CN202705463U - Device special for amorphous silicon film uniform deposition of solar cell panel - Google Patents
Device special for amorphous silicon film uniform deposition of solar cell panel Download PDFInfo
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- CN202705463U CN202705463U CN 201220180337 CN201220180337U CN202705463U CN 202705463 U CN202705463 U CN 202705463U CN 201220180337 CN201220180337 CN 201220180337 CN 201220180337 U CN201220180337 U CN 201220180337U CN 202705463 U CN202705463 U CN 202705463U
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Abstract
The utility model discloses a device special for amorphous silicon film uniform deposition of a solar cell panel. The device comprises a stainless steel upper through pipe, a stainless steel lower through pipe, a central aluminum plate electrode, two aluminum door leaves and two plug plates. The cross section of the stainless steel upper through pipe comprises an upper layer space, a middle layer space and a lower layer space. The cross section of the stainless steel lower through pipe comprises an upper layer space and a lower layer space. One end of the central aluminum plate electrode is provided with a copper electrode rod. The aluminum door leaves are installed on two sides of the device. The two plug plates are respectively installed at two ends of the device. The positions between the upper through pipe and a solar cell placing area in the device and between the lower through pipe and the solar cell placing area in the device are respectively provided with a metal plate, and the thickness of each metal plate is the same as that of solar cells in the device. The device can significantly improve uniformity of air current distribution of reaction gases in the device in amorphous silicon deposition space, thereby achieving effects of improving solar energy conversion efficiency.
Description
Technical field
The utility model relates to a kind of non-crystal silicon solar cell depositing device parts, particularly a kind of solar panel apparatus for amorphous silicon film even deposition.
Background technology
Along with reaching its maturity of non-crystal silicon solar energy hull cell production technology, the solar product of various non-crystalline silicons spreads all over the world.Wherein, the technique of plasma enhanced chemical vapor deposition method (PECVD) production non-crystal silicon solar energy hull cell is widely used.The plasma enhanced chemical vapor deposition technology is to make by means of glow discharge plasma to contain the gaseous substance generation chemical reaction that film forms, thereby realizes a kind of new technology of preparing of thin-film material growth.The patent No. is: ZL201120073512.2, name is called " a kind of reaction box of New Type Large Area deposition of amorphous silicon ", be exactly a kind of equipment of plasma enhanced chemical vapor deposition technology, but the non-crystal silicon solar energy hull cell that adopts this equipment to produce, because during deposition of amorphous silicon, the air-flow skewness of reactant gases causes the amorphous silicon layer thickness that deposits even not, has affected to a certain extent the efficiency of conversion of solar cell.
Summary of the invention
In order to overcome defects, the utility model provides a kind of solar panel apparatus for amorphous silicon film even deposition that the reactant gases air-flow is evenly distributed can make deposition of amorphous silicon the time.
The utility model for the technical scheme that solves its technical problem and adopt is:
A kind of solar panel apparatus for amorphous silicon film even deposition comprises:
Square through-pipe on one stainless steel, described upper square through-pipe cross section is upper, middle and lower three sheaf spaces;
Square through-pipe under one stainless steel, described lower square through-pipe cross section goes to upper and lower two sheaf spaces;
One center aluminum electrode plate, an end of described center aluminum electrode plate is equipped with a copper battery lead rod;
Two aluminium matter door-plates, described aluminium matter door-plate is installed on the device both sides;
Two bulkheads, described bulkhead is installed on respectively the device two ends;
Be equipped with a metal sheet between the interior cell piece put area to be processed of the inner of described upper square through-pipe and lower square through-pipe and device, described metal sheet is fixedly connected on the aluminium matter door-plate, the thickness of described metal sheet and the interior cell piece consistency of thickness of device.
As further improvement of the utility model, the gap between described metal sheet and the cell piece to be processed is less than 1 millimeter.
As further improvement of the utility model, the inner end edge of described upper square through-pipe and lower square through-pipe fits in the edge of described metal sheet respectively.
As further improvement of the utility model, some airflow holes have been drilled on the interlayer on the described stainless steel in the middle of the square through-pipe.
As further improvement of the utility model, an end of square through-pipe is provided with inlet mouth on the described stainless steel, and described inlet mouth connects the upper sheaf space of described upper square through-pipe.
As further improvement of the utility model, the bottom of square through-pipe is provided with " U " shape groove of stainless steel on the described stainless steel, and stainless steel has respectively drilled an exhaust discharge orifice in " U " shape groove both sides.
As further improvement of the utility model, some airflow holes have been drilled on the interlayer under the described stainless steel in the middle of the square through-pipe.
As further improvement of the utility model, an end of square through-pipe has the air outlet under the described stainless steel, and described air outlet connects the lower layer space of described lower square through-pipe.
As further improvement of the utility model, the top of square through-pipe also is provided with stainless steel " U " shape groove under the described stainless steel, and described stainless steel " U " shape groove both sides have respectively drilled an exhaust discharge orifice.
As further improvement of the utility model, the square through-pipe bottom is equipped with wheel shaft under the described stainless steel, and the load-carrying wheel is installed on the described wheel shaft; The both sides of described lower square through-pipe are equipped with hinge.
As further improvement of the utility model, cover has the tetrafluoroethylene edge strip that is " U " shape groove around the aluminum electrode plate of described center.
The utility model is when reaction, the needed reactant gases of deposition of amorphous silicon flows to the upper sheaf space of upper square through-pipe from the inlet mouth that installs upper square through-pipe, then decompression is all pressed through the airflow hole on the first layer dividing plate of upper square through-pipe, flow into the space, middle layer, again all press through the airflow hole on the second layer dividing plate again, flow into lower layer space, by two exhaust discharge orifices of upper square through-pipe bottom, difference is two reaction compartments of inflow device equably again.After all pressures of gas through three sheaf spaces, can obviously improve the air pressure homogeneity at two exhaust discharge orifice places, upper square through-pipe bottom, the air-flow that flows into reaction compartment can reach very mild effect.Need to benly be, have larger gap between upper and lower siphunculus of the prior art and the cell piece to be processed, so that air-flow is when just flowing to reaction compartment, the gap is so that a part of air flow line produces skew, cause through the air-flow on cell piece surface inhomogeneous and unstable, cause the amorphous silicon membrane after deposition is finished in uneven thickness, and then affect the electrical property of cell piece.In the utility model, the metal sheet that in upper and lower siphunculus and device, adds between the cell piece put area, be used for packing space, guaranteed stability and the homogeneity of air-flow, the deposition non-uniform phenomenon of having avoided air-flow to cause owing to free air space varies in size.In the isoperibol of high vacuum, under the effect of radio frequency, reactant gases reacts in two reaction compartments.The complete gas of unreacted enters the upper sheaf space of lower square through-pipe from the top two evacuation circuit orifice flows of lower square through-pipe, and the airflow hole from the intermediate interlayer of lower square through-pipe flows into lower layer space again, and then the air outlet from lower square through-pipe is pumped.In the reaction process, reactant gases flows in the reaction compartment from the upper square through-pipe of device equably, gas density in reaction compartment is even, and the thickness of the amorphous silicon film that is deposited is also just more even, thereby has improved the various electrical properties of non-crystal silicon solar energy hull cell.
The beneficial effects of the utility model are:
Combine with the amorphous silicon deposition technique of technology maturation, the utility model provides a kind of solar panel apparatus for amorphous silicon film even deposition, described device can obviously improve the homogeneity that the air-flow of reactant gases in the amorphous silicon deposition space distributes in the reaction unit, compare existing apparatus, the homogeneity of amorphous silicon film was better improved after this device deposition was finished, effectively improved the homogeneity of amorphous silicon film and the electrical property of non-crystal silicon solar energy hull cell, and then reached and improve it to the effect of solar energy converting efficient.
Description of drawings
The view in transverse section of the solar panel apparatus for amorphous silicon film even deposition that Fig. 1 provides for the utility model.
The longitdinal cross-section diagram of the solar panel apparatus for amorphous silicon film even deposition that Fig. 2 provides for the utility model.
The view in transverse section of the upper square through-pipe of the solar panel apparatus for amorphous silicon film even deposition that Fig. 3 provides for the utility model.
The view in transverse section of the lower square through-pipe of the solar panel apparatus for amorphous silicon film even deposition that Fig. 4 provides for the utility model.
The longitdinal cross-section diagram of the center aluminum electrode plate of the solar panel apparatus for amorphous silicon film even deposition that Fig. 5 provides for the utility model.
Embodiment
In order to deepen understanding of the present utility model, the utility model is described in further detail below in conjunction with embodiment and accompanying drawing, and specific embodiment described herein only is used for explaining the utility model, does not consist of the restriction to the utility model protection domain.
A kind of solar panel apparatus for amorphous silicon film even deposition shown in seeing figures.1.and.2, it comprises:
Square through-pipe 2 on one stainless steel, and described upper square through-pipe 2 cross sections are upper, middle and lower three sheaf spaces; Some airflow holes 9 have been drilled on the interlayer on the described stainless steel in the middle of the square through-pipe 2.An end of square through-pipe 2 is provided with inlet mouth 15 on the described stainless steel, and described inlet mouth 15 connects the upper sheaf space of described upper square through-pipe 2.The bottom of square through-pipe 2 is provided with stainless steel on the described stainless steel " U " shape groove 7, stainless steel has respectively drilled an exhaust discharge orifice 9 in " U " shape groove 7 both sides.
Square through-pipe 3 under one stainless steel, and described lower square through-pipe 3 cross sections go to upper and lower two sheaf spaces; Some airflow holes 9 have been drilled on the interlayer under the described stainless steel in the middle of the square through-pipe 3.An end of square through-pipe 3 has air outlet 16 under the described stainless steel, and described air outlet 16 connects the lower layer space of described lower square through-pipe 3.The top of square through-pipe 3 also is provided with stainless steel under the described stainless steel " U " shape groove 7, described stainless steel " U " shape groove 7 both sides have respectively drilled an exhaust discharge orifice 9, and square through-pipe 3 bottoms are equipped with wheel shaft 14 under the described stainless steel, and load-carrying wheel 13 is installed on the described wheel shaft; The both sides of described lower square through-pipe 3 are equipped with hinge 8.
One center aluminum electrode plate 4, an end of described center aluminum electrode plate 4 are equipped with a copper battery lead rod 10; Cover has the tetrafluoroethylene edge strip 6 that is " U " shape groove around the described center aluminum electrode plate 4.
Two aluminium matter door-plates 5, described aluminium matter door-plate 5 is installed on the device both sides; Be close to square through-pipe 2 and lower square through-pipe 3; Described aluminium matter door-plate 5 is connected with described lower square through-pipe 3 by hinge 8;
Two bulkheads 11, described bulkhead 11 is installed on respectively the device two ends; Be connected with upper square through-pipe 2, lower square through-pipe 3 by bolt, make two large-area deposition spaces of reaction box 1 inner formation;
Be equipped with a metal sheet 12 between interior cell piece 17 put areas to be processed of the inner of described upper square through-pipe 2 and described lower square through-pipe 3 and device, described metal sheet is fixedly connected on the aluminium matter door-plate 5, the thickness of described metal sheet 12 and interior cell piece 17 consistency of thickness of device.The inner end edge of described upper square through-pipe 2 and described lower square through-pipe 3 fits in the edge of described metal sheet 12 respectively.
Gap between described metal sheet 12 and the cell piece to be processed is less than 1 millimeter.
Referring to Fig. 3, drilled some airflow holes on the intermediate interlayer of described upper square through-pipe 2, the airflow hole diameter on the first layer interlayer is d1, and the airflow hole diameter on the second layer interlayer is d2, and two evacuation circuit bore dias of upper square through-pipe bottom are d3.Preferably, we select d1〉d2〉d3, so that air-flow has reasonably decompression, a pressure equalizing.
Referring to Fig. 4, the airflow hole diameter on the intermediate interlayer of described lower square through-pipe 3 is d4, and the diameter of the top two exhaust discharge orifices of lower square through-pipe is d5, usually, we select d4=d3, d5=d2 so that the charge flow rate of reactant gases with go out airshed and reach equilibrium state.
Described metal sheet 12 adopts steel plate, copper coin, aluminium sheet etc. all passable.
Claims (3)
1. solar panel apparatus for amorphous silicon film even deposition comprises:
Square through-pipe on one stainless steel (2), described upper square through-pipe (2) cross section is upper, middle and lower three sheaf spaces;
Square through-pipe under one stainless steel (3), described lower square through-pipe (3) cross section goes to upper and lower two sheaf spaces;
One center aluminum electrode plate (4), an end of described center aluminum electrode plate (4) are equipped with a copper battery lead rod (10);
Two aluminium matter door-plates (5), described aluminium matter door-plate (5) is installed on the device both sides;
Two bulkheads (11), described bulkhead (11) is installed on respectively the device two ends;
It is characterized in that: be equipped with a metal sheet (12) between interior cell piece (17) put area to be processed of the inner of described upper square through-pipe (2) and described lower square through-pipe (3) and device, described metal sheet (12) is fixedly connected on the described aluminium matter door-plate (5), the thickness of described metal sheet (12) and interior cell piece (17) consistency of thickness of device.
2. solar panel apparatus for amorphous silicon film even deposition according to claim 1 is characterized in that: the gap between described metal sheet and the cell piece to be processed is less than 1 millimeter.
3. solar panel apparatus for amorphous silicon film even deposition according to claim 1 and 2, it is characterized in that: the inner end edge of described upper square through-pipe (2) and described lower square through-pipe (3) fits in the edge of described metal sheet respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220180337 CN202705463U (en) | 2012-04-26 | 2012-04-26 | Device special for amorphous silicon film uniform deposition of solar cell panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220180337 CN202705463U (en) | 2012-04-26 | 2012-04-26 | Device special for amorphous silicon film uniform deposition of solar cell panel |
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| CN202705463U true CN202705463U (en) | 2013-01-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201220180337 Expired - Fee Related CN202705463U (en) | 2012-04-26 | 2012-04-26 | Device special for amorphous silicon film uniform deposition of solar cell panel |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102534566B (en) * | 2012-04-26 | 2017-05-31 | 江苏庆丰能源有限公司 | Solar panel apparatus for amorphous silicon film even deposition |
| CN117328040A (en) * | 2023-11-14 | 2024-01-02 | 无锡松煜科技有限公司 | Preparation method of perovskite thin film solar cell |
-
2012
- 2012-04-26 CN CN 201220180337 patent/CN202705463U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102534566B (en) * | 2012-04-26 | 2017-05-31 | 江苏庆丰能源有限公司 | Solar panel apparatus for amorphous silicon film even deposition |
| CN117328040A (en) * | 2023-11-14 | 2024-01-02 | 无锡松煜科技有限公司 | Preparation method of perovskite thin film solar cell |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130130 Termination date: 20150426 |
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| EXPY | Termination of patent right or utility model |