CN102983242B - Light-emitting diode element - Google Patents
Light-emitting diode element Download PDFInfo
- Publication number
- CN102983242B CN102983242B CN201210570399.8A CN201210570399A CN102983242B CN 102983242 B CN102983242 B CN 102983242B CN 201210570399 A CN201210570399 A CN 201210570399A CN 102983242 B CN102983242 B CN 102983242B
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- Prior art keywords
- light
- emitting diode
- semiconductor layer
- type semiconductor
- semiconductor structure
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light-emitting diode element. The light-emitting diode element comprises a semiconductor structure, a light emitting area and a first wire, wherein the semiconductor structure is provided with a Type I semiconductor layer and a Type II semiconductor layer; the light emitting area is provided with a first oblique side wall, a first surface close to the semiconductor structure and a second surface away from the semiconductor structure; and the first wire is located on the first oblique side wall, and electrically connected with the Type I semiconductor layer. According to the light-emitting diode element, the purposes of reducing a packaging size and simplifying a packaging technology of the light-emitting diode element are achieved; and the luminous efficiency of the light-emitting diode element is improved.
Description
The application is that the Application No. 200810008548.5, applying date is on January 23rd, 2008, the artificial wafer photoelectricity of application
Limited company, the divisional application of the Chinese invention patent application of entitled " light-emitting diode ".
Technical field
The present invention relates to a kind of light-emitting component, more particularly to a kind of light-emitting diode.
Background technology
Light emitting diode (LED) has the advantages that power saving, switching speed are fast, and application is more and more extensive.Adopt after high-order mobile phone
With light emitting diode when the backlight after, various kinds hand-held electronic product is also inclined to and adopts LED.It is light to meet hand-held electronic product
How thin short and small demand, save encapsulated space and cost during LED package, becomes the center of gravity of light emitting diode
It is located.
Generally a light emitting diode tube core can divide into (face up) kenel and flip (flip chip) kenel on face, and
And and other elements, for example, package carrier or circuit board, combine to form light-emitting device (light-emitting
apparatus).Fig. 4 is known light-emitting device schematic diagram, as shown in figure 4, light-emitting device 600 includes time carrier (sub-mount)
60；Solder 62 (solder) is located on above-mentioned carrier 60；And electric connection structure 64.LED core 400 is included
Substrate 58, semiconductor epitaxial lamination 54 is located on substrate 58, and electrode 56 is located on semiconductor epitaxial lamination 54；And second electrode
66 are located at the lower section of substrate 58.LED core 400 is adhesively fixed light-emittingdiode crystal grain 400 in secondary load by solder 62
On body 60, and the first electrode 56 and second electrode 66 of light-emittingdiode crystal grain 400 respectively with electric connection structure 64 and secondary
Carrier 60 is electrically connected.Except above-mentioned secondary carrier 60, package carrier can also be lead frame (lead frame) or electricity
Line structure inlays carrier (mountingcarrier), and its radiating is planned and improved with the circuit for facilitating the light-emitting device to be formed
Effect.So heavy encapsulating material stacking, makes LED encapsulation body be not easy to meet compact demand, also improves material
The degree of difficulty matched between material.Therefore pole needs a kind of technology, can reduce light-emitting diode package dimension and simplify encapsulation work
Skill.
The content of the invention
To solve the above problems, the present invention reaches diminution light-emitting diode envelope by wafer level chip encapsulation technology
Dress size and the purpose for simplifying packaging technology, while lifting light-emitting diode light extraction efficiency.
According to the present invention, light-emitting diode includes：Semiconductor structure, with the first type semiconductor layer and Second-Type half
Conductor layer；Output optical zone, with the first oblique side wall, near the first face of the semiconductor structure and away from the of the semiconductor structure
Two faces；And first wire, on the first oblique side wall, and it is electrically connected to first type semiconductor layer.
The present invention provides a kind of light-emitting diode in an embodiment, including with lower unit：Substrate have electric conductivity and
Including hole；On the first face of substrate, wherein patterned semiconductor structure at least includes the to patterned semiconductor structure setting
One type semiconductor layer, active layer and the second type semiconductor layer；First welded gasket and the second welded gasket are arranged at the second face of substrate
On；Wire passes through hole, is electrically connected with first type semiconductor layer and the first welded gasket of semiconductor structure；Insulating barrier at least provided with
On the side wall of hole, completely cut off wire and substrate.
The present invention discloses a kind of light-emitting diode, including unit in another embodiment：Substrate at least has first to incline
Oblique side wall；At least provided with the first face of substrate, wherein semiconductor structure at least includes the first type to patterned semiconductor structure
Semiconductor layer, active layer and the second type semiconductor layer；First wire electrically connects at least provided with the first sloped sidewall of substrate
Connect the first type semiconductor layer of graphical semiconductor structure.
Description of the drawings
Figure 1A ~ Fig. 1 H describe the packaging technology of one embodiment of the invention light-emitting diode.
Fig. 2A ~ Fig. 2 E describe the packaging technology of another embodiment of the present invention light-emitting diode.
Fig. 3 shows the profile of another embodiment of the present invention surface adhesion type light-emitting diode element.
Fig. 4 is known luminous device structure schematic diagram.
Description of reference numerals
100 ~ surface adhesion type light-emitting diode, 102 ~ chip of element
The face of 104 ~ the first face 106 ~ the second
The type semiconductor layer of 108 ~ hole 110 ~ the second
The type semiconductor layer of 112 ~ active layer 114 ~ the first
116 ~ semiconductor structure layer, 117 ~ electric conductivity bonding layer
118 ~ patterned semiconductor, 120 ~ insulating barrier of structure
122 ~ electrode, 124 ~ wire
The welded gasket of 126 ~ glue material 128 ~ the first
130 ~ the second 132 ~ substrates of welded gasket
The face of 200 ~ surface adhesion type light-emitting diode element 201 ~ the first
The face of 202 ~ chip 203 ~ the second
204 ~ the first 206 ~ active layers of type semiconductor layer
208 ~ the second 210 ~ semiconductor structure layers of type semiconductor layer
212 ~ patterned semiconductor structure 214 ~ Second-Type electrode
216 ~ the first type 218 ~ substrates of electrode
The sloped sidewall of 220 ~ the first sloped sidewall 222 ~ the second
The sloped sidewall of 224 ~ the 3rd sloped sidewall the 226 ~ the 4th
The wire of 228 ~ the second wire 230 ~ the first
The welded gasket of 232 ~ the second welded gasket 234 ~ the first
300 ~ surface adhesion type light-emitting diode, 302 ~ circuit board of element
The joint sheet of 304 ~ the second joint sheet 306 ~ the first
308 ~ scolding tin, 400 ~ LED core；
600 ~ light-emitting device；54 ~ semiconductor epitaxial lamination；
56 ~ first electrode；58 ~ substrate；
60 ~ secondary carrier；62 ~ solder；
64 ~ electric connection structure；66 ~ second electrode.
Specific embodiment
The present invention encapsulates (wafer level chip scale package, WLCSP) technology using wafer level chip, enters
The packaging technology of row light-emitting diode, although in IC package field, row has year, but its emphasis for wafer level chip encapsulation
It is reliability after circuit layout and IC system combinations again, with light-emitting diode optical packaging material and die separation
Consider difference.
Hereinafter coordinate Figure 1A ~ Fig. 1 G to describe one embodiment of the invention with wafer level chip encapsulation technology, carry out light-emitting diodes
The technique of tube elements encapsulation.First, refer to Figure 1A, there is provided chip 102, including the first face 104 and the second face 106.This enforcement
Example chip 102 is silicon wafer, and silicon wafer adulterates the impurity of such as phosphorus or boron, and to improve its conductance, the present invention does not limit crystalline substance
The composition of piece, it can also be the material composition of other tool good electrical conductive properties.Figure 1B is refer to, with laser in chip 102
Form multiple holes 108.Fig. 1 C are refer to, semiconductor structure layer 116 is engaged in into chip 102 using electric conductivity bonding layer 117
On, then sapphire (sapphire) substrate (not illustrating) is removed.The semiconductor structure layer 116 of the present embodiment at least includes buffering
Layer (not illustrating), the first type semiconductor layer 114, the type semiconductor layer 110 of active layer 112 and second.In the present embodiment, the first type
Semiconductor layer 114 is N-shaped gallium nitride (n-GaN) layer, and active layer 112 is InGaN (InGaN)/gallium nitride (GaN) Multiple-quantum
Well structure layer, the second type semiconductor layer 110 is p-type gallium nitride (p-GaN) layer, and this semiconductor structure layer is with epitaxy technology shape
Into on sapphire.Fig. 1 D are refer to, semiconductor structure layer is defined with gold-tinted photoetching and etch process, it is multiple graphical to be formed
Semiconductor structure 118.Fig. 1 E are refer to, in patterned semiconductor structure 118, the first plane 104 of chip 102 and the second plane
The insulating barrier 120 of such as a silica or silicon nitride is formed on 106 and on the side wall of hole 108, it is notable that part
Second face 106 of patterned semiconductor structure sheaf 118 and chip 102 is not covered by insulating barrier 120, so that subsequent technique carries out electricity
Property connection.
Fig. 1 F are refer to, using plating or plated film related process in the first type semiconductor of patterned semiconductor structure 118
Electrode 122 is made on layer 114, and the first welded gasket 128 and the second welded gasket 130 are made in second face 106 of chip 102.System
Make through hole 108 wire 124, be electrically connected with the welded gasket 128 of electrode 122 and first, wherein insulating barrier 120 by electrode 122,
The welded gasket 128 of wire 124 and first completely cuts off with the chip 102 of tool electric conductivity.Subsequently, glue material 126, for example, epoxy resin are formed
(Epoxy) cover graphics semiconductor structure layer 118, wire 124 and electrode 122.
Fig. 1 G are refer to, cutting technique is carried out, the multiple substrates 132 of 102 one-tenth of cut crystal form multiple adhesive surfaces
(surface-mount) type light-emitting diode, for simplicity, only illustrates the pole of surface adhesion type light-emitting two in this figure
Tube elements 100, it is notable that the light-emitting diode of the present embodiment is vertical LED.Graphically partly lead
The first type semiconductor layer 114 in body structure 118 is electrically connected with the via electrode 122 and through the wire 124 of the hole of substrate 132
One type welded gasket 128, the second type semiconductor layer 110 is electrically connected with the via the substrate 132 of electric conductivity bonding layer 117 and electric conductivity
Two type welded gaskets 130.Fig. 1 H show the plan of Fig. 1 G, as illustrated, the face of the patterned semiconductor structure 118 of the present embodiment
Product is little compared with the area of substrate 132, and figure can be again reflected back by substrate when the light produced by light emitting diode is downwardly toward substrate
Change semiconductor structure, now most of light can be absorbed when MQW.But it is not patterned immediately semiconductor structure in substrate
The region of covering, light of its reflection again through MQW, and will not have an opportunity to go out light from substrate side, therefore can increase and light
Efficiency.
The surface adhesion type light-emitting diode element (SMD LED) of the present embodiment possesses small volume, is adapted to automated production
Advantage, can reach the purpose for reducing light-emitting diode package dimension with simplifying packaging technology, and can be in response to of all kinds
The compact demand of hand-held electronic product.
Hereinafter coordinate Fig. 2A ~ Fig. 2 D to describe another embodiment of the present invention with wafer level chip encapsulation technology, carry out luminous two
The technique of pole pipe component encapsulation.First, refer to Fig. 2A, there is provided chip 202, including the first face 201 and the second face 203, this reality
A chip 202 is applied for sapphire.Then, cushion is sequentially formed with epitaxy technique on the first face 201 of sapphire wafer 202
(not illustrating), the first type semiconductor layer 204, such as N-shaped gallium nitride (n-GaN), active layer 206, such as InGaN/gallium nitride
Multi-quantum pit structure and the second type semiconductor layer 208, such as p-type gallium nitride (p-GaN), for convenience, the present embodiment will be upper
The combination for stating epitaxial layer is referred to as semiconductor structure layer 210.
Fig. 2 B are refer to, semiconductor structure layer 210 is defined with gold-tinted photoetching and etch process, formation is multiple graphically partly to be led
Body structure 212.Fig. 2 C are refer to, etching part semiconductor structure layer is subsequently formed second to the first type semiconductor layer 204 is exposed
In the second type semiconductor layer 208, formation first electrode 216 is in exposed first type semiconductor layer 204 for electrode 214.
Fig. 2 D and Fig. 2 E are refer to, wherein Fig. 2 E are the plan of Fig. 2 D, and display carries out chip 202 after cutting technique,
Multiple substrates 218 are formed, to form multiple adhesive surfaces (surface-mount) type light-emitting diode.Rise in order to succinct
See, surface adhesion type light-emitting diode element 200 is only illustrated in this figure.Substrate 218 is cut out into the first inclination using laser
Side wall 220, the second sloped sidewall 222, the 3rd sloped sidewall 224 and the 4th sloped sidewall 226, with increase light-emitting component light is gone out
Efficiency.Angle between the sloped sidewall 220,222,224 and 226 of the present embodiment and the first face 201 of substrate 218 or the second face 203
Preferably 15 ~ 75 degree of degree.The second welded gasket 232 and the first welded gasket 234 are formed on the second face 203 of substrate 218.In substrate
The second wire 228 is formed on 218 the first sloped sidewall 220 and the first face 201, in the He of the second sloped sidewall 222 of substrate 218
The first wire 230 is formed on first face 201, the welded gasket 232 of second electrode 214 and second is electrically connected via the second wire 228
Connect, via the first wire 230, be electrically connected with the welded gasket 234 of first electrode 216 and first.In the present embodiment, adhesive surface
Type light-emitting diode 200 is horizontal, and the type electrode 216 of Second-Type electrode 214 and first is located at the same side of substrate 218.
As shown in Figure 2 E, the area of the patterned semiconductor structure 212 of the present embodiment is little compared with the area of substrate 218, when send out
Light produced by optical diode can again be reflected back patterned semiconductor downwardly toward during substrate by the welded gasket below substrate
Structure, now most of light can be absorbed when MQW.But it is not patterned immediately the area of semiconductor structure covering in substrate
Domain, the light of its reflection again through MQW, and will not have an opportunity to go out light from substrate side, therefore can increase light extraction efficiency.
Fig. 3 shows the profile of another embodiment of the present invention surface adhesion type light-emitting diode element 300, the present embodiment and
The difference of Fig. 2 D embodiment light-emitting components is that the present embodiment omits the first welded gasket and the second welded gasket.For convenience, originally
The embodiment unit similar with above-described embodiment adopts identical label.As illustrated, the substrate 218 of the present embodiment light-emitting component
Directly contact circuit board 302 and the second joint sheet 304 thereon and the first joint sheet 306.According to the present embodiment sloped sidewall
Design, scolding tin 308 can climb up the first sloped sidewall 220 and the second sloped sidewall 222, thus, the second joint sheet of circuit board 302
304 and first joint sheet 306 directly via scolding tin 308 can be electrically connected with surface adhesion type light-emitting diode element 300
Second wire 228 and the first wire 230.The surface adhesion type light-emitting diode element 300 of the present embodiment is because omitting welded gasket, work
Skill is simpler, and scolding tin 308 climbs up the first sloped sidewall 220 and the second sloped sidewall 222, it is possible to provide surface adhesion type light-emitting two
Enough bond strengths between pole pipe element 300 and circuit board 302, thus enough thrust can be born.
The light-emitting diode of the above embodiment of the present invention has the advantage that：By wafer level chip encapsulation technology, can
Light-emitting diode package dimension is reduced, and simplifies packaging technology, and the above embodiment of the present invention reduces light emitting epitaxial layer
Area, thus lift light-emitting diode light extraction efficiency.
Examples provided above is to describe the different technical characteristic of the present invention, but concept of the invention, its
May include or apply to wider technical scope.It is noted that embodiment is only to disclose present invention process, device, group
Into, the ad hoc approach that manufactures and use, not to limit the present invention, those skilled in the art are in the spirit without departing from the present invention
In scope, when can make a little change with retouching.Therefore, protection scope of the present invention, when regarding appended claims institute circle
Fixed is defined.
Claims (9)
1. a kind of light-emitting diode, including：
Semiconductor structure, with the first type semiconductor layer and the second type semiconductor layer；
Output optical zone, near the first face of the semiconductor structure, the second face away from the semiconductor structure and positioned at this
The first oblique side wall simultaneously and between second face；And
First wire, is electrically connected to first type semiconductor layer；
First electrode, in first type semiconductor layer and is electrically connected to first type semiconductor layer；
First welded gasket, is electrically connected to first type semiconductor layer, and on second face；The wherein Second-Type semiconductor
Layer between first type semiconductor layer and the output optical zone, the semiconductor structure and the output optical zone be located at the first electrode with
And between first welded gasket, first wire connects first welded gasket along the first face top and the first oblique side wall；
Wherein the semiconductor structure is formed with epitaxy technique from the output optical zone.
2. between light-emitting diode as claimed in claim 1, the wherein first oblique side wall and first face or second face
Angle be 15～75 degree.
3. light-emitting diode as claimed in claim 2, it further includes scolding tin on the first oblique side wall.
4. light-emitting diode as claimed in claim 2, the wherein output optical zone have the relative to the first oblique side wall
Two oblique side walls.
5. light-emitting diode as claimed in claim 4, also includes：
Second wire, on the second oblique side wall, and is electrically connected to second type semiconductor layer.
6. light-emitting diode as claimed in claim 1, also including second electrode, the second electrode be electrically connected to this
Two type semiconductor layers.
7. light-emitting diode as claimed in claim 3, wherein first wire extends to the side wall of the semiconductor structure
And be connected with first welded gasket and the first electrode.
8. light-emitting diode as claimed in claim 3, wherein first wire extends to the side wall of the semiconductor structure.
9. light-emitting diode as claimed in claim 1, also includes：
Second welded gasket, is electrically connected to second type semiconductor layer, and on second face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210570399.8A CN102983242B (en) | 2008-01-23 | 2008-01-23 | Light-emitting diode element |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210570399.8A CN102983242B (en) | 2008-01-23 | 2008-01-23 | Light-emitting diode element |
| CN 200810008548 CN101494260B (en) | 2008-01-23 | 2008-01-23 | LED element |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200810008548 Division CN101494260B (en) | 2008-01-23 | 2008-01-23 | LED element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102983242A CN102983242A (en) | 2013-03-20 |
| CN102983242B true CN102983242B (en) | 2017-04-26 |
Family
ID=47857096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210570399.8A Active CN102983242B (en) | 2008-01-23 | 2008-01-23 | Light-emitting diode element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102983242B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2434788Y (en) * | 1999-11-09 | 2001-06-13 | 洲磊科技股份有限公司 | LED device |
| CN1127152C (en) * | 1995-06-02 | 2003-11-05 | 斯坦雷电气株式会社 | Surface mounting type light emitting diode |
-
2008
- 2008-01-23 CN CN201210570399.8A patent/CN102983242B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1127152C (en) * | 1995-06-02 | 2003-11-05 | 斯坦雷电气株式会社 | Surface mounting type light emitting diode |
| CN2434788Y (en) * | 1999-11-09 | 2001-06-13 | 洲磊科技股份有限公司 | LED device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102983242A (en) | 2013-03-20 |
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