (en) | 1999-11-09 | 1999-11-09 | LED device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN99253653U CN2434788Y (en) | 1999-11-09 | 1999-11-09 | LED device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2434788Y true CN2434788Y (en) | 2001-06-13 |
Family
ID=34037498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN99253653U Expired - Lifetime CN2434788Y (en) | 1999-11-09 | 1999-11-09 | LED device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2434788Y (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7973331B2 (en) | 2008-01-08 | 2011-07-05 | Epistar Corporation | Light-emitting device |
| CN102800778A (en) * | 2011-05-27 | 2012-11-28 | 东莞市福地电子材料有限公司 | Light-emitting diode with inverted chip and manufacturing method of light-emitting diode |
| CN101494260B (en) * | 2008-01-23 | 2013-02-13 | 晶元光电股份有限公司 | LED element |
| CN103824923A (en) * | 2012-11-19 | 2014-05-28 | 罗容 | Semiconductor luminous chip, semiconductor illuminating lamp and manufacture method thereof |
| CN102983242B (en) * | 2008-01-23 | 2017-04-26 | 晶元光电股份有限公司 | Light-emitting diode element |
| CN110521010A (en) * | 2019-06-25 | 2019-11-29 | 京东方科技集团股份有限公司 | Light emitting diode and preparation method thereof, display device |
| CN111201620A (en) * | 2019-04-15 | 2020-05-26 | 厦门市三安光电科技有限公司 | Light emitting device and method for manufacturing the same |
-
1999
- 1999-11-09 CN CN99253653U patent/CN2434788Y/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7973331B2 (en) | 2008-01-08 | 2011-07-05 | Epistar Corporation | Light-emitting device |
| US8513699B2 (en) | 2008-01-08 | 2013-08-20 | Epistar Corporation | Light-emitting device |
| CN101494260B (en) * | 2008-01-23 | 2013-02-13 | 晶元光电股份有限公司 | LED element |
| CN102983242B (en) * | 2008-01-23 | 2017-04-26 | 晶元光电股份有限公司 | Light-emitting diode element |
| CN102800778A (en) * | 2011-05-27 | 2012-11-28 | 东莞市福地电子材料有限公司 | Light-emitting diode with inverted chip and manufacturing method of light-emitting diode |
| CN102800778B (en) * | 2011-05-27 | 2015-03-18 | 东莞市福地电子材料有限公司 | Light-emitting diode with inverted chip and manufacturing method of light-emitting diode |
| CN103824923A (en) * | 2012-11-19 | 2014-05-28 | 罗容 | Semiconductor luminous chip, semiconductor illuminating lamp and manufacture method thereof |
| CN103824923B (en) * | 2012-11-19 | 2016-11-09 | 深圳大道半导体有限公司 | A kind of semiconductor luminous chip, semiconductor lamp and manufacture method thereof |
| CN111201620A (en) * | 2019-04-15 | 2020-05-26 | 厦门市三安光电科技有限公司 | Light emitting device and method for manufacturing the same |
| CN111201620B (en) * | 2019-04-15 | 2023-12-12 | 泉州三安半导体科技有限公司 | Light emitting device and manufacturing method thereof |
| CN110521010A (en) * | 2019-06-25 | 2019-11-29 | 京东方科技集团股份有限公司 | Light emitting diode and preparation method thereof, display device |
| US11870011B2 (en) | 2019-06-25 | 2024-01-09 | Beijing Boe Technology Development Co., Ltd. | Light-emitting diode and method of manufacturing the same, and display device |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |