CN2348493Y - Reaction box of large area sedimentation amorphous silicon - Google Patents
Reaction box of large area sedimentation amorphous silicon Download PDFInfo
- Publication number
- CN2348493Y CN2348493Y CN 98217220 CN98217220U CN2348493Y CN 2348493 Y CN2348493 Y CN 2348493Y CN 98217220 CN98217220 CN 98217220 CN 98217220 U CN98217220 U CN 98217220U CN 2348493 Y CN2348493 Y CN 2348493Y
- Authority
- CN
- China
- Prior art keywords
- stainless steel
- reaction box
- wireway
- gas
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The utility model relates to a reaction box of large area sedimentation amorphous silicon. The utility model is composed of an upper stainless steel gas outlet for reaction gas, a lower stainless steel gas outlet for reaction gas, a door panel of the stainless steel reaction box, an aluminium electrode board in the center of the reaction box, and blocking boards at the both ends of the stainless steel reaction box. The gas guiding structure of the upper and the lower stainless steel gas outlets for reaction gas is a square through tube whose cross section is in a shape like the Chinese character 'lv'. Gas stream holes in m rows and n lines are drilled on a partition board in the middle of the square through tube, and a diameter of the gas stream hole is d. The both sides of a U-shaped groove at the lower part of the upper stainless steel gas outlet (1) for reaction gas are respectively provided with a row of gas stream holes whose diameters are b, and an interval of the gas stream holes is a. A gas inlet and outlet of the gas outlets is at the position of the through hole tube above the stainless steel gas outlets for reaction gas in the shape like the Chinese character 'lv'.
Description
The utility model relates to the amorphous silicon deposition equipment unit of non-crystal silicon solar cell, particularly a kind of reaction box of large tracts of land deposition of amorphous silicon.
The amorphous silicon deposition stove of the large area amorphous silicon solar cell of known domestic industryization, the amorphous silicon that the reaction box of its large tracts of land deposition of amorphous silicon deposits, one of its subject matter is, the inhomogeneities of the thickness of amorphous silicon layer, reason goes out, the inhomogeneities that the reacting gas air-flow distributes in the reaction box of domestic industry large tracts of land deposition of amorphous silicon.
The purpose of this utility model is to provide a kind of reaction box of large tracts of land deposition of amorphous silicon, can obviously improve the uniformity that the air-flow of reacting gas in the amorphous silicon deposition space distributes in the reaction box, thereby improve the uniformity of the amorphous silicon layer thickness that deposits, improve the quality of the large area amorphous silicon layer of suitability for industrialized production.
The purpose of this utility model realizes in the following manner:
The reaction box of a kind of large tracts of land deposition of amorphous silicon of the utility model, by wireway (1) on the stainless steel reaction gas, stainless steel reaction box door-plate (2), reaction box center aluminum electrode plate (3), stainless steel reaction gas downtake (4), stainless steel reaction box two ends closure plate (7) constitutes.The stainless steel material of reacting gas wireway (1) is chosen as 0Cr18Ni9Ti or 0Cr18Ni11Ti on the described reaction box stainless steel, the wireway wall thickness is 1～2mm, last wireway cross section is Lu's font square tube, promptly one dividing plate is arranged in the centre of stainless steel square through hole, former square tube hole is divided into two square tube holes up and down, on dividing plate, be shaped on the airflow hole that a m row n row diameter is d (m wherein, n is the positive integer greater than 1), wireway on stainless steel reaction gas (1) bottom has one to fall " U " type groove, make wireway can frame on reaction box center aluminum electrode plate (3), there is polytetrafluoroethylene " U " type groove wireway on stainless steel reaction gas (1) bottom in " U " type groove, be enclosed within on the reaction box center aluminum electrode plate (3), making between wireway on the stainless steel reaction gas (1) and the reaction box center aluminum electrode plate (3) has the polytetrafluoroethylene groove to be separated by, guarantee wireway (1) and reaction box center aluminum electrode plate (3) electric insulation on the stainless steel reaction gas, the both sides of wireway on stainless steel reaction gas (1) bottom " U " type groove, it is the airflow hole of b for a diameter apart that one row is respectively arranged, the position of the air inlet/outlet of last wireway top through-hole pipe of wireway on " Lu " font stainless steel reaction gas, design like this, make in a vacuum, reacting gas is at first entered in the top through hole of wireway on the stainless steel reaction gas by air inlet, then, on the process, airflow hole decompression on the dividing plate between the through hole of below, enter the below through-hole pipe after all pressing, bottom two each airflow hole of row through last wireway flow between interior two crystallizing fields of reaction box equably