CN204496928U - A kind of memory data power down holding device - Google Patents
A kind of memory data power down holding device Download PDFInfo
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- CN204496928U CN204496928U CN201520080084.4U CN201520080084U CN204496928U CN 204496928 U CN204496928 U CN 204496928U CN 201520080084 U CN201520080084 U CN 201520080084U CN 204496928 U CN204496928 U CN 204496928U
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- nonvolatile memory
- power down
- memory
- holding device
- switch circuit
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- 230000005611 electricity Effects 0.000 claims abstract description 7
- 238000013500 data storage Methods 0.000 claims abstract description 5
- 239000003990 capacitor Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910018095 Ni-MH Inorganic materials 0.000 description 1
- 229910018477 Ni—MH Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
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Abstract
The utility model embodiment provides a kind of memory data power down holding device, comprising: nonvolatile memory, primary power, backup battery, active-standby switch circuit, wherein: nonvolatile memory, for carrying out data storage; Primary power, is electrically connected, for powering when described nonvolatile memory normally works by described active-standby switch circuit with described nonvolatile memory; Backup battery, be electrically connected by described active-standby switch circuit with described nonvolatile memory, for when described nonvolatile memory normally works, electricity storage is carried out by described active-standby switch circuit, and when described primary power power down, be that described nonvolatile memory is powered by described active-standby switch circuit, need the data stored to write described nonvolatile memory power down.The utility model can realize the storage of power failure data under the supply of standby power supply, and device can only adopt conventional diode, electric capacity, and circuit connecting relation is simple, cost is low.
Description
Technical field
The power down that the utility model relates to a kind of data keeps technical field, specifically, relates to a kind of memory data power down holding device.
Background technology
The nonvolatile semiconductor memory that traditional data backup mainly adopts, nonvolatile memory can't lose stored data when power down.But the nonvolatile memory of all main flows all stems from ROM (, Read-OnlyMemory, ROM (read-only memory)) technology.All storeies gone out by ROM technical research then all have the feature of written information difficulty, as EPROM (Erasable Programmable Read Only Memory, erasable programmable read-only register, almost abrogate at present), EEPROM (Electrically Erasable Programmable Read-Only Memory, band EEPROM (Electrically Erasable Programmable Read Only Memo)) and Flash (flash memory).Not only writing speed is slow for these storeies simultaneously, and erasable number of times is limited, and during write, power consumption is large.
Consider the read-write number of times that nonvolatile memory is limited, General System is all support storer when power down by backup battery to complete power failure data storage, generally all increases the simple measure such as button cell in control device inside in the system not too high to power consumption requirements.Comparatively speaking, button cell or select not rechargeable type, but like this life-span shorter; Select charge type lithium ion or Ni-MH battery, but the designing requirement of this kind of battery to charge-discharge circuit is higher.
Utility model content
The utility model embodiment provides a kind of memory data power down holding device, to overcome the deficiency of the limited read-write number of times of existing main flow nonvolatile memory and backup battery designing requirement harshness, thus realizes power failure data backup.
In order to reach above-mentioned technical purpose, the utility model embodiment provides a kind of memory data power down holding device, and described memory data power down holding device comprises: nonvolatile memory, primary power, backup battery, active-standby switch circuit, wherein:
Described nonvolatile memory, for carrying out data storage;
Described primary power, is electrically connected, for powering when described nonvolatile memory normally works by described active-standby switch circuit with described nonvolatile memory;
Backup battery, be electrically connected by described active-standby switch circuit with described nonvolatile memory, for when described nonvolatile memory normally works, electricity storage is carried out by described active-standby switch circuit, and when described primary power power down, be that described nonvolatile memory is powered by described active-standby switch circuit, need the data stored to write described nonvolatile memory power down.
Technique scheme has following beneficial effect: the storage that can realize power failure data under the supply of standby power supply, device can only adopt conventional diode, electric capacity, and circuit connecting relation is simple, cost is low.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of memory data power down of the utility model embodiment holding device structural representation.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be clearly and completely described the technical scheme in the utility model embodiment, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
As shown in Figure 1, be a kind of memory data power down of the utility model embodiment holding device structural representation, described memory data power down holding device comprises: nonvolatile memory 11, primary power 12, backup battery 13, active-standby switch circuit 14, wherein:
Described nonvolatile memory 11, for carrying out data storage;
Described primary power 12, is electrically connected by described active-standby switch circuit 14 with described nonvolatile memory 11, for powering when described nonvolatile memory 11 normally works;
Backup battery 13, be electrically connected by described active-standby switch circuit 14 with described nonvolatile memory 11, for when described nonvolatile memory 11 normally works, electricity storage is carried out by described active-standby switch circuit 14, and when described primary power 12 power down, powered for described nonvolatile memory 11 by described active-standby switch circuit 14, need the data stored to write described nonvolatile memory 11 power down.
Preferably, described memory data power down holding device also comprises: serial bus interface 15, for connecting described nonvolatile memory 11 and micro-control unit MCU.
Preferably, described serial bus interface 15 is serial peripheral equipment interface SPI type bus.
Preferably, described active-standby switch circuit 14 comprises:
First diode 141, for connecting described backup battery 13 and described nonvolatile memory 11, when described primary power 12 power down, powered for described nonvolatile memory 11 by described first diode 141, need the data stored to write described nonvolatile memory 11 power down;
Second diode 142 and current-limiting resistance 143, wherein, described second diode 142 connects described primary power 12, and described current-limiting resistance 143 connects described backup battery 13; During normal work, described primary power 12 passes through the second diode 142 to described nonvolatile memory 11 normal power supply, and is charged to described backup battery 13 by the second diode 142 and current-limiting resistance 143, to carry out electricity storage.
Preferably, described first diode 141 and described second diode 142 are schottky diode.
Preferably, described nonvolatile memory 11 is ferroelectric memory.
Preferably, described backup battery 13 is super capacitor.
The technical scheme that the utility model adopts is: after system normally powers on, primary power both ensured system worked well by main secondary power switching circuit, ensured that again back-up source (super capacitor namely in implement device) charges normal, realize electricity and stored.In system primary power power down process, supply voltage value is by supply voltage supervision IC (integrated circuit, integrated circuit) gather, once drop into setting thresholding, be switched to standby power supply by active-standby switch circuit immediately, under the supply of standby power supply, ensure that power down needs the data stored reliably to write in non-volatile ROM by serial communication mode by MCU.Supply voltage supervision IC only needs outer meeting resistance to form hysteresis comparator, reduces the measuring error that primary power disturbance brings.Active-standby switch circuit is made up of current-limiting resistance and schottky diode, and this device of non-volatile ROM uses ferroelectric memory.
Primary power monitoring IC is responsible for gathering main power voltage value, compared with setting threshold value by Power Supply Monitoring IC internal circuit, when lower than the Transistor-Transistor Logic level signal producing a standard during power down threshold value, this signal is very easy to be identified as the I/O signal of main flow MCU, and MCU triggers power failure data writing events by various ways (as: interruption) afterwards.
Active-standby switch inside circuit forms primarily of diode and current-limiting resistance, and primary power duration of work provides power supply needed for system worked well by diode, charges through current-limiting resistance to standby power supply (super capacitor) simultaneously.After primary power power down, diode cuts off other current supply circuit of standby power supply, only provides the power supply needed for work to ferroelectric memory fast through diode, guarantees that power failure data reliably can write storer.Storer and main flow MCU use serial communication, and this device serial bus interface type is SPI.
Compared with prior art, the utility model circuit design is simple, completely by hardware automatic switchover standby usage power supply, reduces the requirement to PCB (Printed Circuit Board, printed circuit board) space while reducing device cost.
Various illustrative logical block described in the utility model embodiment, or unit can pass through general processor, digital signal processor, special IC (ASIC), field programmable gate array or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or the design of above-mentioned any combination realizes or operates described function.General processor can be microprocessor, and alternatively, this general processor also can be any traditional processor, controller, microcontroller or state machine.Processor also can be realized by the combination of calculation element, such as digital signal processor and microprocessor, multi-microprocessor, and a Digital Signal Processor Core combined by one or more microprocessor, or other similar configuration any realizes.
Above-described embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; be understood that; the foregoing is only embodiment of the present utility model; and be not used in restriction protection domain of the present utility model; all within spirit of the present utility model and principle, any amendment made, equivalent replacement, improvement etc., all should be included within protection domain of the present utility model.
Claims (7)
1. a memory data power down holding device, is characterized in that, described memory data power down holding device comprises: nonvolatile memory, primary power, backup battery, active-standby switch circuit, wherein:
Described nonvolatile memory, for carrying out data storage;
Described primary power, is electrically connected, for powering when described nonvolatile memory normally works by described active-standby switch circuit with described nonvolatile memory;
Backup battery, be electrically connected by described active-standby switch circuit with described nonvolatile memory, for when described nonvolatile memory normally works, electricity storage is carried out by described active-standby switch circuit, and when described primary power power down, be that described nonvolatile memory is powered by described active-standby switch circuit, need the data stored to write described nonvolatile memory power down.
2. memory data power down holding device as claimed in claim 1, it is characterized in that, described memory data power down holding device also comprises:
Serial bus interface, for connecting described nonvolatile memory and micro-control unit MCU.
3. memory data power down holding device as claimed in claim 2, is characterized in that,
Described serial bus interface is serial peripheral equipment interface SPI type bus.
