CN2400802Y - Multi-layer electrode plate for computer controlled fault scanner - Google Patents
Multi-layer electrode plate for computer controlled fault scanner Download PDFInfo
- Publication number
- CN2400802Y CN2400802Y CN 99250694 CN99250694U CN2400802Y CN 2400802 Y CN2400802 Y CN 2400802Y CN 99250694 CN99250694 CN 99250694 CN 99250694 U CN99250694 U CN 99250694U CN 2400802 Y CN2400802 Y CN 2400802Y
- Authority
- CN
- China
- Prior art keywords
- layer
- thickness
- insulation course
- electrode plate
- metal conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 67
- 239000002184 metal Substances 0.000 claims abstract description 67
- 238000009413 insulation Methods 0.000 claims description 45
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 14
- 238000005282 brightening Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 11
- 239000004020 conductor Substances 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 9
- 238000007733 ion plating Methods 0.000 description 9
- 229910017083 AlN Inorganic materials 0.000 description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 230000002194 synthesizing effect Effects 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 229940113088 dimethylacetamide Drugs 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920005575 poly(amic acid) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 235000013824 polyphenols Nutrition 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- ZKDNBOAOTQCXLM-UHFFFAOYSA-N 2,3-dihydroxybutanedioic acid;potassium;sodium Chemical compound [Na].[K].OC(=O)C(O)C(O)C(O)=O ZKDNBOAOTQCXLM-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 229960002449 glycine Drugs 0.000 description 1
- 235000013905 glycine and its sodium salt Nutrition 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- -1 phenolic aldehyde Chemical class 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Landscapes
- Prevention Of Electric Corrosion (AREA)
Abstract
The utility model relates to a multi-layer electrode plate for a computer-control fault scanner. The utility model is characterized in that the multi-layer electrode plate is composed of insulating layers which are coated at both surfaces of a cathode-metal conductive basal-body layer and anode-metal conductive layers which are coated at the outer sides of the insulating layers. The thickness of the insulating layers is 5 to 100 mu m, the thickness of the anode-metal conductive layers is 0.2 to 50 mu m, and the total thickness of electrodes is between 0.18 to 0.26 mm. The utility model can enhance obviously the image quality of a CT machine, and has the advantages of good electrode quality, simple manufacturing process, convenient operation and high yield.
Description
The utility model provides a kind of multi-layer electrode plate, it is applicable to that the multiple detecting device of preparation is with signal electrode plate more than three layers, the five layer signal battery lead plates of forming by anode metal conductive layer+insulation course+cathodic metal conducting base+insulation course+anode metal conductive layer of making particularly that CT machine testing device uses, CT machine image quality be can improve, spatial resolution and density resolution promptly improved.
Industrial and medical computer control tomography X-ray scanner (CT machine) is three layers of pole plate with the present generally use of battery lead plate, the detecting device of being made by it is used for the CT machine, then image quality (spatial resolution, density resolution) is not good enough, be head it off, the battery lead plate that a kind of multilayer occurred, it is in layer piled up glued together with bonding agent by three-layer metal thin slice and two-layer organic insulation film, practical structure is nine layers of structure electrode of sheet metal-adhesive linkage-insulation film-adhesive linkage-sheet metal-adhesive linkage-insulation film-adhesive linkage-sheet metal.This gluing method that connects is made battery lead plate except that complex process, throughput rate are hanged down, bubbling between also normal appearance layer and the layer in the gluing product process of delivering a child, it is smooth that electrode plate surface is difficult to, and the gross thickness of five layers of battery lead plate also be difficult to do thin, these defectives have a strong impact on the image quality of CT machine.
The purpose of this utility model is to provide a kind of multi-layer electrode plate for CT scanner, and this electrode is best in quality, can significantly improve the image quality of CT machine, and technology is simple, and is easy to operate, the yield rate height.
The utility model provides a kind of multi-layer electrode plate for CT scanner, it is characterized in that: this multi-layer electrode plate is by the coated on both sides insulation course of cathodic metal conducting base layer, and the insulation course outside is being covered the anode metal conductive layer and constituted; The thickness of described insulation course is 5～100 μ m, and the anode metal conductive layer thickness is 0.2～50 μ m, and the gross thickness of electrode is between 0.18～0.26mm.
Conducting base layer of cathodic metal described in the utility model and anode metal conductive layer are simple metal or alloy, and insulation course is polyimide, polyamidoimide, epoxide modified polyamidoimide, epoxy resin, epoxy polyester, epoxy polyester phenolic aldehyde, phenolics, organic siliconresin, polyester modified organic silicon, epoxy modified silicone, silicon nitride, aluminium nitride, monox, aluminium oxide etc.
The battery lead plate that the utility model provides can improve the spatial resolution and the density resolution of CT machine effectively, thereby improve the image quality of CT machine greatly owing to thinner thickness.
Physical vapour deposition (PVD) among the preparation method of the multi-layer electrode plate for CT scanner that the utility model provides, technological parameter is:
Partial pressure 1 * 10
-2～1 * 10
-1Pa
Power 0.5～50KW
20～300 ℃ of temperature.
The preparation method of concrete insulation course has following several:
(1) synthesizing concentration is 10～70%, viscosity is 10～90 seconds insulating material solution, with spray gun insulating material solution is evenly sprayed to cathodic metal electric conductor two surfaces, 50～350 ℃ of insulations obtained in 1～6 hour bright, smooth, in conjunction with firm, the uniform insulation course of thickness;
(2) synthesizing concentration is 10～70%, viscosity is 10～90 seconds insulating material solution, with hairbrush insulating material solution is brushed cathodic metal conducting base two surfaces, 50～350 ℃ of insulations obtained in 1～6 hour bright, smooth, in conjunction with firm, the uniform insulation course of thickness;
(3) synthesizing concentration is 10～70%, viscosity is 10～90 seconds insulating material solution, the cathodic metal electric conductor is impregnated in the insulating material solution, the cathodic metal electric conductor is lifted out liquid level, insulating material is by being adsorbed onto cathodic metal electric conductor surface from profit, 50～350 ℃ of insulations obtained in 1～6 hour bright, smooth, in conjunction with firm, the uniform insulation course of thickness;
(4) adopt sputtering method that insulating material is deposited to cathodic metal electric conductor two surfaces, obtained surface-brightening, smooth, in conjunction with firmly, the uniform insulation course of thickness;
(5) adopt ion plating method that insulating material is deposited to cathodic metal electric conductor two surfaces, obtained surface-brightening, smooth, in conjunction with firmly, the uniform insulation course of thickness.
The preparation method of concrete anode metal conductive layer has following several:
(1) after the cathodic metal conducting base is coated with insulating layer coating, adopt electro-deposition at surface of insulating layer deposition anode metal conducting layer, the material of electro-deposition anode metal conductive layer is simple metal or alloy;
(2) after the cathodic metal conducting base is coated with insulating layer coating, adopt chemogenic deposit at surface of insulating layer deposition anode metal conducting layer, the material of chemogenic deposit anode metal conductive layer is simple metal or alloy;
(3) after the cathodic metal conducting base is coated with insulating layer coating, adopt sputtering method at surface of insulating layer deposition anode metal conducting layer, the material of sputtering sedimentation anode metal conductive layer is simple metal or alloy;
(4) after the cathodic metal conducting base is coated with insulating layer coating, adopt ion plating method at surface of insulating layer deposition anode metal conducting layer, the material of ion-plating deposition anode metal conductive layer is simple metal or alloy.
Method provided by the utility model is the combination of routine techniques, and technology is simple, and is easy to operate, the excellent product quality of being produced.
Below by embodiment in detail the utility model is described in detail.
Accompanying drawing 1 is the multi-layer electrode structure synoptic diagram.
Embodiment 1
(1) with the dimethyl acetamide is solvent, by 4,4 '-the synthetic viscosity of benzidine ether and pyromellitic acid anhydride is 15 seconds, concentration is 10% polyamic acid solution, with spray gun polyamic acid solution is sprayed onto cathodic metal conducting base two surfaces equably, puts into drying chamber, in 350 ℃ of insulations acquisition in 1 hour polyimide insulative layer as shown in Figure 1, thickness of insulating layer is 38 μ m, and insulation course combines firmly with the cathodic metal conducting base, surface-brightening, smooth, thickness is even.
(2) electricity consumption is deposited on deposited copper anode metal conductive layer on the insulation course, and electrodeposition technology is: current density 1A/dm
2, 35 ℃ of temperature, pH is 8.3, acid copper is bathed composed as follows:
Cupric pyrophosphate 0.26 mol
Potassium pyrophosphate 0.26 mol
Nitrilotriacetic acid 0.078 mol
Tartaric acid potassium sodium 0.1 mol
2.5 milliliters/liter of ammoniacal liquor
Electro-deposition has obtained copper anode metal conducting layer as shown in Figure 1 on insulation course, and copper layer thickness is 13.0 μ m, and the copper layer combines with insulation course firmly, surface-brightening, smooth, thickness is even.