again, reach the purpose that the air-flow of reacting gas is evenly distributed in the amorphous silicon deposition space in reaction box; Perhaps, reacting gas in the amorphous silicon deposition space in reaction box, each airflow hole through " U " groove both sides flows in the below through hole of wireway on the stainless steel reaction gas equably, then, enter the top through hole after airflow hole on the dividing plate between process upper and lower through hole is all pressed, extract reaction box out through air inlet/outlet again; Described reaction box center aluminum electrode plate (3) is made by aluminum, be the length of the about 1cm of the thickness rectangle aluminium sheet identical with last downtake length, positive pole for the radio-frequency power supply of amorphous silicon deposition reaction box, in the centre position of the wireway air inlet side of aluminium sheet, the anodal input electrode bar of a radio-frequency power supply is arranged; The structure of wireway is identical on the air guide square tube hole that described stainless steel reaction gas downtake (4) is inner and the structure of airflow hole and the stainless steel reaction gas, its upper bottom portion has " U " groove, one " U " type polytetrafluoroethylene groove is arranged in the groove, be enclosed within the lower bottom part of reaction box center aluminum electrode plate, make stainless steel reaction gas downtake (4) and reaction box center aluminum electrode plate (3) guarantee electric insulation, the lower bottom part of stainless steel reaction gas downtake (4) is equipped with wheel shaft, and the reacting gas of stainless steel reaction gas downtake (4) advances, wireway (1) is identical on the principle that goes out downtake and effect and the stainless steel reaction gas.Described stainless steel reaction box door-plate (2) is made by stainless steel material 0Cr18Ni9Ti or 0Cr18Ni11Ti, thickness of slab is 1～2mm, the length of door-plate is identical with the length of reaction box, the height of door-plate adds that with the center aluminium sheet height of wireway is identical, stainless steel reaction box door-plate (2) has two, the both sides of standing on the center aluminium sheet respectively are affixed on the upper and lower wireway, respectively with the spacing of center aluminium sheet at a distance of 25～30mm, and insulate mutually with the center aluminium sheet, the cross sectional representation of stainless steel reaction box door-plate (2) and longitudinal section schematic diagram are shown in figure six and figure seven.Described stainless steel reaction box two ends closure plate (7) is made by stainless steel 0Cr18Ni9Ti or 0Cr18Ni11Ti material, be that two height are identical with the reaction box height, the rectangle bulkhead that width is identical with the reaction box width, two amorphous silicon deposition reaction compartments are blocked, and stainless steel reaction box two ends closure plate (7) and center aluminum electrode plate are guaranteed electric insulation by the polytetrafluoroethylene lath.The negative pole of the upper and lower reacting gas wireway of stainless steel and two stainless steel reaction box door-plates and two stainless steel reaction box two ends closure plate formation reaction boxes.So far, the reaction box of promptly having formed a kind of large tracts of land deposition of amorphous silicon, a glass substrate for the treatment of deposition of amorphous silicon respectively reclines in the both sides of the center of reaction box aluminum electrode plate, the glass substrate for the treatment of deposition of amorphous silicon that respectively reclines in the inboard of two stainless steel reaction box door-plates (2) of reaction box, promptly reaction box once can be placed four and treat that the glass substrate of deposition of amorphous silicon carries out the operation of deposition of amorphous silicon.
The process of the reaction box deposition of amorphous silicon of a kind of large tracts of land deposition of amorphous silicon of the utility model, be in reaction box, to install four glass substrate to be deposited, and be heated to 200 ℃ of temperature, in the environment of high vacuum, in 200 ℃ weighing apparatus temperature environment, in reaction box, feed the required reacting gas of deposition of amorphous silicon, on the aluminum electrode plate of reaction box center, feed the radio-frequency power supply of 13.56MHz, the plate earthing of reaction box stainless steel door operates to get final product deposition of amorphous silicon by the technology of deposition of amorphous silicon.
The advantage of the reaction box of a kind of large tracts of land deposition of amorphous silicon of the utility model is, the design of downtake in the employing " Lu " font square through-pipe, the reacting gas that makes the turnover wireway is under the effect in dividing plate overdraught hole, the effect that is reduced pressure, all presses, the air-flow of the reacting gas of amorphous silicon deposition reaction compartment in the turnover reaction box is evenly distributed, can effectively improve the uniformity of the thickness of deposition of amorphous silicon, thereby improve the quality of amorphous silicon deposition.
Further describe the utility model below in conjunction with accompanying drawing and with reference to specific embodiment.
Figure one is the cross sectional representation of the reaction box combining structure of a kind of large tracts of land deposition of amorphous silicon of the utility model.Wherein, wireway on the 1-stainless steel reaction gas, 2-stainless steel reaction box door-plate, 3-reaction box center aluminum electrode plate, 4-stainless steel reaction gas downtake
Figure two is the longitudinal cross-section schematic diagram of the reaction box combining structure of a kind of large tracts of land deposition of amorphous silicon of the utility model.Wherein, 5-stainless steel reaction gas wireway air inlet/outlet, 6-reaction box aluminium central electrode plate radio frequency input bar, 7-stainless steel reaction box two ends closure plate, 8-reacting gas airflow hole.
Figure three is the cross sectional representation of wireway on the stainless steel reaction gas of reaction box of a kind of large tracts of land deposition of amorphous silicon of the utility model.
Figure four is the longitudinal cross-section schematic diagram of wireway on the stainless steel reaction gas of reaction box of a kind of large tracts of land deposition of amorphous silicon of the utility model.
Figure five is the longitudinal cross-section schematic diagram of center aluminum electrode plate of the reaction box of a kind of large tracts of land deposition of amorphous silicon of the utility model.
Figure six is the cross sectional representation of stainless steel reaction box door-plate of the reaction box of a kind of large tracts of land deposition of amorphous silicon of the utility model.
Figure seven is the longitudinal cross-section schematic diagram of stainless steel reaction box door-plate of the reaction box of a kind of large tracts of land deposition of amorphous silicon of the utility model.
Embodiment:
With reference to accompanying drawing one or figure two, wireway adopts the 0Cr18Ni9Ti stainless steel material on a kind of stainless steel reaction gas of reaction box of large tracts of land deposition of amorphous silicon, wall thickness 1.5mm's, dimensions is the stainless steel square siphunculus of 1095 * 50 * 50mm, with reference to figure three and figure four, in this square through-pipe, add a dividing plate, this square tube is divided into two square through-pipes up and down, dividing plate upper edge center line is vertically with mutual spacing 30mm, boring a row diameter is the airflow hole of 1.5mm, in the wireway bottom surface, respectively be on the line of 10mm apart from two long limits, spacing with mutual spacing 30mm, boring two row diameters is the airflow hole of 1.5mm, and weld standing screw with material, and the position of the air inlet/outlet of wireway top through-hole pipe of wireway on " Lu " font stainless steel reaction gas, bottom " U " type groove height is 10mm, width is 20mm, promptly makes wireway on the stainless steel reaction gas of present embodiment; With reference to figure five, reaction box center aluminum electrode plate adopts aluminium sheet to make, and specification is the aluminum electrode plate of 1085 * 385 * 10mm, and the copper electrode screw rod of Φ 6mm is housed at the center of an end of plate; Article two, the wall thickness of polytetrafluoroethylene " U " type groove is 5mm, length 1095mm, width 20mm, the length 345mm of height two polytetrafluoroethylene of 15mm " U " type termination retaining groove, width 20mm, height 15mm; Material, the dimensions of stainless steel reaction gas downtake are identical with last wireway, are welded with six load-carrying wheels simultaneously in its bottom and get final product; Stainless steel reaction box two ends closure plate material is the 0Cr18Ni9Ti stainless steel, and specification is 500 * 60 * 6mm, and is drilled with downtake fixing hole and center aluminium sheet electrode hole; With reference to figure six and figure seven, the material 0Cr18Ni9Ti stainless steel of stainless steel reaction box door-plate, thickness of slab is 1.5mm, be of a size of 1095 * 430mm, wherein the height of crimp is 30mm on the door-plate, and the height of following crimp is 15mm, end crimp width 20mm, and the spacing of two stainless steel reaction box door-plates and reaction box center aluminum electrode plate respectively is 22mm, and insulate mutually with the center aluminium sheet; So far, can be with wireway on the stainless steel reaction gas, stainless steel reaction box door-plate, reaction box center aluminum electrode plate, stainless steel reaction gas downtake, stainless steel reaction box two ends closure plate are assembled into the reaction box of a large tracts of land deposition of amorphous silicon, guarantee reaction box center aluminum electrode plate and the reliable electric insulation of all stainless steel materials; It is 1～3mm that this reaction box can install four thickness, is of a size of the glass substrate for the treatment of deposition of amorphous silicon of 350 * 1060mm, operates getting final product deposition of amorphous silicon according to the operational procedure of large tracts of land deposition of amorphous silicon.