4. memory data power down holding device as claimed in claim 1, it is characterized in that, described active-standby switch circuit comprises:
First diode, for connecting described backup battery and described nonvolatile memory, when described primary power power down, is that described nonvolatile memory is powered by described first diode, needs the data stored to write described nonvolatile memory power down;
Second diode and current-limiting resistance, wherein, described second diode connects described primary power, and described current-limiting resistance connects described backup battery; During normal work, described primary power by nonvolatile memory normal power supply described in the second diode pair, and is charged to described backup battery by the second diode and current-limiting resistance, to carry out electricity storage.
5. memory data power down holding device as claimed in claim 4, is characterized in that,
Described first diode and described second diode are schottky diode.
6. memory data power down holding device as claimed in claim 1, is characterized in that,
Described nonvolatile memory is ferroelectric memory.
7. memory data power down holding device as claimed in claim 1, is characterized in that,
Described backup battery is super capacitor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520080084.4U CN204496928U (en) | 2015-02-04 | 2015-02-04 | A kind of memory data power down holding device |
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| CN201520080084.4U CN204496928U (en) | 2015-02-04 | 2015-02-04 | A kind of memory data power down holding device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106847318A (en) * | 2017-01-24 | 2017-06-13 | 上海麦歌恩微电子股份有限公司 | Nonvolatile memory based on electric capacity |
| CN107397421A (en) * | 2016-05-18 | 2017-11-28 | 佛山市顺德区美的电热电器制造有限公司 | Cooking appliance and its startup control method |
| CN109388221A (en) * | 2018-10-09 | 2019-02-26 | 郑州云海信息技术有限公司 | A kind of storage system and its standby fulgurite reason method, apparatus and equipment |
| CN109725696A (en) * | 2017-10-27 | 2019-05-07 | 伊姆西Ip控股有限责任公司 | Storage processor and storage system |
| CN113452131A (en) * | 2020-03-25 | 2021-09-28 | 上海铼钠克数控科技股份有限公司 | Power supply management device and method of numerical control equipment |
-
2015
- 2015-02-04 CN CN201520080084.4U patent/CN204496928U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107397421A (en) * | 2016-05-18 | 2017-11-28 | 佛山市顺德区美的电热电器制造有限公司 | Cooking appliance and its startup control method |
| CN106847318A (en) * | 2017-01-24 | 2017-06-13 | 上海麦歌恩微电子股份有限公司 | Nonvolatile memory based on electric capacity |
| CN106847318B (en) * | 2017-01-24 | 2019-02-05 | 上海麦歌恩微电子股份有限公司 | Nonvolatile memory based on capacitor |
| CN109725696A (en) * | 2017-10-27 | 2019-05-07 | 伊姆西Ip控股有限责任公司 | Storage processor and storage system |
| CN109388221A (en) * | 2018-10-09 | 2019-02-26 | 郑州云海信息技术有限公司 | A kind of storage system and its standby fulgurite reason method, apparatus and equipment |
| CN113452131A (en) * | 2020-03-25 | 2021-09-28 | 上海铼钠克数控科技股份有限公司 | Power supply management device and method of numerical control equipment |
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Effective date of registration: 20160524 Address after: 100176, No. 1, building 2, No. 5 middle Sheng Road, Beijing economic and Technological Development Zone, 1510-1515 Patentee after: Beijing Helishi Intelligent Technology Co Ltd Address before: 100176, room 1, building 2, No. 1904 middle Sheng Road, Tongzhou District economic and Technological Development Zone, Beijing, China Patentee before: Apparatus control Technology Co., Ltd. of Beijing Hollysys |
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Effective date of registration: 20181122 Address after: Room 210-668, 2nd floor, 003 Chuangyuan Road, 750, Ningbo High-tech Zone, Zhejiang Province, 315000 Co-patentee after: Beijing Helishi Intelligent Technology Co Ltd Patentee after: Ningbo and Lishi Intelligent Technology Co., Ltd. Address before: 100176 Beijing Economic and Technological Development Zone, No. 1 Building, No. 2 Dishengzhong Road, Floor 5, 510-1515 Patentee before: Beijing Helishi Intelligent Technology Co Ltd |
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Effective date of registration: 20210413 Address after: 100176 Floor 5 510-1515, No. 1 Building, No. 2 Courtyard, Dishengzhong Road, Daxing District Economic and Technological Development Zone, Beijing Patentee after: BEIJING HOLLYSYS AUTOMATION & DRIVE Co.,Ltd. Address before: Room 210-668, 2nd floor, 003 Chuangyuan Road, 750, Ningbo High-tech Zone, Zhejiang Province, 315000 Patentee before: NINGBO HELISHI INTELLIGENT TECHNOLOGY Co.,Ltd. Patentee before: BEIJING HOLLYSYS AUTOMATION & DRIVE Co.,Ltd. |