Embodiment 2
(1) method for fabricating insulating layer is with embodiment 1.
(2) with chemogenic deposit nickel deposited anode metal conductive layer on insulation course, chemical deposition process is: 88 ℃ of bath temperatures, pH are 5, and chemogenic deposit is bathed composed as follows:
Nickelous sulfate 0.1 mol
Inferior sodium phosphate 0.2 mol
Sodium acetate 0.13 mol
F-7 increases whole dose 20 grams per liter
(it consists of: succinic acid, aminoacetic acid, lactic mixt)
Obtained as shown in Figure 1 nickel sun sheetmetal conductive layer with chemogenic deposit in insulation, nickel layer thickness is 15 μ m, and the nickel anode metal conducting layer combines with insulation course firmly, surface-brightening, smooth, thickness is even.
(1) by 4,4 '-diaminodiphenyl ether and 1,2,4-trimellitic acid acyl chlorides synthesizes concentration in dimethyl acetamide and xylene solvent be 20%, viscosity is 60 seconds polyamide-imides carboxylic acid solution, with hairbrush polyamidoimide solution is brushed to as shown in Figure 1 cathodic metal conducting base two surfaces equably, put into hothouse, 350 ℃ of insulations 1 hour, obtain polyamidoimide insulation course as shown in Figure 1, thickness of insulating layer is 50 μ m, and insulation course combines firmly with the cathodic metal electric conductor, surface-brightening, smooth, thickness is even.
(2) with sputtering at surface of insulating layer deposition of tantalum anode metal conductive layer, sputtering technology is:
Partial pressure 6 * 10
-1Pa
Power 3KVA
200 ℃ of temperature
Obtained tantalum anode metal conducting layer as shown in Figure 1 with sputtering method on insulation course, tantalum layer thickness is 3 μ m, and tantalum metal layer combines with insulation course firmly, surface-brightening, smooth, thickness is even.
Embodiment 4
(1) with dimethylbenzene is solvent, being mixed with concentration by organic siliconresin is 50%, viscosity is 30 seconds organic silicon solution, promote the cathodic metal conductor after immersing the cathodic metal electric conductor in the organic silicon solution and go out liquid level, put into hothouse, 160 ℃ of insulations 60 minutes, obtained organic silicon insulation layer as shown in Figure 1, thickness of insulating layer is 35 μ m, and insulation course and cathodic metal electric conductor surface combination are firm, surface-brightening, smooth, thickness is even.
(2) at surface of insulating layer ion-plating deposition aluminium anode metal conducting layer, ion plating is:
Partial pressure 4 * 10
-1Pa
Power 13KVA
300 ℃ of temperature
Obtained aluminium anode metal conducting layer as shown in Figure 1 with ion-plating deposition on insulation course, aluminum layer thickness is 10 μ m, and the aluminium anode metal conducting layer combines with insulation course firmly, surface-brightening, smooth, thickness is even.
Embodiment 5
(1) employing sputters at cathodic metal conducting base two surface deposition aluminium oxide (Al
2O
3), obtaining alumina insulating layer as shown in Figure 1, sputtering technology is:
Partial pressure 5 * 10
-1Pa
Power 5KVA
260 ℃ of temperature
Sputtering at the alumina insulation layer thicknesses that cathodic metal conducting base two surface obtains is 3 μ m, and alumina insulating layer combines firmly with the negative electrode conducting base, surface-brightening, smooth, thickness is even.
(2) with sputtering method depositing silver anode metal conductive layer on alumina insulating layer, sputtering technology is:
Partial pressure 4 * 10
-1Pa
Power 4.5KVA
200 ℃ of temperature
Obtained silver anode metal conducting layer as shown in Figure 1 with sputtering sedimentation on alumina insulating layer, the silver metal layer thickness is 10 μ m, and the silver anode metal conducting layer combines with alumina insulating layer firmly, surface-brightening, smooth, thickness is even.
Embodiment 6
(1) use ion plating method at cathodic metal conducting base two surface deposition aluminium nitride, obtain aluminium nitride insulation course as shown in Figure 1, ion plating is:
Partial pressure 5 * 10
-1Pa
Power 15KVA
300 ℃ of temperature
The aluminium nitride thickness of insulating layer that obtains on the cathodic metal conducting base with ion plating is 5 μ m, and aluminium nitride insulation course and cathodic metal conducting base surface combination are firm, surface-brightening, smooth, thickness is even.
(2) with sputtering method deposited gold anode metal conductive layer on the aluminium nitride insulation course, sputtering technology is:
Partial pressure 4.5 * 10
-1Pa
Power 4KVA
270 ℃ of temperature
Obtained gold anode metal conducting layer as shown in Figure 1 with sputtering sedimentation on the aluminium nitride insulation course, golden layer thickness is 14 μ m, and gold layer combines firmly with the aluminium nitride insulation course, surface-brightening, smooth, thickness is even.
Claims (1)
1. multi-layer electrode plate for CT scanner is characterized in that: this multi-layer electrode plate is by the coated on both sides insulation course (2) of cathodic metal conducting base layer (1), and insulation course (2) outside is being covered anode metal conductive layer (3) and constituted; The thickness of described insulation course (2) is 5～100 μ m, and anode metal conductive layer (3) thickness is 0.2～50 μ m, and the gross thickness of electrode is between 0.18～0.26mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99250694 CN2400802Y (en) | 1999-12-17 | 1999-12-17 | Multi-layer electrode plate for computer controlled fault scanner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99250694 CN2400802Y (en) | 1999-12-17 | 1999-12-17 | Multi-layer electrode plate for computer controlled fault scanner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2400802Y true CN2400802Y (en) | 2000-10-11 |
Family
ID=34035382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 99250694 Expired - Fee Related CN2400802Y (en) | 1999-12-17 | 1999-12-17 | Multi-layer electrode plate for computer controlled fault scanner |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2400802Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103173727A (en) * | 2011-12-22 | 2013-06-26 | 辽宁法库陶瓷工程技术研究中心 | Preparation method of high-heat-conduction aluminum nitride thick film |
-
1999
- 1999-12-17 CN CN 99250694 patent/CN2400802Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103173727A (en) * | 2011-12-22 | 2013-06-26 | 辽宁法库陶瓷工程技术研究中心 | Preparation method of high-heat-conduction aluminum nitride thick film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1246504C (en) | Apparatus and method for electrolytically depositing copper on semiconductor workpiece | |
| CN103526235B (en) | A kind of titanium/graphene/oxide combination electrode | |
| US11655554B2 (en) | Method for preparing electrode of inductive component | |
| CN1280851C (en) | Electronic component with external terminal electrode and its manufacturing method | |
| CN1669788A (en) | Metallized polyimide film | |
| CN1113111C (en) | Copper foil for printed wiring board, its producing method and electrolytic device | |
| CN1288946C (en) | Surface treated copper foil and mehtod for preparing the same and copper-clad laminate using the same | |
| CN1805653A (en) | Printed circuit board and manufacturing method thereof | |
| CN1606400A (en) | Conductive sheet, product using the same, and manufacturing method thereof | |
| CN87103801A (en) | Durable electrolytic electrode and manufacture method thereof | |
| CN1470078A (en) | ZNO substrate for solar cells, solar cells with the same substrate and manufacturing process of the solar cells | |
| CN1292834A (en) | Electrolytic copper foil having modified shiny side | |
| CN1315591A (en) | Forming method of plating chrome on copper layer of printed circuit board | |
| CN1213645C (en) | Surface treated copper foil and method for preparing the same and copper-cload laminate using the same | |
| CN2400802Y (en) | Multi-layer electrode plate for computer controlled fault scanner | |
| TW574437B (en) | Electrodeposition device and electrodeposition system for coating structures which have already been made conductive | |
| CN1146848A (en) | Copper foil and high-density multi-layered printed circuit board using the copper foil for inner layer circuit | |
| CN1151370C (en) | Multi-layer electrode plate for CT scanner and its preparing process | |
| CN104694977A (en) | High-conductivity carbon fiber electrode material and preparation method | |
| CN100335679C (en) | Electroless plating method | |
| CN1860254A (en) | Corrosion-resistant aluminum conductive material and process for producing the same | |
| CN1364114A (en) | Metal foil with carrier foil and method for manufacturing same | |
| CN1551711A (en) | Copper foil for printed-wiring board | |
| CN105798544B (en) | A kind of tungsten-carbon/carbon-copper composite material and preparation method thereof | |
| JPH0647755A (en) | Production of copper clad laminated sheet |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |