CN2390261Y - Non-volatile memory module with software password - Google Patents

Non-volatile memory module with software password Download PDF

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Publication number
CN2390261Y
CN2390261Y CN 99217378 CN99217378U CN2390261Y CN 2390261 Y CN2390261 Y CN 2390261Y CN 99217378 CN99217378 CN 99217378 CN 99217378 U CN99217378 U CN 99217378U CN 2390261 Y CN2390261 Y CN 2390261Y
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CN
China
Prior art keywords
module
electric source
generator
software
monitoring circuit
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Expired - Fee Related
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CN 99217378
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Chinese (zh)
Inventor
屈斌
杨莉
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Hongkong Sci & Tech Co ltd Beijing City
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Hongkong Sci & Tech Co ltd Beijing City
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Priority to CN 99217378 priority Critical patent/CN2390261Y/en
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Publication of CN2390261Y publication Critical patent/CN2390261Y/en
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Expired - Fee Related legal-status Critical Current

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Abstract

The utility model relates to a non-volatile memory module with a software password, which comprises a static random accessing memory (SRAM), a lithium cell circuit, a power supply monitoring circuit and a software password generator. First and second input ends of the software password generator are reading and writing inputting ends of the module and the outputting end is connected with the writing inputting end of the SRAM. First and second inputting ends of the power supply monitoring circuit are respectively connected with an outer power supply and a plate selecting end of the module, and the outputting end is connected with the plate selecting end of the SRAM. When the outer power supply is lower than a threshold, the plate selection and written signals of the SRAM are set into a high electric level. The function of software password protection prevents data from being rewritten.

Description

The non-volatile memory modules of band software passwords
The utility model relates to a kind of storer, relates to a kind of nonvolatile memory or rather.
Existing nonvolatile memory (NVRAM) comprises static RAM SRAM, electric source monitoring circuit and lithium battery circuit, by electric source monitoring circuit the data among the static RAM SRAM is carried out hardware protection.As model is the electric source monitoring circuit of HK164, is to be that the μ p Power Supply Monitoring integrated chip of EM9745 and 3-8 code translator integrated chip that model is HC138 connect and compose by model, and its connecting circuit as shown in Figure 1.The VCC termination lithium battery of HC138, the non-end of CS are the outer plate choosing ends of electric source monitoring circuit, and the non-end of CSN is the internal sheets choosing end of electric source monitoring circuit, connect the sheet choosing end of static RAM SRAM, 6 pin of the monitor signal output termination HC138 of EM9745.When the VCC of EM9745 terminal voltage during more than or equal to threshold values, the current potential of the non-end of internal sheets choosing end CSN is followed the potential change of the non-end of sheet choosing end CS of electric source monitoring circuit, and promptly the non-end of CS also be low for the low then non-end of CSN, the non-end of CS be height then the non-end of CSN also be height.But when the VCC of EM9745 terminal voltage during less than threshold values; 6 pin of EM9745 are changed to electronegative potential; this moment, no matter outer plate was selected the non-end of CS is that noble potential still is electronegative potential; internal sheets selects the non-end of CSN always to be noble potential; make and to choose inner static RAM SRAM, thereby the data among the protection static RAM SRAM are not are not read and write.
In actual applications; there is defective in above-mentioned hardware protection scheme; promptly when the upper and lower apace electricity of power supply VCC; in case electric source monitoring circuit HK164 can not react; then its internal sheets is selected the non-end of CSN will follow outer plate to select the electronegative potential of the non-end of CS and be varied to electronegative potential; if the non-end of external write signal WR this moment is low, then the content of internal SRAM will be rewritten.
The purpose of this utility model is a kind of non-volatile memory modules with software passwords of design, by the design software defencive function, even external power source stops this module for power supply, can guarantee that also the data among the SRAM are perfectly safe in the module.
The purpose of this utility model is achieved in that a kind of non-volatile memory modules with software passwords, comprises static RAM, lithium battery circuit and electric source monitoring circuit, it is characterized in that: also include the software passwords generator; The internal electric source end of the working power termination module of software passwords generator, electric source monitoring circuit, static RAM, internal electric source end connect described lithium battery circuit; The first input end of software passwords generator is the input end of reading of module, and second input end of software passwords generator is the input end of writing of module, and the output terminal of software passwords generator connects the input end of writing of described static RAM; The first input end connection module external power source end of described electric source monitoring circuit, the sheet choosing end of the second input end connection module of electric source monitoring circuit, the output terminal of electric source monitoring circuit connect the sheet choosing end of described static RAM.
The product type of described software passwords generator is HK168, includes chip microprocessor and the gate-array circuit that is connected with chip microprocessor.
Described lithium battery route lithium battery, diode, resistance R 1 and resistance R 2 connect and compose; Diode cathode connects the external power source end of described module, and diode cathode connects resistance R 1 one ends, and resistance R 1 other end is the internal electric source end of module and connects resistance R 2 one ends, resistance R 2 another termination lithium batteries.
The non-volatile memory modules of band software passwords of the present utility model; it is nonvolatile memory with software passwords defencive function; during use; the reading and writing of module, chip selection signal end all are connected with outside central processing unit CPU; when externally CPU sends specific read password; open the software passwords generator, and the write signal state of static RAM is subjected to the control of software passwords generator in the module.When external power source is lower than threshold values, electric source monitoring circuit is set to high level with the inside chip selection signal of static RAM automatically, and the write signal of static RAM is changed to high level by the software passwords generator, thereby guarantees that the data in the static RAM can not rewritten in the module.The non-volatile memory modules of the utility model band software passwords is compared with aforesaid nonvolatile memory, when the generation external power source is lower than the situation of threshold values, except the internal sheets choosing end set that makes static RAM, also make the inside write signal end set of static RAM, thereby can guarantee that data are perfectly safe in the module.
Further specify technology of the present utility model below in conjunction with embodiment and accompanying drawing
Fig. 1 is a kind of enforcement circuit diagram of existing nonvolatile memory
Fig. 2 is the enforcement circuit diagram of the non-volatile memory modules of the utility model band software passwords
Address before Fig. 1 illustrates, repeat no more.
Referring to Fig. 2, the enforcement circuit of the non-volatile memory modules 200 of the utility model band software passwords, comprise static RAM SRAM (model can be 68512), model is the electric source monitoring circuit of HK164, model is the software passwords generator of HK168 and the lithium battery circuit that is connected and composed by 3V lithium battery BAT, diode D, resistance R 1, R2.
Each end except that 22,24,29,32 of module 200 all is connected with the jack per line end of its interior static RAM SRAM among the figure, comprise (not shown)s such as address signal end and data-signal end, and be connected with the central processing unit CPU of outside.22,24,29,32 ends of module 200 are respectively the non-end of sheet choosing end CS, the non-end of read signal end RD, the non-end of write signal end WR and the external power source VCC ends of module 200, and the non-end of sheet choosing end CS wherein, the non-end of read signal end RD, the non-end of write signal end WR connect outside central processing unit CPU.
The internal electric source end VCCD of the working power termination module of software passwords generator, electric source monitoring circuit, static RAM, internal electric source end VCCD also connects the lithium battery circuit.The first input end IN1 of software passwords generator HK168 be module read to import the non-end of RD, the second input end IN of software passwords generator HK168 is that writing of module imported the non-end of WR, and the output terminal OUT of software passwords generator HK168 connects writing of static RAM SRAM and imports the non-end of WRN.The first input end IN1 connection module external power source end VCC of electric source monitoring circuit HK164, the outer plate of the second input end IN2 connection module of electric source monitoring circuit HK164 is selected the non-end of CS, and the output terminal OUT of electric source monitoring circuit HK164 connects the internal sheets of static RAM SRAM and selects the non-end of CSN.
When the external power source normal power-up, VCC gives lithium battery BAT charging through diode D, resistance R 1, R2, and holds to static RAM SRAM, electric source monitoring circuit HK164, software passwords generator HK168 by VCCD after diode D, resistance R 1 step-down and power up.If this moment outer plate to select the non-end of CS be low level, the non-end of inside chip selection signal CSN of static RAM SRAM is put low by electric source monitoring circuit HK164, choose static RAM SRAM; Simultaneously, when externally CPU sends a specific read command earlier, to open software passwords generator HK168 by the IN1 end, when outer CPU sends write order again and makes the non-end of write signal WR be low level, to hold, the inside non-end of write signal WRN of static RAM SRAM be put low by IN2, just can carry out normal data writing operation static RAM SRAM by software passwords generator HK168.
When the unexpected power down of external power source VCC (or powering on), each integrated chip of module 200 inside is powered by inner lithium battery BAT, does not lose to guarantee the data among the SRAM.At this moment, as long as operate outside power supply VCC is lower than 4.5V, electric source monitoring circuit HK164 promptly is set to high level with the inside non-end of chip selection signal CSN of SRAM automatically, and no matter the non-end of outside chip selection signal CS is high level or low level; Simultaneously; therefore the outer CPU the time can not send specific read command; therefore; no matter the non-end of external write signal WR is low level or high level; the non-end of write signal end WRN of internal SRAM all is changed to high level by software passwords generator HK168; thereby the data in the internal SRAM can not rewritten, reach the purpose of protection internal data.
Software passwords generator HK168 is connected and composed by two gate-array circuits such as GAL20V8 and chip microprocessor such as DS320.The external read of module, write signal and address signal etc. all input end all insert gate-array circuit, and the reading of chip microprocessor, write signal and address, data-signal also inserts gate-array circuit, read external address termly and read by chip microprocessor, write signal, when reading special default address (as 88H), can be under software control when two all after dates are read the non-end of external write signal WR again and are low level, chip microprocessor sends the write signal order, making the non-end of inner write signal WRN is low level, and at other in any case, write signal WRN non-end in this inside is high level.
Non-volatile memory modules of the present utility model; by electric source monitoring circuit is set for static RAM the software passwords generator is set particularly; make static RAM possess hardware and software passwords defencive function simultaneously, guaranteed that the data in the internal storage can be perfectly safe.

Claims (3)

1. the non-volatile memory modules with software passwords comprises static RAM, lithium battery circuit and electric source monitoring circuit, it is characterized in that: also include the software passwords generator; The internal electric source end of the working power termination module of software passwords generator, electric source monitoring circuit, static RAM, internal electric source end connect described lithium battery circuit; The first input end of software passwords generator is the input end of reading of module, and second input end of software passwords generator is the input end of writing of module, and the output terminal of software passwords generator connects the input end of writing of described static RAM; The first input end connection module external power source end of described electric source monitoring circuit, the sheet choosing end of the second input end connection module of electric source monitoring circuit, the output terminal of electric source monitoring circuit connect the sheet choosing end of described static RAM.
2. the non-volatile memory modules of band software passwords according to claim 1 is characterized in that: the product type of described software passwords generator is HK168, includes chip microprocessor and the gate-array circuit that is connected with chip microprocessor.
3. the non-volatile memory modules of band software passwords according to claim 1 is characterized in that: described lithium battery route lithium battery, diode, resistance R 1 and resistance R 2 connect and compose; Diode cathode connects the external power source end of described module, and diode cathode connects resistance R 1 one ends, and resistance R 1 other end is the internal electric source end of module and connects resistance R 2 one ends, resistance R 2 another termination lithium batteries.
CN 99217378 1999-08-02 1999-08-02 Non-volatile memory module with software password Expired - Fee Related CN2390261Y (en)

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Application Number Priority Date Filing Date Title
CN 99217378 CN2390261Y (en) 1999-08-02 1999-08-02 Non-volatile memory module with software password

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CN 99217378 CN2390261Y (en) 1999-08-02 1999-08-02 Non-volatile memory module with software password

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105759679A (en) * 2015-12-12 2016-07-13 重庆川仪自动化股份有限公司 Power-failure protection controller and power-failure protection method thereof
CN106845290A (en) * 2017-01-25 2017-06-13 天津大学 For the SRAM controller and its interface circuit of safe storage chip
CN109493894A (en) * 2018-11-06 2019-03-19 惠科股份有限公司 Protection circuit of memory cell in display panel, display panel and display device
US11322187B2 (en) 2018-11-06 2022-05-03 HKC Corporation Limited Protection circuit for memory in display panel and display panel

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105759679A (en) * 2015-12-12 2016-07-13 重庆川仪自动化股份有限公司 Power-failure protection controller and power-failure protection method thereof
CN105759679B (en) * 2015-12-12 2019-07-23 重庆川仪自动化股份有限公司 Power down protection controller and its power-down retaining method
CN106845290A (en) * 2017-01-25 2017-06-13 天津大学 For the SRAM controller and its interface circuit of safe storage chip
CN106845290B (en) * 2017-01-25 2020-06-05 天津大学 SRAM controller for secure memory chip and interface circuit thereof
CN109493894A (en) * 2018-11-06 2019-03-19 惠科股份有限公司 Protection circuit of memory cell in display panel, display panel and display device
US11322187B2 (en) 2018-11-06 2022-05-03 HKC Corporation Limited Protection circuit for memory in display panel and display panel

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