Claims (3)
1, the heavy reaction box that moves amorphous silicon of a kind of large tracts of land, by wireway (1) on the stainless steel reaction gas, stainless steel reaction box door-plate (2), reaction box center aluminum electrode plate (3), stainless steel reaction gas downtake (4), stainless steel reaction box two ends closure plate (7) constitutes, it is characterized in that: the stainless steel material of reacting gas wireway (1) is chosen as 0Cr18Ni9Ti or 0Cr18Ni11Ti on the described reaction box stainless steel, the wireway wall thickness is 1～2mm, last wireway cross section is " Lu " font square through-pipe, promptly one dividing plate is arranged in the centre of stainless steel square through hole, former side's through-hole pipe is divided into two square through-hole pipes up and down, on dividing plate, be shaped on the airflow hole that a m row n row diameter is d (m wherein, n is the positive integer greater than 1), wireway on stainless steel reaction gas (1) bottom has one to fall " U " type groove, make wireway can frame on reaction box center aluminum electrode plate (3), there is polytetrafluoroethylene " U " type groove wireway on stainless steel reaction gas (1) bottom in " U " type groove, be enclosed within on the reaction box center aluminum electrode plate (3), making between wireway on the stainless steel reaction gas (1) and the reaction box center aluminum electrode plate (3) has the polytetrafluoroethylene groove to be separated by, guarantee wireway (1) and reaction box center aluminum electrode plate (3) electric insulation on the stainless steel reaction gas, the both sides of wireway on stainless steel reaction gas (1) bottom " U " type groove, one row is respectively arranged apart for a diameter is the airflow hole of b, the position of the air inlet/outlet of last wireway top through-hole pipe of wireway on " Lu " font stainless steel reaction gas; Described reaction box center aluminum electrode plate (3) is made by aluminum, be the length of the about 1cm of the thickness rectangle aluminium sheet identical with last downtake length, positive pole for the radio-frequency power supply of amorphous silicon deposition reaction box, in the centre position of the wireway air inlet side of aluminium sheet, the anodal input electrode bar of a radio-frequency power supply is arranged; The structure of wireway is identical on the air guide square tube hole that described stainless steel reaction gas downtake (4) is inner and the structure of airflow hole and the stainless steel reaction gas, its upper bottom portion has " U " groove, one " U " type polytetrafluoroethylene groove is arranged in the groove, be enclosed within the lower bottom part of reaction box center aluminum electrode plate, make stainless steel reaction gas downtake (4) and reaction box center aluminum electrode plate (3) guarantee electric insulation, the lower bottom part of stainless steel reaction gas downtake (4) is equipped with wheel shaft; Described stainless steel reaction box door-plate (2) is made by stainless steel material 0Cr18Ni9Ti or 0Cr18Ni11Ti, thickness of slab is 1～2mm, the length of door-plate is identical with the length of reaction box, the height of door-plate adds that with the center aluminium sheet height of wireway is identical, stainless steel reaction box door-plate (2) has two, the both sides of standing on the center aluminium sheet respectively are affixed on, on the downtake, respectively with the spacing of center aluminium sheet at a distance of 25～30mm, and insulate mutually with the center aluminium sheet, described stainless steel reaction box two ends closure plate (7) is made by stainless steel 0Cr18Ni9Ti or 0Cr18Ni11Ti material, be that two height are identical with the reaction box height, the rectangle bulkhead that width is identical with the reaction box width
2, the reaction box of a kind of deposition of amorphous silicon as claimed in claim 1, it is characterized in that: the gas-guiding structure of reacting gas wireway (1) is " Lu " font square through-pipe for its cross section on the described reaction box stainless steel, promptly one dividing plate is arranged in the centre of stainless steel square siphunculus, former side's through-hole pipe is divided into two square through-hole pipes up and down, on dividing plate, bore and be shaped on the airflow hole that a m row n row diameter is d (m wherein, n is the positive integer greater than 1), the both sides of wireway on stainless steel reaction gas (1) bottom " U " type groove, one row is respectively arranged apart for a diameter is the airflow hole of b, the position of the air inlet/outlet of last wireway top through-hole pipe of wireway on " Lu " font stainless steel reaction gas.
3, the reaction box of a kind of deposition of amorphous silicon as claimed in claim 1 or 2 is characterized in that: the gas-guiding structure of reacting gas wireway (1) is identical on the gas-guiding structure of described reaction box stainless steel reaction gas downtake (4) and the stainless steel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98217220 CN2348493Y (en) | 1998-07-19 | 1998-07-19 | Reaction box of large area sedimentation amorphous silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98217220 CN2348493Y (en) | 1998-07-19 | 1998-07-19 | Reaction box of large area sedimentation amorphous silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2348493Y true CN2348493Y (en) | 1999-11-10 |
Family
ID=33969890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 98217220 Expired - Fee Related CN2348493Y (en) | 1998-07-19 | 1998-07-19 | Reaction box of large area sedimentation amorphous silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2348493Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101857953A (en) * | 2010-06-11 | 2010-10-13 | 深圳市创益科技发展有限公司 | Face feed electrode for thin-film solar cell deposition |
| CN109237696A (en) * | 2017-05-16 | 2019-01-18 | 任福奎 | Sleep air decontamination machine |
| CN112038444A (en) * | 2020-08-05 | 2020-12-04 | 英利能源（中国）有限公司 | Manufacturing method of N-type crystalline silicon solar cell and manufacturing method of back passivation contact structure of N-type crystalline silicon solar cell |
-
1998
- 1998-07-19 CN CN 98217220 patent/CN2348493Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101857953A (en) * | 2010-06-11 | 2010-10-13 | 深圳市创益科技发展有限公司 | Face feed electrode for thin-film solar cell deposition |
| CN109237696A (en) * | 2017-05-16 | 2019-01-18 | 任福奎 | Sleep air decontamination machine |
| CN112038444A (en) * | 2020-08-05 | 2020-12-04 | 英利能源（中国）有限公司 | Manufacturing method of N-type crystalline silicon solar cell and manufacturing method of back passivation contact structure of N-type crystalline silicon solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101880868B (en) | Deposition box for silicon-based film solar cells | |
| CN2348493Y (en) | Reaction box of large area sedimentation amorphous silicon | |
| CN103469203B (en) | Base material, its continuous production line and the method for coated two-dimentional atomic crystal | |
| CN101622375A (en) | Pecvd process chamber backing plate reinforcement | |
| CN103103493B (en) | Production device of graphene copper wire | |
| CN101835339B (en) | Panel electrode radio-frequency capacitance coupling argon-oxygen/argon-nitrogen plasma generator under constant pressure | |
| CN104870696A (en) | Device for vertical galvanic metal, preferably copper, deposition on a substrate and a container suitable for receiving such a device | |
| CN101979721A (en) | Silicon core rods and silicon core structure for growth of polycrystalline silicon | |
| CN101857953A (en) | Face feed electrode for thin-film solar cell deposition | |
| CN103276373A (en) | PECVD device | |
| CN210350397U (en) | Inside be convenient for high-voltage board of dehumidification | |
| CN217026061U (en) | Process air supply distribution system for magnetron sputtering | |
| CN201549276U (en) | Paint coating device for flat copper wire | |
| CN202705463U (en) | Device special for amorphous silicon film uniform deposition of solar cell panel | |
| CN215592944U (en) | Glass fiber strand impregnating compound coating device | |
| CN114672768A (en) | Thin film deposition apparatus | |
| CN112095061A (en) | Production switching production channel and switching method for two different steel plate products | |
| CN104451601A (en) | Atmospheric-pressure chemical vapor deposition coating reactor | |
| CN203284466U (en) | PECVD device | |
| CN207154783U (en) | A kind of tungsten powder reduction apparatus | |
| CN202090054U (en) | Novel large-area deposition amorphous silicon reaction box | |
| CN206996918U (en) | A kind of hollow aluminum strip spray painting guiding sliding assisting apparatus | |
| CN211451725U (en) | Become high-efficient drying device for paper tinsel production and processing | |
| CN215279203U (en) | Lower intensive cooler for plate strip steel control cooling system | |
| CN216366631U (en) | High-efficient equipment that volatilizees |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C53 | Correction of patent for invention or patent application | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: PATENTEE ADDRESS; FROM: SHENZHEN CITY, GUANGDONG PROVINCE TO: ROOM #, TIANJIANGSHANGCHANGDIANNAO, SHENNANZHONG ROAD, SHENZHEN CITY |
|
| CP03 | Change of name, title or address |
Address after: Shenzhen Shennan Road, Rainbow Department store computer room Meng Qingjie Patentee after: Zhou Qingming Address before: Shenzhen city of Guangdong Province Patentee before: Zhou Qingming |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |