CN2273871Y - Nearness type reducing photoetching exposure table - Google Patents
Nearness type reducing photoetching exposure table Download PDFInfo
- Publication number
- CN2273871Y CN2273871Y CN 95242587 CN95242587U CN2273871Y CN 2273871 Y CN2273871 Y CN 2273871Y CN 95242587 CN95242587 CN 95242587 CN 95242587 U CN95242587 U CN 95242587U CN 2273871 Y CN2273871 Y CN 2273871Y
- Authority
- CN
- China
- Prior art keywords
- proximity
- nearness
- dwindle
- exposure
- slack adjuster
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The utility model provides a nearness type reducing photoetching exposure table, which carries out reducing exposure under the condition of nearness type photoetching technology. The utility model is characterized in that a piece supporting table is fixed on a movable driving frame; a large-stroke control mechanism with continuous micro displacement is used for moving the driving frame to cause the gap between a mask face and the surface of a silicon piece to carry out arbitrary large-range regulation (0-1.2 mm) according to the near-field diffraction characteristics of light in order to cause the reducing photoetching under the condition of nearness type photoetching technology to be probable. A displacement sensor is also arranged on the piece supporting table, can measure a gap value, and can determine, correct, and regulate the gap value by a computer.
Description
The utility model is that a kind of proximity is dwindled the photolithographic exposure platform, relates to proximity photoetching machine technique field.
Present proximity litho machine, its exposure desk generally are made of mask platform and silicon chip wafer-supporting platform two parts, and the gap g on its mask face and silicon chip resist surface generally is changeless, only are a value between 20～40 μ m usually; Even variable, range of adjustment is not generally 0～0.1mm very much yet; At this moment resist dimension of picture size is essentially the size of corresponding figure on the mask on the silicon chip that obtains, so owing to be subjected to the restriction of the minimum dimension of picture that mask graph can accomplish, the resist figure is not easy to do very for a short time usually yet; So, just need dwindle exposure in order to obtain littler size and the resolution graphics of Geng Gao; What adopt usually is projection lithography, promptly increases a projection objective, difficulty and cost but this can develop skill greatly between mask and silicon chip; And for X-ray lithography, then individual especially technological difficulties.
But, from knowing the near field diffraction pattern The Characteristic Study of light when crack g between mask and the silicon chip is a specific value, the light distribution of mask graph on the resist surface is the diffraction deflated state, and promptly when light intensity during greater than a certain value, its light distribution width is less than corresponding mask graph dimension width.So if can regulating mask and silicon chip in exposure process easily, to hold sheet gap g be this particular value, use specific resist again, just can be without projection objective, promptly use the proximity diffraction to dwindle the resist pattern line that photoetching method obtains dwindling on the proximity litho machine, improve photoetching resolution.
The purpose of this utility model is for fear of above-mentioned the deficiencies in the prior art, providing a kind of can satisfy the proximity of dwindling exposure on the proximity litho machine and dwindle the photolithographic exposure platform, with this exposure desk and each system of original proximity litho machine as: exposure control system, shutter etc. link up, and replace original exposure desk and just can carry out the proximity diffraction and dwindle exposure.
The purpose of this utility model can reach by following measure: a kind of proximity is dwindled the photolithographic exposure platform, by mask holder, wafer-supporting platform is formed, it is characterized in that wafer-supporting platform is fixed on the slack adjuster, bogie is connected with the big continuous micrometric displacement control gear of stroke in slack adjuster, on wafer-supporting platform, settle a displacement transducer, and link by computing machine and displacement transducer and stepper motor.
The purpose of this utility model can also reach by following measure: in slack adjuster, the big continuous micrometric displacement control gear of stroke is to be linked by segmenting screw mandrel and shaft coupling and stepper motor by bogie.
The purpose of this utility model can also reach by following measure: bogie is to be linked by screw thread with the segmentation screw mandrel in the slack adjuster.
The purpose of this utility model can also reach by following measure: be fixed with orienting lug on the bracing frame limit.
The purpose of this utility model can also reach by following measure: can be by piezoelectric micro-displacement actuator as the continuous micrometric displacement control gear of big stroke.
Compared with the prior art the utility model has following advantage:
1, by on original proximity photolithographic exposure platform, increasing (0～1.2mm) gap continuous regulation mechanism on a large scale, can when exposure, regulate gap g on demand arbitrarily, make characteristic dimension figure on the required exposure mask be diffraction and dwindle distribution, to obtain resist figure less than corresponding mask graph size on silicon chip resist surface.Thereby can under the technical conditions of proximity X-ray lithography, dwindle exposure, to reach the purpose that obtains the smaller szie figure and improve photoetching resolution.
2, use of the present utility model can also be because can make things convenient for, big stroke, regulate gap g continuously, and make and be convenient to conditions of exposure and parameter are optimized in exposure.
3, owing to adopt computer close-loop control, make gap adjustment convenient, accurate.
4, simple in structure, easy to operate, cost is low, and is practical, is easy to apply
5, existing product on the market all can directly be bought by displacement transducer and corresponding data acquisition and computer control, connecting circuit system, and it is convenient to make the utility model implement.
Description of drawings:
Fig. 1 is a structural representation of the present utility model
Fig. 2 is the sectional view of photolithographic exposure interstation of the present utility model crack regulating device.
The utility model is described in further detail below in conjunction with accompanying drawing:
This exposure desk comprises that a bogie (4) is connected with silicon chip wafer-supporting platform (2), bogie with the segmentation screw mandrel (9) by being threaded, stepper motor (11) is connected with segmentation screw mandrel (9) by shaft coupling (7), wafer-supporting platform (2) is moved to dwindle the required gap g value of exposure, the g value can be passed through computing machine (14) and set.Segmentation screw mandrel (9) makes it to link to each other by a bearing (10) with bracing frame; Being arranged on orienting lug (5) on the bracing frame (6) can make bogie (4) only move up and down and not have rotation; Stepper motor is fixed on the support (8), and by support (8) whole device is fixed on the proximity litho machine support (12).Gap g value can be measured and proofread and correct to the displacement transducer (3) that is fixed on the silicon chip wafer-supporting platform (2), and send data to computing machine (14), FEEDBACK CONTROL stepper motor (11) amount of spin.The adjustable extent of g is 0～1.2mm, and resolution is 0.001mm.So just can obtain resist figure on silicon chip resist surface less than corresponding mask graph size.This device can be used in proximity ultraviolet light and the X-ray lithography machine.
Also can adopt piezoelectric micro-displacement actuator to replace segmentation screw mandrel (9) and stepper motor (11) to make bogie (4) drive silicon chip wafer-supporting platform (2) moves.
Existing product on the market all can directly be bought by displacement transducer and corresponding data acquisition and computer control, connecting circuit system.Think the EC series microdisplacement measurement control system of dynamo-electric High-tech company etc. as Chengdu Austria.So related content is no longer carefully stated here.
Claims (5)
1. a proximity is dwindled the photolithographic exposure platform, by mask holder (1), wafer-supporting platform (2) is formed, it is characterized in that wafer-supporting platform (2) is fixed on the slack adjuster (13), bogie (4) is connected with the big continuous micrometric displacement control gear of stroke in slack adjuster (13), go up arrangement one displacement transducer (3) at wafer-supporting platform (2), and link by computing machine (14) and displacement transducer (3) and stepper motor (11).
2. dwindle the photolithographic exposure platform according to the described a kind of proximity of claim 1, it is characterized in that the big continuous micrometric displacement control gear of stroke is to be linked with stepper motor by segmentation screw mandrel (9) and shaft coupling (7) by bogie (4) in the slack adjuster.
3. dwindle the photolithographic exposure platform according to the described a kind of proximity of claim 1, it is characterized in that bogie in the slack adjuster (4) and segmentation screw mandrel (9) are to be linked by screw thread.
4. dwindle the photolithographic exposure platform according to the described a kind of proximity of claim 1, it is characterized in that being fixed with orienting lug (5) on bracing frame in the slack adjuster (6) limit.
5. dwindle the photolithographic exposure platform according to the described a kind of proximity of claim 1, it is characterized in that can be by piezoelectric micro-displacement actuator as the continuous micrometric displacement control gear of big stroke.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95242587 CN2273871Y (en) | 1995-12-27 | 1995-12-27 | Nearness type reducing photoetching exposure table |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95242587 CN2273871Y (en) | 1995-12-27 | 1995-12-27 | Nearness type reducing photoetching exposure table |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2273871Y true CN2273871Y (en) | 1998-02-04 |
Family
ID=33883514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 95242587 Expired - Fee Related CN2273871Y (en) | 1995-12-27 | 1995-12-27 | Nearness type reducing photoetching exposure table |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2273871Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100352147C (en) * | 2003-08-04 | 2007-11-28 | 住友重机械工业株式会社 | Reacting force treating system of operation table device |
| CN103792794A (en) * | 2012-11-02 | 2014-05-14 | 上海微电子装备有限公司 | Proximity photoetching machine |
-
1995
- 1995-12-27 CN CN 95242587 patent/CN2273871Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100352147C (en) * | 2003-08-04 | 2007-11-28 | 住友重机械工业株式会社 | Reacting force treating system of operation table device |
| CN103792794A (en) * | 2012-11-02 | 2014-05-14 | 上海微电子装备有限公司 | Proximity photoetching machine |
| CN103792794B (en) * | 2012-11-02 | 2016-02-03 | 上海微电子装备有限公司 | A kind of Proximity stepper |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |